Abstract: A bus arbitration circuit includes a first bus port, a second bus port, a first output circuit connected to the first bus port, a second output circuit connected to the second bus port, a control circuit, and a switch circuit. The control circuit includes a first input port, a second input port, a control signal output port, and an output port. The first input port receives data of the first bus port, the second input port receives data of the second bus port, and data is outputted from the output port to an input port of the first output circuit. The switch circuit has an input port connected to the first bus port, a control port connected to the control signal output port of the control circuit, and an output port from which data of a host bus is outputted to an input port of the second output circuit.

Abstract: A convenient electronic circuit in which a switch is able to be switched through electric power obtained using weak radio waves is provided.

Abstract: Provided is a semiconductor device that allows reduction of a measurement time of a PCMTEG and improvement of productivity in an IC manufacturing process. A PCMTEG region 100 formed on a surface of a semiconductor substrate is divided into a main PCMTEG region 101 and a sub-PCMTEG region 102, and TEGs having specifications for their electrical characteristic values are all collectively arranged in the sub-PCMTEG region 102.

Abstract: The semiconductor device includes a Hall element, a first differential pair, a second differential pair, an output amplifier circuit, and a voltage divider circuit. The Hall element outputs a signal that is dependent on stress to be applied to a semiconductor substrate to the first differential pair. The voltage divider circuit divides a voltage into a divided voltage having a voltage dividing ratio that is dependent on the stress. The first differential pair outputs a first current based on the signal. The second differential pair outputs a second current based on the divided voltage and a reference voltage. The output amplifier circuit outputs a voltage based on the first and second currents. A gain of the output amplifier circuit is approximated by a sum of a difference between stress dependence coefficients of transconductances of the first and second differential pairs and a stress dependence coefficient of the voltage dividing ratio.

Abstract: A DC-DC converter of a synchronous rectification type includes a synchronous rectification transistor and a backflow detection circuit which detects a reverse current based on a voltage across the synchronous rectification transistor. The backflow detection circuit includes a first-stage differential input circuit including a first transistor, a first resistor, a second transistor, a second resistor and a fifth transistor, and a second-stage differential input circuit including a third transistor and a fourth transistor. The fifth transistor is of a same conductive type as the synchronous rectification transistor and contains a drain connected to the other end of the first resistor with respect to an end connected to the first transistor.

Abstract: The cell balance circuit is a circuit connected in parallel to a secondary battery including a battery pack in which a first cell to an nth cell (n is plural) are connected in series in order from a positive electrode to a negative electrode and adjusting individual voltages of n cells. The cell balance circuit includes a switch circuit which can respectively open/close paths connected to n cells, and a cell discharge resistor respectively connected to the first cell to the nth cell via the switch circuit. The switch circuit switches to a cell balance stop state where each of the first cell to the nth cell is not connected to the cell discharge resistor in at least one state of a state where a charger is not connected to an external terminal, or a state where the secondary battery is being discharged to a load.

Abstract: A semiconductor device includes a semiconductor substrate, a field-effect transistor arranged at least partially on the semiconductor substrate and used in an analog circuit, and having a P-type gate electrode, an interlayer insulating film arranged on the field-effect transistor, and a hydrogen shielding metal or metallic film arranged on the interlayer insulting film and covering the P-type gate electrode and configured to shield hydrogen.

Abstract: An oscillation circuit includes first and second constant current circuits, first and second switch circuits, first and second MOS transistors, and an output port. The first constant current circuit is connected to one port of a capacitor. The first MOS transistor has a gate and a drain connected to the second constant current circuit and a source connected to another port of the capacitor. The second MOS transistor has a gate connected to the gate of the first MOS transistor, and a drain connected to the one port of the capacitor. The second switch circuit is connected between a source of the second MOS transistor and a second power supply terminal. The output port outputs a signal based on a voltage of the one port. Turn-on and turn-off of the first and second switch circuits are controlled by the signal of the output port and an inverted signal.

Abstract: In the semiconductor device, a high-concentration diffusion layer and a low-concentration diffusion layer are disposed around a drain diffusion layer of an ESD protection element. The high-concentration diffusion layer is separated from a gate electrode, and a medium concentration LDD diffusion layer is disposed in a separation gap. Variations in characteristics are suppressed by reducing thermal treatment on the high-concentration diffusion layer and a medium concentration diffusion layer.

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, and a vertical Hall element provided on the semiconductor substrate. The vertical Hall element includes an impurity diffusion layer of a second conductivity type and three or more electrodes. The impurity diffusion layer is provided on the semiconductor substrate and has an impurity concentration which increases as a depth increases. The three or more electrodes are provided in a straight line on a surface of the impurity diffusion layer and are composed of an impurity region of the second conductivity type having a higher concentration than the impurity diffusion layer.

Abstract: The semiconductor device includes a magnetic switch provided to a semiconductor substrate. The magnetic switch includes: a horizontal Hall element including first electrodes and second electrodes arranged at positions perpendicular to the first electrodes; a switch circuit configured to select a drive current direction of the Hall element from four directions; an SH comparator configured to alternately perform a first operation for sampling a signal transmitted from the Hall element and a second operation for sending a signal which is based on a result of comparing a value of the sampled signal and a reference value; a latch circuit configured to hold this sent signal and send the held signal as a latch output signal; and a control circuit configured to select the drive current direction in each of a period for the first operation and a period for the second operation based on the latch output signal.

Abstract: A charge-pump control circuit includes an oscillator which supplies a clock for driving a charge pump driver to supply a first gate voltage to a discharging transistor in order to control discharge from a battery, and driving a charge pump driver to supply a second gate voltage to a charging transistor in order to control charge to the battery, respectively; and a drive control circuit which sets a control target voltage as one of the first gate voltage and the second gate voltage having a lower voltage in order to control generation of the clock by the oscillator according to the control target voltage.

Abstract: The charge control circuit includes a cell connection detection circuit monitoring a voltage between input ports to which terminals of a cell pack are connected, an overvoltage detection circuit monitoring an overvoltage of the secondary cells, a first latch circuit receiving a signal output by the cell connection detection circuit, a second latch circuit receiving a signal output by the overvoltage detection circuit, a reset circuit outputting a signal to the first latch circuit and the second latch circuit when the charge control circuit is activated, and a control circuit receiving a signal output from the second latch circuit and outputting a signal for protecting the cell pack from the overvoltage. The control circuit does not output a signal for blowing the fuse until the first latch circuit receives a detection signal of the cell connection detection circuit.

Abstract: A semiconductor device includes a vertical Hall element provided in a first region of a semiconductor substrate, and having the first to the third electrodes arranged side by side in order along a first straight line; a circuit provided in a second region of the semiconductor substrate different from the first region, and having a heat source; and a second straight line intersecting orthogonally a current path for a Hall element drive current which flows between the first electrode and the third electrode. The second line passes a center of the vertical Hall element, and a center point of a region which reaches the highest temperature in the circuit during an operation of the vertical Hall element lies on the second straight line.

Abstract: Provided is a technology capable of protecting a charge/discharge control circuit and a battery device from a reverse connection state without a separately provided protection circuit. The charge/discharge control circuit to be contained in a battery device including a secondary cell, an external positive terminal and an external negative terminal, and FETs which control charging and discharging of the secondary cell, respectively, includes: VDD and VSS terminals; a charge control terminal; a discharge control terminal; a voltage detection terminal to which a voltage applied to the external positive terminal is supplied; an NMOS transistor communicates the discharge control terminal and the voltage detection terminal; and a bipolar transistor having a collector to be connected to a drain of the NMOS transistor, an emitter to be connected to a source of the NMOS transistor, and a base to be connected to a bulk of the NMOS transistor and the VSS terminal.

Abstract: A charge-discharge control circuit includes a first cell balancing circuit having a first switch; a second cell balancing circuit having a second switch; a first cell balance detection circuit having a third switch; a second cell balance detection circuit having a fourth switch; and a control circuit which outputs a control signal to turn on the first switch in a prescribed cycle according to the voltage of a first battery which is higher than or equal to a cell balance detection voltage, or outputs a control signal to turn on the second switch in the prescribed cycle according to the voltage of a second battery which is higher than or equal to the cell balance detection voltage, and outputs a control signal to turn off the third switch and the fourth switch in the prescribed cycle during output of the control signal.

Abstract: This replacement necessity assessment apparatus for an absorbent member includes: a power generator which is configured to generate power as a result of contact with liquid absorbed in the absorbent member, and of which power generation amount changes in accordance with an amount of the liquid; a signal output unit configured to output a detection signal according to the power generation amount; and a processing unit configured to acquire a parameter regarding the amount of the liquid based on the detection signal, the processing unit configured to determine, based on the parameter, whether or not replacement of the absorbent member is necessary.

Abstract: A constant voltage circuit includes a depletion transistor having a drain, a gate, and a source, the drain connected to a first power supply terminal, and the gate connected to the source, a voltage division circuit connected between the first power supply terminal and an output terminal, a first enhancement transistor having a drain connected to the source of the depletion transistor, a source connected to the output terminal, and a gate connected to an output terminal of the voltage division circuit, a second enhancement transistor having a source connected to the first power supply terminal, a drain connected to the output terminal, and a gate connected to the drain of the first enhancement transistor, and a pull-down element having one end connected to the output terminal and the other end connected to a second power supply terminal.

Abstract: An amplifier includes: a signal polarity inversion circuit which modulates an input signal and outputs a modulation signal; an amplifier circuit which is constituted from an operational transconductance amplifier (OTA) to amplify the modulation signal and output a current; and a sample-hold circuit having a sampling capacitor which is charged and discharged by selective sampling of the output current of the amplifier circuit and a holding capacitor to which the voltage of the sampling capacitor is transferred.

Abstract: Provided is a reference voltage circuit including a first MOS transistor to a sixth MOS transistor, a first resistor and a second resistor, a current source circuit, and an output terminal. Five of the transistors form a differential transconductance amplifier, and an input transistor of the differential transconductance amplifier operates in the manner of weak inversion operation.