Abstract: Disclosed herein is a massive multi-site (MMS) testing architecture. The MMS architecture includes a MMS interface on each of a plurality of devices under test. The MMS interface includes a test protocol manager that may receive test stimulus and send the test stimulus to cores of the device under test. The test protocol manager may receive test responses from cores of the device under test and generate test comparisons based on comparisons between the test responses and expected responses. The test protocol manager may store the test comparisons on the device under test and communicate the stored test comparisons to automated test equipment (ATE) upon being queried by the ATE. The device under test may send the test comparisons to the ATE over a low-bandwidth communication.

Abstract: A device (100) and method (200) for bonding a ribbon wire (104) to a workpiece (106) comprising feeding the ribbon wire through a passageway (116) of an ultrasonic bond capillary (102) and clamping the ribbon wire against an engagement surface (120) of the bond capillary via a clamping jaw (118) operably coupled to the bond capillary. The ribbon wire (104) is bonded to the workpiece (106) along a bonding surface (112) of the bond capillary (102) and penetrated, at least partially, between the bonding surface and the engagement surface (120) of the bond capillary by a cutting tool (124). The cutting tool (124) may comprise an elongate member (126) positioned between the bonding surface (112) and engagement surface (120), and may have a cutting blade (128) positioned at a distal end (130) thereof. The cutting tool (124) may further comprise a ring cutter (132), wherein the ribbon wire passes through a ring (134) having a cutting surface (138) defined about an inner diameter thereof.

Abstract: A semiconductor device (100A) with plastic encapsulation compound (102) and metal sheets (103a and 104) on both surfaces, acting as heat spreaders. One or more thermal conductors (103a) of preferably uniform height connect one sheet (103b) and the chip surface (101a); the number of conductors is scalable with the chip size. Each conductor consists of an elongated wire loop (preferably copper) with the wire ends attached to a pad (105), preferably both ends to the same pad. The major loop diameter is approximately normal to the first surface and the loop vertex in contact with the sheet (103b). The substrate (104, preferably a second metal sheet) covers at least portions of the second package surface and is thermally conductively connected to the chip.

Abstract: In a semiconductor flip-chip package having a semiconductor die as part of a substrate assembly, a lid (or lid assembly) and substrate are supported to prevent tilting and teetering of the lid. The lid and substrate do not adhere, so as to reduce cracking of solder joints due to thermal cycling induced by repeated system power on-off. An adhesion prohibitor may be applied so that a support does not adhere to both lid and substrate; the support may be prevented from adhering to both lid and substrate by a separate curing step. The arrangements and fabrication methods may be applied to many package types, including ball grid array (BGA) and land grid array (LGA) packages.

Abstract: A semiconductor system (200) of one or more semiconductor interposers (201) with a certain dimension (210), conductive vias (212) extending from the first to the second surface, with terminals and attached non-reflow metal studs (215) at the ends of the vias. A semiconducting interposer surface may include discrete electronic components or an integrated circuit. One or more semiconductor chips (202, 203) have a dimension (220, 230) narrower than the interposer dimension, and an active surface with terminals and non-reflow metal studs (224, 234). One chip is flip-attached to the first interposer surface, and another chip to the second interposer surface, so that the interposer dimension projects over the chip dimension. An insulating substrate (204) has terminals and reflow bodies (242) to connect to the studs of the projecting interposer.

Abstract: A device has a first semiconductor chip (101) with contact pads in an interior first set (102) and a peripheral second set (103). A deformed sphere (104) of non-reflow metal such as gold is placed on each contact pad of the first and second sets. At least one additional deformed sphere (105) is placed on the first set pads, forming column-shaped spacers. The first chip is attached to a substrate (110) with a chip attachment location and a third set of contact pads (112) near the location. Low profile bond wires (130) span between the pads of the third set and the second set. A second semiconductor chip (140) of a size has a fourth set of contact pads (141) at locations matching the first set pads. The second chip is placed over the first chip so that the fourth set pads are aligned with the spacers on the matching first set pads, and at least one edge of the second chip overhangs the sphere on at least one pad of the second set.

Abstract: A semiconductor system (300) has one or more packaged active subsystems (310, 330); each subsystem has a substrate with electrical contact pads and one or more semiconductor chips stacked on top of each other, assembled on the substrate. The system further has a packaged passive subsystem (320) including a substrate with electrical contacts and passive electrical components, such as resistors, capacitors, and indictors. The passive subsystem is stacked with the active subsystems and connected to them by solder bodies.

Abstract: The preferred embodiments of the present invention provide approaches for synchronizing signals in a testing system. In some embodiments, the timing signal associated with each device under test (DUT) is maintained at an integer multiple of the tester timing signal. Additionally, in other embodiments, the timing signal associated with various DUTs is used as a timing reference for other devices.

Abstract: While fabricating a packaged semiconductor chip, a wire is bonded on a chip contact pad using a wire bonding machine. A bond head of the wire bonding machine is moved relative to the chip contact pad, thereby pulling a first length of the wire out of the wire bonding machine. Part of the wire passes through a space between a first outer edge of a first bearing race and a second outer edge of a second bearing race during the pulling of the first length. The wire is bonded on a lead. A first piezoelectric element is energized in the bond head, thereby causing it to expand and press against the first bearing race, which brakes the first bearing race and brakes the wire between the first and second races. The bond head is moved relative to the lead during the braking and severs the wire proximate to the lead.

Abstract: A semiconductor assembly (300) comprising a semiconductor device (301), which has a plurality of metallic contact pads (302) and an outline by sides (303). A metallic bump (304) made of reflowable metal is attached to each of these contact pads. An electrically insulating substrate (305) has a surface with a plurality of metallic terminal pads (306) in locations matching the locations of the device contact pads, and further a plurality of grooves (310) and humps (311) distributed between the terminal pad locations, complementing the distribution of the terminal pads. Each bump is further attached to its matching terminal pad, respectively; the device is thus interconnected with the substrate and spaced apart by a gap (320). Adherent polymeric material (330) containing inorganic fillers fills the gap substantially without voids.

Abstract: A patterned plasma treatment may be provided on the chip and/or the substrate to enhance the distribution of underfill material between the chip and the substrate. The underfill material is typically dispensed after the chip is electrically connected to the substrate. The chip may be electrically connected to the substrate by an array of solder bumps, as one example. The underfill material is draw into a gap between the chip and the substrate by a capillary action. The patterned plasma-treated area formed on the chip and/or on the substrate may cause greater capillary force on the underfill material, as compared to non-plasma-treated areas. Such patterned plasma-treatment area may be designed and laid out to provide for more or better control of the underfill distribution between the chip and substrate while forming a chip package.

Abstract: An integrated circuit chip which has a plurality of pads and non-reflowable contact members to be connected by reflow attachment to external parts. Each of these contact members has a height-to-diameter ratio and uniform diameter favorable for absorbing strain under thermo-mechanical stress. The members have a solderable surface on each end and a layer of reflowable material on each end. Each member is solder-attached at one end to a chip contact pad, while the other end of each member is operable for reflow attachment to external parts.

Abstract: A method of protecting an interconnect is provided. The method includes forming an integrated circuit structure having an interconnect, and depositing vaporized benzotriazole on the interconnect.

Abstract: In a semiconductor system (100) including a chip (101) and a workpiece (102), the chip has metal-filled vias (140) positioned between contact pads (120) and the respective edges (110). In addition, seals against microcracks (150) and thermo-mechanical stress (151) are located between the vias and the active components, and sometimes also between the vias and the respective nearest edge. Workpiece (102) may be another semiconductor chip or a substrate; it has contact pads (170) matching the locations of the vias (140). The chip is vertically stacked on the workpiece so that each contact pad (170) is aligned and in electrical contact with the corresponding via (140).

Abstract: In a method and system for fabricating a full wafer (600) having dies, an orientation marker (606), and a reference die (608), includes configuring a reticle pattern (602) that is configured by arranging the dies in an array having m rows and n columns, where the m rows start in a row adjacent to the orientation marker (606), and m and n are integers. The reticle pattern (602) is transferred to the full wafer (600) to sequentially form a portion of the dies. The transferring includes placing an inkless marker (620) in the form of one or more non-circuit dies between the n columns of adjacent reticle patterns. The reticle pattern (602) is repeatedly transferred to form a remaining portion of the dies to complete the full wafer (600). A wafer map for the full wafer (600) is stored, with the wafer map including a non-circuit bin containing data describing the inkless marker (620).

Abstract: A semiconductor package comprising a die adjacent a substrate, a supporting plate adjacent the die, and a conducting plate abutting the supporting plate and electrically coupled to a metal apparatus adjacent the substrate and the die using a plurality of bond wires. The metal apparatus supplies power to the conducting plate.

Abstract: An electronic device (100) with one or more semiconductor chips (102) has an inductor (101) assembled on or under the chips. The inductor includes a ferromagnetic body (111) and a wire (104) wrapped around the body to form at least a portion of a loop; the wire ends (104a) are connected to the chips. The assembly is attached to a substrate (103), which may be a leadframe. The device may be encapsulated in molding compound (140) so that the inductor can double as a heat spreader (111c), enhancing the thermal device characteristics.

Abstract: The invention discloses methods and systems for singulation of block-molded arrays of semiconductor devices. Preferred embodiments include methods and associated systems for securing a block-molded array of semiconductor devices into a mounting ring with light-sensitive tape. Tape-deactivating is used to render exposed regions of the light-sensitive tape less tacky. The mounting ring containing the block-molded array is secured on a cutting table and the array is singulated into individual devices. Aspects of the invention also include the use of tape-deactivating light for making the light-sensitive tape less tacky to facilitate removal of the individual devices after singulation.

Abstract: An integrated circuit (IC) package that comprises a lead frame. The lead frame has a downset portion and leads. The downset portion has an exterior surface that is configured to face away from a mounting board, and an interior surface that is configured to face towards the mounting board. The leads are bent away from the exterior surface, and each of the leads have a first end coupled to an IC and a second end configured to pass through one of a plurality of mounting holes extending through the mounting board. The IC is coupled to the interior surface.

Abstract: Semiconductor devices and fabrication methods are presented, in which transistor gate structures are created using doped metal silicide materials. Upper and lower metal silicides are formed above a gate dielectric, wherein the lower metal silicide is doped with n-type impurities for NMOS gates and with p-type impurities for PMOS gates, and wherein a silicon may, but need not be formed between the upper and lower metal silicides. The lower metal silicide can be deposited directly, or may be formed through reaction of deposited metal and poly-silicon, and the lower silicide can be doped by diffusion or implantation, before or after gate patterning.