Abstract: A method sensing at least two physiological parameters and, for each of the at least two physiological parameters, generating a first series of signals representative of the physiological parameter sensed over a first time period, storing each of said first series of signals as a time sequence data stream, and determining when a physiological event has occurred in a patient. The method further comprises analyzing each of said time sequence data streams for a predetermined time interval preceding the occurrence of a physiological event to determine at least one marker as a predictor of the event, and again sensing the physiological parameters. Furthermore, the method comprises generating a second series of signals representative of the physiological parameter sensed, analyzing each of the second series of signals to determine whether the marker is present, and stimulating a cranial nerve when the marker is present in the second series of signals.

Abstract: A method for monitoring a Christmas tree assembly installed on a subsea hydrocarbon well includes receiving a plurality of parameters associated with the Christmas tree assembly. A health metric for the Christmas tree assembly is determined based on the parameters. A problem condition with the Christmas tree assembly is identified based on the determined health metric.

Abstract: A computer-implemented method and apparatus for programming a computing apparatus are disclosed. The method is a computer-implemented method for use in a computer programming environment, and comprises invoking a script; and determining an execution order for the invoked script predicated on the passing of parameters between scripted actions. The apparatus, in a first aspect, includes a program storage medium encoded with instructions that, when executed by a processor, performs the method. In a second aspect, the apparatus includes a computing apparatus programmed to perform the method.

Abstract: By locally adapting the size and/or density of a contact structure, for instance, within individual transistors or in a more global manner, the overall performance of advanced semiconductor devices may be increased. Hence, the mutual interaction between the contact structure and local device characteristics may be taken into consideration. On the other hand, a high degree of compatibility with conventional process strategies may be maintained.

Abstract: A method, apparatus, and a system for prioritizing processing of a workpiece is provided. At least one workpiece is processed. A tag associated with the workpiece is provided. The tag includes process priority data for determining an order relating to processing the workpiece.

Abstract: A process for producing a starch comprises treating a feed starch that comprises amylopectin with glucanotransferase to produce a chain-extended starch, and treating the chain-extended starch with a debranching enzyme to produce a starch product that comprises amylose fragments. At least about 38% by weight of the amylose fragments have a degree of polymerization (DP) of at least about 35.

Abstract: By using an implantation mask having a high intrinsic stress, SMT sequences may be provided in which additional lithography steps may be avoided. Consequently, a strain source may be provided without significantly contributing to the overall process complexity.

Abstract: The RMS database for a semiconductor process line is established on the basis of product groups or categories, wherein all members of a category are linked by a common feature, such as a common basic design or a common basic technology. Common process recipes in a specified category may then be set up only once, thereby reducing the amount of effort for establishing the database. Moreover, new product types may be readily incorporated into the categories, thereby enabling the employment of the already-established category-specific context information.

Abstract: A process for producing an enzyme-resistant starch uses an aqueous feed composition that comprises (i) starch that contains at least about 50% by weight amylose, (ii) water, and (iii) alcohol. The concentration of starch in the feed composition is between about 5% and about 50% by weight, and the pH of the feed composition is between about 3.5 and about 6.5. In a first heating step, the feed composition is heated to a temperature between about 130-170° C. for about 0.1-3.0 hours. The feed composition is cooled to a temperature between about 4-70° C. for about 0.1-6.0 hours. In a second heating step, the feed composition is heated to a temperature between about 110-150° C. for about 0.1-10.0 hours. The starch is separated from the majority of the water and alcohol and is dried.

Abstract: By providing a protective layer in an intermediate manufacturing stage, an increased surface protection with respect to particle contamination and surface corrosion may be achieved. In some illustrative embodiments, the protective layer may be used during an electrical test procedure, in which respective contact portions are contacted through the protective layer, thereby significantly reducing particle contamination during a respective measurement process.

Abstract: A method, system, and apparatus for providing an electrical neurostimulation therapy to a neural structure of a patient's body using an implantable medical device (IMD). A first electrical signal is provided using the implantable medical device. A first electrical signal is applied to the neural structure. An implanted sensor is provided. A physiological parameter is sensed using the implanted sensor. The physiological parameter is selected from the group consisting of a neurotransmitter parameter, a neurotransmitter breakdown product parameter, a neuropeptide parameter, and a glucocorticoid (GC) parameter. The first electrical signal is modified based upon the sensed physiological parameter to generate a second electrical signal. The second electrical signal is applied to the neural structure.

Abstract: By forming bulk-like transistors in sensitive RAM areas of otherwise SOI-based CMOS circuits, a significant savings in valuable chip area may be achieved since the RAM areas may be formed on the basis of a bulk transistor configuration, thereby eliminating hysteresis effects that may typically be taken into consideration by providing transistors of increased transistor width or by providing body ties. Hence, the benefit of high switching speed may be maintained in speed-critical circuitry, such as CPU cores, while at the same time the RAM circuit may be formed in a highly space-efficient manner.

Abstract: An application programming interface is provided in an object-oriented programming platform for developing applications. A method comprises registering a first object with a second object to observe one or more properties associated with the second object, the second object having a set of methods associated therewith and replacing a first implementation of a method in the set of methods associated with the second object with a second implementation of the method that automatically sends a notification to the first object. The observable objects need not explicitly invoke the observer notifications, avoiding writing of a large amount of code. These observer notifications need only be sent for objects that are actually being observed but are related objects, substantially reducing the performance overhead of needless invocations of the observer notifications without limiting binding between objects.

Abstract: In a replacement gate approach, a top area of a gate opening has a superior cross-sectional shape which is accomplished on the basis of a plasma assisted etch process or an ion sputter process. During the process, a sacrificial fill material protects sensitive materials, such as a high-k dielectric material and a corresponding cap material. Consequently, the subsequent deposition of a work function adjusting material layer may not result in a surface topography which may result in a non-reliable filling-in of the electrode metal. In some illustrative embodiments, the sacrificial fill material may also be used as a deposition mask for avoiding the deposition of the work function adjusting metal in certain gate openings in which a different type of work function adjusting species is required.

Abstract: The present invention is directed to methods and apparatuses for removing bubbles from a process liquid. The process liquid can comprise a plating solution used in a plating tool. The process liquid is supplied to a tank. A plurality of streams of the process liquid are directed towards a surface of the process liquid from below. This can be done by feeding the process liquid to a flow distributor comprising a plurality of openings providing flow communication between an inner volume of the flow distributor and a main volume of the tank. Before leaving the tank through an outlet, the process liquid flows through a flow barrier.

Abstract: When forming sophisticated high-k metal gate electrode structures in an early manufacturing stage, the dielectric cap layer of the gate electrode structures may be efficiently removed on the basis of a carbon spacer element, which may thus preserve the integrity of the silicon nitride spacer structure. Thereafter, the sacrificial carbon spacer may be removed substantially without affecting other device areas, such as isolation structures, active regions and the like, which may contribute to superior process conditions during the further processing of the semiconductor device.

Abstract: A substrate diode for an SOI device is formed in accordance with an appropriately designed manufacturing flow, wherein transistor performance enhancing mechanisms may be implemented substantially without affecting the diode characteristics. In one aspect, respective openings for the substrate diode may be formed after the formation of a corresponding sidewall spacer structure used for defining the drain and source regions, thereby obtaining a significant lateral distribution of the dopants in the diode areas, which may therefore provide sufficient process margins during a subsequent silicidation sequence on the basis of a removal of the spacers in the transistor devices. In a further aspect, in addition to or alternatively, an offset spacer may be formed substantially without affecting the configuration of respective transistor devices.

Abstract: The present invention is directed to a diode with an asymmetric silicon germanium anode and methods of making same. In one illustrative embodiment, the diode includes an anode comprising a P-doped silicon germanium material formed in a semiconducting substrate, an N-doped silicon cathode formed in the semiconducting substrate, a first conductive contact that is conductively coupled to the anode and a second conductive contact that is conductively coupled to the cathode.

Abstract: A new technique enables providing a stress-inducing alloy having a highly stress-inducing region and a region which is processable by standard processing steps suitable for use in a commercial high volume semiconductor device manufacturing environment. The regions may be formed by a growth process with a varying composition of the growing material or by other methods such as ion implantation. The highly stress-inducing region near the channel region of a transistor may be covered with an appropriate cover.

Abstract: By forming a first portion of a substrate contact in an SOI device on the basis of a trench capacitor process, the overall manufacturing process for patterning contact elements may be enhanced since the contacts may only have to extend down to the level of the semiconductor layer. Since the lower portion of the substrate contact may be formed concurrently with the fabrication of trench capacitors, complex patterning steps may be avoided which may otherwise have to be introduced when the substrate contacts are to be formed separately from contact elements connecting to the device level.