Abstract: A method of producing washing hydrogen water in an embodiment, includes: a step of storing ammonia water in a first tank; a step of transferring the ammonia water from the first tank to a second tank; a step of diluting the transferred ammonia water with ultrapure water in the second tank; a step of mixing the diluted ammonia water into hydrogen water; and a washing step of washing an inside of the first tank by ultrapure water to remove fine particles derived from ammonia generated in the first tank.

Abstract: The present invention provides a method for forming interconnection structures, including the following steps: providing a semiconductor wafer with a dielectric layer; forming a first recessed area for forming the interconnection structures and a non-recessed area on the dielectric layer; forming a second recessed area for forming dummy structures on the dielectric layer; depositing a barrier layer to cover the first and second recessed areas and the non-recessed area; depositing a metal layer to fill the first and second recessed areas and cover the non-recessed area; removing the metal layer on the non-recessed area to expose the barrier layer; and removing the barrier layer on the non-recessed area to expose the dielectric layer.

Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or counter clockwise.

Abstract: An apparatus and a method for plating and/or polishing wafer includes a wafer chuck, an auxiliary nozzle apparatus and a main nozzle apparatus. The wafer chuck holds and positions the wafer, moves horizontally, and rotates. The auxiliary nozzle apparatus supplies uncharged or charged electrolyte to cover the outer edge of the wafer and the wafer chuck, and the main nozzle apparatus supplies charged electrolyte to the surface of the wafer, to improve the plating and/or polishing uniformity of the outer edge of the wafer, reduce the entire electric resistance of the apparatus, and improve the plating and/or polishing rate.

Abstract: The present invention improves the wetting between process solution and the wafer surface when they are put into contact by pre-implementing an adsorbed liquid layer on the entire front surface of the wafer just prior to the process. The pre-implementing adsorbed liquid layer is realized by transporting vaporized liquid molecules from vapor phase at elevated temperature (relative to wafer) and condensing them onto wafer surface. The pre-implementing adsorbed liquid is fully filled in the patterned structures formed on the wafer by multilayer absorption of the vaporized liquid molecules and the temperature of the wafer surface is above dew point of the vaporized liquid while condensing, which avoids generating bubbles inside the patterned structures.

Abstract: The present invention relates to applying at least one ultra/mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.

Abstract: An apparatus for cleaning a surface of wafer or substrate includes a plate being positioned with a gap to surface of the wafer or substrate, and the plate being rotated around an axis vertical to surface of wafer or substrate. The rotating plate surface facing surface of the wafer or substrate has grooves, regular patterns, and irregular patterns to enhance the cleaning efficiency. Another embodiment further includes an ultra sonic or mega sonic transducer vibrating the rotating plate during cleaning process.

Abstract: A substrate supporting apparatus includes a rotatable chuck, a first mass flow controller, a second mass flow controller, a plurality of locating pins and guiding pillars, and a motor in which the rotatable chuck defines a plurality of first injecting ports and second injecting ports, the first injecting ports are connected with a first gas passage for supplying gas to the substrate and sucking the substrate by Bernoulli effect, the second injecting ports are connected with a second gas passage for supplying gas to the substrate and lifting the substrate, the first and the second mass flow controllers are respectively installed on the first and the second gas passages, the plurality of locating pins and guiding pillars are disposed at the top surface of the rotatable chuck and every guiding pillar protrudes to form a holding portion, and the motor is used for rotating the rotatable chuck.

Abstract: The present invention provides a method for forming interconnection structures, including the following steps: providing a semiconductor wafer with a dielectric layer; forming a first recessed area for forming the interconnection structures and a non-recessed area on the dielectric layer; forming a second recessed area for forming dummy structures on the dielectric layer; depositing a barrier layer to cover the first and second recessed areas and the non-recessed area; depositing a metal layer to fill the first and second recessed areas and cover the non-recessed area; removing the metal layer on the non-recessed area to expose the barrier layer; and removing the barrier layer on the non-recessed area to expose the dielectric layer.

Abstract: An apparatus for cleaning a surface of wafer or substrate includes a plate being positioned with a gap to surface of the wafer or substrate, and the plate being rotated around an axis vertical to surface of wafer or substrate. The rotating plate surface facing surface of the wafer or substrate has grooves, regular patterns, and irregular patterns to enhance the cleaning efficiency. Another embodiment further includes an ultra sonic or mega sonic transducer vibrating the rotating plate during cleaning process.

Abstract: A method and apparatus for pulse electrochemical polishing a wafer are disclosed. The method comprises steps of: establishing a duty cycle table showing all points on the wafer, a removal thickness corresponding to every point and a duty cycle corresponding to the removal thickness; driving a wafer chuck holding and positioning the wafer to move at a preset speed so that a special point on the wafer is right above a nozzle ejecting charged electrolyte onto the wafer; looking up the duty cycle table and obtaining the removal thickness and the duty cycle corresponding to the special point; and applying a preset pulse power source to the wafer and the nozzle and the actual polishing power source for polishing the special point being equal to the duty cycle multiplying by the preset power source.

Abstract: A nozzle for charging and ejecting electrolyte in SFP process is disclosed. The nozzle includes an insulated foundation defining a through-hole, a conductive body as negative electrode connecting with a power source for charging the electrolyte and an insulated nozzle head. The conductive body has a fixing portion located on the insulated foundation. The fixing portion protrudes to form a receiving portion inserted into the through-hole and defining a receiving hole passing therethrough and the fixing portion. The insulated nozzle head has a cover stably assembled with the insulated foundation above the conductive body and a tube extending through the cover and defining a main fluid path through where the charged electrolyte is ejected for polishing. The tube is inserted in the receiving hole and stretches out of the receiving hole of the conductive body. An auxiliary fluid path is formed between an inner circumferential surface of the receiving portion and an outer circumferential surface of the tube.

Abstract: A vacuum chuck is disclosed for holding and positioning wafers more stably and securely. The vacuum chuck includes a supporting assembly having a receiving groove and at least one first vacuum aperture defined in the receiving groove. A seal unit includes a seal ring bulging to form a vacuum trough. The seal ring is fixed in the receiving groove of the supporting assembly and has at least one second vacuum aperture communicating with the first vacuum aperture. A chuck connector fastened with the supporting assembly has at least one vacuum port and at least one vacuum orifice communicating with the vacuum port. At least one vacuum hose connects the first vacuum aperture, the second vacuum aperture with the vacuum orifice and the vacuum port of the chuck connector for evacuating the air of the vacuum trough to hold and position the wafer on the seal ring and the supporting assembly.

Abstract: An apparatus for cleaning flip chip assemblies is provided. The apparatus comprises: a chuck assembly; a motor coupled to the chuck assembly by a spindle; at least one carrier for holding flip chips; at least one spray nozzle for directing DIW, a cleaning solution, a gas or a vapor. Apparatus of the invention further provides a method for cleaning flip chip assemblies. The method comprises: loading at least one flip chip to the flip chip carriers; rotating the chuck assembly at a rotation speed; flowing DIW for rinsing the flip chips; flowing a cleaning solution for removing the contaminants; applying ultrasonic/megasonic energy to the flip chips; blowing a gas or a vapor via the spray nozzles for drying the flip chips; bringing the flip chips out of the flip chip carriers.

Abstract: An apparatus for substrate metallization from electrolyte is provided. The apparatus comprises: an immersion cell containing metal salt electrolyte; at least one electrode connecting to at least one power supply; an electrically conductive substrate holder holding at least one substrate to expose a conductive side of the substrate to face the at least one electrode; an oscillating actuator for oscillating the substrate holder with an amplitude and a frequency; at least one ultrasonic device with an operating frequency and an intensity, disposed in the metallization apparatus; at least one ultrasonic power generator connecting to the ultrasonic device; at least one inlet for metal slat electrolyte feeding; and at least one outlet for metal salt electrolyte draining.

Abstract: The present invention improves the wetting between process solution and the wafer surface when they are put into contact by pre-implementing an adsorbed liquid layer on the entire front surface of the wafer just prior to the process. The pre-implementing adsorbed liquid layer is realized by transporting vaporized liquid molecules from vapor phase at elevated temperature (relative to wafer) and condensing them onto wafer surface. The pre-implementing adsorbed liquid is fully filled in the patterned structures formed on the wafer by multilayer absorption of the vaporized liquid molecules and the temperature of the wafer surface is above dew point of the vaporized liquid while condensing, which avoids generating bubbles inside the patterned structures.

Abstract: An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.

Abstract: A method and apparatus integrating semiconductor manufacturing processes of stress free electrochemical copper polishing (SFP), removal of the Tantalum oxide or Titanium oxide formed during SFP process and XeF2 gas phase etching barrier layer Ta/TaN or Ti/TiN process. Firstly, at least a portion of the plated copper film is polished by SFP. Secondly the barrier metal oxide film formed during SFP process is etched away by etchant. Finally, the barrier layer Ta/TaN or Ta/TiN is removed with XeF2 gas phase etching. The apparatus accordingly consists of three sub systems: stress free copper electropolishing system, barrier layer oxide film removal system and barrier layer Ta/TaN or Ti/TiN gas phase etching system.

Abstract: An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.

Abstract: This invention relates to a method and apparatus by integrating semiconductor manufacturing processes of stress free electrochemical copper polishing (SFP), removal of the Tantalum oxide or Titanium oxide formed during SFP process and XeF2 gas phase etching barrier layer Ta/TaN or Ti/TiN process. Firstly, at least portion of plated copper film is polished by SFP. Secondly the barrier metal oxide film formed during SFP process is etched away by etchant. Finally, the barrier layer Ta/TaN or Ta/TiN is removed with XeF2 gas phase etching. The apparatus accordingly consists of three sub systems: stress free copper electropolishing system, barrier layer oxide film removal system and barrier layer Ta/TaN or Ti/TiN gas phase etching system.