Abstract: Provided is a circuit or device suppressing an increase in circuit area. The overvoltage protection circuit is configured to protect first and second input transistors from overvoltage, the overvoltage protection circuit, including: a first transistor including one end connected to a drain of any one of the first input transistor and the second input transistor; a second transistor configured to supply a constant current to the one input transistor; a third transistor connected in cascade to the second transistor; a fourth transistor configured to supply a constant current to another input transistor; and a switch configured to establish conduction between the gate of the first input transistor and a drain of the second input transistor when a voltage exceeding a threshold voltage of the second input transistor is applied to the gate of each of the first input transistor and the second input transistor.

Abstract: A switching regulator includes a first differential amplifier outputting an amplified difference voltage obtained by amplifying a difference between a reference voltage and a feedback voltage in proportion to an output voltage; a second differential amplifier including a differential pair of a first transistor and a second transistor, the second differential amplifier outputting an error voltage based upon the amplified difference voltage supplied to each gate of the first transistor and the second transistor; a pulse wide modulation circuit converting the error voltage into a PWM signal; a first resistor containing a first end connected to the source of the first transistor; a second resistor containing a first end connected to the source of the second transistor; and a capacitor containing a first end connected to the source of the first transistor and the first end of the first resistor.

Abstract: A voltage regulator includes a differential amplifier circuit that controls an output transistor, and a phase compensation circuit. The phase compensation circuit includes: a first transistor having a drain connected to an output port of the differential amplifier circuit, and having a drain-source current with a negative temperature characteristic; a second transistor having a drain connected to a gate of the first transistor, having a gate connected to the gate of the first transistor via a resistor, and having a drain-source current with a negative temperature characteristic; and a current mirror circuit that includes a voltage detection transistor for detecting a voltage input to the gate of the output transistor, and that supplies a current with a positive temperature characteristic in response to a current flowing in the voltage detection transistor.

Abstract: The switching regulator includes a voltage regulator configured to supply an internal power supply voltage to a switching control circuit, a depletion type first transistor having a drain connected to an output terminal, a second transistor having a drain connected to a source of the first transistor and a source connected to the voltage regulator, and a comparison circuit comparing a source voltage of the first transistor with an output voltage of the voltage regulator. In response to detecting that the source voltage of the first transistor has become higher than the internal power supply voltage, control is performed so that the second transistor is turned on.

Abstract: The semiconductor device includes a first current generation circuit configured to generate a first current, a second current generation circuit configured to generate a second current from the first current, a third current generation circuit configured to generate a third current from the second current, a voltage-current conversion circuit configured to apply the third current to a diode and convert a generated voltage into a fourth current, a fourth current generation circuit configured to generate a fifth current from the fourth current, and an arithmetic circuit configured to generate a temperature signal from the fifth current.

Abstract: An oscillation circuit includes a ring oscillator and a waveform shape circuit configured to shape a waveform of an output signal of the ring oscillator. The waveform shape circuit includes: a preamplifier circuit configured to supply a first signal and a second signal which have the same frequency as a frequency of the output signal, the first signal having an opposite phase from a phase of the output signal, the second signal having an opposite phase from the phase of the first signal; and an amplitude amplifier circuit including a first transistor, a second transistor, a third transistor including a drain connected to a drain of the first transistor and a gate connected to a drain of the second transistor, and a fourth transistor including a drain connected to the drain of the second transistor and a gate connected to the drain of the first transistor.

Abstract: A reference current source 100 includes a reference voltage circuit 110, generating a reference voltage Vref; a voltage division circuit 130, dividing the reference voltage Vref and outputting a divided voltage Vdiv; and an output MOS transistor 140, supplying a reference current Iref in response to the divided voltage Vdiv being applied to a gate terminal 140G. The reference voltage circuit 110 includes a depletion type MOS transistor 111, and an enhancement type MOS transistor 112 having same conductivity type and impurity concentration as a channel 111c of the depletion type MOS transistor 111 and a different Fermi level from a gate electrode 111g of the depletion type MOS transistor 111. The voltage division circuit 130 outputs the divided voltage Vdiv within a voltage range which is 0V or above and lower than a cross point X to the gate terminal 140G of the output MOS transistor 140.

Abstract: A current limiter circuit limits a current in a path connecting an input terminal and an output terminal through a switch including a control port, the switch controlling the current to a predetermined value or less. The current limiter circuit includes a gate controller and a negative feedback circuit. The gate controller includes an input port which is connected to a connection point between a first path through which a first signal is transmitted and a second path through which a second signal is transmitted, and receiving the first signal and an output port supplying a control signal to the control port of the switch. The negative feedback circuit includes an input port coupled to a node via a capacitor if the capacitor is connected between thereof and the node provided between the switch and the output terminal and an output port connected to the input port.

Abstract: Provided are an environment sensor and an environment power generation device capable of measuring generated power of a power generation element to follow a changing environment. The environment sensor includes a voltage control circuit and a current measurement circuit. The voltage control circuit includes a voltage control terminal configured to receive a generated current and a current output terminal configured to provide an output current, and is configured to receive the generated current at the voltage control terminal while controlling a voltage of a positive electrode terminal of the power generation element connected to the voltage control terminal to a first predetermined voltage lower than a generated voltage of the power generation element. The current measurement circuit includes a current measurement terminal configured to receive the output current and a signal output terminal configured to provide a measurement signal.

Abstract: A controller includes: first to third input terminals; connection terminals; an output terminal; a first rectifying element, connected between the first input terminal and the second input terminal with a direction from the second input terminal to the first input terminal as a forward direction; a second rectifying element, connected between a connection point between the first input terminal and the first rectifying element and the output terminal with a direction from the connection point to the output terminal as a forward direction; an FET circuit, including a first depletion type FET and at least one other FET; a resistor, connected to the second input terminal and the third input terminal; and a clamp circuit, clamping a voltage of the third input terminal to a predetermined voltage.

Abstract: Provided is a sensor device being a signal processing device, including: a capacitor; a sensor unit configured to wirelessly transmit, in a case in which electric power of a predetermined amount or more is accumulated in the capacitor, a first signal (SG1) through use of the electric power accumulated in the capacitor; a reception unit configured to receive a radio wave transmitted from a power transmission device being an external device; and a transmission antenna functioning as a second transmission unit, the transmission antenna being configured to wirelessly transmit, in response to reception of the radio wave, a response signal (SG3) being a second signal generated based on the received radio wave without using the electric power accumulated in the capacitor.

Abstract: A battery device includes a battery; a first predetermined state detection part detecting a first predetermined state regarding a first cell; a first logic circuit performing first control based on detection result of first predetermined state detection part; a second predetermined state detection part detecting a second predetermined state regarding a second cell; a charger connection detection part detecting presence or absence of connection between battery and a charger; and a second logic circuit performing second control based on detection result of second predetermined state detection part, detection result of charger connection detection part, and first notification from first logic circuit regarding first predetermined state.

Abstract: A charge/discharge control circuit includes: a UVLO detection circuit which is connected to a positive power input terminal and detects that voltage of the positive power input terminal is less than UVLO detection voltage; a load short circuit detection circuit which is connected to an overcurrent detection terminal and detects voltage of the overcurrent detection terminal; a discharge control part which performs control to turn off a discharge control FET in response to a load short circuit detection signal output from the load short circuit detection circuit; a UVLO mask part which masks a UVLO detection signal output from the UVLO detection circuit by a load short circuit detection signal output from the load short circuit detection circuit; and an internal circuit on/off control circuit which controls on/off of an internal circuit based on a signal output from the UVLO mask part.

Abstract: A ribbon-type electrode and a ribbon-type sensor are capable of long-term sensing. The ribbon-type electrode includes an electrode section, which contains a first electrode and a second electrode. The first electrode which contains a thin plate-like structure containing a first type of metal having a higher ionization tendency than hydrogen and the second electrode are disposed to face each other with respect to a plane formed by a length direction and a width direction of the first electrode with an insulating section made of non-conductive fibers interposed therebetween.

Abstract: A voltage detection circuit, a charge control circuit, a charge and discharge control circuit, and a semiconductor device are provided. The voltage detection circuit includes: an input port; a plurality of transistors connected in series and including at least an input transistor including a gate connected to the input port, a source connected to a first power supply terminal, and a drain, and a first transistor including a drain connected to a second power supply terminal, a gate, and a source connected to the gate of the first transistor; and an output port configured to be one of connection points of the plurality of transistors.

Abstract: A temperature sensor device is capable of measuring minute temperature changes while being manufactured at low cost without needing a high performance IC tester. A temperature sensor device includes a temperature sensor circuit 2 and a temperature sensor 1. The temperature sensor 1 includes a PN junction element 15 which is a temperature sensing element, a variable current source which supplies different forward currents of at least two values to the PN junction element 15 and a constant voltage source 16 which outputs a constant voltage having the same temperature properties as a forward voltage of the PN junction element 15.

Abstract: The present invention provides a reference voltage generation device which includes a constant current circuit outputting a constant current in response to an input voltage; a voltage generation circuit connected in series to the constant current circuit, using the constant current as an input current, and generating an output voltage based on the input current; and a reference voltage output port outputting the output voltage. In the constant current circuit, multiple depletion type MOS transistors are connected in series, the gate widths are the same, and the sum of the gate lengths is the total gate length of the constant current circuit. In the voltage generation circuit, multiple enhancement type MOS transistors are connected in series, the gate widths are the same, and the sum of the gate lengths is the total gate length of the voltage generation circuit.

Abstract: A cell balancing circuit and a battery device are provided. The cell balancing circuit controls cell balancing between a first battery cell that generates a first cell voltage and a second battery cell which is connected in series with the first battery cell and generates a second cell voltage. The cell balancing circuit includes: a first voltage divider circuit that outputs a first voltage divider voltage as an average voltage of the first battery cell and the second battery cell; a first differential voltage-to-current converter that discharges from the first battery cell a first cell balancing current generated according to a voltage difference obtained by subtracting the second cell voltage from the first voltage divider voltage; and a second differential voltage-to-current converter that discharges from the second battery cell a second cell balancing current generated according to the voltage difference with polarity reversed.

Abstract: A semiconductor device (1) includes power terminals (VDD, GND), a voltage detection circuit (11), transistors (12, 13, 14), a depletion transistor (15), a control circuit (16), input ports (12a, 14a) connected to an output port (11b), input ports (11a, 16b) connected to the power terminal (VDD), a source end (12b), input ports (11c, 16c) connected to the power terminal (GND), source ends (14c, 15c), a gate end (15a), a source end (13b) connected to a drain end (12c), a gate end (13a) connected to a drain end (13c), drain ends (14b, 15b), and an input port (16a). Even in the case where a power supply voltage input to the voltage detection circuit (11) is equal to or lower than a minimum operating voltage of the voltage detection circuit (11), a signal received by the input port (16a) of the control circuit (16) matches a potential of the input terminal (GND).

Abstract: A monitor is provided, which is capable of continuously monitoring a monitoring target in a batteryless and maintenance free manner even with a small storage capacity. The monitor is a device using, as a sensor, a thermal battery including a thermoelectric power generation element which outputs a voltage according to a temperature difference between a temperature of an atmosphere covering the monitoring target and a temperature of a contact part with the monitoring target.