Abstract: A surface of a compound III-V semiconductor device is passivated and protected, respectively, by treatment with a sulfur-containing or selenium-containing passivation film on the surface followed by the deposit of a GaN, GaP, InGaP, GaAsP, ZnS or ZnSe protection layer. Prior to passivation and deposition of the protective layer, previously formed contact metalizations may be protected with a liftoff film or layer. A low temperature MOCVD process is used to deposit the protection layer so that the integrity of the previously deposited contact metalization is maintained. The preferred range for MOCVD deposition of the protection layer is in the range of about 300.degree. C. to about 450.degree. C. This processing temperature range is within a temperature range where stable contact metalization exists.

Abstract: An optical gain medium comprising, for example, an optical semiconductor device which is differentially pumped and a master oscillator power amplifier (MOPA) device employing such an amplifier. The gain medium may have a linear stripe region or a diverging stripe region that allows the light propagating therein to diverge along at least part of its length, such as a flared or tapered amplifier having a gain region that increases in width toward its output at a rate that equals or exceeds the divergence of the light. The amplifier is pumped with a current density at its input end which is smaller than the current density used to pump the output end for maintaining coherence of the beam to high power levels employing differential pumping.

Abstract: A method of producing a high power and brightness beam from diode laser source that either has a single emitting element or array with a plurality of segments or emitters that are concurrently addressable, or has a plurality of elements or subarrays each having a plurality of laser segments or emitters, which elements or subarrays are independently addressable relative to one another. Beam filling and focusing optics are disposed in front of the emitters so that light from the individual emitters from each subarray converge to from a single overlapping spot. Segmentation of laser subarrays and emitters improves laser life by reducing thermal gradients and isolating any local failures to a single segment emitters, while the focusing of the segments or emitters to overlapping light spots increases the tolerance of the source to local failures. Two or more emitters in a given element must fail before the source is considered to have failed.

Abstract: Coherent light sources combining a semiconductor optical source with a light diverging region, such as a flared resonator type laser diode or flared amplifier type MOPA, with a single lens adapted to correct the astigmatism of the light beam emitted from the source is disclosed. The lens has an acircular cylindrical or toroidal first surface and an aspheric or binary diffractive second surface. The first surface has a curvature chosen to substantially equalize the lateral and transverse divergences of the astigmatic beam. Sources with an array of light diverging regions producing an array of astigmatic beams and a single astigmatism-correcting lens array aligned with the beams are also disclosed. The single beam source can be used in systems with frequency converting nonlinear optics. The array source can be stacked with other arrays to produce very high output powers with high brightness.

Abstract: An optical fiber having a single mode absorptive core whose position, relative to the cross sectional plane of the inner multimode cladding, varies along the length of the fiber. The periodicity and the magnitude of the relative displacement of the core with respect to the cladding are such that the transfer of radiation from the inner multimode cladding to the core is substantially improved over conventional fibers.

Abstract: An external cavity, continuously tunable wavelength source comprising a coherent light source having an external cavity including a reflector, such as a mirror or right-angle prism, for reflecting a selected wavelength from a diffraction grating back into the coherent light source. The wavelength is selected by simultaneous rotation and translational movement of the reflector about a pivot point such that the optical path length of the external cavity is substantially identical to a numerical integer of half wavelengths at a plurality of tunable wavelengths about a central wavelength of a tunable bandwidth for the source such that cavity phase error is zero at the central wavelength and is maximally flat on either side of the center wavelength within the tunable bandwidth. The location of said pivot axis is chosen to set the cavity phase error equal to zero and its first and second derivatives substantially equal to zero at exactly one wavelength.

Abstract: An optical transmission link has both a transmitter module and a receiver module operable under uncooled conditions, i.e., without the need of costly cooling equipment, such as thermoelectric coolers. The optical transmission system includes both a semiconductor laser diode source and an optical receiver module that are both designed to operate uncooled under high frequencies (e.g., GHz range) over a wide temperature range without significant changes in signal bandwidth and at temperatures in excess of 125.degree. C. Compensation is provided to reduce the effect of photodiode noise and amplifier noise. In addition, temperature compensation can be provided that provides for overall reduction in receiver noise across the bandwidth of the receiver module through maintenance of a temperature environment optimizing receiver performance.

Abstract: An optical amplifier pumping system with built-in redundant reliability for lightwave communication system provides plural levels of redundancy. A first level of redundancy deals with redundancy in the form of plural primary laser diode sources in the lightwave communication system. A second level of redundancy deals with redundancy of multiple single mode laser emitters on the same chip or bar sufficiently segmented so as not to interfere with operation of or cause failure to adjacent or neighboring emitters on the same chip or bar. A third level of deals with redundancy of a plurality of fiber pump sources for pumping a plurality of serially connected injection signal fiber amplifiers.

Abstract: An optical device for modulating or interacting with radiation guided and propagating along an optical longitudinal axis of an optical waveguide, such as, an optical fiber, has a different directional geometry compared to conventionally comparable devices such as, for example, plasmon or planar surface modulators for optical fibers. The geometry includes a nonlinear, electro-optic medium formed between two spatially disposed electrodes. The medium/electrode sandwich is aligned along the waveguide longitudinal propagating axis and extends in a radial direction from the optical waveguide core with the inner end of the medium in spatial proximity to the waveguide core for evanescent coupling with the radiation field propagating in the waveguide.

Abstract: A travelling-wave semiconductor laser amplifier having suppressed self-oscillation is provided. When incorporated into a master oscillator power amplifier device, such a device has improved light output versus amplifier current characteristics. Also provided is a method for suppressing self-oscillation in travelling-wave semiconductor laser amplifier structures for improving the characteristics of the device into which the amplifier is incorporated.

Abstract: A fibre Bragg grating is used to stabilize the intensity and frequency fluctuations of a diode laser. The diode laser is connected with an opto-mechanical apparatus to the fibre which contains the grating. The grating is formed in the guided-mode region of the optical fibre. The wavelength of maximum grating reflectivity is selected to lie near the maximum of the diode laser gain bandwidth. The magnitude and bandwidth of the grating reflectivity stabilizes the diode laser output without appreciably reducing the optical output power from the end of the fibre. The bandwidth of the optical spectrum of the diode laser is selected depending on the distance of the grating from the diode laser.

Abstract: Apparatus for generating laser light having a wavelength in the range of about 1012 to 1022 nm comprising a double clad optical fiber having a core doped with triply ionised ytterbium ions, a source of laser light emitting at a wavelength of about 800 to 1070 nm and coupled to launch the fight into the fiber, and fiber Bragg gratings written into the core region of the optical fiber so as to provide optical discrimination of the emission centered in the range of about 1012 to 1022 nm.

Abstract: A semiconductor laser having a light amplifying diode heterostructure body having a single spatial mode aperture region or waveguide and a flared or tapered gain region having a narrow input end and wider output end provided in a resonant cavity, a portion of which cavity may be external of the body. The flared gain region has a narrow aperture end and a wide output end with narrow aperture end optically coupled to a single mode waveguide. A saturable aborbing region is formed as part of the single mode waveguide region and not between it and the flared gain section, and is reverse biased to provide for mode locked operation. The flared gain region and waveguide may be differentially pumped or modulated with current provided by separate contacts, and the flared gain region may be divided into one or more flared gain sections which may be differentially or separately pumped.

Abstract: An optical coupling system for improving the coupling efficiency of an elliptical light beam into optical fiber comprises a cylindrical concave microlens on the end facet of the optical fiber in conjunction with a pair of bulk optic asphere lenses. A method of producing a cylindrical concave microlens according to the invention consists of translating a fine wire across the end facet of an optical fiber so as to create a cylindrical grove.

Abstract: A wavelength tunable, semiconductor laser includes a gain region, e.g., a flared amplifier region, that permits light propagation with a diverging phase front along at least a portion of the gain region. Optical feedback defines a resonant laser cavity that has a first reflector at a first end of the cavity a second reflector at a second end of the cavity for reflecting at least a portion of the light back propagating in the cavity back into the cavity. Wavelength tuned selection, such as through orientation of a grating reflector or via a prism, is provided in the resonant laser cavity for producing a relatively lower optical loss in the cavity to a selected wavelength or a band of wavelengths of the light propagating within the cavity relative to other nonselected wavelengths such that stable laser oscillation is established at the selected wavelength or band of wavelengths.

Abstract: III-V arsenide-nitride semiconductor crystals, methods for producing such crystals and devices employing such crystals. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors.

Abstract: A fibre Bragg grating is used to stabilize the intensity and frequency fluctuations of a diode laser. The diode laser is connected with an opto-mechanical apparatus to the fibre which contains the grating. A polarization maintaining fibre is used. The grating is formed in the guided-mode region of the optical fibre using photorefractive techniques. The wavelength of maximum grating reflectivity is selected to lie near the maximum of the diode laser gain bandwidth. The magnitude and bandwidth of the grating reflectivity is sufficient to stabilize the diode laser output without appreciably reducing the optical output power from the end of the fibre. The bandwidth of the optical spectrum of the diode laser is increased or decreased relative to the solitary diode laser operating characteristics depending on the distance of the grating from the diode laser.

Abstract: A wavelength-stabilized, semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the heterostructure proximate to the Wide end of the flared gain region is partially reflective and combines with an external reflector to form a resonant cavity that is effectively unstable. The intracavity light-emitting surface proximate to the narrow aperture end is antireflection coated. The external reflector may be a planar mirror or a grating reflector. A lens or an optical fiber may couple the aperture end of the flared gain region to the external reflector. Frequency-selective feedback is provided by orienting the grating reflector or providing a prism in the cavity in front of the external planar mirror. Other filtering elements may also be placed in the external cavity.

Abstract: A fibre Bragg grating is used to stabilize the intensity and frequency fluctuations of two diode lasers simultaneously. The polarized optical output from the diode lasers is collimated and directed through a beam combiner device which combines the separate beams into a single beam, thus summing the optical power. The combined beam is directed into an optical fibre containing a fibre Bragg grating which reflects a fraction of the light back into each diode laser to cause low-coherence, stable operation of each laser.

Abstract: An arm-attached band type radio apparatus capable of providing a stable antenna gain without being affected by the band size has an arm attaching band that is formed into a loop by way of a buckle 31 having an metallic electrode plate 32, first and second conductor plates 5L, 5R, shaped so as to form a slot antenna, to form a loop-like slot antenna. The distal end side of conductor plate 5L has an overlap capacitance changing portion 15 so that, when the connecting position of the band changes according to the thickness of the wearer's arm, the overlap capacitance between first conductor plate 5L and metallic electrode 32, is changed. The magnitude of the capacitance change corresponds to a change in the inductance of the antenna to compensate for a shift in the resonance frequency. The overlap capacitance can be changed by controlling the overlap area or the effective dielectric constant of the material separating conductor plate 5L from metallic electrode 32.