Patents Represented by Attorney Toler, Larson & Abel, LLP
  • Patent number: 6850427
    Abstract: A single transistor memory storage element has a transistor contact connected to only one of two bitlines to program a logical value for the respective bit, pulling the connected bitline away from a bitline bias voltage and creating a voltage difference between the two bitlines. A differential sense amplifier may be employed to read the programmed bit value by sensing the magnitude or polarity of the voltage difference across the two bitlines. The read only memory is thus small, suitable for embedded read only memory, but may be read quickly.
    Type: Grant
    Filed: April 14, 2003
    Date of Patent: February 1, 2005
    Assignee: Advanced Micro Devices, Inc.
    Inventor: Blaine Prestwich
  • Patent number: 6844084
    Abstract: A spinel composition of the invention includes a monocrystalline lattice having a formula Mg1-w?wAlx-y?yOz, where w is greater than 0 and less than 1, x is greater than 2 and less than about 8, y is less than x, z is equal to or greater than about 4 and equal to or less than about 13, ? is a divalent cationic element having an ionic radius greater than divalent magnesium, and ? is a trivalent cationic element having an ionic radius greater than trivalent aluminum. The monocrystalline lattice has tetrahedral and octahedral positions, and most of the magnesium and ? occupy tetrahedral positions. In one embodiment, the molar ratio of aluminum to the amount of magnesium, ? and ? can be controlled during growth of the monocrystalline lattice thereby forming a spinel substrate suitable for heteroepitaxial growth of III-V materials. A method of the invention, includes forming a monocrystalline lattice of a spinel composition.
    Type: Grant
    Filed: April 3, 2002
    Date of Patent: January 18, 2005
    Assignee: Saint-Gobain Ceramics & Plastics, Inc.
    Inventors: Milan R. Kokta, Hung T. Ong
  • Patent number: 6839713
    Abstract: The functionality of various process control and data collection system embodiments may be improved by employing the database methodology disclosed herein during the requirements-analysis phase for data collection and process control in a semiconductor manufacturing environment. The relational database storage technology as disclosed herein consists of a set of interconnected tables, where each table has a field or an amalgamation of fields (primary key) that uniquely identifies each record (tuple) in the table. In addition, the method as disclosed herein utilizes foreign keys, which represent the value of a primary key for a related table.
    Type: Grant
    Filed: July 12, 2001
    Date of Patent: January 4, 2005
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Yurong Shi, Richard Bruce Patty, Russell Clinton Brown
  • Patent number: 6839362
    Abstract: A saturable absorber Q-switch includes a monocrystalline lattice having the formula Mg1-xCoxAlyOz where x is greater than 0 and less than 1, y is greater than 2 and less than about 8, and z is between about 4 and 13. The lattice has tetrahedral and octahedral positions, and most of the magnesium and cobalt occupy tetrahedral positions. In one embodiment, the molar ratio of aluminum to the combined amount of magnesium and cobalt in the monocrystalline lattice can be controlled during growth of the monocrystalline lattice to thereby form a saturable absorber Q-switch that exhibits a 4T1 spectrum for the cobalt ion of at least about 1544 ?m.
    Type: Grant
    Filed: May 22, 2001
    Date of Patent: January 4, 2005
    Assignee: Saint-Gobain Ceramics & Plastics, Inc.
    Inventors: Milan R. Kokta, Dennis L. Peressini, Jeffrey A. Cooke, Kevin L. Goodnight
  • Patent number: 6839011
    Abstract: An improved method of filtering that can be used with an analog-to-digital converter (ADC) is disclosed herein. Multiple discrete-time-feedback-modules (114, 116) each with current limiting (202, 204 and 222, 224) are used to sample information which is supplied to an integrator (112) for conversion to digital form. By overlapping the integration of these samples, and by evaluating these integration results multiple times (TP2, TP3, TP4) per sample (TP1), using the methods disclosed herein the advantages of increased accuracy, lower power consumption and reduced cost may be realized.
    Type: Grant
    Filed: March 31, 2003
    Date of Patent: January 4, 2005
    Assignee: Freescale Semiconductor, Inc.
    Inventor: Merit Hong
  • Patent number: 6833764
    Abstract: A PLL frequency synthesizer tunable in small step sizes that comprises: 1) a first PLL circuit comprising: i) a first feedforward frequency divider that receives an F(in) frequency and generates an F1 frequency, where F1=F(in)/P, ii) a first PLL core that receives the F1 frequency and generates an F2 frequency, where F2=(P+&Dgr;p)F1, and iii) a first feedback frequency divider that receives the F2 frequency and generates a first feedback signal having frequency F2/(P+&Dgr;p); and 2) a second PLL circuit comprising: i) a second feedforward frequency divider that receives the F2 frequency and generates an F3 frequency, where F3=F2/(N+&Dgr;n), ii) a second PLL core that receives the F3 frequency and generates an F(out) frequency, where F(out)=(N)F3, and iii) a second feedback frequency divider that receives the F(out) frequency and generates a second feedback signal having frequency F(out)/(N).
    Type: Grant
    Filed: December 16, 2002
    Date of Patent: December 21, 2004
    Assignee: Advanced Micro Devices, Inc.
    Inventor: Gregory L. Dean
  • Patent number: 6833620
    Abstract: An input output ring for a semiconductor device is disclosed that uses power buffers having widths that vary from the widths of the input and output buffers. In one embodiment, the pitches between bond pads are the same, in another embodiment the pitches between the bond pads can vary. In another embodiment, the number of bond pads is greater than the number of associated active buffer areas. By connecting two power bond pads to a common buffer the inductance associated with the buffer is reduced, thereby reducing the number of active buffers needed to be dedicated to providing power to the semiconductor device.
    Type: Grant
    Filed: November 28, 2000
    Date of Patent: December 21, 2004
    Assignee: ATI Technologies, Inc.
    Inventors: Peter L. Rosefield, Harvest W. C. Chung
  • Patent number: 6833761
    Abstract: A power amplifier device having a conductive structure overlying a dielectric layer. The conductive structure has a first conductive structure portion that is substantially electrically isolated from a second conductive structure portion. A first plurality of bond wires couple the first conductive structure portion to an amplifying device, while a second plurality of bond wires couple the second conductive structure portion to the amplifying device.
    Type: Grant
    Filed: February 28, 2003
    Date of Patent: December 21, 2004
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Joseph Staudinger, Monte Gene Miller
  • Patent number: 6830641
    Abstract: Seal devices of this invention are prepared by the process of depositing a polymer material onto a metallic substrate to form a composite construction, and shape forming the composite construction into the shape of a seal device. The so-formed seal device comprises a casing member that is formed from the metallic substrate, and a sealing element disposed along a surface of the casing member that is formed from the polymer material for placement against a sealing surface. Seal devices of this invention can be shaped formed into a variety of different types of seals, e.g., lips seals, L-shaped seals, and U-cup seals, which may or may not be energized. Seal devices prepared according to this invention using such preformed composite construction enable seal formation by a single step of shape forming, without having to both make and form individual seal members, and subsequently combine or join the separately formed seal members together.
    Type: Grant
    Filed: December 21, 2001
    Date of Patent: December 14, 2004
    Assignee: Saint-Gobain Performance Plastics Corporation
    Inventors: John W. Kosty, Jon M. Lenhert, Michael A. MacIssac
  • Patent number: 6825123
    Abstract: A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.
    Type: Grant
    Filed: April 15, 2003
    Date of Patent: November 30, 2004
    Assignee: Saint-Goban Ceramics & Plastics, Inc.
    Inventors: Andrew G. Haerle, Richard F. Buckley, Richard R. Hengst
  • Patent number: 6825716
    Abstract: A system and apparatus for reducing offset voltages in folding amplifiers is disclosed. In one form, a folding amplifier for use in an analog-to-digital converter is provided. The folding amplifier includes a first current source operable to be coupled to a first differential pair and a second differential pair. The folding amplifier further includes a switching network coupled between the first current source and the first and second differential pairs and operable to enable coupling the first current source to at least one of the first differential pair and the second differential pair.
    Type: Grant
    Filed: April 30, 2002
    Date of Patent: November 30, 2004
    Assignee: Freescale Semiconductor, Inc.
    Inventor: Michael J. McGowan
  • Patent number: 6809593
    Abstract: A power amplifier's base current is biased by a control circuit that produces a linear relationship across varying temperatures and processes. A voltage to current converter controls a voltage follower configured operational amplifier in response to a reference device to drive the voltage and current of the power amplifier. A slope control circuit is coupled to the reference device to limit a maximum power control slope.
    Type: Grant
    Filed: April 28, 2003
    Date of Patent: October 26, 2004
    Assignee: Freescale Semiconductor, Inc.
    Inventors: David A. Newman, Benjamin R. Gilsdorf
  • Patent number: 6804266
    Abstract: In accordance with a specific aspect of the present invention, a compressed video stream, such as an MPEG-2 video stream, is received by a transport demultiplexor, synchronized, parsed into separate packet types, and written to buffer locations external the demultiplexor. Adaptation field is handled by a separate parser. In addition, primary elementary stream data can be handled by separate primary elementary stream parsers based upon the packet identifier of the primary elementary stream. Video packets can be parsed based upon stream identifier values. Specific packets of data are stored in one or more system memory or video memory buffers by an output controller based upon allocation table information. Private data associated with specific elementary streams or packet adaptation fields are repacketized, and written to an output buffer location. In specific implementations, the hardware associated with the system is used to acquire the data stream without any knowledge of the specific protocol of the stream.
    Type: Grant
    Filed: January 24, 2000
    Date of Patent: October 12, 2004
    Assignee: ATI Technologies, Inc.
    Inventors: Branko Kovacevic, Kevork Kechichian
  • Patent number: 6798152
    Abstract: A circuit and method for providing closed loop control using constant current switching techniques is disclosed herein. By controlling the current supplied to high intensity light emitting diodes (LEDs) using the techniques and circuits described, high intensity LEDs can be operated at or near their maximum capacity without danger of overloading the LEDs, and without using excess amounts of current. A circuit as described herein, has multiple high side switches, each of which is connected to an LED array. The LED arrays are in turn connected through an inductor to a current switching control section that switches current to ground, or recirculates the current to maintain LED current flow within a desired range.
    Type: Grant
    Filed: August 21, 2002
    Date of Patent: September 28, 2004
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Alan Michael Rooke, Ibrahim S. Kandah
  • Patent number: 6798289
    Abstract: A voltage-to-current converter having improved third order distortion is disclosed herein for use in an FM radio system, particularly an FM radio system which employs a broadband input filter rather than a narrow band input filter. By cross-coupling a main amplifier with a second amplifier that produces more distortion and has a smaller gm, than the main amplifier, third order frequency peaks resulting from non-linear amplification of undesired signals can be prevented from interfering with a desired signal because the magnitude of the third order frequency peak is reduced.
    Type: Grant
    Filed: May 31, 2002
    Date of Patent: September 28, 2004
    Assignee: Motorola, Inc.
    Inventor: Michael McGinn
  • Patent number: 6794949
    Abstract: A system and method of varying frequency is disclosed. A first oscillator in a phase-locked loop (PLL) maintains a first frequency as part of the PLL lock. A second oscillator having a control coupled to the PLL can be modified to generate a frequency different than that of the PLL. This is accomplished while maintaining lock of the PLL.
    Type: Grant
    Filed: March 28, 2003
    Date of Patent: September 21, 2004
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Gayathri Bhagavatheeswaran, Christopher Chun
  • Patent number: 6794256
    Abstract: A method for asymmetric spacer formation integratable into a manufacturing process for integrated circuit semiconductor devices is presented. The method comprises forming a gate structure over a substrate, and forming a sidewall layer overlying the gate structure and substrate, wherein the sidewall layer comprises a first portion overlying a first sidewall of the gate structure. A photoresist structure is formed adjacent to the first portion, and subjected to an ion beam. The photoresist structure serves to shield at least part of the first portion from the ion beam. During irradiation, the wafer is oriented such that a non-orthogonal tilt angle exists between a path of the ion beam and a surface of the first sidewall. Formation of asymmetric spacers is possible because radiation damage to unshielded sidewall portions permits subsequent etches to proceed at a faster rate.
    Type: Grant
    Filed: August 4, 2003
    Date of Patent: September 21, 2004
    Assignee: Advanced Micro Devices Inc.
    Inventors: Mark B. Fuselier, Edward E. Ehrichs, S. Doug Ray, Chad Weintraub, James F. Buller
  • Patent number: 6785336
    Abstract: In accordance with a specific aspect of the present invention, a compressed video stream, such as an MPEG-2 video stream, is received by a transport demultiplexor, synchronized, parsed into separate packet types, and written to buffer locations external the demultiplexor. Adaptation field is handled by a separate parser. In addition, primary elementary stream data can be handled by separate primary elementary stream parsers based upon the packet identifier of the primary elementary stream. Video packets can be parsed based upon stream identifier values. Specific packets of data are stored in one or more system memory or video memory buffers by an output controller based upon allocation table information. Private data associated with specific elementary streams or packet adaptation fields are repacketized, and written to an output buffer location. In specific implementations, the hardware associated with the system is used to acquire the data stream without any knowledge of the specific protocol of the stream.
    Type: Grant
    Filed: January 24, 2000
    Date of Patent: August 31, 2004
    Assignee: ATI Technologies, Inc.
    Inventors: Branko Kovacevic, Kevork Kechichian
  • Patent number: 6778117
    Abstract: A circuit (100) is adapted for use in a radio frequency receiver and includes a transconductance amplifier (110), a direct digital frequency synthesizer (130), and a digital-to-analog converter (DAC) (120). The transconductance amplifier (110) has an input terminal for receiving a radio frequency signal, and an output terminal for providing a current signal. The direct digital frequency synthesizer (130) has an output terminal for providing a digital local oscillator signal at a selected frequency. The DAC (120) has a first input terminal coupled to the output terminal of the transconductance amplifier (110), a second input terminal coupled to the output terminal of the direct digital frequency synthesizer (130), and an output terminal for providing an output signal.
    Type: Grant
    Filed: February 28, 2003
    Date of Patent: August 17, 2004
    Assignee: Silicon Laboratories, Inc.
    Inventor: Richard A. Johnson
  • Patent number: 6777662
    Abstract: An extended dynamic range pixel cell providing blooming protection is disclosed herein. By applying a timed varying signal to a shunt transistor in order to shunt excess charge generated by a photosensor in response to high intensity illumination, blooming protection can be provided. In particular configurations, blooming protection is provided not only during an integration period but also during a readout period when the pixel cell is generally most susceptible to blooming problems. The time varying voltage is also used to extend the dynamic range of the pixel cell thereby increasing the pixel cells usefulness in high contrast conditions, such as bright sunlight casting deep shadows, nighttime automotive applications, and the like.
    Type: Grant
    Filed: July 30, 2002
    Date of Patent: August 17, 2004
    Assignee: FreeScale Semiconductor, Inc.
    Inventors: Clifford I. Drowley, Shrinath Ramaswami