Abstract: In a method for removing a nitride layer of a semiconductor device, an etchant including about 15 to about 40 percent by volume of hydrofluoric acid, about 15 to about 60 percent by volume of phosphorous acid, and about 25 to about 45 percent by volume of deionized water is prepared. The etchant is provided onto a nitride layer that is formed on a bevel, a front side or a backside of a substrate to remove the nitride layer. The substrate is rinsed using deionized water, and then the substrate is dried. The etchant rapidly removes the nitride layer at a relatively low temperature to avoid damage to the substrate.

Abstract: A multi-chip package includes first through Nth semiconductor chips, each of which includes an input/output pad, an input/output driver coupled to the input/output pad, and an internal circuit. Each of the first through Nth semiconductor chips includes an internal pad for coupling the internal input/output driver and the internal circuit. The internal pads of the first through Nth semiconductor chips are coupled to each other such as via a common pad installed at a substrate. The input/output pad of the first semiconductor chip directly receives an input/output signal from a corresponding pin of the multi-chip package. The second through Nth semiconductor chips indirectly receive the input/output signal via the internal pads coupled to each other.

Abstract: The present invention discloses a portable blackbody furnace comprising a metallic body, a cylindrical cavity with a tapered end in the metallic body, a shielding plate positioned at an open end of the cylindrical cavity, at least a first heaters positioned in the shielding plate, a plurality of second heaters positioned around the metallic body, and a plurality of thermometers positioned in the metallic body. Preferably, the heat capacity of the metallic body is larger than 200 Joules/K, and has radial thickness larger than 5 mm. There are grooves formed on the outer wall of the metallic body, and the second heaters are heating wires embedded inside the grooves. In addition, the flow direction of the current between two adjacent heating wires is opposite to eliminate the magnetic field generated from the current flow.

Abstract: The purging of photoresist from a supply device of semiconductor coating equipment is automatically executed in a controlled manner. The equipment employs a plurality of photoresist bottles for storing the same kind of photoresist. A plurality of supply pipes are respectively connected to the photoresist bottles, respectively. A valve system selectively opens and closes the supply pipes in response to control signals generated by a main controller. A dispense pump forces the photoresist in the open supply pipe through a nozzle. A purge start button issues a purge start command signal to the controller when the button is pressed. The controller then controls the valve system and the dispense pump so as to automatically purge the photoresist according to a sequence effected using a timer.

Abstract: A polishing slurry including an abrasive, deionized water, a pH controlling agent, and polyethylene imine, can control the removal rates of a silicon oxide layer and a silicon nitride layer which are simultaneously exposed during chemical mechanical polishing (CMP) of a conductive layer. A relative ratio of the removal rate of the silicon oxide layer to that of the silicon nitride layer can be controlled by controlling an amount of the choline derivative.

Abstract: In a method for determining the degree of charge-up induced by plasma used for manufacturing a semiconductor device and an apparatus therefor, a predetermined region on a surface of a wafer on which a plasma process has been performed is repeatedly scanned with a primary electron beam. Secondary electrons generated by a reaction between the primary electron beam and the surface of the wafer that are emitted to the outside of the surface of the wafer are collected. The degree of charge-up induced at the surface of the wafer by the plasma used during the plasma process is determined from the change in the amount of collected secondary electrons. Determination as to whether a contact hole is opened or as to the degree of degradation of a gate insulating layer is made based on the degree of charge-up.

Abstract: A receiving device which may include a plurality of pre-amplifiers and a plurality of samplers. Each of the plurality of samplers is connected to the output ports of a corresponding pre-amplifier. Each sampler samples data signals input thereto in response to a corresponding clock signal. The receiving device of a semiconductor memory unit may reduce input capacitance seen from the outside of chip and eliminate mutual interference of signals so as to prevent errors from being generated when data is extracted in the event of over sampling using pre-amplifiers. Furthermore, the receiving device can separately control the pre-amplifier for samplers that receive clock signals for data alignment and the pre-amplifier for samplers that accept clock signals for repeated data reception.

Abstract: There is disclosed a method of treating a substrate material or a film present on the material surface comprising cyclically performing the following steps: (a) etching the material or film; (b) depositing or forming a passivation layer on the surfaces of an etched feature; and (c) selectively removing the passivation layer from the etched feature in order that the etching proceeds in a direction substantially perpendicular to the material or film surface. At least one of the steps (a) or (b) is performed in the absence of a plasma. Also disclosed is an apparatus for performing the method.

Abstract: A mass flow controller includes a base having a first passage, an inlet portion for introducing fluid into the first passage, an outlet portion for releasing the fluid from the first passage, and a second passage branched from a first upstream portion of the first passage and connected to a second downstream portion of the first passage A mass flow sensor is connected to the first passage between the inlet portion of the base and the first portion of the first passage; A first valve is disposed in-line with the first passage between the first and second portions. The first valve controls the mass flow of the fluid passing through the first passage;. A second valve is disposed in-line with the second passage to opens/close the second passage. A valve controller compares the mass flow measured by the mass flow sensor to a standard flow, and then positions the first valve such that the measured mass flow corresponds to the standard flow.

Abstract: An acoustic resonator of one inventive aspect includes a substrate, at least one generally crystalline primer layer provided on the substrate either directly or on top of one or more intermediate layers, a generally smooth and generally crystalline electrode layer provided on the primer layer, and a piezoelectric layer provided on the electrode layer. The primer layer, or at least one of the primer layers, has a crystallographic structure belonging to a first crystal system, and the electrode layer has a crystallographic structure belonging to a second crystal system which is different to the first system. The atomic spacing of the primer layer or at least one of said primer layers and that of the electrode matches to within about 15%.

Abstract: A cleanling apparatus for removing contaminants from the surface of a substrate includes two parts: one which produces an aerosol including frozen particles and directs the aerosol onto the surface of the substrate to remove contaminants from the surface by physical force, and another part in which a fluid including a gaseous reactant is directed onto the surface of the substrate while the surface is irradiated to cause a chemical reaction between the reactant and organic contaminants on the surface, to chemically removing the organic contaminants. In the method of cleaning the substrate, the physical and chemical cleaning processes are carried out in a separate manner from one another so that the frozen particles of the aerosol are not exposed to the effects of the light used in irradiating the surface of the substrate. Therefore, the effectiveness of the aerosol in cleaning the substrate is maximized.

Abstract: A semiconductor device fabrication apparatus is cleaned after a conductive layer is formed on a metal oxide layer of a substrate. The substrate is disposed on a heater in a process chamber of the apparatus, and the conductive layer is formed by introducing source gases into the chamber. Then the substrate is transferred out of the process chamber. At least one by-product of a reaction between the source gases and the metal oxide layer adheres to a surface inside the chamber, such as to a region or regions of the heater. Once the semiconductor substrate has been transferred outside the process chamber of the semiconductor fabrication apparatus, the by-product(s) is/are removed by evaporation. The by-product(s) can be evaporated using gas, such as one of the source gases, so that the process chamber can remain closed.

Abstract: A sealed line structure equipped with a heater block for a process chamber for use in manufacturing a semiconductor device is provided. The structure includes a housing member, a movement prevention member is constructed of a lock nut, a clamp ring and an elastic unit, and a power line or a thermocouple line is sealed by the configuration of the housing member, the movement prevention member, a cover member, and a connector member.

Abstract: Write operations that simultaneously program multiple memory cells on the same word line in an MBPC or MLC non-volatile memory employ word line voltage variation, programming pulse width variation, and column line voltage variation to achieve uniform programming accuracy across a range of target threshold voltages. One type of write operation reaches target threshold voltages during respective time intervals and in each time interval uses programming parameters that optimize threshold voltage resolution for the target threshold voltage corresponding to that interval. During or at the end of write operations or the ends of each interval, remedial programming sequences can adjust the threshold voltages of memory cells that program slowly.

Abstract: Embodiments of a wafer polishing and broken platen belt sensing apparatus are disclosed, wherein the apparatus comprises a polishing platen, a motor, a platen belt, a photo sensor, and an encoder connected to the motor and adapted to output a first signal in accordance with the rotational speed of the motor. In one embodiment, the apparatus comprises a photo sensor adapted to output a second signal in accordance with the rotational speed of the polishing platen and is adapted to generate an interlock signal when the motor and the polishing platen are not both rotating normally. In another embodiment, the apparatus comprises a photo sensor adapted to output the second signal in accordance with the rotational speed of the platen belt and is adapted to generate an interlock signal when the motor and the platen belt are not both rotating normally.

Abstract: A Voice over Internet Protocol (VoIP) network is described in which session state is maintained in access switches, but not signaling gateways which maintain transaction state only during pendency of a related transaction. The signaling gateway further provides transparent inter-operation between the VoIP network and non-IP networks, such as the PSTN, by means of a translator which directly translates messages between the networks.

Abstract: A memory module includes a substrate having a common substrate body, a plurality of first memory chips located over a surface of the common substrate body, a conductive pattern which electrically connects at least some of the plurality of first memory chips, and an external terminal which is electrically connected to the conductive pattern. The memory module further includes at least one second memory chip mounted over a respective one of the plurality of first memory chips and electrically connected to the conductive pattern, where each one of the plurality of first memory chips mounted below the at least one second memory chip is disabled.

Abstract: In the control method in a management system of semiconductor manufacturing equipment to enhance a product yield through a control of etching process, information of a corresponding lot for the etching process is recognized. It is checked whether the information of corresponding lot is for an etching process after a predetermined RF time of etching apparatus. RF time of the etching apparatus is compared with the predetermined RF time, and it is decided whether the etching process of corresponding lot can be performed in the etching apparatus if the etching process for the corresponding lot should be performed after a lapse of the predetermined RF time.

Abstract: A test structure and method for testing a semiconductor device are provided. The test structure including a first test pattern having a plurality of electrically separated metal patterns, a plurality of metal vias formed in opposite end portions of the respective metal patterns, and a second test pattern connected to the first test pattern through the metal vias. By using this structure, the presence, nature, and size of a metal failure can be detected by analyzing a resistance arising from the application of a test voltage to the first test pattern.

Abstract: A system and method adapted to detect a malfunction related to a pad conditioner in a polishing apparatus are disclosed. The pad conditioner includes a conditioning pad seated on a conditioner head and a drive motor rotating the conditioner head. The system also comprises a current sensor connected to the drive motor, adapted to detect electrical current drawn by the drive motor, and provide a corresponding current value, a Personal Computer (PC) receiving the current value, adapted to compare the received current value to first and second reference values, and generate a drive indication signal in response to the comparison, and a main controller receiving the drive indication signal and adapted to generate an interlock signal halting operation of the polishing apparatus in response to the drive indication signal.