Abstract: A current limiter circuit limits a current in a path connecting an input terminal and an output terminal through a switch including a control port, the switch controlling the current to a predetermined value or less. The current limiter circuit includes a gate controller and a negative feedback circuit. The gate controller includes an input port which is connected to a connection point between a first path through which a first signal is transmitted and a second path through which a second signal is transmitted, and receiving the first signal and an output port supplying a control signal to the control port of the switch. The negative feedback circuit includes an input port coupled to a node via a capacitor if the capacitor is connected between thereof and the node provided between the switch and the output terminal and an output port connected to the input port.

Abstract: A sensor device includes: a sensor element, outputting a signal; a first determination circuit, outputting an initialization signal containing a signal level corresponding to a determination result as to whether detection of a physical quantity has matched two consecutive times; a second determination circuit, including a counter which is able to, while initializing a count value if the detection of the physical quantity does not occur two consecutive times, continue counting if the detection of the physical quantity occurs two consecutive times until a set number of times is reached, the second determination circuit outputting an output latch signal containing a signal level corresponding to whether a consecutive match occurs until the set number of times is reached; and an output register, switching a signal level of an output signal supplied to an output terminal according to a change in the signal level of the output latch signal.

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, and a vertical Hall element provided on the semiconductor substrate. The vertical Hall element includes an impurity diffusion layer of a second conductivity type and three or more electrodes. The impurity diffusion layer is provided on the semiconductor substrate and has an impurity concentration which increases as a depth increases. The three or more electrodes are provided in a straight line on a surface of the impurity diffusion layer and are composed of an impurity region of the second conductivity type having a higher concentration than the impurity diffusion layer.

Abstract: A current detection device includes a main busbar and a semiconductor chip. A detected current flows through the main busbar. The semiconductor chip is spaced apart from the main busbar. The semiconductor chip includes a branch busbar, a detection part, and an output part. The branch busbar is connected in parallel with the main busbar. The detection part is arranged adjacent to the branch busbar and detects a first magnetic field generated based on a branch current flowing from the main busbar to the branch busbar. The output part calculates and outputs a current value based on the first magnetic field detected by the detection part.

Abstract: A serial communication interface device includes a converter, a transmitter, and a receiver. The converter generates a first signal and a second signal based on changes in a clock signal, and a third signal and a fourth signal based on changes in a data signal, converts into the clock signal and the data signal based on the first to the fourth signals, sets the transmission start signal in response to receiving the fourth signal during a period where the clock signal is a first level, and sets the transmission end signal in response to reception of the third signal after reception of the first signal. The transmitter converts the first to the fourth signals into a communication signal and transmits the communication signal to a communication line. The receiver converts the communication signal received from the communication line into the first to the fourth signals.

Abstract: The present invention provides a reference voltage generation device which includes a constant current circuit outputting a constant current in response to an input voltage; a voltage generation circuit connected in series to the constant current circuit, using the constant current as an input current, and generating an output voltage based on the input current; and a reference voltage output port outputting the output voltage. In the constant current circuit, multiple depletion type MOS transistors are connected in series, the gate widths are the same, and the sum of the gate lengths is the total gate length of the constant current circuit. In the voltage generation circuit, multiple enhancement type MOS transistors are connected in series, the gate widths are the same, and the sum of the gate lengths is the total gate length of the voltage generation circuit.

Abstract: A cell number determination device, a charge and discharge control device, and a battery device with small circuit scale are provided. The cell number determination device includes: multiple differential amplifiers provided corresponding to multiple cells in a battery pack, of which the cell number is changeable, equipped with multiple cells connected in series; and multiple output circuits provided corresponding to the differential amplifiers. An input differential pair of the differential amplifiers includes a heteropolar gate NMOS transistor and an NMOS transistor.

Abstract: A capacitive element 100 includes a P-type semiconductor substrate 110, a capacitor structure 150 formed above the P-type semiconductor substrate 110, and a shielding layer 130 formed between the P-type semiconductor substrate 110 and the capacitor structure 150 and electrically connected to the P-type semiconductor substrate 110. Preferably, a pair of electrodes 150a and 150b in the capacitor structure 150 are at a first potential V1 and a second potential V2 respectively, and the P-type semiconductor substrate 110 and the shielding layer 130 are at a third potential V3.

Abstract: The voltage regulator includes: an error amplification circuit, outputting a signal amplifying a difference between a reference voltage and a feedback voltage; a source ground amplification circuit, amplifying the signal supplied from the error amplification circuit and outputting the signal as a control signal; and an output transistor, including a gate to which the control signal is supplied and outputting an output voltage. The source ground amplification circuit includes: a phase advance compensation circuit, containing a resistor and a capacitor; a load, containing a resistor and an offset generation element generating an offset voltage; and a transistor, containing: a gate receiving the signal output from the error amplification circuit; a source being connected with a first end of the resistor and a first end of the capacitor, the resistor and the capacitor being contained in the phase advance compensation circuit; and a drain connected with the load.

Abstract: A DC-DC converter is provided. The DC-DC converter includes terminals; a charge pump circuit including an oscillation circuit and provided between the terminal and the terminal; a comparison circuit including a comparator that has a hysteresis characteristic and outputs an oscillation on-off control signal that controls switching between ON and OFF of the oscillation operation of the oscillation circuit based on a magnitude relationship between a voltage proportional to the output voltage between the terminals and a first reference voltage; and a comparison circuit that outputs a control signal that controls the oscillation operation of the oscillation circuit based on a voltage proportional to the input voltage between the terminals and a second reference voltage.

Abstract: A current detection circuit includes: an input port; an output port; a rectifying element; a capacitor; a first first conductivity type MOS transistor; and a voltage detection circuit. The input port is connected to an anode terminal of the rectifying element, the drain terminal of the first first conductivity type MOS transistor, and a voltage detection terminal of the voltage detection circuit. A cathode terminal of the rectifying element is connected to a first terminal of the capacitor and a gate terminal of the first first conductivity type MOS transistor. A second terminal of the capacitor and a source terminal of the first first conductivity type MOS transistor are connected to a first power source terminal. A detection result output port of the voltage detection circuit 105 is connected to the output port.

Abstract: A controller includes: first to third input terminals; connection terminals; an output terminal; a first rectifying element, connected between the first input terminal and the second input terminal with a direction from the second input terminal to the first input terminal as a forward direction; a second rectifying element, connected between a connection point between the first input terminal and the first rectifying element and the output terminal with a direction from the connection point to the output terminal as a forward direction; an FET circuit, including a first depletion type FET and at least one other FET; a resistor, connected to the second input terminal and the third input terminal; and a clamp circuit, clamping a voltage of the third input terminal to a predetermined voltage.

Abstract: A voltage fluctuation detection circuit includes: a source voltage decrease detection circuit configured to detect a decrease in voltage of a first power supply which outputs a first voltage and to output the result of detection as a voltage decrease detection signal using a second voltage which is lower than the voltage of the first power supply; an erroneous detection prevention circuit configured to detect an increase in voltage of the first power supply and to output the result of detection as a voltage increase detection signal using the second voltage; and a transistor configured to mask outputting of the voltage decrease detection signal in a period in which the increase in voltage of the first power supply is being detected based on the voltage increase detection signal.

Abstract: A semiconductor device includes an input port, a pulse generation circuit, and a serial-parallel conversion circuit. The input port is connected to an input port of the pulse generation circuit and a data signal input port of the serial-parallel conversion circuit. A signal received at the input port is a start bit and a data signal. The pulse generation circuit includes a delay circuit. A clock signal output port of the pulse generation circuit is connected to a clock signal input port of the serial-parallel conversion circuit.

Abstract: A DC/DC converter is able to test an overcurrent detection circuit without damaging the circuit. The DC/DC converter includes: a high-side switch; an IV conversion element and a current detection transistor which are connected in parallel with the high-side switch; a low-side switch; an overcurrent detection circuit; and a control circuit which outputs a first signal from a first output port to the high-side switch, outputs a second signal from the second output port to the low-side switch, and outputs a third signal from a third output port to the current detection transistor. The DC/DC converter further includes a test port which controls the current detection transistor to be turned off in the case of testing the overcurrent detection circuit, and supplies a variable current to a connection point between the current detection transistor which is controlled to be turned off and the IV conversion element.

Abstract: A temperature sensor device is capable of measuring minute temperature changes while being manufactured at low cost without needing a high performance IC tester. A temperature sensor device includes a temperature sensor circuit 2 and a temperature sensor 1. The temperature sensor 1 includes a PN junction element 15 which is a temperature sensing element, a variable current source which supplies different forward currents of at least two values to the PN junction element 15 and a constant voltage source 16 which outputs a constant voltage having the same temperature properties as a forward voltage of the PN junction element 15.

Abstract: A low pass filter and a semiconductor device including the low pass filter are capable of quickly reaching a steady state upon power-on. The low pass filter includes a first first-conductivity-type MOS transistor, an electrostatic capacitor, a buffer circuit, a bias circuit, an input terminal, and an output terminal. The input terminal is connected to a source terminal of the first first-conductivity-type MOS transistor. A drain terminal of the first first-conductivity-type MOS transistor is connected to a first terminal of the electrostatic capacitor, the output terminal, and an input terminal of the buffer circuit. An output terminal of the buffer circuit is connected to an input terminal of the bias circuit. An output terminal of the bias circuit is connected to a gate terminal of the first first-conductivity-type MOS transistor.

Abstract: Provided is an overheat protection circuit with improved accuracy of overheat detection. The overheat protection circuit includes: an input terminal; an output terminal; a first transistor containing a first terminal, a second terminal, and a control terminal, the first transistor being switchable between ON and OFF; and a first NPN transistor containing a base to be connected to a node between the second terminal of the first transistor and the ground terminal, an emitter to be connected to the ground terminal, and a collector to be supplied with a constant current and connected to the output terminal, the first NPN transistor being switchable between ON and OFF in accordance with a voltage level of a reference voltage to be supplied to the base, the reference voltage having a temperature characteristic of having a temperature coefficient of zero or more.

Abstract: A ribbon-type electrode and a ribbon-type sensor are capable of long-term sensing. The ribbon-type electrode includes an electrode section, which contains a first electrode and a second electrode. The first electrode which contains a thin plate-like structure containing a first type of metal having a higher ionization tendency than hydrogen and the second electrode are disposed to face each other with respect to a plane formed by a length direction and a width direction of the first electrode with an insulating section made of non-conductive fibers interposed therebetween.

Abstract: Provided is a battery-less sensor circuit including a power generation element, a first switching element, a voltage control circuit, a first storage capacitor, a sensor circuit, and a load. The power generation element is connected to the first storage capacitor via the first switching element. A power supply terminal of the sensor circuit is connected to an input terminal of the first switching element. The voltage control circuit is configured to control a current passing through the first switching element through reception of a voltage of the input terminal of the first switching element. The load is connected to the first storage capacitor and the sensor circuit.