Abstract: A frequency conversion system includes at least one source providing a first near-IR wavelength output including a gain medium for providing high power amplification, such as double clad fiber amplifier, a double clad fiber laser or a semiconductor tapered amplifier to enhance the power output level of the near-IR wavelength output. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Ra-man/Brillouin amplifier or oscillator between the high power source and the NFM device.

Abstract: Power scaling by multiplexing multiple fiber gain sources with different wavelengths, pulsing or polarization modes of operation is achieved through multiplex combining of the multiple fiber gain sources to provide high power outputs, such as ranging from tens of watts to hundreds of watts, provided on a single mode or multimode fiber.

Abstract: Double clad fiber gain medium systems particularly adapted for marking indicia on surfaces of articles are disclosed. These systems provide a modulated output from a pump or seed semiconductor laser source to a double clad fiber gain medium which provides an amplified marking output scanned over the article surface with an optical scanner forming a plurality of strokes, the completion of which results in the indicia.

Abstract: Power scaling by multiplexing multiple fiber gain sources with different wavelengths, pulsing or polarization modes of operation is achieved through multiplex combining of the multiple fiber gain sources to provide high power outputs, such as ranging from tens of watts to hundreds of watts, provided on a single mode or multimode fiber.

Abstract: A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of the Group III-V deposited layers improving carrier density through a decrease in the voltage drop require to generate carrier flow; reduction of contaminants in the growth of Group III-V AlGaInP-containing layers with compositional Al, providing for quality material necessary to achieve operation at the desired visible wavelengths; the formation of an optical resonator cavity that provides, in part, weak waveguiding of the propagating light; and the utilization of a mechanism to provide for beam spreading and filing in a beam diverging gain section prior to actively aggressive gain pumping of the propagating light in the device.

Abstract: A Group III-V nitride compound semiconductor light emitting device is constructed without the employing homogeneous layers of AlGaN. Instead of homogeneous AlGaN cladding layers, GaN cladding layers are utilized. Since high temperature growths that accompany the formation of AlGaN layers is no longer required, the stochiometric amount of indium in InxGa1-xN core layers utilized in the active region may be made greater to achieve better electrical and optical properties in the device. The loss of waveguiding achieved by the higher refractive index layers of AlGaN is compensated by the use of core layers of InGaN on adjacent sides of the active region comprising InyGa1-yN layer or layers.

Abstract: A monitoring apparatus for a high power light source comprises a fiber medium containing a high power output for an application with a first monitoring tap optically coupled to the fiber medium for removing a small portion of light from the output to monitor the output power level. A photodetector is optically coupled to receive the light portion to monitor the output power level. The photodetector, however, has a predetermined saturation level below the power level provided from the first monitoring tap. Therefore, at least one light attenuator is provided between the first monitoring tap and the photodetector to provide a level of monitoring power within a range below the saturation level of the photodetector to accurately monitor changes in the output power present on the fiber medium of the light source.

Abstract: Apparatus is provided for an improved stabilized laser source comprising a laser source having a light beam output and an electrical input. An optical waveguide, such as an optical fiber, having an input end is optically coupled to the laser source to receive the light beam. A reflector in the optical fiber, such as a fiber grating, reflects a portion of the light beam output back into the laser source. The reflector is provided at a distance from the laser source permitting the laser source to switch between states of coherence and coherence collapse of operation. The electrical input of a drive signal for the laser source includes a modulated signal with variations in amplitude to the electrical input to control the variation in switching between the states of coherence and coherence collapse of the laser source so that continuous laser operation remains kink-free.

Abstract: The invention relates to laser diode arrays having high beam quality and high beam brightness. In one approach, a laser diode array package includes a mount and first and second laser diode arrays disposed on the mount. Each of the laser diode arrays defines an optical axis and has an emitting surface lying in an emitting surface plane. The emitting surface plane of the first laser diode array is displaced relative to the emitting surface plane of the second laser diode array in a direction parallel to one of the optical axes. The optical axes of the first and second laser diode arrays are offset from each other in a direction perpendicular to one of the optical axes. First and second lenses are disposed relative to respective emitting surfaces to reduce divergence of light output from the emitting surfaces. In another approach, laser diode array bars are stacked and the individual output beam from each bar is collimated using a short focal length, low aberration lens.

Abstract: A fiber Bragg grating is used to stabilize the intensity and frequency fluctuations of a diode laser. The diode laser is connected with an opto-mechanical apparatus to the fiber which contains the grating. The grating is formed in the guided-mode region of the optical fiber. The wavelength of maximum grating reflectivity is selected to lie near the maximum of the diode laser gain bandwidth. The magnitude and bandwidth of the grating reflectivity stabilizes the diode laser output without appreciably reducing the optical output power from the end of the fiber. The bandwidth of the optical spectrum of the diode laser is selected depending on the distance of the grating from the diode laser.

Abstract: Laser diode pumped mid-IR wavelength sources include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.

Abstract: Coherent light sources combining a semiconductor optical source with a light diverging region, such as a flared resonator type laser diode or flared amplifier type MOPA, with a single lens adapted to correct the astigmatism of the light beam emitted from the source is disclosed. The lens has an acircular cylindrical or toroidal first surface and an aspheric or binary diffractive second surface. The first surface has a curvature chosen to substantially equalize the lateral and transverse divergences of the astigmatic beam. Sources with an array of light diverging regions producing an array of astigmatic beams and a single astigmatism-correcting lens array aligned with the beams are also disclosed. The single beam source can be used in systems with frequency converting nonlinear optics. The array source can be stacked with other arrays to produce very high output powers with high brightness.

Abstract: A method and apparatus is disclosed for the manufacture of an optical fiber preform having incorporated therein a comparatively high concentration of rare earth dopant material, and which thus can be drawn and processed into an optical fiber having low numerical aperture, low core attenuation, and high pumping power absorption. The high concentrations of rare earth dopant material are accomplished through either the “hybrid vapor processing” (HVP) method or a “hybrid liquid processing” (HLP) method, each capable of being practiced in combination or independently of one another. The HVP method involves the vaporization of a rare earth halogen by the exposure thereof to a sufficiently elevated temperature, independently, or contemporaneously with the transport of the resultant rare earth halogen laden vapor, into a glass forming oxidation reaction zone on a flowing stream of essentially an unreactive inert gas, such as helium.

Abstract: A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of the Group III-V deposited layers improving carrier density through a decrease in the voltage drop require to generate carrier flow; reduction of contaminants in the growth of Group III-V AlGaInP-containing layers with compositional Al, providing for quality material necessary to achieve operation at the desired visible wavelengths; the formation of an optical resonator cavity that provides, in part, weak waveguiding of the propagating light; and the utilization of a mechanism to provide for beam spreading and filing in a beam diverging gain section prior to actively aggressive gain pumping of the propagating light in the device.

Abstract: A method for fabricating a high power laser diode device with an output emission with a nearly circular mode profile for efficient coupling into an optical fiber. A vertical taper waveguide and a window tolerance region are formed in a base structure of the device employing successive etching steps. Further regrowth completes the device structure. The resultant laser device has a vertical and lateral tapered waveguide that adiabatically transforms the highly elliptical mode profile in an active gain section of the device into a substantially circular mode profile in a passive waveguide section of the device.

Abstract: An optical amplifier pumping system with built-in redundant reliability for lightwave communication system provides plural levels of redundancy. A first level of redundancy deals with redundancy in the form of plural primary laser diode sources in the lightwave communication system. A second level of redundancy deals with redundancy of multiple single mode laser emitters on the same chip or bar sufficiently segmented so as not to interfere with operation of or cause failure to adjacent or neighboring emitters on the same chip or bar. A third level of redundancy deals with redundancy of a plurality of fiber pump sources for pumping a plurality of serially connected injection signal fiber amplifiers.

Abstract: A laser marking system comprises a high power fiber laser consisting of a double clad fiber having a doped core surrounded by an inner pump cladding and providing an optical output for marking; a high power laser diode source for pumping the double clad fiber laser via an input into the inner pump cladding; an optical scanner coupled to receive the marking output from the double clad fiber laser to scan the output over a surface of an article to be marked by sweeping the marking output in one, two or three dimensions to form strokes, the completion of which comprises indicia to be marked the article surface; and a controller to control the operation of the scanner in synchronism with the modulation of the laser diode pump source to initiate the marking output and sweep and modulate the marking optical output in one, two or three dimensions to form strokes comprising the indicia. A main advantage of the fiber laser marking system over CO.sub.

Abstract: A high power laser optical amplifier system for material processing comprises multiple stage fiber amplifiers with rejection of propagating ASE buildup in and between the amplifier stages as well as elimination of SBS noise providing output powers in the range of about 10 .mu.J to about 100 .mu.J or more. The system is driven with a time varying drive signal from a modulated semiconductor laser signal source to produce an optical output allowing modification of the material while controlling its thermal sensitivity by varying pulse shapes or pulse widths supplied at a desire repetition rate via modulation of a semiconductor laser signal source to the system to precisely control the applied power application of the beam relative to the thermal sensitivity of the material to be processed. The high power fiber amplifier system has particular utility in high power applications requiring process treatment of surfaces, such as polymeric, organic, ceramic and metal surfaces, e.g.

Abstract: A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of the Group III-V deposited layers improving carrier density through a decrease in the voltage drop require to generate carrier flow; reduction of contaminants in the growth of Group III-V AlGaInP-containing layers with compositional Al, providing for quality material necessary to achieve operation at the desired visible wavelengths; the formation of an optical resonator cavity that provides, in part, weak waveguiding of the propagating light; and the utilization of a mechanism to provide for beam spreading and filing in a beam diverging gain section prior to actively aggressive gain pumping of the propagating light in the device.

Abstract: A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of the Group III-V deposited layers improving carrier density through a decrease in the voltage drop required to generate carrier flow; reduction of contaminants in the growth of Group III-V AlGaInP-containing layers with compositional Al, providing for quality material necessary to achieve operation at the desired visible wavelengths; the formation of an optical resonator cavity that provides, in part, weak waveguiding of the propagating light; and the utilization of a mechanism to provide for beam spreading and filing in a beam diverging gain section prior to actively aggressive gain pumping of the propagating light in the device.