Abstract: A method and apparatus to prevent charging of a substrate, retained by an electrostatic chuck in a plasma chamber, during ignition of a plasma. The method deactivates a voltage to the chuck electrodes (or other conductive element in a substrate support pedestal) and allows the chuck electrodes to float during ignition of the plasma. The method activates the chuck electrodes again following the ignition of the plasma.

Abstract: A mask for covering a substrate for performing capacitance-voltage measurements on the substrate is a full-faced mask covering substantially all of the substrate. The mask may include a ring with one or more strips across the ring with holes in the strips for target material deposition. In an alternative embodiment, the mask may be a disk with holes at various locations across the disk. In either embodiment, the mask generally conforms to the shape of the substrate, so that the clamp ring of the PVD chamber seats on the mask or on the substrate, so little or none of the plasma or sputtered material can escape between the substrate and clamp ring. Various embodiments of the mask provide different ways to hold the mask on the substrate, such as clamping with clips, gluing with an adhesive, folding extensions of the mask over the edge of the substrate, and holding by surface tension.

Abstract: The present invention generally provides a system for controlling the temperature of multiple components of a semiconductor processing device or fabrication facility. The system includes a common source of a heated or chilled fluid that is distributed to multiple process components for use in heating or cooling. The multiple process components may be part of the same chamber or process, serve different processes in the same or different cluster tool, serve a combination of stand-alone and cluster tools, or any combination of process components located in a common fabrication facility. Each process component includes a flow control valve that controls the temperature of each component.

Abstract: A manifold for use in a chemical vapor deposition reactor, optimized for providing effective deposition on a substrate of a specific diameter. The manifold has upstream and downstream faces and is of substantially circular shape, with a central region of the downstream face being perforated by a plurality of upstream-directed bores. The central region is substantially larger than a circle of the specific wafer diameter for which the reactor is optimized. A centrally located plurality of the bores are through-bores or holes to the upstream face of the manifold that define a gas flow path from an upstream gas source to the wafer.

Abstract: A protective cover (10) is disclosed that can be interchanged among a variety of baby seats. It includes a canopy (11) and a sealing element (22) that can interchangeably and flexibly seal around a variety of baby seats. It may also contain a removable hood (20) that may shield a portion of an insect resistant mesh (15) so that a side mesh (15b) remains open for air and viewing of the occupant under the protective cover (10). Furthermore, the hood (20) may be attached at an approximate midpoint (26) of the canopy (11) to allow versatility in deploying the hood in a rearward direction and fastening the hood with attachment element (38). Likewise, the hood (20) may be folded in a forward direction and attached with attachment element (38) to a forward contour of a baby seat.

Abstract: The present invention is to a chemical vapor deposition process for depositing a substantially planar, highly reflective layer on a substrate, and is particularly useful for filling high aspect ratio holes in the substrate with metal-containing material. The substrate is placed in a process zone, and successive seeding and oriented crystal growth stages are performed on the substrate. In the seeding stage, the substrate is heated to temperatures T.sub.s, within a first lower range of temperatures .DELTA. T.sub.s, and a seeding gas is introduced into the process zone. The seeding gas deposits a substantially continuous, non-granular, and planar seeding layer on the substrate. Thereafter, in an oriented crystal growth stage, the substrate is maintained at deposition temperatures T.sub.d, within a second higher range of temperatures .DELTA. T.sub.D, and deposition gas is introduced into the process zone.

Abstract: A method and apparatus is provided which secures the lid of a processing chamber in abutting engagement with the walls of the chamber to form an airtight processing environment and which provides for the release of pressure within the chamber in the event of a sudden change in pressure such as an over pressure excursion. The method and apparatus generally comprise a clamp member having a base portion for mounting the clamp to a first surface, a contact portion for contacting a second surface and maintaining a desired relationship between the first and second surfaces, and a deflecting portion which allows separation of the first and second surfaces to relieve pressure behind the first or second surface and return to the desired relationship between the first and second surfaces.

Abstract: An improved particle monitoring sensor is described which uses a variety of techniques to prolong the effective life of the optical surfaces within the particle monitoring'sensor. Substantially inert purging gas is directed over the particle monitoring sensor windows, which are normally exposed to a harsh operating environment. The surfaces of these windows are heated by heating elements in direct thermal contact with the windows. In addition, a restrictive slit is placed over the detector window to reduce the exposed area and to increase the velocity of gas flowing over the window surface. While this slit reduces the detector's field of view, the signal loss is reduced by using a linearly polarized light source and aligning the elongated slit's major axis with the direction of polarization.

Abstract: A water collector for directing water from roofing configurations that form an inside valley to the rain gutters is disclosed. The device collects the water without the device collecting debris or becoming clogged with leaves or twigs that may interfere with its function.

Abstract: A DC power supply having a pair of "piggybacked" voltage supplies, where a reference voltage supply provides a reference voltage for a variable voltage supply and each voltage supply is coupled to a current sink. The power supply is capable of sourcing and sinking current through a single output terminal when supplying a positive or negative output voltage with respect to ground.

Abstract: Apparatus, positioned at an inlet port to a pump, for shielding the pump from a process chamber of a semiconductor wafer processing system, where the apparatus has a controllably variable effective throughput area, and method for electrically controlling the size of the effective throughput area. Specifically, the apparatus is a controllable restrictor shield supported by an actuator, having a first effective throughput area and a second effective throughput area, where the first effective throughput area is typically less than the second effective throughput area. The size of the effective throughput area is directly responsive to an electric signal that controls the actuator.

Abstract: A vacuum processing system has a wafer cooling system disposed on a lid of a transfer chamber so that heated wafers are cooled inside the transfer chamber. The wafer cooling system has a wafer lift assembly and a wafer cooler. The wafer cooler has a cooling plate and a coolant tank disposed through the transfer chamber lid. The wafer lift assembly has a lift actuator disposed on the top of the transfer chamber lid, guide rods to translate the lifting motion through the lid, and wafer supports inside the lid to raise the wafer to a position proximate to the cooling plate. The wafer cools by radiating heat up to the cooling plate, and the coolant tank transfers the heat from the cooling plate.

Abstract: The invention provides an apparatus for controlling a temperature of a component of a processing system comprising one or more thermoelectric devices disposed in thermal conduction with the component and a thermal fluid passage disposed in thermal conduction with the thermoelectric device. To regulate the temperature of the component, the thermoelectric device is connected to an electrical power, and a thermally conductive fluid is flowed through the thermal passage. The invention further provides an apparatus for removing particles comprising one or more thermoelectric devices disposed on a gas exhaust line. To remove particles from a processing system, the thermoelectric devices are connected to an electrical power source to create a cold trap within the gas exhaust on which particles condense.

Abstract: The present invention provides for an aquatic environment an aerator having a temperature adjusted air inlet for aerating a quantity of water in a container, where the temperature of air pumped through an aerator may be cooled or heated, the temperature adjusted air entrained with water, and exhausted through an outlet into a bait well or a larger container, such as a pond for raising aquatic livestock. The temperature adjusted air may be supplied from an air conditioning unit in an automobile, a portable or fixed refrigeration unit, or gas flowing through an chilled environment of cooled liquid. In another embodiment, the temperature adjusted air may be drawn through an underground or underwater thermal stabilized conduit, using the natural temperature stability of underlying formations or layers.

Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

Abstract: First liquid pumping apparatus for containing a first quantity of first liquid, second liquid pumping apparatus for containing a second quantity of second liquid and control apparatus for alternately connecting the first liquid pumping apparatus and second liquid pumping apparatus to pressurized liquid utilization apparatus and for causing the first and second liquid pumping apparatus to alternately deliver the respective liquids to the liquid utilization apparatus at a substantially constant flow or substantially constant pressure; the first and second liquids may be the same liquid or different liquids.

Abstract: A diagnostic pedestal assembly for measuring ion current and DC bias voltage within a high-power plasma reaction chamber of a semiconductor wafer processing system. The diagnostic pedestal assembly contains an aperture located in a surface of the pedestal and a probe element that is supported within the aperture.

Abstract: The present invention generally provides a metallization process for forming a highly integrated interconnect. More particularly, the present invention provides a dual damascene interconnect module that incorporates a barrier layer deposited on all exposed surface of a dielectric layer which contains a dual damascene via and wire definition. A conductive metal is deposited on the barrier layer using two or more deposition methods to fill the via and wire definition prior to planarization. The invention provides the advantages of having copper wires with lower resistivity (greater conductivity) and greater electromigration resistance than aluminum, a barrier layer between the copper wire and the surrounding dielectric material, void-free, sub-half micron selective CVD Al via plugs, and a reduced number of process steps to achieve such integration.