Abstract: Disclosed is a method for the formation of features in a damascene process. According to the method, vias are formed in a dielectric layer and then covered by a layer of high molecular weight polymer. The high molecular weight polymer covers the vias but does not enter the vias. A trench is then etched through the high molecular weight polymer and the dielectric layer. Any remaining high molecular weight polymer is then removed.

Abstract: A method is provided in which for fabricating a complementary metal oxide semiconductor (CMOS) circuit on a semiconductor-on-insulator (SOI) substrate. A plurality of field effect transistors (FETs) are formed, each having a channel region disposed in a common device layer within a single-crystal semiconductor layer of an SOI substrate. A gate of the first FET overlies an upper surface of the common device layer, and a gate of the second FET underlies a lower surface of the common device layer remote from the upper surface. The first and second FETs share a common diffusion region disposed in the common device layer and are conductively interconnected by the common diffusion region. The common diffusion region is operable as at least one of a source region or a drain region of the first FET and is simultaneously operable as at least one of a source region or a drain region of the second FET.

Abstract: A dispensing system for feeding paste through a screen onto a workpiece monitors the position of a piston applying pressure to the paste with a linear variable differential transformer and sets limits on the slope of the piston displacement is a measure of the feed rate and the “spring back” of the piston when pressure is released, as a measure of trapped air in the system.

Abstract: A structure for a system of chip packages includes a master substrate and at least one subset substrate of the master substrate. The subset substrate includes a portion of the master substrate that has an identical pin out pattern as the portion of the master substrate. The subset substrate has identical internal net lists as the portion of the master substrate. The subset substrate is adapted to accommodate a smaller chip than the master substrate. The master substrate is the largest substrate in the system. The invention also prepares a system of chip packages. The invention selects a master substrate and then selects a subset substrate of the master substrate.

Abstract: A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein the first component and the second component are on opposite sides of the buried oxide layer, thereby causing the buried oxide layer to perform a function within the electronic device. Entire circuits can be designed around this technique.

Abstract: A stacked via structure (200) adapted to transmit high frequency signals or high intensity current through conductive layers of an electronic device carrier is disclosed. The stacked via structure comprises at least three conductive tracks (205a, 205b, 205c) belonging to three adjacent conductive layers (110a, 110b, 110c) separated by dielectric layers (120), aligned according to z axis. Connections between these conductive tracks are done with at least two vias (210, 215) between each conductive layer. Vias connected to one side of a conductive track are disposed such that they are not aligned with the ones connected to the other side according to z axis.