Abstract: Disclosed in one embodiment of the present invention is an electroplating apparatus and an electroplating method. The electroplating apparatus comprises a plurality of paddles arranged in parallel. The paddles move in a direction parallel to a substrate, and are used to stir electroplating solution. Within one cycle, the paddles perform reciprocating motion at a set stroke, and the turning points of the reciprocating motion are related to the width of the paddles and the narrowest width of a gap between adjacent paddles. According to the present invention, by designing the size and movement mode of the paddles, the accumulated time in which each corresponding point on the substrate is blocked by the paddles is equal, so that the received quantity of electricity is equal, and thus the consistency of an electroplating height is further improved.

Abstract: A cup-shaped chuck of a substrate holding device includes an inner pressing ring, a middle frame, a sealing element, an outer pressing ring and a contact ring. The inner pressing ring is locked on the inner peripheral surface of the middle frame. The sealing element has an outer end part, a bottom part and an inner end part. The outer end part of the sealing element wraps the outer peripheral surface of at least part of the middle frame. The bottom part of the sealing element wraps the bottom of the middle frame, and is exposed to the outside of the cup-shaped chuck. The inner end part of the sealing element wraps the inner peripheral surface of at least part of the middle frame and is pressed between the inner pressing ring and the middle frame by the inner pressing ring.

Abstract: The present invention discloses a plating apparatus. The plating apparatus comprises a multiple electrodes. The multiple electrodes include a main electrode and at least two second electrodes. The main electrode and the at least two second electrodes respectively generate an electric field in a corresponding area on the surface of a wafer. The main electrode and the at least two second electrodes respectively have a control interface. By selecting the combination of the control relationship between each second electrode and the main electrode, the wafers with different sizes or different notch shapes are plated, and the control relationship is independent control or joint control. The plating apparatus of the present invention can plate wafers with different sizes or different notch shapes without replacing the whole plating chamber.

Abstract: The present invention discloses a plating apparatus and plating methods for plating metal layers on a substrate.

Abstract: An apparatus for cleaning flip chip assemblies is provided. The apparatus comprises: a chuck assembly; a motor coupled to the chuck assembly by a spindle; at least one carrier for holding flip chips; at least one spray nozzle for directing DIW, a cleaning solution, a gas or a vapor. Embodiments of the invention further provide methods for cleaning flip chip assemblies. The method comprises: loading at least one flip chip to the flip chip carriers; rotating the chuck assembly at a rotation speed; flowing DIW for rinsing the flip chips; flowing a cleaning solution for removing the contaminants; applying ultrasonic/megasonic energy to the flip chips; blowing a gas or a vapor via the spray nozzles for drying the flip chips; bringing the flip chips out of the flip chip carriers.

Abstract: A plating apparatus for depositing metal on a substrate, comprising a membrane frame (14), a catholyte inlet pipe (30) and a center cap (40). The membrane frame (14) has a center passage (144) which passes through the center of the membrane frame (14). The catholyte inlet pipe (30) is connected to the center passage (144) of the membrane frame (14). The center cap (40) is fixed at the center of the membrane frame (14) and covers over the center passage (144) of the membrane frame (14). The top of the center cap (40) has a plurality of first holes (42). The catholyte inlet pipe (30) supplies catholyte to the center cap (40) through the center passage (144) of the membrane frame (14), and the catholyte is supplied to a center area of the substrate through the first holes (42) of the center cap (40).

Abstract: The present invention provides a substrate heat treatment apparatus for heat treating a substrate, including a bake plate, support components, a baffle plate, and a driving device. The bake plate defines at least one gas passage. The support components support the substrate. The baffle plate is fixed on a top surface of the bake plate. The baffle plate surrounds the substrate and a gap is formed between an inner circumferential wall of the baffle plate and the substrate. A driving device drives the plurality of support components to move up or down. When heat treating the substrate, a hot gas is supplied to the space between the substrate and the top surface of the bake plate through the gas passage of the bake plate, and the hot gas flows out through the gap formed between the inner circumferential wall of the baffle plate and the substrate.

Abstract: The present invention discloses a method for cleaning substrate without damaging patterned structure on the substrate using ultra/mega sonic device, comprising: applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; after micro jet generated by bubble implosion and before said micro jet generated by bubble implosion damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned.

Abstract: The present invention discloses plating apparatuses and plating methods for metal deposition on a substrate with pattern structures. In an embodiment, a plating apparatus comprises a plating bath configured to accommodate electrolyte, a substrate holding module configured to hold a substrate, and at least one driving device configured to drive the substrate holding module together with the substrate to horizontally vibrate and/or vertically vibrate during the substrate being immersed into the electrolyte to be plated. The present invention can enhance mass transfer during the substrate being plated by vibrating the substrate holding module so as to raise plating rate and uniformly plating on the pattern structures.

Abstract: A plating apparatus and plating methods for plating metal layers on a substrate.

Abstract: A method for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the method comprising: delivering a cleaning liquid over a surface of a semiconductor wafer during a cleaning process; and imparting sonic energy to the cleaning liquid from a sonic transducer during the cleaning process, wherein power is alternately supplied to the sonic transducer at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, the first predetermined period of time and the second predetermined period of time consecutively following one another, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

Abstract: A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

Abstract: Embodiments of the present invention provide a method for removing a barrier layer of a metal interconnection on a wafer, which remove a single-layer metal ruthenium barrier layer. A method comprises: oxidizing step, is to oxidize the single-layer metal ruthenium barrier layer into a ruthenium oxide layer by electrochemical anodic oxidation process; oxide layer etching step, is to etch the ruthenium oxide layer with etching liquid to remove the ruthenium oxide layer.

Abstract: Methods and an apparatus for removing particles or photoresist on substrates. In an embodiment, a method comprises the following steps: transferring one or more substrates into a DIO3 solution accommodated in a DIO3 bath; after the one or more substrates are processed in the DIO3 bath, taking the one or more substrates out from the DIO3 bath and transferring the one or more substrates into a SPM solution accommodated in a SPM bath; after the one or more substrates are processed in the SPM bath, taking the one or more substrates out from the SPM bath and rinsing the one or more substrates; and transferring the one or more substrates to one or more single chambers to perform single substrate cleaning and drying process. The method combines DIO3 and SPM in one cleaning sequence, which can remove particles or photoresist, especially remove photoresist treated by medium dose or high dose of ion implantation.

Abstract: A method for effectively cleaning vias (20034), trenches (20036) or recessed areas on a substrate (20010) using an ultra/mega sonic device (1003, 3003, 16062, 17072), comprising: applying liquid (1032) into a space between a substrate (20010) and an ultra/mega sonic device (1003, 3003, 16062, 17072); setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device (1003, 3003, 16062, 17072); after the ratio of total bubbles volume to volume inside vias (20034), trenches (20036) or recessed areas on the substrate (20010) increasing to a first set value, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device (1003, 3003, 16062, 17072); after the ratio of total bubbles volume to volume inside the vias (20034), trenches (20036) or recessed areas reducing to a second set value, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate (20010) being cleaned.

Abstract: A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

Abstract: The present invention relates to applying at least one ultra/mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.

Abstract: An apparatus and a method for wet process on a semiconductor substrate are provided. The apparatus includes a process chamber (1005), a chuck (1002) for holding and positioning a semiconductor substrate (1001) disposed in the process chamber, a rotating driving mechanism (1004) driving the chuck to rotate, a chamber shroud (1006) disposed surrounding the process chamber, at least one vertical driving mechanism driving the chamber shroud to move up or down, a shielding cover (1007), at least one driving device (1008) driving the shielding cover to cover down or lift up, at least one dispenser module (1014) having a dispenser (1030) for spraying liquid to the surface of the semiconductor substrate. When the shielding cover covers above the process chamber, the chamber shroud is moved up to couple with the shielding cover, so as to seal the process chamber for preventing the liquid from splashing out of the process chamber.

Abstract: A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned. Normally, if f1=f2, then P2 is equal to zero or much less than P1; if P1=P2, then f2 is higher than f1; if the f1<f2, then, P2 can be either equal or less than P1.

Abstract: An apparatus for cleaning semiconductor substrates including a chamber, a chuck, a liquid collector, an enclosing wall, at least one driving mechanism, at least one internal dispenser, and at least one external dispenser. The chamber has a top wall, a side wall and a bottom wall. The chuck is disposed in the chamber. The liquid collector surrounds the chuck. The enclosing wall surrounds the liquid collector. The driving mechanism drives the enclosing wall to move up and down, wherein when the enclosing wall is driven to move up, a seal room is formed by the liquid collector, the enclosing wall, the top wall and bottom wall of the chamber. The internal dispenser is disposed inside the seal room. The external dispenser is disposed outside the seal room and capable of getting in and out of the seal room after the enclosing wall is driven to move down.