Patents Represented by Attorney, Agent or Law Firm Thomason, Moser & Patterson
  • Patent number: 6056267
    Abstract: A gate valve assembly having a primary and secondary seating surface for preventing process fluids from contacting the seals of the valve is provided. Additionally, a purge gas inlet can be disposed in the valve body to prevent process gases from contacting the seals during operation. Still further, a primary and secondary barrier seal may be provided to prevent process gases from contacting the primary seal. Additionally, a purge gas inlet can be disposed between the primary and secondary seals to further prevent process gases from contacting the primary seal.
    Type: Grant
    Filed: May 19, 1998
    Date of Patent: May 2, 2000
    Assignee: Applied Materials, Inc.
    Inventor: Gerhard Schneider
  • Patent number: 6054380
    Abstract: A method and apparatus for protecting a metal interconnect from corrosion due to contact with a low k dielectric material in a multilevel metallization and interconnect structure. To facilitate such protection, a barrier material, in the form of a sidewall spacer, is deposited between the dielectric material and the metal line.
    Type: Grant
    Filed: December 9, 1997
    Date of Patent: April 25, 2000
    Assignee: Applied Materials, Inc.
    Inventor: Mehul Naik
  • Patent number: 6054379
    Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH.sub.3 SiH.sub.3, and N.sub.2 O.
    Type: Grant
    Filed: February 11, 1998
    Date of Patent: April 25, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Wai-Fan Yau, David Cheung, Shin-Puu Jeng, Kuowei Liu, Yung-Cheng Yu
  • Patent number: 6054862
    Abstract: A method for performing a bakeout test on a vacuum chamber without causing the ion gauge to fail turns the ion gauge off when it is not needed, even during part of the time that the chamber is held at a high vacuum, so as to minimize the opportunity for contaminants to react with and damage the ion gauge filament. Specifically, the method turns the gauge off when any heating elements in the chamber are turned on, so the added heat does not exacerbate the problems with reactions with the filament. Thus, the method turns the gauge off when the chamber is too hot. In one embodiment, the method employs a heating jacket to keep the gauge and its adapter from forming a cold spot at which water vapor can condense during part of the test.
    Type: Grant
    Filed: September 2, 1997
    Date of Patent: April 25, 2000
    Assignee: Applied Materials, Inc.
    Inventor: Jiaxiang Zhou
  • Patent number: 6053756
    Abstract: The present invention generally provides a safety connector apparatus for making an electrical/power connection in an electrical/power system comprising an interlock cover disposed on a connecting end of a power cable, a housing disposed over a power connector, the housing having a cover receiving cavity and a switch adaptable to enable power transfer when the cover is safely and securely locked by the cover lock.
    Type: Grant
    Filed: May 4, 1998
    Date of Patent: April 25, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Allen Flanigan, Vince Burkhart
  • Patent number: 6051845
    Abstract: A method and apparatus that accurately marks a wafer at selected locations to form a wafer coordinate system. The apparatus contains a wafer platen for retaining a wafer in a substantially horizontal orientation, a wafer orientation detector assembly and a marking assembly mounted above the wafer platen. In operation, the apparatus orients the wafer by identifying an orientation attribute of the wafer, then applies fiducial marks to the wafer. The wafer marking apparatus forms a portion of an integrated analytical tool.
    Type: Grant
    Filed: March 25, 1998
    Date of Patent: April 18, 2000
    Assignee: Applied Materials, Inc.
    Inventor: Yuri Uritsky
  • Patent number: 6050550
    Abstract: The invention generally provides an apparatus that aerates the aquatic environment and agitates the bottom of the aquatic environment. One aspect of the invention provides a variable buoyancy aerator which cycles between an agitation mode and an aeration mode. Another aspect of the invention provides a system for maintaining an aqua-culture environment including one or more variable buoyancy aerators, a power source connected to supply power to activate the aerators and a controller connected to the power source to regulate activation of each aerator. The invention also provides a method for maintaining an aqua-culture environment including positioning one or more variable buoyancy aerators within the aqua-culture environment and regulating activation of each aerator to provide aeration, bottom agitation and controlled circulation to the aquatic environment.
    Type: Grant
    Filed: July 9, 1998
    Date of Patent: April 18, 2000
    Inventor: Harry L. Burgess
  • Patent number: 6050891
    Abstract: A turbo-axial fan assembly is provided for a clean-air supply system of a substrate handling module of a vacuum processing system. The turbo-axial fan assembly has one or more turbo-axial fans for generating airflow through the substrate handling environment. The turbo-axial fans have tunable vanes for controlling the speed of the airflow and efficiently using the available power.
    Type: Grant
    Filed: February 6, 1998
    Date of Patent: April 18, 2000
    Assignee: Applied Materials, Inc.
    Inventor: Eric A. Nering
  • Patent number: 6051114
    Abstract: The present invention provides a method and apparatus for preferential PVD conductor fill in an integrated circuit structure. The present invention utilizes a high density plasma for sputter deposition of a conductive layer on a patterned substrate, and a pulsed DC power source capacitively coupled to the substrate to generate an ion current at the surface of the substrate. The ion current prevents sticking of the deposited material to the field areas of the patterned substrate, or etches deposited material from the field areas to eliminate crowning or cusping problems associated with deposition of a conductive material in a trench, hole or via formed on the substrate.
    Type: Grant
    Filed: June 23, 1997
    Date of Patent: April 18, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Tse-Yong Yao, Zheng Xu, Kenny King-tai Ngan, Xing Chen, John Urbahn, Lawrence P. Bourget
  • Patent number: 6050446
    Abstract: A lid assembly for a process chamber. The lid assembly includes a hinge having a hinge mount affixed to the chamber and a hinge arm. A pin extends from the hinge mount through an elongated slot in the hinge arm allowing both rotational and longitudinal motion of the hinge arm relative to the hinge mount. A support frame attached to the hinge arm has two side arms that extend perpendicularly from the hinge arms toward the front of the chamber. The lid is pivotally connected to the side arms by a pivot connection aligned with the center of mass of the lid. A detent extends from the lid through a slot in the side arm at a position offset from the pivot connection. The detent and slot serve to limit the allowable rotation of the lid relative to the lid support frame. Thus, the lid is allowed to float over the opening of the chamber as the lid is closed so that the lid may be positioned in parallel alignment relative to the opening of the chamber before being secured to the chamber.
    Type: Grant
    Filed: July 11, 1997
    Date of Patent: April 18, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Lawrence Lei, Son Trinh, Gwo-Chuan Tzu, Mark Johnson
  • Patent number: 6051122
    Abstract: A readily removable deposition shield assembly for processing chambers such as chemical vapor deposition (CVD), ion implantation, or physical vapor deposition (PVD) or sputtering chambers, is disclosed. The shield assembly includes a shield member which is mounted to the chamber for easy removal, such as by screws, and defines a space along the periphery of the substrate support. A shadow ring is inserted into the peripheral space and is thus mounted in removable fashion and is automatically centered about the substrate by an alignment ring. The alignment ring removably rests upon a flange extending from the outer periphery of an electrostatic chuck. The shadow ring overlaps the cylindrical shield member, the alignment ring and the peripheral edge of a substrate retained by the chuck. Collectively, these components prevent deposition on the chamber and hardware outside the processing region.
    Type: Grant
    Filed: August 21, 1997
    Date of Patent: April 18, 2000
    Assignee: Applied Materials, Inc.
    Inventor: Allen Flanigan
  • Patent number: 6045620
    Abstract: A vacuum processing system has a transfer chamber with a slit valve at which is attached a process chamber and with a slit valve insert disposed in the slit valve for matching up with the process chamber. The slit valve may be made of two pieces, an outer portion that slides into the transfer chamber's slit valve opening from the outside of the transfer chamber, and an inner portion that slides into the outer portion from the inside of the transfer chamber. The portions of the insert permit any process chamber to be attached to any slit valve opening. The outer portion may not be removed from the slit valve opening when a process chamber is attached to the transfer chamber, but the inner portion may be easily removed for servicing regardless of in whether a process chamber is attached.
    Type: Grant
    Filed: July 11, 1997
    Date of Patent: April 4, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Avi Tepman, Robert B. Lowrance
  • Patent number: 6045670
    Abstract: An improved target assembly for a deposition chamber wherein the backing plate which mounts a metal target has a groove for receiving a target shield. The target shield can be replaced during normal cleaning operations without replacement of the remainder of the target assembly. The target shield can be used with targets having tapered edges.
    Type: Grant
    Filed: January 8, 1997
    Date of Patent: April 4, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Bret Adams, Gregory N. Hamilton
  • Patent number: 6043607
    Abstract: A method and apparatus for generating a complex waveform and coupling the waveform to a reaction chamber of a semiconductor wafer processing system using a power amplifier. Specifically, the apparatus includes a complex waveform generator coupled to a high-power amplifier. The high-power amplifier is coupled to one or more frequency selective matching networks which select bands of RF signal to be coupled to plasma excitation circuit within the semiconductor wafer processing system.
    Type: Grant
    Filed: December 16, 1997
    Date of Patent: March 28, 2000
    Assignee: Applied Materials, Inc.
    Inventor: Craig A. Roderick
  • Patent number: 6042706
    Abstract: The present invention generally provides a target structure that allows uniform erosion and efficient utilization of a sputterable material while reducing particle generation caused by backscatter deposition. The target has an annular region comprised of sputterable material and a central region configured to receive direct deposition rather than backscatter deposition. The annular region of the target provides an exposed surface that is generally concave, but is preferably substantially frustoconical. The central region of the target provides an exposed surface having a configuration that is either substantially planar or convex, but is preferably substantially convex frustoconical.
    Type: Grant
    Filed: January 14, 1997
    Date of Patent: March 28, 2000
    Assignee: Applied Materials, Inc.
    Inventor: Jianming Fu
  • Patent number: 6039393
    Abstract: A protective cover (10) is disclosed that can be interchanged among a variety of baby seats. It includes a canopy (11) and a sealing element (22) that can interchangeably and flexibly seal around a variety of baby seats. It may also contain a removable hood (20) that may shield a portion of an insect resistant mesh (15) so that a side mesh (15b) remains open for air and viewing of the occupant under the protective cover (10). Furthermore, the hood (20) may be attached at an approximate midpoint (26) of the canopy (11) to allow versatility in deploying the hood in a rearward direction and fastening the hood with attachment element (38). Likewise, the hood (20) may be folded in a forward direction and attached with attachment element (38) to a forward contour of a baby seat.
    Type: Grant
    Filed: April 15, 1998
    Date of Patent: March 21, 2000
    Inventor: Warren E. Roh
  • Patent number: 6040011
    Abstract: The present invention discloses susceptor used in vacuum CVD chambers which provides a purge gas delivery and removal system that inhibits the deposition of process gas on the edge and back side of a substrate, while providing access to the entire surface of the substrate for processing. The susceptor has a substrate receiving surface having a perimeter. A purge gas such as argon is passed over the perimeter of the surface using a purge gas system having an inlet disposed adjacent to the substrate receiving surface. The purge gas is removed by a pump system having an outlet disposed adjacent to the substrate receiving surface.
    Type: Grant
    Filed: June 24, 1998
    Date of Patent: March 21, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Joseph Yudovsky, Moris Kori
  • Patent number: 6033480
    Abstract: This invention provides a method and apparatus for substantially eliminating deposition on the edge of a wafer supported on a pedestal in a processing chamber. Process gas flow onto the wafer surface is inhibited from reaching the wafer edge and backside, by means of a shadow ring placed over the wafer without touching it. Deposition on the edge and backside of the wafer are therefore substantially eliminated. The shadow ring defines a cavity which circumscribes the wafer edge, into which purge gas is flowed. This purge gas flows out from the cavity through the gap between the shadow ring and the upper surface of the wafer. Alignment pins are placed on the wafer supporting surface of the pedestal. These pins have sloping surfaces and are arranged to guide the wafer to a centered position on the pedestal when the wafer is placed on the pedestal. These pins also serve to align the shadow ring to the pedestal and thence to the wafer.
    Type: Grant
    Filed: October 15, 1996
    Date of Patent: March 7, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Aihua Chen, Karl A. Littau, Dashun S. Zhou
  • Patent number: 6034863
    Abstract: Apparatus for retaining a workpiece in a process chamber of a semiconductor wafer processing system. The apparatus has a thermal transfer element, an electrostatic chuck on top of the thermal transfers element and a clamping ring that secures the chuck to the thermal transfer element in a predefined orientation. The detachable, "keyed" chuck permits rapid exchange of wafer support platforms for increased productivity and consistent placement of same upon the thermal transfer element for reliable processing conditions.
    Type: Grant
    Filed: November 12, 1997
    Date of Patent: March 7, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Dan A. Marohl, Jeffrey A. Brodine, Tony P. Schiavo, Jr.
  • Patent number: 6033478
    Abstract: Apparatus for supporting a workpiece. The apparatus has either a mechanical or electrostatic chuck having a workpiece support surface that specifically directs the flow of a heat transfer gas from at least one gas supply port towards a drain port. A pressure valve beyond the drain port regulates heat transfer gas pressure to ensure adequate gas density for cooling by conduction and adequate gas flow for controlled leakage through the valve.
    Type: Grant
    Filed: November 5, 1996
    Date of Patent: March 7, 2000
    Assignee: Applied Materials, Inc.
    Inventor: Arnold Kholodenko