Patents Represented by Attorney Wilfred G. Caldwell
  • Patent number: 5529671
    Abstract: The invention uses an ion beam to polish a rotatable substrate from an oblique angle between the horizontal and the center line of the gun to the substrate to upgrade the quality of substrates. Alternatively, the substrates are left in the high vacuum chamber without breaking the vacuum for in-situ deposition of thin films thereby avoiding contamination, and to provide premium optics. A wobble stick arrangement is provided to align the ellipsometer reflected beam with the ellipsometer detector during operation without breaking the vacuum which, if broken, would admit contamination.
    Type: Grant
    Filed: July 27, 1994
    Date of Patent: June 25, 1996
    Assignee: Litton Systems, Inc.
    Inventors: William P. Debley, John G. Larson
  • Patent number: 5519184
    Abstract: The reusable welded hermetic enclosure and method provides a laser weld between a cover and a chassis to form an enclosure or a laser weld between two parts to form a hermetic seal. In either event, one part has an open mouth with a sloped or tapered external section surrounding the mouth to receive the larger mouth of the other part. The mouth of the other part is sloped or tapered to conform to the sloped or tapered external section of the first part. The parts are pressed together for an interference fit to eliminate gaps and the laser weld connects the sloped or tapered sections. When the materials to be welded are of low silicon content aluminum, it is necessary to include a filler ring of an aluminum-silicon alloy containing a predetermined silicon content between the sloped or tapered sections. The cover and the chassis are reusable after opening. The filler ring is sacrificed during the removal of the cover.
    Type: Grant
    Filed: May 20, 1994
    Date of Patent: May 21, 1996
    Assignee: Litton Systems, Inc.
    Inventor: Michael P. Umlas
  • Patent number: 5505219
    Abstract: Fluid cleaning apparatus for precision parts, comprising in combination, a chamber, having a fluid inlet and a fluid outlet, for holding parts to be cleaned and a fluid tight recirculating flow system including the chamber. The fluid tight system directs supercritical carbon dioxide fluid flow across the parts being cleaned. A fluid recirculating cylinder has a first fluid port and a second fluid port connected in the flow system. A fluid piston is in the cylinder between said ports. A pneumatic cylinder has a further piston between a first pneumatic port and a second pneumatic port. A driving member is connected between the pistons for reciprocal movement caused by air from a source alternately introduced to the pneumatic ports to cause the fluid piston to pump fluid through the chamber and back to the recirculating cylinder. A shuttle valve is connected between the air source and the pneumatic ports.
    Type: Grant
    Filed: November 23, 1994
    Date of Patent: April 9, 1996
    Assignee: Litton Systems, Inc.
    Inventors: Don D. Lansberry, Thomas G. Council
  • Patent number: 5486916
    Abstract: Apparatus and methods for detecting when the birefringent axes of two polarization preserving fibers have their ends oriented into a position to locate the respective axes at 45 degrees. A fusion splicer and a heating controller for the fiber sensing coil are added to a reciprocal interferometer to produce a predetermined pattern of percent light intensity versus time in the returned light, when the axes are properly aligned for fusing. A computer may control the automatic making of depolarizers by this invention.
    Type: Grant
    Filed: July 29, 1994
    Date of Patent: January 23, 1996
    Assignee: Litton Systems, Inc.
    Inventors: Ronald J. Michal, James R. Steele, Mark E. Jones
  • Patent number: 5430574
    Abstract: The rugged filter/switch cavity includes at least a two section low thermal expansion glass tubular frame, each section with a highly polished edge for abutting engagement and rigid gripping by electrostatic attraction to maintain the cavity integrity. Each frame section supports a multi-layer low loss thin film mirror in opposing relation to define the cavity gap. One mirror is fixed in the first section and the other mirror is carried by a diaphragm portion of the other section for axial movement toward and away from the first mirror to tune the cavity to different frequencies. Coaxially aligned optical fibers, affixed to each section by flexible epoxy, guide light from a broadband source including, one or more signals, into the first section, through the first mirror and back and forth between mirrors until the cavity is resonant to a signal to be selected which signal then exits the cavity via the second mirror and the other optical fiber.
    Type: Grant
    Filed: July 25, 1994
    Date of Patent: July 4, 1995
    Assignee: Litton Systems, Inc.
    Inventor: Mohammad M. Tehrani
  • Patent number: 5247515
    Abstract: The present invention provides a highly efficient, high speed, and low power method and apparatus for extraction of a single signal from a set of frequency division multiplexed (FDM) signals. The apparatus operates on an analytical digital FDM-type group of signals to decompose the overall signal spectrum by octaves until a single signal or channel is selected. The signal selection is accomplished by transferring received FDM signals into a bandsplitting filter where the spectrum is divided into an upper and lower half-band spectrum. The upper half-band is complex shifted into the lower haIf-band and one half-band eliminated from further consideration. The selected half-band is decimated by a factor of two and recirculated through the filter where it is repetitively half-band filtered, complex shifted, and decimated until a desired single channel remains. The signal data from one processing pass is interleaved with data from previous passes to increase processing efficiency and speed.
    Type: Grant
    Filed: January 28, 1991
    Date of Patent: September 21, 1993
    Assignee: Rockwell International Corporation
    Inventor: Stanley A. White
  • Patent number: 5235930
    Abstract: The invention is a Self Propelled Underwater Device With Steerable Fin Stabilizer having a unique hull of generally tubular configuration and having a substantially conical shaped rear portion. The hull comprises a plurality of hollow interlocking tubular sections with one section including the rear portion; adjacent tubular hull sections include peripherally spaced apart threaded portions respectively disposed internally and externally thereof for mating relationship upon relative circumferential motion of the adjacent sections, the adjacent sections are further configured to provide an abutting joint when fully mated with watertight sealing means between the mated sections. The vehicle includes a plurality of steerable stabilization fins mounted on the hull about the rear conical portion at spaced apart locations with hull slots for receiving the respective fins when stowed.
    Type: Grant
    Filed: May 8, 1992
    Date of Patent: August 17, 1993
    Assignee: Rockwell International Corporation
    Inventor: Ronald C. Pendleton
  • Patent number: 5225964
    Abstract: A plurality of heat sinks assembled to form a rack in a lightweight housing accommodate printed circuit cards between the heat sinks and circulate cooling oil through the heat sinks to drain the test heat from the boards quickly. Each heat sink uses a porous metal foamed core, configured in zigzag shape, to provide a tortuous path for the fluid flow which extends into lateral fins comprising the side plates of the porous metal foam for receiving the cards or ground plates therefore. These plates are clamped against the fins for close contact to the cooling fluid thereby shortening the heat flow path. Brazed on aluminum top and bottom cover plates make a fluid tight connection with the porous foamed metal. The brazed on top and bottom plates are also configured in the zigzag pattern of the porous foamed metal.
    Type: Grant
    Filed: October 31, 1991
    Date of Patent: July 6, 1993
    Assignee: Rockwell International Corporation
    Inventor: Les E. Nemes
  • Patent number: 5219713
    Abstract: The method of constructing an air bridge on a substrate between spaced apart conductors on the substrate with the bridge spanning the distance between the conductors, by using PMGI to build a bridge pad on the substrate; using PMMA to build a bridge pattern over the pad with the ends of said conductors extending into said pattern; depositing titanium and gold over said pad within said pattern by directing the titanium and gold into said pattern onto said pad and conductor ends using relative motion between the substrate and the titanium and gold; and removing the PMGI and PMMA.
    Type: Grant
    Filed: December 17, 1990
    Date of Patent: June 15, 1993
    Assignee: Rockwell International Corporation
    Inventor: Gerald D. Robinson
  • Patent number: 5214261
    Abstract: Method and apparatus for using deep ultraviolet excimer laser beams to dice semiconductor substrates, such as sapphire, with or without integrated circuitry, by establishing guided relative motion between the beam and the substrate to achieve ablative photodecomposition with the angle between the beam and the substrate being approximately five (5) degrees out of normal.
    Type: Grant
    Filed: November 13, 1991
    Date of Patent: May 25, 1993
    Assignee: Rockwell International Corporation
    Inventor: Pierino I. Zappella
  • Patent number: 5202283
    Abstract: Method for organic free radical, including aliphatic radical, transport of dopant species for precise, predetermined, and reproducible doping concentrations to control electrical properties for chemical vapor deposition grown materials.
    Type: Grant
    Filed: February 19, 1991
    Date of Patent: April 13, 1993
    Assignee: Rockwell International Corporation
    Inventors: Charles R. Younger, Kenneth L. Hess, Stuart J. C. Irvine, Edward R. Gertner, Shawn L. Johnston
  • Patent number: 5185274
    Abstract: Heterojunction bipolar transistor is formed by using a common photoresist mask for self-aligning all critical dimensions including emitter and emitter contact to base contact to proton damaged collector regions beneath base contact and to passivate emitter periphery at same time.
    Type: Grant
    Filed: August 15, 1991
    Date of Patent: February 9, 1993
    Assignee: Rockwell International Corporation
    Inventors: Mau C. F. Chang, Peter M. Asbeck
  • Patent number: 5175605
    Abstract: The present invention provides a unique circuit and layout methods for improving upon series redundant circuits. A substitution device, comprising a pair of series connected N or P FETs for respective single FETs, can be further hardened or enhanced against cosmic rays, particles, etc. by spacing the P FETs a predetermined distance apart so that an ion or other particle cannot strike or affect both channels simultaneously, thus avoiding upset. When these devices are placed in cells (i.e., ASIC) in logic or the like circuits, the predetermined spacing is related to cell height. Also, alignment of the gates of the substitution device on a common axis minimizes the window of a satellite through which a particle could effectively strike the common gate axis possibly to upset both gates.
    Type: Grant
    Filed: February 5, 1990
    Date of Patent: December 29, 1992
    Assignee: Rockwell International Corporation
    Inventors: James A. Pavlu, Gary L. Heimbigner
  • Patent number: 5157876
    Abstract: In the present invention STRESS-FREE CHEMO-MECHANICAL POLISHING AGENT FOR II-VI COMPOUND SEMICONDUCTOR SINGLE CRYSTALS AND METHOD OF POLISHING, a II-VI compound semiconductor single crystal wafer is polished smooth to within 50 angstroms by using a mixture of water, colloidal silica and bleach including sodium hypochlorite applied under time and pressure control to achieve chemo-mechanical polishing. Many such compound crystals are not susceptible to polishing by prior art methods.
    Type: Grant
    Filed: November 4, 1991
    Date of Patent: October 27, 1992
    Assignee: Rockwell International Corporation
    Inventor: Daniel Medellin
  • Patent number: 5151389
    Abstract: Method and apparatus for using deep ultraviolet excimer laser beams to dice semiconductor substrates, such as sapphire, with or without integrated circuitry, by establishing guided relative motion between the beam and the substrate to achieve ablative photodecomposition with the angle between the beam and the substrate being approximately five (5) degrees out of normal.
    Type: Grant
    Filed: September 10, 1990
    Date of Patent: September 29, 1992
    Assignee: Rockwell International Corporation
    Inventor: Pierino I. Zappella
  • Patent number: 5147740
    Abstract: A mask and lithographic process is disclosed for the formation of conductive patterns on substrates, particularly in connection with the formation of high electron mobility transistors (HEMT) and metal-semiconductor field effect transistors (MESFET). The technique allows the formation of sub-half micron conductive patterns on semiconductor substrates using optical lithography and a multilayer portable conformable mask. The method includes the application of optical contact lithography to a conventional photoresist followed by a deep UV flood exposure of an underlying multilayer PMGI portion. Metal is deposited on a semiconductor substrate through the mask formed by the photoresist and PMGI layers to produce sub-half micron conductive patterns.
    Type: Grant
    Filed: August 9, 1990
    Date of Patent: September 15, 1992
    Assignee: Rockwell International Corporation
    Inventor: Gerald D. Robinson
  • Patent number: 5137544
    Abstract: In the present invention Stress-Free Chemo-Mechanical Polishing Agent For II-VI Compound Semiconductor Single Crystals And Method Of Polishing, a II-VI compound semiconductor single crystal wafer is polished smooth to within 50 angstroms by using a mixture of water, colloidal silica and bleach including sodium hypochlorite applied under time and pressure control to achieve chemo-mechanical polishing. Many such compound crystals are not susceptible to polishing by prior art methods.
    Type: Grant
    Filed: April 10, 1990
    Date of Patent: August 11, 1992
    Assignee: Rockwell International Corporation
    Inventor: Daniel Medellin
  • Patent number: 5124578
    Abstract: A high voltage level input protection, high capacitance output IC clock receiver uses a ratioed CMOS buffer for the output drive and the receiver includes a low resistance input circuit having a pair of series connected large area input diodes physically located beneath the pad in an input network including a pair of gate controlled diodes in parallel therewith and a low value input resistor connected between the pad diodes and the gate controlled diodes. An N+ resistor receives the CMOS level output on a large metal bus from which metal interconnects fan-out to apply the clock signal to a plurality of loads in synchronism with diminished delay and increased reliability. Thus, reducing the resistance required in the input protection circuit improves the synchronism.
    Type: Grant
    Filed: October 1, 1990
    Date of Patent: June 23, 1992
    Assignee: Rockwell International Corporation
    Inventors: Eugene R. Worley, Howard K. Lane, Winston W. Walker
  • Patent number: 5114874
    Abstract: The sub-micron NMOS, PMOS and CMOS devices with methods for forming sub-micron contacts provide sub-micron devices and processes for manufacturing them with contacts down to 0.1 microns or less. All processes and devices utilize doped polysilicon as the electrodes for the device elements, and the preferred embodiment surrounds the polysilicon contacts with low temperature oxide covered by SOG which avoids all oxidation steps that could be detrimental in this contact size range. An optional alternative includes large contact area enlarging layers of silicide directly beneath each contact.
    Type: Grant
    Filed: May 30, 1990
    Date of Patent: May 19, 1992
    Assignee: Rockwell International Corporation
    Inventor: Frank Z. Custode
  • Patent number: 5114867
    Abstract: The sub-micron bipolar devices with method for forming sub-micron contacts provides a sub-micron bipolar device and process for manufacturing it with contacts down to 0.1 microns or less. All processes and devices utilize doped polysilicon as the electrodes for the device elements, and the preferred embodiment surrounds the polysilicon contacts with low temperature oxide covered by SOG to avoid all oxidation steps which otherwise might be detrimental to the extremely thin whisker contacts.
    Type: Grant
    Filed: September 17, 1990
    Date of Patent: May 19, 1992
    Assignee: Rockwell International Corporation
    Inventor: Frank Z. Custode