Abstract: Provided is a method for removing barrier layer for minimizing sidewall recess. The method comprises the following steps: introduce noble-gas-halogen compound gas and carrier gas into an etching chamber within which a thermal gas phase etching process is being performed for etching a barrier layer (206) on non-recessed areas of an interconnection structure (501); detect an end point of the thermal gas phase etching process (502), if the thermal gas phase etching process reaches the end point end point, then execute the next step; if the thermal gas phase etching process doesn't reach the end point, then return to the previous step; stop introducing the noble-gas-halogen compound gas and the carrier gas to the etching chamber (503).

Abstract: A method and apparatus for pulse electrochemical polishing a wafer are disclosed. The method comprises steps of: establishing a duty cycle table showing all points on the wafer, a removal thickness corresponding to every point and a duty cycle corresponding to the removal thickness; driving a wafer chuck holding and positioning the wafer to move at a preset speed so that a special point on the wafer is right above a nozzle ejecting charged electrolyte onto the wafer; looking up the duty cycle table and obtaining the removal thickness and the duty cycle corresponding to the special point; and applying a preset pulse power source to the wafer and the nozzle and the actual polishing power source for polishing the special point being equal to the duty cycle multiplying by the preset power source.

Abstract: An apparatus for substrate metallization from electrolyte is provided. The apparatus comprises: an immersion cell containing metal salt electrolyte; at least one electrode connecting to at least one power supply; an substrate holder holding at least one substrate to expose a conductive side of the substrate to face the at least one electrode, the substrate holder being electricity conducting; an oscillating actuator oscillating the substrate holder with an amplitude and a frequency; at least one ultrasonic device with an operating frequency and an intensity, disposed in the metallization apparatus; at least one ultrasonic power generator connecting to the ultrasonic device; at least one inlet for metal salt electrolyte feed; and at least one outlet for metal salt electrolyte drain.

Abstract: An apparatus and method for uniform metallization on substrate are provided, achieving highly uniform metallic film deposition at a rate far greater than a conventional film growth rate in electrolyte solutions. The apparatus includes an immersion bath (3021), at least one set of electrode (3002), a substrate holder (3003), at least one ultra/mega sonic device (3004), a reflection plate (3005), and a rotating actuator (3030). The immersion bath contains at least one metal salt electrolyte (3020). The at least one set of electrode (3002) connects to an independent power supply. The substrate holder (3003) holds at least one substrate and electrically connects with a conductive side of the substrate. The conductive side of the substrate is exposed to face the electrode. The at least one ultra/mega sonic device (3004) and the reflection plate (3005) are disposed parallel for generating ultra/mega sonic standing wave in the immersion bath.

Abstract: An apparatus and method for cleaning semiconductor wafer are provided. The apparatus includes a brush module, a swing arm, a rotating actuator and an elevating actuator. The brush module has a brush head for providing mechanical force on a surface of a wafer. An end of the swing arm mounts the brush module. The rotating actuator is connected with the other end of the swing arm. The rotating actuator drives the swing arm to swing across the whole surface of the wafer, which brings the brush head moving across the whole surface of the wafer. The elevating actuator is connected with the other end of the swing arm. The elevating actuator drives the swing arm to rise or descend, which brings the brush module rising or descending. The apparatus cleans the semi-conductor wafer by means of the brush head, which improves the cleaning effect.

Abstract: A coater with automatic cleaning function and a coater automatic cleaning method. The coater (100,200,300,400,500,600,700,800) includes a coater chamber (101,201,301,401,501,601,701,801) capable of being filled up with cleaning solution, a substrate chuck (102,202,302,402,502,602,702,802) holding and positioning a substrate (103,203,303,403,503,603,703,803), and at least one shroud (108,208,308,408,508) capable of moving up for preventing photoresist from splashing out of the coater chamber (101,201,301,401,501,601,701,801), or moving down and immersing into the cleaning solution for cleaning.

Abstract: A nozzle for charging and ejecting electrolyte in SFP process is disclosed. The nozzle includes an insulated foundation defining a through-hole, a conductive body as negative electrode connecting with a power source for charging the electrolyte and an insulated nozzle head. The conductive body has a fixing portion located on the insulated foundation. The fixing portion forms a receiving portion inserted into the through-hole and defining a receiving hole passing therethrough. The insulated nozzle head has a cover assembled with the insulated foundation above the conductive body and a tube extending through the cover and defining a main fluid path through where the charged electrolyte is ejected for polishing. The tube is inserted in the receiving hole and stretches out of the receiving hole of the conductive body forming an auxiliary fluid path between an inner circumferential surface of the receiving portion and an outer circumferential surface of the tube.

Abstract: A functional water producing apparatus in an embodiment includes: a water pressure regulator configured to regulate the water pressure of the ultrapure water, the water pressure regulator having a pressure regulating valve configured to regulate a water pressure of the ultrapure water to an almost constant pressure and a feed water pump configured to pressurize the ultrapure water; a dissolving device configured to dissolve functional gas imparting a specific function in the ultrapure water regulated the water pressure by the water pressure regulator; and a control device configured to control the feed water pump to regulate the water pressure of the functional water to a predetermined constant pressure based on a water pressure or a flow rate of the functional water flowing out of the dissolving device.

Abstract: The present invention provides a barrier layer removal method, wherein the barrier layer includes at least one layer of ruthenium or cobalt, the method comprising: removing the barrier layer including ruthenium or cobalt formed on non-recessed areas of a semiconductor structure by thermal flow etching.

Abstract: An apparatus for substrate metallization from electrolyte is provided. The apparatus comprises: an immersion cell containing metal salt electrolyte; at least one electrode connecting to at least one power supply; an electrically conductive substrate holder holding at least one substrate to expose a conductive side of the substrate to face the at least one electrode; an oscillating actuator for oscillating the substrate holder with an amplitude and a frequency; at least one ultrasonic device with an operating frequency and an intensity, disposed in the metallization apparatus; at least one ultrasonic power generator connecting to the ultrasonic device; at least one inlet for metal slat electrolyte feeding; and at least one outlet for metal salt electrolyte draining.

Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5/N for each rotation of the chuck, where ? is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5?n during the cleaning process, where ? is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.

Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or counter clockwise.

Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5?/N for each rotation of the chuck, where ? is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5?n during the cleaning process, where ? is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.

Abstract: A vacuum chuck is disclosed for holding and positioning wafers more stably and securely. The vacuum chuck includes a supporting assembly having a receiving groove and at least one first vacuum aperture defined in the receiving groove. A seal unit includes a seal ring bulging to form a vacuum trough. The seal ring is fixed in the receiving groove of the supporting assembly and has at least one second vacuum aperture communicating with the first vacuum aperture. A chuck connector fastened with the supporting assembly has at least one vacuum port and at least one vacuum orifice communicating with the vacuum port. At least one vacuum hose connects the first vacuum aperture, the second vacuum aperture with the vacuum orifice and the vacuum port of the chuck connector for evacuating the air of the vacuum trough to hold and position the wafer on the seal ring and the supporting assembly.

Abstract: A method of producing washing hydrogen water in an embodiment, includes: a step of storing ammonia water in a first tank; a step of transferring the ammonia water from the first tank to a second tank; a step of diluting the transferred ammonia water with ultrapure water in the second tank; a step of mixing the diluted ammonia water into hydrogen water; and a washing step of washing an inside of the first tank by ultrapure water to remove fine particles derived from ammonia generated in the first tank.

Abstract: The present invention provides a method for forming interconnection structures, including the following steps: providing a semiconductor wafer with a dielectric layer; forming a first recessed area for forming the interconnection structures and a non-recessed area on the dielectric layer; forming a second recessed area for forming dummy structures on the dielectric layer; depositing a barrier layer to cover the first and second recessed areas and the non-recessed area; depositing a metal layer to fill the first and second recessed areas and cover the non-recessed area; removing the metal layer on the non-recessed area to expose the barrier layer; and removing the barrier layer on the non-recessed area to expose the dielectric layer.

Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or counter clockwise.

Abstract: An apparatus and a method for plating and/or polishing wafer includes a wafer chuck, an auxiliary nozzle apparatus and a main nozzle apparatus. The wafer chuck holds and positions the wafer, moves horizontally, and rotates. The auxiliary nozzle apparatus supplies uncharged or charged electrolyte to cover the outer edge of the wafer and the wafer chuck, and the main nozzle apparatus supplies charged electrolyte to the surface of the wafer, to improve the plating and/or polishing uniformity of the outer edge of the wafer, reduce the entire electric resistance of the apparatus, and improve the plating and/or polishing rate.

Abstract: The present invention improves the wetting between process solution and the wafer surface when they are put into contact by pre-implementing an adsorbed liquid layer on the entire front surface of the wafer just prior to the process. The pre-implementing adsorbed liquid layer is realized by transporting vaporized liquid molecules from vapor phase at elevated temperature (relative to wafer) and condensing them onto wafer surface. The pre-implementing adsorbed liquid is fully filled in the patterned structures formed on the wafer by multilayer absorption of the vaporized liquid molecules and the temperature of the wafer surface is above dew point of the vaporized liquid while condensing, which avoids generating bubbles inside the patterned structures.

Abstract: The present invention relates to applying at least one ultra/mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.