Patents Assigned to ACM Research (Shanghai) Inc.
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Publication number: 20190273003Abstract: A method and apparatus for cleaning semiconductor wafer, combining batch cleaning and single wafer cleaning together. The method includes: taking at least two wafers from a cassette in a load port and putting said wafers into a first tank filled with chemical solution; after processing said wafers in the first tank, taking said wafers out of the first tank and keeping said wafers wet; putting said wafers into a second tank filled with liquid; after processing said wafers in the second tank, taking said wafers out of the second tank and keeping said wafers wet; putting one of said wafers on a chuck inside a single wafer cleaning module; rotating the chuck while applying chemical solution on said wafer; applying deionized water on said wafer; drying said wafer; taking said wafer out of the single wafer cleaning module and putting said wafer back to the cassette in the load port.Type: ApplicationFiled: April 8, 2019Publication date: September 5, 2019Applicant: ACM Research (Shanghai) Inc.Inventors: Hui Wang, Fuping Chen, Liangzhi Xie, Shena Jia, Xi Wang, Xiaoyan Zhang
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Publication number: 20190252215Abstract: An apparatus for cleaning a semiconductor wafer comprises a chuck (106), an ultra or mega sonic device, an actuator (113), at least one dispenser (108, 209) and a rotating driving mechanism (111). The chuck (106) holds the semiconductor wafer (105). The actuator (113) drives the ultra or mage sonic device to a position above the surface of the semiconductor wafer (105) and a gap is formed between the ultra or mega sonic device and the surface of the semiconductor wafer (105). The at least one dispenser (108, 209) sprays cleaning liquid on the surface of the semiconductor wafer (105).Type: ApplicationFiled: October 25, 2016Publication date: August 15, 2019Applicant: ACM Research (Shanghai) Inc.Inventors: Hui Wang, Xi Wang, Zhenming Chu, Fuping Chen
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Publication number: 20190244837Abstract: An apparatus for cleaning flip chip assemblies is provided. The apparatus comprises: a chuck assembly; a motor coupled to the chuck assembly by a spindle; at least one carrier for holding flip chips; at least one spray nozzle for directing DIW, a cleaning solution, a gas or a vapor. Embodiments of the invention further provide methods for cleaning flip chip assemblies. The method comprises: loading at least one flip chip to the flip chip carriers; rotating the chuck assembly at a rotation speed; flowing DIW for rinsing the flip chips; flowing a cleaning solution for removing the contaminants; applying ultrasonic/megasonic energy to the flip chips; blowing a gas or a vapor via the spray nozzles for drying the flip chips; bringing the flip chips out of the flip chip carriers.Type: ApplicationFiled: April 19, 2019Publication date: August 8, 2019Applicant: ACM Research (Shanghai) Inc.Inventors: Xiaoyan Zhang, Fuping Chen, Hui Wang
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Publication number: 20190244836Abstract: An apparatus and a method for wet process on a semiconductor substrate are provided. The apparatus includes a process chamber (1005), a chuck (1002) for holding and positioning a semiconductor substrate (1001) disposed in the process chamber, a rotating driving mechanism (1004) driving the chuck to rotate, a chamber shroud (1006) disposed surrounding the process chamber, at least one vertical driving mechanism driving the chamber shroud to move up or down, a shielding cover (1007), at least one driving device (1008) driving the shielding cover to cover down or lift up, at least one dispenser module (1014) having a dispenser (1030) for spraying liquid to the surface of the semiconductor substrate. When the shielding cover covers above the process chamber, the chamber shroud is moved up to couple with the shielding cover, so as to seal the process chamber for preventing the liquid from splashing out of the process chamber.Type: ApplicationFiled: October 25, 2016Publication date: August 8, 2019Applicant: ACM Research (Shanghai) Inc.Inventors: Hui Wang, Xi Wang, Cheng Cheng, Jun Wu
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Patent number: 10297472Abstract: A method and apparatus (100) for cleaning semiconductor wafer are provided, combining batch cleaning and single wafer cleaning together.Type: GrantFiled: November 28, 2012Date of Patent: May 21, 2019Assignee: ACM Research (Shanghai) Inc.Inventors: Hui Wang, Fuping Chen, Liangzhi Xie, Shena Jia, Xi Wang, Xiaoyan Zhang
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Patent number: 10227705Abstract: An apparatus and a method for plating and/or polishing wafer includes a wafer chuck, an auxiliary nozzle apparatus and a main nozzle apparatus. The wafer chuck holds and positions the wafer, moves horizontally, and rotates. The auxiliary nozzle apparatus supplies uncharged or charged electrolyte to cover the outer edge of the wafer and the wafer chuck, and the main nozzle apparatus supplies charged electrolyte to the surface of the wafer, to improve the plating and/or polishing uniformity of the outer edge of the wafer, reduce the entire electric resistance of the apparatus, and improve the plating and/or polishing rate.Type: GrantFiled: May 9, 2013Date of Patent: March 12, 2019Assignee: ACM Research (Shanghai) Inc.Inventors: Jian Wang, Yinuo Jin, Hongchao Yang, Hui Wang
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Patent number: 10217662Abstract: A method for processing an interconnection structure for minimizing barrier sidewall recess, comprises the following steps: step 1, remove a metal layer (408) to generate a uniform dishing value inside the recessed area (409), the uniform dishing value is generated to make sure that the top surface of the metal layer (408) in the recessed area (409) is aligned with the bottom surface of the hard mask layer (405), step 2, introduce noble-gas-halogen compound gas to remove a first barrier layer (406) on top surface and at least a portion of a second barrier layer (407) on sidewall by a gas phase chemical reaction process, the top surface of the second barrier layer (407) on sidewall is aligned with the bottom surface of the hard mask layer (405), step 3, introduce oxidizing gas to generate a barrier surface oxide (411) on the top surface of the second barrier layer (407) on sidewall, a metal surface oxide (412) is generated at the same time, step 4, introduce noble-gas-halogen compound gas to remove hard mask lType: GrantFiled: August 12, 2015Date of Patent: February 26, 2019Assignee: ACM Research (Shanghai) Inc.Inventors: Zhaowei Jia, Jian Wang, Hui Wang
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Publication number: 20190024253Abstract: The present invention relates to applying at least one ultra/mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.Type: ApplicationFiled: September 26, 2018Publication date: January 24, 2019Applicant: ACM Research (Shanghai) Inc.Inventors: Hui Wang, Fuping Chen, Xi Wang
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Publication number: 20180353876Abstract: The present invention provides a high temperature chemical solution supply system for cleaning substrates. The system includes a solution tank, a buffer tank, a first pump and a second pump. The solution tank contains high temperature chemical solution. The buffer tank has a tank body, a vent line and a needle valve. The tank body contains the high temperature chemical solution. An end of the vent line connects to the tank body, and the other end of the vent line connects to the solution tank. The needle valve is mounted on the vent line, wherein the needle valve is adjusted to reach a flow rate to vent gas bubbles inside of the high temperature chemical solution out of the buffer tank through the vent line. An inlet of the first pump connects to the solution tank, and an outlet of the first pump connects to the buffer tank. An inlet of the second pump connects to the buffer tank, and an outlet of the second pump connects to a cleaning chamber in which a substrate is cleaned.Type: ApplicationFiled: December 9, 2015Publication date: December 13, 2018Applicant: ACM Research (Shanghai) Inc.Inventors: Fuping Chen, Hui Wang, Xi Wang, Shena Jia, Danying Wang, Chaowei Jiang, Yingwei Dai, Jian Wang
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Patent number: 10141205Abstract: An apparatus and method for cleaning semiconductor wafer are provided. The apparatus includes a brush module, a swing arm, a rotating actuator and an elevating actuator. The brush module has a brush head for providing mechanical force on a surface of a wafer. An end of the swing arm mounts the brush module. The rotating actuator is connected with the other end of the swing arm. The rotating actuator drives the swing arm to swing across the whole surface of the wafer, which brings the brush head moving across the whole surface of the wafer. The elevating actuator is connected with the other end of the swing arm. The elevating actuator drives the swing arm to rise or descend, which brings the brush module rising or descending. The apparatus cleans the semi-conductor wafer by means of the brush head, which improves the cleaning effect.Type: GrantFiled: September 26, 2014Date of Patent: November 27, 2018Assignee: ACM Research (Shanghai) Inc.Inventors: Xi Wang, Cheng Cheng, Jun Wu, Hui Wang
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Publication number: 20180320285Abstract: An apparatus for holding a substrate (113) has a chuck cup (101), a seal shell (111), a chuck plate (102) and a vertical driving device (103). The seal shell (111) has a bottom wall (1111), an outer wall (1112) and an inner wall (1114). The inner wall (1114) forms a lip seal portion (1115). The bottom wall (1111) and the outer wall (1112) of the seal shell (111) respectively wrap the bottom surface and the outer surface of the base portion (1011) of the chuck cup (101). The lip seal portion (1115) wraps the supporting portion (1014) of the chuck cup (101) for sealing the edge of the front side of the substrate (113). The apparatus protects the edge of the front side of the substrate, the back side of the substrate and the chuck cup from contacting with the electrolyte solution.Type: ApplicationFiled: December 4, 2015Publication date: November 8, 2018Applicant: ACM Research (Shanghai) Inc.Inventors: Hui Wang, Zhaowei Jia, Hongchao Yang, Jun Wu, Jian Wang
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Patent number: 10113244Abstract: The present invention relates to applying at least one ultra/mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.Type: GrantFiled: April 22, 2013Date of Patent: October 30, 2018Assignee: ACM Research (Shanghai) Inc.Inventors: Hui Wang, Fuping Chen, Xi Wang
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Publication number: 20180294179Abstract: The present invention provides an apparatus for substrate bevel and backside protection. The apparatus includes a vacuum chuck (103), a protecting apparatus, a gas supplying apparatus (114), a spin actuator (115) and a vertical actuator (113). The vacuum chuck (103) holds and positions a substrate. The protecting apparatus has s base portion and a supporting portion (104). The supporting portion (104) is set close to the substrate (101). The supporting portion (104) has a plurality of injecting ports (107) for delivering gas to the gap (105) and a plurality of releasing ports (108) for releasing the gas out of the gap (105). The base portion has a plurality of gas lines (111) and each gas line (111) is connected to one injecting port (107). The gas supplying apparatus (114) supplies the gas to the gas lines (111) of the protecting apparatus.Type: ApplicationFiled: May 14, 2015Publication date: October 11, 2018Applicant: ACM Research (Shanghai) Inc.Inventors: Xi Wang, Hui Wang
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Patent number: 10059911Abstract: A method of producing washing hydrogen water in an embodiment, includes: a step of storing ammonia water in a first tank; a step of transferring the ammonia water from the first tank to a second tank; a step of diluting the transferred ammonia water with ultrapure water in the second tank; a step of mixing the diluted ammonia water into hydrogen water; and a washing step of washing an inside of the first tank by ultrapure water to remove fine particles derived from ammonia generated in the first tank.Type: GrantFiled: July 14, 2016Date of Patent: August 28, 2018Assignees: NOMURA MICRO SCIENCE CO., LTD., ACM RESEARCH (SHANGHAI), INC.Inventors: Takayuki Jizaimaru, David H. Wang
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Publication number: 20180240701Abstract: A method for processing an interconnection structure for minimizing barrier sidewall recess, comprises the following steps: step 1, remove a metal layer (408) to generate a uniform dishing value inside the recessed area (409), the uniform dishing value is generated to make sure that the top surface of the metal layer (408) in the recessed area (409) is aligned with the bottom surface of the hard mask layer (405), step 2, introduce noble-gas-halogen compound gas to remove a first barrier layer (406) on top surface and at least a portion of a second barrier layer (407) on sidewall by a gas phase chemical reaction process, the top surface of the second barrier layer (407) on sidewall is aligned with the bottom surface of the hard mask layer (405), step 3, introduce oxidizing gas to generate a barrier surface oxide (411) on the top surface of the second barrier layer (407) on sidewall, a metal surface oxide (412) is generated at the same time, step 4, introduce noble-gas-halogen compound gas to remove hard mask lType: ApplicationFiled: August 12, 2015Publication date: August 23, 2018Applicant: ACM Research (Shanghai) Inc.Inventors: Zhaowei Jia, Jian Wang, Hui Wang
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Patent number: 10020208Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5/N for each rotation of the chuck, where ? is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5?n during the cleaning process, where ? is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.Type: GrantFiled: January 27, 2017Date of Patent: July 10, 2018Assignee: ACM Research (Shanghai) Inc.Inventors: Jian Wang, Sunny Voha Nuch, Liangzhi Xie, Junping Wu, Zhaowei Jia, Yunwen Huang, Zhifeng Gao, Hui Wang
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Publication number: 20180151398Abstract: A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned. Normally, if f1=f2, then P2 is equal to zero or much less than P1; if P1=P2, then f2 is higher than f1; if the f1<f2, then, P2 can be either equal or less than P1.Type: ApplicationFiled: May 20, 2015Publication date: May 31, 2018Applicant: ACM Research (Shanghai) Inc.Inventors: Hui Wang, Fufa Chen, Fuping Chen, Jian Wang, Xi Wang, Xiaoyan Zhang, Yinuo Jin, Zhaowei Jia, Liangzhi Xie, Jun Wang, Xuejun Li
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Publication number: 20180071794Abstract: A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.Type: ApplicationFiled: November 15, 2017Publication date: March 15, 2018Applicant: ACM Research (Shanghai) Inc.Inventors: Hui Wang, Fufa Chen, Fuping Chen, Jian Wang, Xi Wang, Xiaoyan Zhang, Yinuo Jin, Zhaowei Jia, Liangzhi Xie, Jun Wang, Xuejun Li, Xi Wang
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Publication number: 20180071795Abstract: A method for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the method comprising: delivering a cleaning liquid over a surface of a semiconductor wafer during a cleaning process; and imparting sonic energy to the cleaning liquid from a sonic transducer during the cleaning process, wherein power is alternately supplied to the sonic transducer at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, the first predetermined period of time and the second predetermined period of time consecutively following one another, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.Type: ApplicationFiled: November 15, 2017Publication date: March 15, 2018Applicant: ACM Research (Shanghai) Inc.Inventors: Hui Wang, Fufa Chen, Fuping Chen, Jian Wang, Xi Wang, Xiaoyan Zhang, Yinuo Jin, Zhaowei Jia, Liangzhi Xie, Jun Wang, Xuejun Li, Xi Wang
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Publication number: 20180033654Abstract: A fall-proof apparatus for cleaning semiconductor devices is provided. The fall-proof apparatus comprises: a nozzle (102) connecting with a carrier (101); a megasonic/ultrasonic device (105) fixing on the carrier (101); and a sensor (104) detecting the distance between the megasonic/ultrasonic device (105) and the carrier (101) to determine whether the megasonic/ultrasonic device (105) is loose and going to fall. The megasonic/ultrasonic device works with the nozzle during a cleaning process. A chamber with the fall-proof apparatus is also provided.Type: ApplicationFiled: September 8, 2015Publication date: February 1, 2018Applicant: ACM Research (Shanghai) Inc.Inventors: Zhenming Chu, Xi Wang, Hui Wang, Shena Jia, Jun Wu, Fuping Chen, Xuejun Li