Abstract: A substrate cleaning apparatus, including a chuck assembly, at least one first nozzle (107,207), and an ultra or mega sonic device (206,306). The chuck assembly is configured to receive and clamp a substrate. The at least one first nozzle (107,207) is configured to spray liquid onto the top surface of the substrate. The ultra or mega sonic device (206,306) is configured to dispose above the top surface of the substrate for providing an ultra or mega sonic cleaning to the substrate. A gap is formed between the ultra or mega sonic device (206,306) and the top surface of the substrate, and the gap is fully and continuously filled with the liquid so that the entire underneath of the ultra or mega sonic device (206,306) is filled with the liquid all the time during the cleaning process.

Abstract: Provided are an apparatus and a method which ensure the wafers immersing in the chemical solution from one cleaning tank to the other cleaning tanks. The apparatus includes an inner tank (1001); at least one divider (1002) for dividing the inner tank (1001) into at least two cleaning tanks filled with chemical solution; a first robot (1005) equipped with at least a pair of end effectors (1051) for gripping and taking a wafer from a first cleaning tank (1011) to a second cleaning tank (1012); wherein each cleaning tank is provided with a cassette bracket (1003) in the bottom for holding wafers, and the at least one divider (1002) is provided with at least one slot (1004)< wherein the first robot (1005) grips and takes the wafer from the first cleaning tank (1011) to the second cleaning tank (1012) through the slot (1004) while keeping the wafer immersing.

Abstract: The present invention relates to applying at least one ultra/mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.

Abstract: An apparatus for holding a substrate (113) has a chuck cup (101), a seal shell (111), a chuck plate (102) and a vertical driving device (103). The seal shell (111) has a bottom wall (1111), an outer wall (1112) and an inner wall (1114). The inner wall (1114) forms a lip seal portion (1115). The bottom wall (1111) and the outer wall (1112) of the seal shell (111) respectively wrap the bottom surface and the outer surface of the base portion (1011) of the chuck cup (101). The lip seal portion (1115) wraps the supporting portion (1014) of the chuck cup (101) for sealing the edge of the front side of the substrate (113). The apparatus protects the edge of the front side of the substrate, the back side of the substrate and the chuck cup from contacting with the electrolyte solution.

Abstract: An apparatus for cleaning semiconductor substrates includes a chamber (101), a chuck (102), a liquid collector (104), an enclosing wall (105), at least one driving mechanism (106), at least one internal dispenser (111), and at least one external dispenser (118). The chamber (101) has a top wall (1011), a side wall (1012) and a bottom wall (1013). The chuck (102) is disposed in the chamber (101) for holding a semiconductor substrate (103). The liquid collector (104) surrounds the chuck (102). The enclosing wall (105) surrounds the liquid collector (104). The at least one driving mechanism (106) drives the enclosing wall (105) to move up and down, wherein when the at least one driving mechanism (106) drives the enclosing wall (105) to move up, a seal room (110) is formed by the liquid collector (104), the enclosing wall (105), the top wall (1011) of the chamber (101), and the bottom wall (1013) of the chamber (101). The at least one internal dispenser (111) is disposed inside the seal room (110).

Abstract: The present invention provides a high temperature chemical solution supply system for cleaning substrates. The system includes a solution tank, a buffer tank, a first pump and a second pump. The solution tank contains high temperature chemical solution. The buffer tank has a tank body, a vent line and a needle valve. The tank body contains the high temperature chemical solution. An end of the vent line connects to the tank body, and the other end of the vent line connects to the solution tank. The needle valve is mounted on the vent line, wherein the needle valve is adjusted to reach a flow rate to vent gas bubbles inside of the high temperature chemical solution out of the buffer tank through the vent line. An inlet of the first pump connects to the solution tank, and an outlet of the first pump connects to the buffer tank. An inlet of the second pump connects to the buffer tank, and an outlet of the second pump connects to a cleaning chamber in which a substrate is cleaned.

Abstract: A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned. Normally, if f1=f2, then P2 is equal to zero or much less than P1; if P1=P2, then f2 is higher than f1; if the f1<f2, then, P2 can be either equal or less than P1.

Abstract: A coater with automatic cleaning function and a coater automatic cleaning method. The coater (100,200,300,400,500,600,700,800) includes a coater chamber (101,201,301,401,501,601,701,801) capable of being filled up with cleaning solution, a substrate chuck (102,202,302,402,502,602,702,802) holding and positioning a substrate (103,203,303,403,503,603,703,803), and at least one shroud (108,208,308,408,508) capable of moving up for preventing photoresist from splashing out of the coater chamber (101,201,301,401,501,601,701,801), or moving down and immersing into the cleaning solution for cleaning.

Abstract: A plating chuck for holding a substrate during plating processes, wherein the substrate has a notch area (3031) and a patterned region (3032) adjacent to the notch area (3031). The plating chuck comprises a cover plate (3033) configured to cover the notch area (3031) of the substrate to shield the electric field at the notch area (3031) when the substrate is being plated.

Abstract: A substrate (2010, 3010, 4010, 5010, 6010, 7010, 8010) cleaning method is provided, it comprises the steps of: placing a substrate (2010, 3010, 4010, 5010, 6010, 7010, 8010) on a substrate holder (1314); delivering cleaning liquid onto the surface of the substrate (2010, 3010, 4010, 5010, 6010, 7010, 8010); implementing a pre-treatment process to detach bubbles (2050, 2052, 3050, 4050, 5050, 6050, 7052, 70584, 7056, 8052, 8054, 8056) from the surface of the substrate (2010, 3010, 4010, 5010, 6010, 7010, 8010); and then implementing an ultra or mega sonic cleaning process for cleaning the substrate (2010, 3010, 4010, 5010, 6010, 7010, 8010).

Abstract: A method and an apparatus for cleaning a substrate are provided. The substrate (1010) comprises features (4034) of patterned structures. The method comprises placing the substrate on a substrate holder (1014) configured to rotate the substrate; applying cleaning liquid (1032) on the substrate; rotating the substrate by the substrate holder at a first rate when acoustic energy is being applied to the cleaning liquid by a transducer (1004); and rotating the substrate by the substrate holder at a second rate higher than the first rate when acoustic energy is not being applied to the cleaning liquid by the transducer.

Abstract: The present invention relates to applying at least one ultra/mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.

Abstract: A plating apparatus for depositing metal on a substrate, comprising a membrane frame (14), a catholyte inlet pipe (30) and a center cap (40). The membrane frame (14) has a center passage (144) which passes through the center of the membrane frame (14). The catholyte inlet pipe (30) is connected to the center passage (144) of the membrane frame (14). The center cap (40) is fixed at the center of the membrane frame (14) and covers over the center passage (144) of the membrane frame (14). The top of the center cap (40) has a plurality of first holes (42). The catholyte inlet pipe (30) supplies catholyte to the center cap (40) through the center passage (144) of the membrane frame (14), and the catholyte is supplied to a center area of the substrate through the first holes (42) of the center cap (40).

Abstract: A functional water producing apparatus in an embodiment includes: a water pressure regulator configured to regulate the water pressure of the ultrapure water, the water pressure regulator having a pressure regulating valve configured to regulate a water pressure of the ultrapure water to an almost constant pressure and a feed water pump configured to pressurize the ultrapure water; a dissolving device configured to dissolve functional gas imparting a specific function in the ultrapure water regulated the water pressure by the water pressure regulator; and a control device configured to control the feed water pump to regulate the water pressure of the functional water to a predetermined constant pressure based on a water pressure or a flow rate of the functional water flowing out of the dissolving device.

Abstract: A coater with automatic cleaning function and a coater automatic cleaning method. The coater (100,200,300,400,500,600,700,800) includes a coater chamber (101,201,301,401,501,601,701,801) capable of being filled up with cleaning solution, a substrate chuck (102,202,302,402,502,602,702,802) holding and positioning a substrate (103,203,303,403,503,603,703,803), and at least one shroud (108,208,308,408,508) capable of moving up for preventing photoresist from splashing out of the coater chamber (101,201,301,401,501,601,701,801), or moving down and immersing into the cleaning solution for cleaning.

Abstract: A substrate heat treatment apparatus for heat treating a substrate, comprising a bake plate, a plurality of support components, a baffle plate, and a driving device. The bake plate defines at least one gas passage. The plurality of support components support the substrate. The baffle plate is fixed on a top surface of the bake plate. The baffle plate surrounds the substrate and a gap is formed between an inner circumferential wall of the baffle plate and the substrate. A driving device drives the plurality of support components to move up or down. When heat treating the substrate, a hot gas is supplied to the space between the substrate and the top surface of the bake plate through the gas passage of the bake plate, and the hot gas flows out through the gap formed between the inner circumferential wall of the baffle plate and the substrate.

Abstract: A substrate supporting apparatus (300) for cleaning a back side of a substrate (107) is provided. The substrate supporting apparatus (300) has a hollow shaft (319) and a rotary spindle (303). The rotary spindle (303) is set in the hollow shaft (319) and a spacing is formed between an outer wall of the rotary spindle (303) and an inner wall of the hollow shaft (319). The outer wall of the rotary spindle (303) defines a blocking wall (322) and a recess (324) to prevent particles in the spacing from entering a gas groove (325) which is formed on the hollow shaft (319) and supplies gas to a front side of the substrate (107), avoiding the particles contaminating the front side of the substrate (107), which improves the quality of semiconductor devices.

Abstract: A fall-proof apparatus for cleaning semiconductor devices is provided. The fall-proof apparatus comprises: a nozzle (102) connecting with a carrier (101); a megasonic/ultrasonic device (105) fixing on the carrier (101); and a sensor (104) detecting the distance between the megasonic/ultrasonic device (105) and the carrier (101) to determine whether the megasonic/ultrasonic device (105) is loose and going to fall. The megasonic/ultrasonic device works with the nozzle during a cleaning process. A chamber with the fall-proof apparatus is also provided.

Abstract: A functional water producing apparatus in an embodiment includes: a water pressure regulator configured to regulate the water pressure of the ultrapure water, the water pressure regulator having a pressure regulating valve configured to regulate a water pressure of the ultrapure water to an almost constant pressure and a feed water pump configured to pressurize the ultrapure water; a dissolving device configured to dissolve functional gas imparting a specific function in the ultrapure water regulated the water pressure by the water pressure regulator; and a control device configured to control the feed water pump to regulate the water pressure of the functional water to a predetermined constant pressure based on a water pressure or a flow rate of the functional water flowing out of the dissolving device.

Abstract: Provided is a method for removing barrier layer for minimizing sidewall recess. The method comprises the following steps: introduce noble-gas-halogen compound gas and carrier gas into an etching chamber within which a thermal gas phase etching process is being performed for etching a barrier layer (206) on non-recessed areas of an interconnection structure (501); detect an end point of the thermal gas phase etching process (502), if the thermal gas phase etching process reaches the end point end point, then execute the next step; if the thermal gas phase etching process doesn't reach the end point, then return to the previous step; stop introducing the noble-gas-halogen compound gas and the carrier gas to the etching chamber (503).