Abstract: Provided is a constant voltage circuit with which a variation of an output voltage in response to a sudden change of a power supply voltage is small. The constant voltage circuit includes: an ED-type reference voltage circuit including at least two depletion mode transistors and an enhancement mode transistor which are connected in series; a depletion mode transistor connected in series between the power supply terminal and the ED-type reference voltage circuit; a first output terminal or a second output terminal; and a power supply variation suppression circuit which is connected between a connection point and the ground terminal and which suppresses a variation of the power supply voltage. The power supply variation suppression circuit includes a detection circuit which detects whether there is a variation of the power supply voltage, and a pass transistor which is connected in parallel to the detection circuit.

Abstract: The semiconductor device includes a first current generation circuit configured to generate a first current, a second current generation circuit configured to generate a second current from the first current, a third current generation circuit configured to generate a third current from the second current, a voltage-current conversion circuit configured to apply the third current to a diode and convert a generated voltage into a fourth current, a fourth current generation circuit configured to generate a fifth current from the fourth current, and an arithmetic circuit configured to generate a temperature signal from the fifth current.

Abstract: A low-cost and easy-to-use temperature sensor is capable of measuring minute temperature changes. A temperature sensor 1 includes a diode 15 which is a temperature sensing element (PN junction element), a variable current source 10 which supplies at least two different forward currents I1 and I2 to the diode 15, a constant voltage source 16 which outputs a constant voltage Vb having the same temperature properties as a forward voltage Vf of the diode 15 and an amplifier 17 which amplifies a difference between the forward voltage Vf of the diode 15 and the constant voltage Vb.

Abstract: A reference current source 100 includes a reference voltage circuit 110, generating a reference voltage Vref; a voltage division circuit 130, dividing the reference voltage Vref and outputting a divided voltage Vdiv; and an output MOS transistor 140, supplying a reference current Iref in response to the divided voltage Vdiv being applied to a gate terminal 140G. The reference voltage circuit 110 includes a depletion type MOS transistor 111, and an enhancement type MOS transistor 112 having same conductivity type and impurity concentration as a channel 111c of the depletion type MOS transistor 111 and a different Fermi level from a gate electrode 111g of the depletion type MOS transistor 111. The voltage division circuit 130 outputs the divided voltage Vdiv within a voltage range which is 0V or above and lower than a cross point X to the gate terminal 140G of the output MOS transistor 140.

Abstract: Provided is a shunt regulator including: multiple resistors, connected in series between an output terminal and a ground terminal and constituting a voltage divider circuit; an output transistor, connected between the output terminal and the ground terminal; a first drive circuit, including a first reference voltage circuit which outputs a first reference voltage and an error amplifier, and controlling the output transistor based on a voltage of a first output terminal of the voltage divider circuit; a second drive circuit, controlling the output transistor based on a voltage of a second output terminal of the voltage divider circuit; and an activation control circuit, switching operation of the first drive circuit and the second drive circuit based on the first reference voltage. The second drive circuit has a shorter activation time than the first drive circuit.

Abstract: A voltage follower circuit includes a first MOS transistor which has a source connected to an input port, a second MOS transistor which has a source connected to an output port and has a gate and a drain connected to a gate of the first MOS transistor, a first constant current source connected between a drain of the first MOS transistor and a second power supply terminal, a second constant current source connected between the drain of the second MOS transistor and the second power supply terminal, and a depletion type third MOS transistor which has a gate connected to the drain of the first MOS transistor, has a drain connected to a first power supply terminal, and has a source connected to the output port.

Abstract: A semiconductor device includes a magnetic switch provided on a semiconductor substrate. The magnetic switch includes: a Hall element, first and second power supply terminals; a current source driving the Hall element; a switch circuit switching a differential output voltage supplied from two electrodes of the Hall element to a first or second state based on a control signal supplied from a control terminal; an amplifier amplifying a signal from the switch circuit; a reference voltage circuit generating a reference voltage based on a reference common mode voltage and a control signal; a comparator receiving an output signal of the amplifier and the reference voltage; and a latch circuit latching an output voltage of the comparator. The reference voltage of the reference voltage circuit is controlled by switching from a reference value to a voltage with a high or low adjustment value according to the output voltage of the comparator.

Abstract: To provide a resistance device which has a small temperature dependence, in which a resistance value is adjustable in a wide range of from a high resistance value to a low resistance value, and which has a small circuit area, and to provide a current detection circuit including the resistance device. The resistance device is to be connected between two terminals, and a resistance value thereof is variable, the resistance device including: a reference resistor; a series variable resistor circuitry including at least one parallel variable resistor circuit which is connected in series to each other, and which each includes a resistor and a trimming element connected in parallel to the resistor; and a parallel variable resistor circuitry including at least one series variable resistor circuit which is connected in parallel to each other, and which each includes a resistor and a trimming element connected in series to the resistor.

Abstract: Provided is a semiconductor device with a reference voltage circuit including an enhancement type transistor having P-type polycrystalline silicon as a first gate electrode, and a depletion type transistor having N-type polycrystalline silicon as a second gate electrode, in which the enhancement type transistor has an impermeable film that is locally provided to cover the first gate electrode via an interlayer insulating film disposed on the first gate electrode, and a nitride film that has an opening portion which is provided larger than the first gate electrode and smaller than the impermeable film, and is provided to cover a periphery of the impermeable film, and the depletion type transistor has a nitride film that is directly provided on an interlayer insulating film disposed on the second gate electrode and covers the depletion type transistor without a gap.

Abstract: Provided is a semiconductor storage apparatus having a storage apparatus driving circuit which can efficiently perform screening tests for the semiconductor memory device. A semiconductor memory device includes a wright-voltage supply circuit, a wright-voltage switching circuit, a bit line discharge control circuit, a bit line discharge circuit, and a memory array. The wright-voltage supply circuit is connected to the memory array through the wright-voltage switching circuit. The bit line discharge control circuit is connected to the memory array through the bit line discharge circuit.

Abstract: Provided is a DC/DC converter capable of providing overvoltage protection reliably without being affected by, for example, an external element connected to an output terminal. The DC/DC converter includes a comparator, an RS-FF circuit, a drive circuit, and an ON-timer circuit, and the ON-timer circuit includes: a current source circuit which provides an electric current based on a power supply voltage; a ripple generation circuit which generates a ripple voltage; an averaging circuit which averages the ripple voltage; a timer circuit which generates an ON-timer signal; and an overvoltage protection circuit (clamp circuit).

Abstract: The present invention provides a Schmitt trigger circuit in which chattering does not occur in the output of the Schmitt trigger circuit even when it is connected to a communication bus without impedance matching and reflected noise is superimposed on the input signal. The Schmitt trigger circuit includes: a first signal detection circuit; a second signal detection circuit; a latch circuit; a selection signal generation circuit; a first input port; and a first output port. The first signal detection circuit is connected to the first input port, the latch circuit and the selection signal generation circuit. The second signal detection circuit is connected to the first input port, the latch circuit and the selection signal generation circuit. The latch circuit is connected to the selection signal generation circuit and the output port. The selection signal generation circuit includes a delay circuit.

Abstract: A semiconductor device has an off transistor (10) in which a gate electrode (3) and a source region (6) of an N-type MOS transistor are connected to a ground terminal and a drain region (5) is connected to an external signal terminal (100b). In the off transistor (10), the gate electrode (3) is extensively provided over a portion or entirety of the drain region (5) in addition to a channel region. A capacitance (C2) formed between the gate electrode (3) and the drain region (5) may be greater than a capacitance (C1) generated between the gate electrode (3) and a ground potential.

Abstract: A power generation sensor includes: a housing body in which a module receiving a generated power is housed; a module with a first connector electrode disposed on a front face; a second connector electrode disposed on an inner face of the housing body connected to the first connector electrode; and a power generation electrode connected to the second connector electrode.

Abstract: A power generation sensor, generating electric power using a liquid, includes: a base; a positive electrode for power generation disposed in a first direction of the base and containing a first material; a negative electrode for power generation disposed in the first direction and containing a second material; a first connector electrode connected to a one-side end of the positive electrode in the first direction and to a sensor module; and a second connector electrode connected to a one-side end of the negative electrode in the first direction and to the sensor module. The first connector electrode contains the first material and has a larger width in a second direction orthogonal to the first direction than the positive electrode in the second direction. The second connector electrode contains the second material and has a larger width in the second direction than the negative electrode in the second direction.

Abstract: Provided is a semiconductor device applicable to both types of packages regardless of whether or not double bonding of a lead frame pad is allowed. The semiconductor device includes: an operational amplifier; a feedback resistor; a reference voltage generation circuit; an output transistor; a first pad which is connected to an output terminal of the output transistor, and is to be selectively connected to a lead frame pad by a bonding wire; a second pad to be selectively connected to the lead frame pad by a bonding wire; and a connection switching element provided between the first pad and the second pad. In a case in which the second pad is connected to the lead frame pad by the bonding wire, the connection switching element interrupts connection between the first pad and the second pad.

Abstract: According to the present invention, an optical latch circuit includes a voltage detector configured to compare a first power generation voltage input from a first input terminal with a preset first threshold voltage and output a set signal from a determination output terminal when the first power generation voltage exceeds the first threshold voltage, a first photovoltaic element connected between the first input terminal and a grounding point in a forward direction and configured to output a first power generation voltage to the first input terminal according to photovoltaic power when light is radiated, and a feedback resistor inserted between the first input terminal and the determination output terminal.

Abstract: A convenient electronic circuit in which a switch is able to be switched through electric power obtained by weak radio waves is provided.

Abstract: Provided is a sensor device provided with improved reproducibility of a switching characteristic and reduced average consumption current. A sensor device include: a sensor; a drive circuit configured to drive the sensor; a processing circuit configured to output a binary result signal obtained by binarizing an electrical signal output from the sensor; a determination circuit configured to capture the binary result signal a plurality of times and perform a predetermined logical determination processing; a latch circuit configured to capture an output signal of the determination circuit; an output terminal; and a control circuit configured to output a control signal for intermittently controlling at least one of the drive circuit and the processing circuit such that an operation period and a pause period are repeated with a predetermined cycle. The operation period is interrupted and caused to transition to the pause period in a predetermined case.

Abstract: A shunt regulator includes: a capacitor, connected between an output terminal and a ground terminal; a voltage divider circuit and an output transistor, connected between the output terminal and the ground terminal; an error amplifier, controlling the output transistor based on a voltage at an output terminal of the voltage divider circuit and a reference voltage; a non-volatile memory; a memory control circuit, outputting a data read signal to the non-volatile memory; and a voltage detection circuit, detecting that a voltage at the output terminal has reached a predetermined voltage which permits a data reading operation of the non-volatile memory, and outputting a detection signal to the memory control circuit. An operating current of the non-volatile memory is supplied from the capacitor.