Abstract: An evaluation configuration has a first MOS evaluation stage, an isolation stage, and a bipolar evaluation stage. The isolation stage is connected between the first MOS evaluation stage and the bipolar evaluation stage. The isolation stage isolates the first MOS evaluation stage from the bipolar evaluation stage. The evaluation configuration can reliably detect very small read signals and allows a high integration density.
Abstract: Novel poly-o-hydroxyamides can be cyclized to give polybenzoxazoles which have a good diffusion barrier effect with respect to metals. The poly-o-hydroxyamides can be applied to a semiconductor substrate by customary techniques and converted into the polybenzoxazole in a simple manner by heating. This results in a good barrier layer with respect to diffusion of metals. This allows the diffusion barrier between conductor track and dielectric to be substantially dispensed.
Type:
Grant
Filed:
June 27, 2003
Date of Patent:
October 19, 2004
Assignee:
Infineon Technologies AG
Inventors:
Recai Sezi, Andreas Walter, Anna Maltenberger, Klaus Lowack
Abstract: A device for feeding sheets to a sheet-processing machine includes a feeding table. Front lays are disposed at a front end of the feeding table, as viewed in a sheet-conveying direction. A first guide device is disposed immediately upstream from the front lays, as viewed in the sheet-conveying direction, and above the feeding table, and is adjustable vertically with respect to the feeding table. A second guide device is disposed upstream from the vertically adjustable first guide device, as viewed in the sheet-conveying direction. The second guide device is disposed in a position oriented parallel to the first guide device. A method of operating the sheet-feeding device is also provided.
Abstract: Chemically amplified photoresists exhibit increased transparency at a wavelength of 157 nm. The chemically amplified photoresist includes a polymer containing first repeating units derived from a cinnamic acid or a cinnamic ester, which are at least monofluorinated or substituted by fluoroalkyl groups. Processes for structuring substituents using transparency enhancement of resist copolymers for 157 nm photolithography using fluorinated cinnamic acid derivatives are also included.
Type:
Grant
Filed:
July 30, 2002
Date of Patent:
October 19, 2004
Assignee:
Infineon Technologies AG
Inventors:
Christoph Hohle, Jörg Rottstegge, Christian Eschbaumer, Michael Sebald
Abstract: An LED array has a plurality of LED chains, which each have at least one LED and are connected in parallel. The LED array has at least one output for feeding back radiation generated to a power supply unit. Preferably, at least one reference LED chain is connected in parallel with the LED chains and a photosensitive component is provided, the photosensitive component detecting the radiation emitted by the reference LED chain. The photosensitive component generates a measurement signal in a manner dependent on the radiation generated by the reference LED chain, which signal serves for providing feedback to the power supply unit.
Abstract: A data read access and a data write access is shared between two memory banks. A first memory bank of which is operated with a clock that is shifted by half a clock pulse with respect to the operating clock of the other, second memory bank. Partial data streams are combined at the output of the two memory banks to form a data stream with double the frequency.
Type:
Grant
Filed:
October 7, 2003
Date of Patent:
October 12, 2004
Assignee:
Infineon Technologies AG
Inventors:
Robert Kaiser, Helmut Schneider, Florian Schamberger
Abstract: An inkjet printing system includes a configuration of nozzles, respectively having a nozzle chamber formed with a nozzle opening and provided with a respective piezoelectric element. A control device controls the piezoelectric elements. The control device has at least two signal paths switchable-on individually for each of the nozzles. An inkjet printing process uses at least part of the printing system.
Abstract: A controllable field-effect semiconductor component has a semiconductor body including a first surface, a first layer of a first conduction type, and a second layer of the first conduction type lying above the first layer. The semiconductor component also has a first terminal zone that can be contact-connected at the first surface of the semiconductor body. The first terminal zone is formed in the second layer. A channel zone of a second conduction type surrounds the first terminal zone. Compensation zones of the second conduction type that are formed in the second layer are provided. Additionally, the semiconductor component has a second terminal zone of the first conduction type that can be contact-connected at the first surface of the semiconductor body. The second terminal zone is formed in the second layer.
Abstract: A housing device that is used to accomodate at least one power semiconductor module has increased flexibility. Areas of the housing which are configured to receive contact elements in a variety of positions are configured such that the contact elements can be disposed and oriented in a plurality of ways when disposed in each position.
Type:
Grant
Filed:
November 18, 2002
Date of Patent:
October 12, 2004
Assignee:
Eupec Europaeische Gesellschaft fuer Leistungshalbleiter mbH
& Co. KG
Abstract: The invention relates to a method for overload-free driving of an actuator, in which an activation counter is incremented or decremented each time an activation request signal occurs, in which, depending on each occurrence of an activation request signal, a drive signal for the actuator is generated if the counter reading of the activation counter is less than or greater than a predetermined maximum or minimum counter reading, in which the counter reading is in each case decremented or incremented if the time since the last generation of a drive signal or since the deactivation of the drive signal is greater than or equal to a predetermined or predeterminable interval time or if the time since the last decrementing of the activation counter is greater than or equal to the interval time.
Abstract: The valve drive mechanism is particularly suitable for internal combustion engines of motor vehicles. The mechanism has at least one driven cam element and a valve control member which is moved (translationally or rotationally) by the cam element. The cam element is rotatingly mounted in a flexible surround element which is connected to the valve control member in a plane orthogonal to the axis of rotation of the cam element. The surround element can be reversably extended, such as elastically extended, to enable a variation in the resulting valve lift.
Abstract: A memory device includes a memory module, a control unit and a bus connected to the memory module and the control unit. In an accessing operation of the memory module via bus, the control unit applies a first command which causes high power consumption in the memory module, to the memory module via part of the bus only.
Abstract: An electromechanical actuator has at least one electromagnet, an armature and a resetting device. A connector is provided, with at least one contact element, which is electro-conductively connected to the coil of the electromagnet, and which is disposed in such a way that, at least during the assembly to the actuator onto a support, it can be electrically contacted by an assembly contacting element.
Type:
Grant
Filed:
November 14, 2001
Date of Patent:
October 12, 2004
Assignees:
Siemens Aktiengesellschaft, Bayerische Motoren Werke Aktiengesellschaft
Inventors:
Erwin Bauer, Wolfram Bohne, Wolfgang Hundt, Hanspeter Zink
Abstract: A housing for biometric sensor chips and a method for producing such a housing includes a freely accessible fingerprint checking area on a sensor chip, a mount substrate with contact outer surfaces thereon, the mount substrate being a mounting strip with perforated edges, on which the contact outer surfaces are disposed partially outside a housing frame, and the sensor chip is positioned within the housing frame.
Abstract: The fitting, in particular a safety valve, operates according to the relief principle or according to the loading principle. The fitting is opened and closed by a plurality of control parts. The control parts are connected in series in the control line of the fitting and are each actuated by a control valve. The control parts open the fitting only when all the control parts are in a position which opens the fitting. The fitting closes as soon as even only one of the control parts is in a position which closes the fitting.
Type:
Grant
Filed:
August 26, 2003
Date of Patent:
October 12, 2004
Assignee:
Framatome ANP GmbH
Inventors:
Hermann-Josef Conrads, Erwin Laurer, Jürgen Model
Abstract: A method for conveying sheets, which have been printed in a printing machine, through a sheet delivery system above a sheet deposit pile by a sheet conveying device and, at the same time, dusting the sheets with a powder, and preventing uncontrolled spread of excess powder, includes interrupting a powder-laden air flow extending in a direction towards the printing machine along an empty strand of the sheet conveying device in a housing of the sheet delivery system at least at one interruption location between a free end of the sheet delivery system and the printing machine, so that transport of entrained powder in a direction towards the printing machine is prevented; a prevention device for performing the method; a sheet delivery system including the prevention device; and a sheet-fed printing machine in combination with the sheet delivery system.
Abstract: A heating system, a method for heating a deposition reactor or an oxidation reactor, and a reactor utilizing the heating system are particularly suited for low-pressure chemical vapor deposition or oxidation. A heating system is particularly useful for heating a reactor in which a plurality of wafers is held perpendicularly to the reactant gas flowing direction that is parallel to the longitudinal axis of the reactor, to enable a deposition or oxidation reaction. The heating system is adapted to change the reactor temperature during the process. In addition, a method heats a reactor to enable a reaction. Preferably, each of a plurality of reactor zones, into which the reactor is divided in a direction parallel to the reactant gas flowing direction, is heated at a different temperature profile indicating the temperature of this specific zone versus time. Thereby, the in-plane uniformity of deposited or oxidized layers can be largely improved.
Abstract: On a substrate, first and second electrical connecting elements of an integrated circuit are disposed next to one another along a first direction. The first electrical connecting element is at a first distance from the second electrical connecting element. First and interconnects are disposed on the substrate, the first interconnect being connected to the first electrical connecting element and the second interconnect being connected to the second electrical connecting element. Third and fourth electrical connecting elements are disposed on the substrate and the first and second interconnects are disposed between the third and fourth electrical connecting elements and therebetween are at a second distance from one another, the second distance being smaller than the first distance.
Type:
Grant
Filed:
September 15, 2003
Date of Patent:
October 12, 2004
Assignee:
Infineon Technologies AG
Inventors:
Matthias Uwe Lehr, Jens Möckel, Dirk Többen
Abstract: The invention relates to an MRAM configuration that includes a selection transistor connected to several MTJ memory cells. The selection transistor has an increased channel width.
Type:
Grant
Filed:
May 13, 2003
Date of Patent:
October 12, 2004
Assignee:
Infineon Technologies AG
Inventors:
Heinz Hönigschmid, Thomas Böhm, Thomas Röhr
Abstract: A reverse-blocking power semiconductor component includes a drift path subdivided into a source-side area and a drain-side area by a region with opposite doping. Provided above this region is a gate. Alternatively, the body zone of the one conduction type is subdivided into a source-side part and a drain-side part by a region of the other conduction type. This region acts as an electron collector. The reverse-blocking power semiconductor component can be incorporated in compensation components, and power transistors. Methods for producing power semiconductor components are also provided.