Patents Assigned to ACM Research (Shanghai) Inc.
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Publication number: 20230143401Abstract: Methods and an apparatus for removing particles or photoresist on substrates. In an embodiment, a method comprises the following steps: transferring one or more substrates into a DIO3 solution accommodated in a DIO3 bath; after the one or more substrates are processed in the DIO3 bath, taking the one or more substrates out from the DIO3 bath and transferring the one or more substrates into a SPM solution accommodated in a SPM bath; after the one or more substrates are processed in the SPM bath, taking the one or more substrates out from the SPM bath and rinsing the one or more substrates; and transferring the one or more substrates to one or more single chambers to perform single substrate cleaning and drying process. The method combines DIO3 and SPM in one cleaning sequence, which can remove particles or photoresist, especially remove photoresist treated by medium dose or high dose of ion implantation.Type: ApplicationFiled: April 21, 2020Publication date: May 11, 2023Applicant: ACM RESEARCH (SHANGHAI), INC.Inventors: Xiaoyan Zhang, Wenjun Wang, Fuping Chen, Jun Wang, Shena Jia, Deyun Wang, Hui Wang, Guangyu Xia, He Wang
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Patent number: 11633765Abstract: A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.Type: GrantFiled: September 9, 2021Date of Patent: April 25, 2023Assignee: ACM Research (Shanghai) Inc.Inventors: Hui Wang, Fufa Chen, Fuping Chen, Jian Wang, Xi Wang, Xiaoyan Zhang, Yinuo Jin, Zhaowei Jia, Liangzhi Xie, Jun Wang, Xuejun Li
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Patent number: 11629425Abstract: The present invention relates to applying at least one ultra/mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.Type: GrantFiled: February 1, 2021Date of Patent: April 18, 2023Assignee: ACM RESEARCH (SHANGHAI), INC.Inventors: Hui Wang, Fuping Chen, Xi Wang
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Patent number: 11626297Abstract: An apparatus and a method for wet process on a semiconductor substrate are provided. The apparatus includes a process chamber (1005), a chuck (1002) for holding and positioning a semiconductor substrate (1001) disposed in the process chamber, a rotating driving mechanism (1004) driving the chuck to rotate, a chamber shroud (1006) disposed surrounding the process chamber, at least one vertical driving mechanism driving the chamber shroud to move up or down, a shielding cover (1007), at least one driving device (1008) driving the shielding cover to cover down or lift up, at least one dispenser module (1014) having a dispenser (1030) for spraying liquid to the surface of the semiconductor substrate. When the shielding cover covers above the process chamber, the chamber shroud is moved up to couple with the shielding cover, so as to seal the process chamber for preventing the liquid from splashing out of the process chamber.Type: GrantFiled: October 25, 2016Date of Patent: April 11, 2023Assignee: ACM RESEARCH (SHANGHAI), INC.Inventors: Hui Wang, Xi Wang, Cheng Cheng, Jun Wu
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Patent number: 11498100Abstract: An apparatus for cleaning semiconductor substrates including a chamber, a chuck, a liquid collector, an enclosing wall, at least one driving mechanism, at least one internal dispenser, and at least one external dispenser. The chamber has a top wall, a side wall and a bottom wall. The chuck is disposed in the chamber. The liquid collector surrounds the chuck. The enclosing wall surrounds the liquid collector. The driving mechanism drives the enclosing wall to move up and down, wherein when the enclosing wall is driven to move up, a seal room is formed by the liquid collector, the enclosing wall, the top wall and bottom wall of the chamber. The internal dispenser is disposed inside the seal room. The external dispenser is disposed outside the seal room and capable of getting in and out of the seal room after the enclosing wall is driven to move down.Type: GrantFiled: March 6, 2017Date of Patent: November 15, 2022Assignee: ACM RESEARCH (SHANGHAI) INC.Inventors: Hui Wang, Xiaofeng Tao, Fuping Chen, Shena Jia, Xi Wang, Xiaoyan Zhang, Xuejun Li
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Publication number: 20220351962Abstract: A method for cleaning a substrate with pattern structures comprises the following steps: using gas-liquid atomization to clean a substrate surface (601); using TEBO megasonic to clean the substrate surface (602); and drying the substrate (603). The TEBO megasonic cleaning is used to remove small size particles on the substrate and the gas-liquid atomization cleaning is used to remove large size particles on the substrate. The method enables achieving an effect of cleaning the substrate without or with less device damage. A substrate cleaning apparatus is also provided.Type: ApplicationFiled: November 1, 2019Publication date: November 3, 2022Applicant: ACM Research (Shanghai) Inc.Inventors: Wenjun Wang, Ting Yao, Xiaoyan Zhang, Fuping Chen, Hui Wang
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Patent number: 11469134Abstract: A plating chuck for holding a substrate during plating processes, wherein the substrate has a notch area (3031) and a patterned region (3032) adjacent to the notch area (3031). The plating chuck comprises a cover plate (3033) configured to cover the notch area (3031) of the substrate to shield the electric field at the notch area (3031) when the substrate is being plated.Type: GrantFiled: September 7, 2017Date of Patent: October 11, 2022Assignee: ACM RESEARCH (SHANGHAI) INC.Inventors: Hui Wang, Jian Wang, Zhaowei Jia, Hongchao Yang
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Patent number: 11462423Abstract: A method and apparatus for cleaning semiconductor wafer, combining batch cleaning and single wafer cleaning together. The method includes: taking at least two wafers from a cassette in a load port and putting said wafers into a first tank filled with chemical solution; after processing said wafers in the first tank, taking said wafers out of the first tank and keeping said wafers wet; putting said wafers into a second tank filled with liquid; after processing said wafers in the second tank, taking said wafers out of the second tank and keeping said wafers wet; putting one of said wafers on a chuck inside a single wafer cleaning module; rotating the chuck while applying chemical solution on said wafer; applying deionized water on said wafer; drying said wafer; taking said wafer out of the single wafer cleaning module and putting said wafer back to the cassette in the load port.Type: GrantFiled: April 8, 2019Date of Patent: October 4, 2022Assignee: ACM Research (Shanghai) Inc.Inventors: Hui Wang, Fuping Chen, Liangzhi Xie, Shena Jia, Xi Wang, Xiaoyan Zhang
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Publication number: 20220246420Abstract: A method for cleaning semiconductor wafer includes putting at least one wafer on a cassette bracket in a first cleaning tank filled with chemical solution; after said wafers have been processed in the first cleaning tank, transferring the wafers from the first cleaning tank to a second cleaning tank with the wafers immersing in the chemical solution; and after said wafers have been processed in the second cleaning tank, taking the wafers out of the second cleaning tank.Type: ApplicationFiled: April 20, 2022Publication date: August 4, 2022Applicant: ACM Research (Shanghai) Inc.Inventors: Hui Wang, Xi Wang, Fuping Chen
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Patent number: 11335550Abstract: Provided are an apparatus and a method which ensure the wafers immersing in the chemical solution from one cleaning tank to the other cleaning tanks. The apparatus includes an inner tank (1001); at least one divider (1002) for dividing the inner tank (1001) into at least two cleaning tanks filled with chemical solution; a first robot (1005) equipped with at least a pair of end effectors (1051) for gripping and taking a wafer from a first cleaning tank (1011) to a second cleaning tank (1012); wherein each cleaning tank is provided with a cassette bracket (1003) in the bottom for holding wafers, and the at least one divider (1002) is provided with at least one slot (1004)< wherein the first robot (1005) grips and takes the wafer from the first cleaning tank (1011) to the second cleaning tank (1012) through the slot (1004) while keeping the wafer immersing.Type: GrantFiled: September 8, 2017Date of Patent: May 17, 2022Assignee: ACM Research (Shanghai) Inc.Inventors: Hui Wang, Xi Wang, Fuping Chen
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Publication number: 20220139697Abstract: A method for cleaning semiconductor substrate without damaging patterned structure on the semiconductor substrate using ultra/mega sonic device comprises applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive the ultra/mega sonic device; before bubble cavitation in the liquid damaging patterned structure on the substrate, setting the ultra/mega sonic power supply at zero output; after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency f1 and power P1 again; detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply; comparing the detected power on time with a preset time ?1, or comparing the detected power off time with a preset time ?2, or comparing detected amplitude of each waveform with a preset value, if the detected power on timeType: ApplicationFiled: January 13, 2022Publication date: May 5, 2022Applicant: ACM Research (Shanghai) Inc.Inventors: Jun WANG, Hui WANG, Fufa CHEN, Fuping CHEN, Jian WANG, Xi WANG, Xiaoyan ZHANG, Yinuo JIN, Zhaowei JIA, Liangzhi XIE, Xuejun LI
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Patent number: 11298727Abstract: A substrate cleaning apparatus, including a chuck assembly, at least one first nozzle (107,207), and an ultra or mega sonic device (206,306). The chuck assembly is configured to receive and clamp a substrate. The at least one first nozzle (107,207) is configured to spray liquid onto the top surface of the substrate. The ultra or mega sonic device (206,306) is configured to dispose above the top surface of the substrate for providing an ultra or mega sonic cleaning to the substrate. A gap is formed between the ultra or mega sonic device (206,306) and the top surface of the substrate, and the gap is fully and continuously filled with the liquid so that the entire underneath of the ultra or mega sonic device (206,306) is filled with the liquid all the time during the cleaning process.Type: GrantFiled: March 30, 2017Date of Patent: April 12, 2022Assignee: ACM Research (Shanghai) Inc.Inventors: Hui Wang, Jun Wu, Cheng Cheng, Xi Wang, Zhenming Chu
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Publication number: 20220081796Abstract: A plating apparatus and plating methods for plating metal layers on a substrate.Type: ApplicationFiled: December 28, 2018Publication date: March 17, 2022Applicant: ACM Research (Shanghai) Inc.Inventors: Yinuo Jin, Hongchao Yang, Jian Wang, Hui Wang
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Patent number: 11257667Abstract: A method for cleaning a semiconductor substrate without damaging its patterned structure via an ultra/mega sonic device comprises applying liquid into a space between the substrate and the sonic device; setting an ultra/mega sonic device power supply at a frequency f1 and power P1; and at zero output before bubble cavitation occurs; followed by at f1 and P1 again after bubble temperature is lowered; detecting power on time (at P1, f1), power off time or amplitude of each waveform output by the power supply; comparing the detected power on time with a preset time T1, power off time with a preset time ?2, amplitude of each waveform with a preset value, if the detected power on time is longer than ?1, or power off time is shorter than ?2, or amplitude of any waveform is larger than the preset value, shut down the power supply and send out an alarm.Type: GrantFiled: April 6, 2016Date of Patent: February 22, 2022Assignee: ACM Research (Shanghai) Inc.Inventors: Jun Wang, Hui Wang, Fufa Chen, Fuping Chen, Jian Wang, Xi Wang, Xiaoyan Zhang, Yinuo Jin, Zhaowei Jia, Liangzhi Xie, Xuejun Li
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Publication number: 20220037172Abstract: The present invention discloses a method for cleaning substrate without damaging patterned structure on the substrate using ultra/mega sonic device, comprising: applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; after micro jet generated by bubble implosion and before said micro jet generated by bubble implosion damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned.Type: ApplicationFiled: June 14, 2021Publication date: February 3, 2022Applicant: ACM Research (Shanghai) Inc.Inventors: Hui WANG, Xi WANG, Fuping CHEN, Fufa CHEN, Jian WANG, Xiaoyan ZHANG, Yinuo JIN, Zhaowei JIA, Jun WANG, Xuejun LI
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Publication number: 20210402444Abstract: A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.Type: ApplicationFiled: September 9, 2021Publication date: December 30, 2021Applicant: ACM Research (Shanghai) Inc.Inventors: Hui WANG, Fufa CHEN, Fuping CHEN, Jian WANG, Xi WANG, Xiaoyan ZHANG, Yinuo JIN, Zhaowei JIA, Liangzhi XIE, Jun WANG, Xuejun LI
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Patent number: 11141762Abstract: A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.Type: GrantFiled: November 15, 2017Date of Patent: October 12, 2021Assignee: ACM Research (Shanghai), Inc.Inventors: Hui Wang, Fufa Chen, Fuping Chen, Jian Wang, Xi Wang, Xiaoyan Zhang, Yinuo Jin, Zhaowei Jia, Liangzhi Xie, Jun Wang, Xuejun Li
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Publication number: 20210301416Abstract: Embodiments of the present invention provide an electroplating apparatus for electroplating on a surface of a wafer, the electroplating apparatus comprising a plurality of electrodes, the plurality of electrodes forming electric fields on the surface of the wafer, wherein an independent electric field is formed in a designated area, the intensity of the independent electric field is independently controlled, when a notch of the wafer is positioned within the designated area, a total amount of power received by the notch within the designated area is reduced.Type: ApplicationFiled: April 29, 2019Publication date: September 30, 2021Applicant: ACM Research (Shanghai) Inc.Inventors: Zhaowei JIA, Jian WANG, Hui WANG, Hongchao YANG
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Publication number: 20210249257Abstract: Methods and apparatuses for cleaning semiconductor wafers(202).Type: ApplicationFiled: June 7, 2018Publication date: August 12, 2021Applicant: ACM Research (Shanghai) Inc.Inventors: Hui Wang, Zhiyou Fang, Jun Wu, Guanzhong Lu, Fuping Chen, Jian Wang, Jun Wang, Deyun Wang
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Publication number: 20210236961Abstract: The present invention provides a high temperature chemical solution supply system for cleaning substrates. The system includes a solution tank, a buffer tank, a first pump and a second pump. The solution tank contains high temperature chemical solution. The buffer tank has a tank body, a vent line and a needle valve. The tank body contains the high temperature chemical solution. An end of the vent line connects to the tank body, and the other end of the vent line connects to the solution tank. The needle valve is mounted on the vent line, wherein the needle valve is adjusted to reach a flow rate to vent gas bubbles inside of the high temperature chemical solution out of the buffer tank through the vent line. An inlet of the first pump connects to the solution tank, and an outlet of the first pump connects to the buffer tank. An inlet of the second pump connects to the buffer tank, and an outlet of the second pump connects to a cleaning chamber in which a substrate is cleaned.Type: ApplicationFiled: April 19, 2021Publication date: August 5, 2021Applicant: ACM Research (Shanghai) Inc.Inventors: Fuping Chen, Hui Wang, Xi Wang, Shena Jia, Danying Wang, Chaowei Jiang, Yingwei Dai, Jian Wang