Abstract: A cooking device includes a cooking chamber having at least one vapor opening through which the vapor from the cooking chamber, when in operation, conveyed by a conveyor, and at least one opening that can absorb external air, particularly with the aid of the conveyor. The invention also relates to a device that can be used to adjust the amount of external air and a vapor stream from the cooking chamber according to the external air.

Abstract: A method of fabricating semiconductor memory devices is simplified by providing at least some plug regions, which are provided for contacting storage capacitor devices of a capacitor configuration, such that the plug regions have in each case a region that is elevated above the surface region of a passivation region.

Abstract: A semiconductor configuration with an ohmic contact-connection includes a p-conducting semiconductor region made of silicon carbide. A p-type contact region serves for the contact-connection. The p-type contact region is composed of a material containing at least nickel and aluminum. A substantially uniform material composition is present in the entire p-type contact region. A method for contact-connecting p-conducting silicon carbide with a material containing at least nickel and aluminum is also provided. The two components nickel and aluminum are applied simultaneously on the p-conducting semiconductor region.

Abstract: A circuit configuration for the bit-parallel outputting the bits of a data word includes at least two signal lines for feeding the data signals representing the bits of the data word to driver stages and to a reference circuit. Further driver stages are connected in parallel with the driver stages and have inputs connected to the control device. The control device establishes the signal states of the data signals to be transferred on each signal line and generates a control signal depending on the type and number of the signal state changes of bit sequences to be transferred. It is possible to drive the driver stages that assigned to the signal line for which a signal state change is present.

Abstract: An oscillator circuit is specified, having an LC resonator, to which two or more current paths are connected, which are connected in parallel with one another and can be connected and disconnected individually by switches. The attenuation compensation amplifiers are in this case coupled to the resonant circuit in order to compensate for its attenuation. The oscillator circuit allows the gradient of the compensation for the attenuation of the resonant circuit to be adjusted, without moving the operating point of the amplifiers. This makes it possible to compensate for manufacturing-dependent component tolerances and any amplitude discrepancy caused by them, in a simple way. The oscillator circuit is suitable, for example, for use in voltage-controlled oscillators in order to form phase-locked loops when using mass production technologies.

Abstract: A semiconductor device is described in which an integrated circuit executes dummy operating cycles in order to generate heat if the temperature of the semiconductor device drops below a lower limit value. In this manner the semiconductor device can be rated for lower temperatures than the construction tolerances of the semiconductor device would allow.

Abstract: It is known to adapt the dimensions of transistors, in particular a layer thickness of a local gate oxide in a manner dependent on an operating voltage. Therefore, semiconductor circuits having transistors with different operating voltages are provided with transistors having gate oxides of different thicknesses. This allows the gate oxide thickness to be influenced even more extensively. In this case, account is taken of the fact that infrequently addressed transistors, in particular memory transistors given the same gate oxide thickness, have a significantly longer lifetime than frequently switched transistors. An integrated semiconductor circuit having transistors whose gate oxide thicknesses are adapted to the switching frequency having different magnitudes, is proposed.

Abstract: An adjusting device for adjusting a sheet transport cylinder in a sheet-fed rotary printing machine, depending upon various printing-material thicknesses, includes a mounting support for mounting the sheet transport cylinder so that a rotational axis of the sheet transport cylinder is adjustable from a first axial position, which corresponds to a given printing-material thickness, to a second axial position, which corresponds to another printing-material thickness and is axially parallel to the first axial position.

Abstract: A trench power semiconductor component, in particular an IGBT, has an electrode (4) in a trench (3) that is laterally divided into a section (10) that serves as a gate and a section (11) that is connected to the source metallization (6). A method for making the trench power semiconductor component is also included.

Abstract: A method produces a thermoelectric layer structure on a substrate and the thermoelectric layer structure has at least one electrically anisotropically conductive V-VI layer, in particular a (Bi, Sb)2 (Te, Se)3 layer. The V-VI layer is formed by use of a seed layer or by a structure formed in the substrate, and disposed relative to the substrate such that an angle between the direction of the highest conductivity of the V-VI layer and the substrate is greater than 0°. The orientation can also be effected by an electric field. Components are formed of the thermoelectric layer structure in which the angle between the direction of the highest conductivity of the V-VI layer and the substrate is greater than 0°. As a result, the known anisotropy of the V-VI materials can advantageously be used for the construction of components.

Abstract: The invention relates to an electronic component with external connection elements and to a method of electrically connecting and/or fixing an electronic component to a printed-circuit board. For this purpose, the electronic component has capillary elements as external connection elements, which are connected to contact connection areas of a leadframe or to contact areas of a chip. The capillary element protrudes out of the electronic component and has, on its protruding end, a suction opening with capillary action.

Abstract: A magnetic memory configuration stores data and avoids ageing effects. The memory configuration contains a cell array containing magnetic memory cells disposed along a first direction and a second direction crossing the former, a multiplicity of electrical lines along the first direction, and a multiplicity of electrical lines along the second direction. The magnetic memory cells in each case are disposed at crossover points of the electrical lines. A first current supply device supplies respectively selected electrical lines along the first direction with current. A second current supply device supplies respectively selected electrical lines along the second direction with current. The second current supply device is configured for setting the direction of the current in accordance with an information item to be written. The first current supply device is suitable for changing over the direction of the current as desired.

Abstract: In a method for producing ferroelectric strontium bismuth tantalate having the composition SrxBiyTa2O9 (SBT) or SrxBiy(Ta, Nb)2O9 (SBTN), the element strontium, which is normally present in an amount y=2, is provided in excess in a range from 2.1≦y≦3.0. This makes it possible to carry out the heat treatment step for converting the deposited material into the ferroelectric phase at a temperature T1, which is lower than 700° C. In addition, the strontium content x can be reduced from a nominal value of 1 to 0.7.

Abstract: A cache memory serves for accelerating accesses to an external memory of a microprocessor. Instead of an actually occurring hit event, a cache miss is signaled to the microprocessor. The reversal is randomly controlled. This disguises the current profile of cache hit and miss events, which enhances the security against statistical attack techniques based on the evaluation of the current profile.

Abstract: A method of adjusting a quantity of ink supplied to a printing material by a printing machine includes adjusting the quantity of ink as a function of the printing speed and, upon the occurrence of a change in the printing speed, making a change in the quantity of ink as a function of area coverage to be printed; and an adjusting device for performing the method.

Abstract: A folding-box gluing or adhesive-bonding machine for producing folding boxes from blanks includes a folding station for folding parts of the blanks provided with a strip of adhesive. An adjoining transfer station includes at least two pairs of conveyor belts acting as a conveying device, a device for removing faulty folding boxes including a circular knife for cutting in a longitudinal conveying direction of the folding boxes and being lowered and lifted between the conveyor belts into and out of a conveying plane, and a device for laterally withdrawing side parts of the blanks severed by the longitudinal cut. The laterally withdrawing device has a flat rotary table outside and immediately adjacent one of the pairs of conveyor belts, an electric motor and at least two pressure disks. A collecting and pressing device presses the boxes having been folded flat, to set the adhesive.

Abstract: A semiconductor component includes first and second connection zones formed in a semiconductor body, a channel zone surrounding the second connection zone in the semiconductor body, and a drift path that is formed between the channel zone and the first connection zone and contains a compensation zone. The compensation zone has a complementary conduction type with respect to the drift zone and includes at least two segments. A distance between the two adjacent segments is chosen such that the punch-through voltage between these segments lies in a voltage range that corresponds to the voltage range assumed by the voltage drop across the drift path at currents situated between the rated current and twice the rated current.

Abstract: A method and device for measuring voltage of an internal reference voltage source of an integrated semiconductor circuit, in particular, a DRAM, including the steps of comparing a reference voltage to an external comparison voltage with a comparator, forming a measured value for the reference voltage to be set in accordance with a comparison result, switching a commutator by a clock- or software-control to alternatively apply the reference voltage and the comparison voltage to the comparator inputs at the same time, varying one of the reference and comparison voltage to a setpoint voltage value until the comparator output changes its logic value at each commutator switched stage, buffering the voltage values present for each switched state when the logic value changes, forming an average value for the reference voltage from the stored voltage values, and setting the reference voltage as a function of the average value formed.

Abstract: A crystal oscillator circuit has capacitors that govern the resonant circuit and are designed such that they can be connected and disconnected, for frequency adjustment. A respective compensation capacitor is connected opposite and in mirror-image form to these capacitors that govern the resonant circuit. This compensation capacitor influences only the dynamic operating point, but has virtually no effect on the oscillation frequency. In consequence, it is not possible to shift the operating point during adjustment of the oscillation frequency, thus ensuring stability of the oscillating system and operation at the desired operating point.