Abstract: An infrared laser structure is stacked on top of a red laser structure with both having an inverted or p-side down orientation. The red/infrared stack laser structure is inverted and wafer fused to a blue laser structure to form a red/infrared/blue monolithic laser structure. The top semiconductor layer of the inverted red/infrared stack laser structure is a GaInP fusion bonding layer which will be wafer fused to the top semiconductor layer of the blue laser structure which is a GaN cladding/contact layer.

Abstract: A first, thicker, annular gallium arsenide semiconductor layer surrounds a second, thinner, circular gallium arsenide semiconductor layer in a vertical cavity surface emitting laser. The thinner circular gallium arsenide layer defines the output window for the laser cavity which matches the TEM.sub.00 fundamental mode of the light beam emitted by the active region of the VCSEL. The thicker annular gallium arsenide layer outside the output window of the thinner circular gallium arsenide layer provides modal reflectivity discrimination against high order transverse modes of the light beam emitted by the active region of the VCSEL.

Abstract: This invention relates to a multiple wavelength laser structure, and more particularly, to a multiple wavelength laser array structure fabricated by flip-chip bonding from laser structures on two different substrates. A side by side red/IR laser structure is flip-chip bonded to a blue laser structure to form a red/blue/IR hybrid integrated laser structure.

Abstract: A single pass ROS system provides a plurality of latent images which may subsequently be developed in different colors. A method and apparatus is provided for aligning ROS units in a single pass printing system, so that each ROS unit is aligned along the process or X-axis. After this alignment, the images formed by each ROS unit will be in proper registration within the prescribed tolerances. A signal in a closed feedback loop regulates the angular velocity and phase of the rotating polygon mirror of the first ROS unit. The same signal is also the reference signal to the feedback loops of the other rotating polygon mirrors of the other ROS units to synchronize all of the rotating polygon mirrors. The position of the scan lines formed by their respective ROS units are fixed relative to one another and thus, lacking any other error sources, are registered in the process direction.

Abstract: A dual infrared beam raster scanning system has overfilled facets on the rotating polygon mirror and a double pass through a two cylindrical lens element f-theta lens group. The raster scanning system has an aspheric collimator lens, an aperture and a four lens element cylindrical lens group in the pre-polygon optics, and a two cylindrical lens element f-theta lens group and a cylindrical wobble correction mirror in the post-polygon mirror optics.

Abstract: An an infrared laser structure has an inverted or p-side down orientation. The infrared laser structure is inverted and wafer fused to a blue laser structure to form an infrared/blue monolithic laser structure. The top semiconductor layer of the inverted infrared stack laser structure is a GaInP fusion bonding layer which will be wafer fused to the top semiconductor layer of the blue laser structure which is a GaN cladding/contact layer.

Abstract: An aperture and a field lens are positioned between the collimator and the rotating polygon mirror of a multiple reflection, multiple beam raster output scanner to eliminate differential scan line bow. The aperture and the field lens will be positioned where the multiple beams cross the optical axis of the raster output scanner optical system. The multiple beams are telecentric.

Abstract: A dual infrared beam raster scanning system has overfilled facets on the rotating polygon mirror and a double pass through a two cylindrical lens element f-theta lens group. The raster scanning system has an aspheric collimator lens, an aperture and a four lens element cylindrical lens group in the pre-polygon optics, and a two cylindrical lens element f-theta lens group and a cylindrical mirror and a cylindrical wobble correction mirror in the post-polygon mirror optics.

Abstract: A monolithic laser structure has an infrared laser structure side by side with a red laser structure. The infrared and red laser structures share the same substrate and have the same material for the cladding layers and for the cap and barrier reduction layers. The red and infrared laser structures can have native oxide confined or metal confined ridge waveguides.

Abstract: The present invention provides a high density, edge emitting laser array structure formed by a wet oxidation process. Native oxide layers formed in adjacent grooves in the p-cladding layer Al-based alloy of the laser array structure provide both optical confinement to achieve single transverse mode operation and for electrical isolation to allow each laser diode to be independently addressable.

Abstract: A ridge waveguide semiconductor laser structure fabricated by etching and wet oxidation. The upper cladding layer is partially etched forming a ridge and a native oxide layer is wet oxidized from the remaining upper cladding layer and the active region outside the ridge. The deep native oxide layer provides strong optical confinement to the ridge waveguide. Alternately, the active region can be narrower than the ridge waveguide in the laser structure. The ridge waveguide semiconductor laser structures with native oxide layers can also be curved geometry lasers such as ring lasers.

Abstract: A monolithic laser structure has an infrared laser structure stacked on top of a red laser structure. An ion implantation channel from the substrate of the infrared laser structure to the lower cladding layer of the red laser structure lets both laser structures use a common electrode on the substrate of the red laser structure. A portion of the monolithic structure is etched down to the red laser structure for the electrode of the red laser structure. The monolithic laser structure has a red and infrared side by side array from the two stacked red and infrared laser structures. The red and infrared laser structures can each have native oxide confined ridge waveguides.

Abstract: A time division multiplexed laser emits two beams of the same wavelength but orthogonal polarization or two beams of different wavelengths from a single laser source for use in a multiple beam raster output scanning system. The multiple beam raster output scanning is obtained from a single raster scanning system (ROS) with a rotating mirror, beneficially a polygon mirror, and a single set of scan optics for use in single or multiple station printers. A plurality of the coaxially overlapping laser beams from the same laser source are deflected using a common mirror surface area and laser beams containing different channels of data signals are subsequently separated by a plurality of dynamic and static beam separators based on polarization or wavelength. The channels of the separated laser beams are directed onto associated photoreceptors.

Abstract: A thin film organic light emitting diode with edge emitter waveguide comprises, in sequence, a substrate, a waveguide, an anode, a hole transport layer, an electroluminescent layer, an electron injection layer and a cathode. Voltage applied between the anode and cathode causes the electroluminescent layer to emit light through the hole transport layer and the anode into the waveguide where the light is internally reflected within the waveguide and propagates through the length of the waveguide to be emitted through the edge of the waveguide. The electron injection layer also functions as a cladding layer to increase the efficiency of the waveguide. The non-emission edge of the waveguide may be sloped with a conductor layer to the anode and a conductor layer to the cathode forming a reflective surface to the non-emission edge.

Abstract: A binary diffractive optical element is used as a single element beam homogenizer. The phase profile of the binary surface relief phase grating structure of the binary diffractive optical element will reprofile diffractively a spatially non-uniform intensity profile of a light beam into multiple overlapping beams which recombine to form a light beam with a more uniform intensity profile.

Abstract: An F-theta scan lens for a dual beam, dual wavelength raster output scanning system (ROS) has four lens elements with the third and fourth lenses forming a doublet having a negative refractive power. This four-element F-theta scan lens corrects for axial chromatic aberration and lateral chromatic aberration for both wavelengths and provides scan linearity.

Abstract: A multiple wavelength surface emitting laser has a first and second broad bandwidth distributed Bragg reflector (DBR) which reflect light at multiple wavelengths. The surface emitting laser structure comprises at least two cavities with each cavity containing one or more active layers for respectively emitting light at different wavelengths. In a preferred embodiment for a dual wavelength surface emitting laser, a first cavity contains a first active layer for emitting light of a first wavelength and a second cavity contains the first and second active layers and emits only light of the second longer wavelength. The second layer has been eliminated in the first cavity by etching before completing the epitaxial growth.

Abstract: A color printer uses multiple linear arrays of surface emitting lasers of differing wavelengths and polarization states to simultaneously expose widely separated positions on the same or different photoreceptors. Each array is imaged by the same optical system to the photoreceptor. The multiple linear arrays can be closely spaced in a monolithic structure.

Abstract: A three layer dielectric material coating of silicon dioxide/zinc selenide/silicon dioxide is deposited on the reflective surface of the facets of a rotating polygon mirror to provide a uniform intensity of a reflected beam over a wide range of angles of incidence and a wide range of beam wavelengths.

Abstract: A red laser structure has an inverted or p-side down orientation. The red laser structure is inverted and wafer fused to a blue laser structure to form a red/blue monolithic integrated laser structure. The top semiconductor layer of the inverted red laser structure is a GaInP fusion bonding layer which will be wafer fused to the top semiconductor layer of the blue laser structure which is a GaN cladding/contact layer.