Abstract: In order to minimize the time consuming testing of large (e.g., 4 mega-bit) memory units, the units can be designed with alternate test mechanisms incorporated therein. The design for testability (DFT) techniques used in dynamic random access memories to reduce the time required testing use parallel read/write procedures and similar techniques. The technique of the present invention compares actual data signal output with an expected data signal in parallel resulting in a faster determination of the memory status. The additional apparatus is incorporated in the memory unit in the vicinity of the group of storage cells under test. By appropriate selection of the location and function of the apparatus, the test apparatus can result in a smaller chip size, faster processing operation, and lower power consumption. The DFT technique reduces the time for testing by incorporating parallel read/write procedures along with additional test procedures.

Abstract: A dual-port memory having an on-chip color register for storage of input data for use in multiple write cycles is disclosed. The color register is written to during a special cycle, which is enabled by a special function pin in conjunction with the write enable and transfer enable function pins, each of which have their logic state latched in during the row address strobe signal. A second type of special cycle causes a multiplexer to select the contents of the color register, rather than the latched data state of the data input terminals, for the data to be written to the selected memory cells. The use of the color register may be used in conjunction with a mask register, where the writing of certain input/outputs is inhibited. In addition, a block write feature may be incorporated with the color register so that, in another type of special cycle, multiple columns per input/output can be simultaneously written with the contents of the color register.

Abstract: A voltage level detection circuit is disclosed. The circuit is incorporated into a dynamic memory, integrated onto a single semiconductor substrate to which external voltage and reference potentials are applied. The dynamic memory contains an array of memory cells and circuitry for writing and reading information into and from the cells of the array. It contains an oscillator for generating an oscillator signal when the external voltage is above the reference potential. The voltage level detection circuitry is controlled by the oscillator signal, for controlling a voltage obtained from the external voltage, to the reading and writing circuitry and to the array to prevent the voltage from being applied unless the voltage is a lease of a predetermined minimum value. It may contain a circuit for sampling the obtained voltage during selected oscillator cycles to determine whether the obtained voltage is above the predetermined value. Other elements may be added to further enhance performance of the circuit.

Abstract: The secondary power supply Vbb which powers components on a semiconductor device receives power from a distributed primary power supply Vbb. During the power-up portion for the secondary power supply Vbb, a main driver amplifier 13 provides the power. After the secondary power supply Vbb has reached the desired voltage level, a standby driver amplifier 14 is used to maintain the desired voltage level. In the present invention, the main driver amplifier 13 is activated by a time base unit 21, 22 time in response activation of the primary power supply. The time base unit 21, 22 can simultaneously inactivate the standby driver amplifier 14, or the standby power supply can operate independently of the main driver amplifier 13. After a time interval sufficient to insure that the output from the secondary power supply has reached the desired voltage level, the main driver amplifier 13 is inactivated and the standby (i.e., lower power) amplifier provides the steady state power.

Abstract: The invention discloses a high density semiconductor package. Two semiconductor chips are each affixed on a corresponding one of two lead frames. The semiconductor chips and the lead frames are encapsulated, wherein only a portion of the leads of the lead frames protrudes and extends from the package.

Abstract: In a DRAM unit in which the substrate bias voltage is maintained within predetermined limits by a of voltage detectors and a charge pump, a third voltage detector is provided which detects a intermediate substrate bias voltage level that is within the voltage range identified by the pair of voltage detectors. When the third voltage level detects that the intermediate substrate bias voltage has been traversed, the charge pump is activated at a reduced level to drive the substrate bias voltage to recross the intermediate substrate bias voltage level. This technique permits the DRAM unit to operate in a stand-by mode at a lower power level, especially in a standby mode of operation, than when the substrate bias voltage is maintained only by the two voltage limit detectors and a single power level charge pump.

Abstract: In order to select between normal memory components and redundant memory components in an integrated circuit memory device, a logic signal (ENABLE/DISABLE) indicative of the requirement to access the normal memory components or to access the redundant memory components is generated in response to an applied address signal group. When the logic signal has a first logic state, power from dynamic power distribution unit (35) is applied to the output stages (32) of the column addressing apparatus (11,32) activating the normal column conducting paths and power is withheld from the output stages (37) which would otherwise activate the redundant column conducting paths. When the logic signal (ENABLE/DISABLE) has a second logic state, power is applied to the output stages 37 activating the redundant column conducting paths and withheld from the output stages 32 which would otherwise activate the normal column conducting paths.

Abstract: In order to facilitate the fabrication of wiring layers in integrated circuit devices, the conductive path interconnections between areas of conduction on three layers, the three layers being separated by insulating layers, of the integrated circuit are fabricated during the same sequence of operations. The regions of conduction can be associated with the surface of a semiconductor substrate along with associated components fabricated thereon and two wiring layers, or the regions of conduction can be associated with three wiring layers. After the second insulating layer is formed, but before the formation of the final conductive layer, holes are created, a portion of the holes extending through the second insulating region to the prior wiring layer and a portion of the holes extending through the second insulting layer and through the first insulating layer to a semiconductor substrate or to an initial wiring layer.

Abstract: A buffer circuit for converting logic signals generated by apparatus implemented in a TTL technology to logic signals processed by apparatus implemented by the CMOS technology includes an input stage (10, 11, 12, 13, 17), a voltage-control (14, 15) stage for causing the buffer circuit to vary the input voltage level required to switch the state of the buffer circuit output signal, and a hysteresis stage (16) for causing the switching of the output signal level to be different for the rising and falling edges of the input signal. The voltage-control stage (14, 15) provides a improvement in the noise margin of both the VTTL(High) switching level and the VTTL(Low) switching level.

Abstract: In a semiconductor device having conductive paths for electrically coupling a substrate surface with a second conductive/wiring layer, the substrate and the second conductive layer having a first conductive layer therebetween, a second insulating layer separating the first and the second conductive/wiring layers is replaced by a process for forming a protective covering over the patterned and etched first conductive layer. The second conductive layer will provide an electrical contact with the exposed conducting material in the contact holes without the critical patterning and etching process steps typically required when the second insulating layer is formed.

Abstract: The invention discloses a semiconductor package having two rows of interdigitated leads. The two rows of leads (14, 16) are affixed on and extend from one side of the semiconductor package (10). The two rows of leads (14, 16) are interdigitated with each other in a non-contacting manner. The end portions of the leads (17) are further shaped to form a contact surface for soldering to electrical conductors on a printed circuit board.

Abstract: A dual-port memory having an on-chip color register for storage of input data for use in multiple write cycles is disclosed. The color register is written to during a special cycle, which is enabled by a special function pin in conjunction with the write enable and transfer enable function pins, each of which have their logic state latched in during the row address strobe signal. A second type of special cycle causes a multiplexer to select the contents of the color register, rather than the latched data state of the data input terminals, for the data to be written to the selected memory cells. The use of the color register may be used in conjunction with a mask register, where the writing of certain input/outputs is inhibited. In addition, a block write feature may be incorporated with the color register so that, in another type of special cycle, multiple columns per input/output can be simultaneously written with the contents of the color register.

Abstract: Distributed buffering memory device (10) is provided which includes memory circuitry (12) located therein and independent buffering circuitry (16). Device (10) can be used in an array of devices where buffering circuitry (16) is employed to buffer the signals necessary for the array. Each independent buffer is employed to buffer a signal and supply that signal to a bank unique input bus which is used to drive the inputs of the array.

Abstract: In an address transition detection summing circuit, the varying address signal pulse widths can result in output signals from the address transition detection summing circuit which can compromise the performance of the associated memory circuitry. A parallel signal delay path, activated by the leading edge of the address signal, is incorporated in the address transition detection summing circuit and a logic ANDing element so that not only is the signal resulting from the trailing edge of the address signal applied to the logic ANDing element, but the trailing edge signal from the parallel signal delay path must be applied to the logic ANDing element before the trailing edge of the output pulse from the address transition detection summing circuit is generated. In the manner, an address transition always results in an output signal pulse having a preselected minimum width.

Abstract: A method of aligning layers in an integrated circuit device includes associating an alignment target (10, 50) with each layer. Each alignment target (10, 50) has multiple edges created through a boxed frame configuration (16, 18). During semiconductor device fabrication, each alignment target (10, 50) is formed into an alignment structure (200) on the semiconductor wafer. For correspondingly aligned layers, one alignment target of one layer falls within the alignment target of a correspondingly aligned layer within the alignment structure (200). The edges of each alignment target (10, 50) are scanned to determine a center point for each alignment target (10, 50). The layers of the corresponding alignment targets (10, 50) are aligned if the center points calculated from the scanning process performed on the edges of each alignment target coincide along x-axis and y-axis planes.

Abstract: A hybrid leadframe-over-chip (LOC) semiconductor package is generally comprised of bonding finger elements located over a surface of a semiconductor component and electrically coupled, by means of conducting wires, to the bonding pads located on the surface. In addition, at least one bonding finger is located outside the boundary of the surface of the semiconductor component. Each bonding finger located outside the boundary is coupled, by a conducting wire, to a bonding pad positioned within the boundary of the semiconductor component. In this manner, for a given semiconductor component size and for given routing and lead dimension constraints, a larger number of conducting paths can be provided between the leadframe and the semiconductor component.

Abstract: An electronic circuit card has a metal case including top and bottom surfaces connected by first and second sidewalls and a rear wall. The case has an interior chamber and an opening at one end. A substrate is positioned in the interior chamber and a connector attached to the substrate and case so as to cover the opening. A metal spring is attached to the substrate in contact with a ground conductor on the substrate. The spring contacts the top and bottom surfaces of the case to support the substrate and to couple the case to the ground conductor. The case provides protection from electrostatic discharge and radio frequency interference and is capable of receiving substrates having different sizes or shapes or different arrangements of mounted electronic components.

Abstract: The present invention provides a modular electronic component (10) wherein a sequence: of leads (26) of a lead frame (12) differs from a sequence of bonding pads (16) on an integrated circuit (14). When lead frame (12) is placed adjacent integrated circuit (14), first and second power buses (22) and (24) are disposed on a first side (18) of bonding pads (16). First portion (30) of leads (26) and lead finger (28) are disposed on second side (20) of bonding pads (16). Bonding members (42) couple appropriate bonding pads (16) with corresponding leads (26), first and second power buses (22) and (24), and lead finger (28). In this manner, the pin out of modular electronic component (10) may be altered by incorporating appropriate lead fingers (28) without changing the sequence of bonding pads (16).

Abstract: In a lead on chip, LOC, integrated circuit packaging arrangement, the conductors terminate in fingers that receive the bond wires. Adjacent the fingers, the conductors have arm parts extending over the major face of the integrated circuit. These arm parts are formed by stamping, rolling or otherwise to present an upwardly opening channel with at least the bottom lateral margins of the arm part raised above the plane of the bottom surface of the arm part. This reduces sagging of the arm part and capacitive interaction with the integrated circuit.

Abstract: An address transition detector stores a first output signal on an output terminal for a first predetermined period of time in response to an initial edge of an internal address signal pulse. The address transition detector stores a second output signal on the output terminal for a second predetermined period of time in response to the trailing edge of the internal address signal pulse. When the trailing edge of the internal address signal pulse is delayed from the leading edge of the internal address signal pulse by an amount greater than the first predetermined period, then output signal consists of two pulses. When the trailing edge of the internal address signal pulse is delayed from the leading edge by a time less than the first predetermined period, then the signal on the output terminal is a single expanded signal. Typically, the first and second predetermined periods are equal.