Abstract: A monolithic random access memory having a plurality of groups of storage cells, each storage cell of each group being adapted to store an electrical manifestation of a binary 1, or an electrical manifestation of a binary 0, a sense latch for each of said groups of storage cells for controllably sensing the binary value 0 or 1 stored in any one of said storage cells included within the group of storage cells with which said sense latch is associated, each of said sense latches comprising: a first field effect transistor directly connected to each cell of a group of said storage cells, second, third, fourth and fifth field effect transistors respectively connected to said first field transistor and to each of the other ones of said second, third, fourth and fifth field effect transistors, means for controlling the conductivity of said first, second, third, fourth and fifth transistors on a selective basis, whereby a binary 1 or a binary 0 may be read from and restored to any predetermined cell in each group.

Abstract: The invention is concerned with methods for producing improved semiconductor devices. The invention is advantageously employable in the fabrication of insulated-gate field-effect transistor devices. The problem of accurately aligning the gate electrode over the channel region, lying between the source region and the drain region of a field effect transistor, is particularly addressed and solved. Accurate and precise field protection of all areas of the field-effect transistor surrounding the channel, source and drain regions is simply and effectively accomplished. The proper alignment of the gate electrode is largely accomplished by utilizing essentially the same mask structure to define the gate, source and drain regions. The same mask structure is utilized to define the area that is field protected.

Abstract: The invention relates to apparatus for the testing of high circuit density devices fabricated by large scale integration techniques. More specifically, the invention is directed to a test fixture used in a test system for determining the merit or electrical integrity of small semiconductor chips, diced from a semiconductor wafer having a large number of chips. Each chip being a high circuit density device, e.g., a small monolithic semiconductor structure having a large number of closely spaced circuits thereon and therein.

Abstract: A novel solid state device which exhibits two-terminal negative resistance characteristics. The negative resistance characteristic may be readily shaped by external bias control, providing a wide range of oscillatory or bistable properties. The negative resistance characteristic is obtained by a novel means of device operation exploiting an electron hole pair multiplication effect which is enhanced by high substrate doping in conjunction with appropriate biasing of the junctions within the device.The device exhibits a bias voltage controlled small signal negative resistance region, i.e., the device has a unique feature, a negative slope over an adjustable portion of its V-I characteristic. Bistable action is obtained with a single device. In the first stable state ("off") of the device, power dissipation is zero. In the second stable state ("on") of the device, power dissipation is adjustable to less than one micro-watt.

Abstract: A programmable interface contactor structure including a plurality of discrete electrical probes geometrically arranged, or oriented, to respectively electrically contact a discrete one of an array of conductive pads on a device under test. The plurality of discrete probes are contained and supported within a structure having a generally planar exposed upper surface where one end portion of each of said plurality of probes is electrically connected to a single conductive pad contained within an array of pads on said planar surface of the probe assembly. The contactor structure further includes a space transformer having a generally cylindrical overall configuration.

Abstract: A ceramic green sheet material is metallized by laminating a thin organic material, preferably MYLAR, to a ceramic green sheet surface, and then employing an electron beam to define a predetermined pattern of openings extending through the organic material and selectively into and through the green sheet. The resulting channels and via holes are then filled with a metal paste. The organic mask is removed by peeling subsequent to the metal paste deposition step.

Abstract: The disclosure is an improved Random Access Memory (RAM) integrated circuit chip. More specifically, enhancement - depletion mode field effect transistor technology is employed to provide a solid state memory having improved "reading" and "writing" capability.A pair of N-channel depletion mode devices are used to initialize the bit lines before the start of the next read or write cycle. These devices are switched to a high conductive state resulting in a rapid initialization of the bit lines. A sense latch circuit incorporating enhancement and depletion mode devices is used to detect and latch a small differential signal on the bit lines. The state of the sense latch is isolated from and does not affect the bit line voltages at any time during the memory cycle. M pairs of N-channel depletion mode devices are provided. One pair for each of B/S lines. M sense latch circuits are provided. One for each pair of B/S lines.