Abstract: A screen assembly for a shale shaker comprising a panel (500) and a support structure (600), the panel (500) having an area provided with a multiplicity of apertures and at least one layer of screening material arranged over the multiplicity of apertures, wherein said panel (500) is removable from said support structure (600).

Abstract: A method and apparatus is provided for associating operational data with workpieces and correlating the operational data with yield data. The method comprises processing a workpiece using a processing tool, associating the operational data with the workpiece during the processing of the workpiece and measuring the yield data associated with the processed workpiece. The method further comprises correlating the operational data with the yield data to make one or more determinations.

Abstract: In sophisticated transistor elements, integrity of sensitive gate materials may be enhanced while, at the same time, the lateral offset of extension regions may be reduced. To this end, at least a portion of the extension regions may be implanted at an early manufacturing stage, i.e., in the presence of a protective liner material, which may, after forming the extension regions, be patterned into a protective spacer structure used for preserving integrity of the sensitive gate electrode structure.

Abstract: A method is provided for controlling delivery of packets over a synchronous control channel in a wireless system employing the High Rate Packet Data (HRPD) standard. The synchronous channel is comprised of a plurality of slots, and a first packet is sent over the synchronous control channel in a first one of the plurality of slots along with an indication of a second one of the plurality of slots in which a second packet will be delivered. Thereafter, the second packet is sent over the control channel in the second one of the plurality of slots. Subsequent packets are handled similarly.

Abstract: A contact element may be formed on the basis of a hard mask, which may be patterned on the basis of a first resist mask and on the basis of a second resist mask, to define an appropriate intersection area which may represent the final design dimensions of the contact element. Consequently, each of the resist masks may be formed on the basis of a photolithography process with less restrictive constraints, since at least one of the lateral dimensions may be selected as a non-critical dimension in each of the two resist masks.

Abstract: A conductive cap material for a copper region may be provided with enhanced etch resistivity by taking into consideration the standard electrode potential of one or more of the species contained therein. For example, instead of a conventionally used CoWP alloy, a modified alloy may be used, by substituting the cobalt species by a metallic species having a less negative standard electrode potential, such as nickel. Consequently, device performance may be enhanced, while at the same time the overall process complexity may be reduced.

Abstract: Methods for automatically controlling a vibratory separator for processing drilling fluid are disclosed. The methods include introducing material to a vibratory separator, and sensing with a sensor apparatus a state parameter indicative of operation of the vibratory separator and providing a signal indicative of a value of the state parameter to a control apparatus. Then, with the control apparatus, automatically controlling the vibratory separator based on the level of the state parameter.

Abstract: In a test structure for determining dielectric breakdown events of a metallization system of semiconductor devices, a built-in compliance functionality may allow reliable switching off of the test voltage prior to causing high leakage currents, which may conventionally result in significant damage. Consequently, further failure analysis may be possible after the occurrence of a dielectric breakdown event.

Abstract: The present invention provides methods implemented in a base station having a plurality of antennas and one or more user terminals. One embodiment of the method includes receiving feedback from at least one user in response to transmitting a first frame to said at least one user. The first frame is formed by pre-coding at least one symbol using at least one first code word selected from at least one first code book associated with the at least one user. The method also includes transmitting at least one second frame to the user(s). The second frame(s) are pre-coded using at least one second codeword selected from at least one second codebook. The second codebook(s) determined based on the feedback and the first codeword(s).

Abstract: An apparatus operatively coupled to a well having a production casing positioned therein, the apparatus including a first device having and internal bore, a second device having an internal bore, and a fracture isolation sleeve disposed at least partially within the internal bores of the first and second devices, wherein the fracture isolation sleeve has an internal diameter that is greater than or equal to an internal diameter of the production casing.

Abstract: In a sophisticated semiconductor device including a large memory portion, a built-in self-test circuitry comprises a failure capturing logic that allows the capturing of a bitmap at a given instant in time without being limited to specific operating conditions in view of interfacing with external test equipment. Thus, although pipeline processing may be required due to the high speed operation during the self-test, reliable capturing of the bitmap may be achieved while maintaining high fault coverage of the test algorithm under consideration.

Abstract: A method includes defining a hierarchy associated with a test system including a plurality of test units for testing integrated circuit devices. At least some of the test units have a plurality of sockets. The hierarchy includes a first level including a first plurality of entities each associated with one of the sockets and at least a second level including a second plurality of entities each associated with a grouping of the sockets. State data associated with operational states of the sockets is received. A set of state metrics is generated for each entity at each level of the hierarchy based on the state data. Each set of state metrics identifies time spent in the operational states.

Abstract: In a semiconductor device comprising sophisticated high-k metal gate structures formed in accordance with a replacement gate approach, semiconductor-based resistors may be formed above isolation structures substantially without being influenced by the replacement gate approach. Consequently, enhanced area efficiency may be achieved compared to conventional strategies, in which the resistive structures may have to be provided on the basis of a gate electrode metal, while, nevertheless, a low parasitic capacitance may be accomplished due to providing the resistive structures above the isolation structure.

Abstract: By removing an outer spacer of a transistor element, used for the formation of highly complex lateral dopant profiles, prior to the formation of metal silicide, employing a wet chemical etch process, it is possible to position a stressed contact liner layer more closely to the channel region, thereby allowing a highly efficient stress transfer mechanism for creating a corresponding strain in the channel region, without affecting circuit elements in the P-type regions.

Abstract: In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet chemical etch recipe using ammonium hydroxide. Consequently, a further work function adjusting material may be formed with superior uniformity, while the efficiency of the subsequent adjusting of the work function may also be increased. Thus, superior uniformity, i.e., less pronounced transistor variability, may be accomplished on the basis of a replacement gate approach in which the work function of the gate electrodes of P-channel transistors and N-channel transistors is adjusted after completing the basic transistor configuration.

Abstract: By forming metallization structures on the basis of an imprint technique, in which via openings and trenches may be commonly formed, a significant reduction of process complexity may be achieved due to the omission of at least one further alignment process as required in conventional process techniques. Furthermore, the flexibility and efficiency of imprint lithography may be increased by providing appropriately designed imprint molds in order to provide via openings and trenches exhibiting an increased fill capability, thereby also improving the performance of the finally obtained metallization structures with respect to reliability, resistance against electromigration and the like.

Abstract: A growth mask provided for the deposition of a threshold adjusting semiconductor alloy may be formed on the basis of a deposition process, thereby obtaining superior thickness uniformity. Consequently, P-channel transistors and N-channel transistors with an advanced high-k metal gate stack may be formed with superior uniformity.

Abstract: By providing a CMP stop layer in a metal gate stack, the initial height thereof may be efficiently reduced after the definition of the deep drain and source areas, thereby providing enhanced process conditions for forming highly stressed dielectric materials. Consequently, the dielectric material may be positioned more closely to the channel region substantially without deteriorating gate conductivity.

Abstract: By combining an anneal process for adjusting the effective channel length and a substantially diffusion-free anneal process performed after a deep drain and source implantation, the vertical extension of the drain and source region may be increased substantially without affecting the previously adjusted channel length. In this manner, in SOI devices, the drain and source regions may extend down to the buried insulating layer, thereby reducing the parasitic capacitance, while the degree of dopant activation and thus series resistance in the extension regions may be improved. Furthermore, less critical process parameters during the anneal process for adjusting the channel length may provide the potential for reducing the lateral dimensions of the transistor devices.

Abstract: A method for transitioning power states in a device includes designating a first reduced power state as a target power state. A first expected residency for the target power state is determined based on a counting of activity requests associated with the device. The device is transitioned to the target power state responsive to the expected residency satisfying a first predetermined threshold.