Abstract: An integrated circuit device has a state-saving feature and includes a programmable logic block, I/O pads, a dedicated register, at least one volatile memory block, a non-volatile memory block, a condition-sensing circuit for detecting at least one condition, A control circuit such as a state machine controls the saving of states of various volatile memories and registers to the non-volatile memory and also controls the initialization of the volatile registers and memories using the saved state data.

Abstract: A programmable system-on-a-chip integrated circuit device comprises a programmable logic block, a non-volatile memory block, an analog sub-system, an analog input/output circuit block, and a digital input/output circuit block. A programmable interconnect architecture includes programmable elements and interconnect conductors. Ones of the programmable elements are coupled to the programmable logic block, the non-volatile memory block, the analog sub-system, the analog input/output circuit block, the digital input/output circuit block, and to the interconnect conductors, such that inputs and outputs of the programmable logic block, the non-volatile memory block, the analog sub-system, the analog input/output circuit block, and the digital input/output circuit block can be programmably coupled to one another.

Abstract: A low voltage signaling differential signaling driver comprising a first output line coupled to a delay circuit, a first multiplexer and a first output buffer. The first output line is also coupled to an inverter, a second multiplexer and a second output buffer.

Abstract: A clock tree distribution network for a field programmable gate array comprises an interface with a root signal chosen from at least one of an external clock signal, an internal clock signal, a plurality of phase lock loop cell output signals and programmable elements. The FPGA includes a logic array with programmable elements coupling the logic array to a programmable routing architecture and the interface. A routed clock network selects a signal from a clock signal from the interface, a local signal from the logic array through the routing architecture, Vcc or ground, and routes the selected signal to the logic array through the clock tree distribution network. A hardwired clock network selects a signal from a clock signal from the interface or a local signal from the routing architecture, and routes the selected signal to a plurality of flip-flops in the logic array through the clock tree distribution network.

Abstract: A non-volatile programmable memory cell suitable for use in a programmable logic array includes a non-volatile MOS transistor of a first conductivity type in series with a volatile MOS transistor of a second conductivity type. The non-volatile MOS transistor may be a floating gate transistor, such as a flash transistor, or may be another type of non-volatile transistor such as a floating charge-trapping SONOS, MONOS transistor, or a nano-crystal transistor. A volatile MOS transistor, an inverter, or a buffer may be driven by coupling its gate or input to the common connection between the non-volatile MOS transistor and the volatile MOS transistor.

Abstract: A programmable system-on-a-chip integrated circuit device includes a programmable logic block, at least one user non-volatile memory block, and voltage-measuring and control analog and digital circuits on a single semiconductor integrated circuit chip or a flip chip, face-to-face, or other multiple die configuration. The programmable system-on-a-chip integrated circuit with voltage-measuring, current-measuring and control circuitry performs voltage measurement and control functions and can be used to control and monitor external power supplies connected to external loads.

Abstract: In an integrated circuit, a radiation tolerant static random access memory device comprising a first inverter having an input and an output, a second inverter having an input and an output. A first resistor is coupled between the output of the first inverter and the input of the second inverter. A second resistor is coupled between the output of the second inverter and the input of the first inverter. A first write transistor is coupled to the output of the first inverter and has a gate coupled to a source of a first set of write-control signals and a second write transistor is coupled to the output of the second inverter and has a gate coupled to said source of a second set of write-control signals. Finally, a pass transistor has a gate coupled to the output of on of the first and second inverters.

Abstract: A field programmable gate array logic cell includes a logic circuit having three inputs and at least one output and a plurality of multiplexers having inputs and outputs. The logic circuit also includes a plurality of programmable elements coupled between the three inputs and at least one output of the logic circuit and the inputs and outputs of the plurality of multiplexers such that a plurality of sequential logic units and combinatorial units can be realized by programming selected ones of the programmable elements, the sequential logic units may include a flip-flop.

Abstract: A two-transistor non-volatile memory cell is formed in a semiconductor body. A memory-transistor well is disposed within the semiconductor body. A switch-transistor well is disposed within the semiconductor body and is electrically isolated from the memory transistor well. A memory transistor including spaced-apart source and drain regions is formed within the memory-transistor well. A switch transistor including spaced-apart source and drain regions is formed within the switch-transistor well region. A floating gate is insulated from and self aligned with the source and drain regions of the memory transistor and switch transistor. A control gate is disposed above and aligned to the floating gate and with the source and drain regions of the memory transistor and the switch transistor.

Abstract: An integrated circuit device includes a programmable logic block, a monitoring input, a condition-sensing circuit coupled to the monitoring input and configured to generate a condition-sensed signal at an output in response to sensing a condition at the monitoring input, a first digital input, a first digital output, and a gating circuit configured in the programmable logic block and coupled between the first digital input and the first digital output. The gating circuit has a gating input coupled to the condition-sensing circuit and generates an output. The output is related to an input state of the first digital input in the absence of the condition-sensed signal and assumes an override state in the presence of the condition-sensed signal.

Abstract: A method for programming a flash memory cell comprises providing input data to the flash cell and providing a segmented programming pulse to the flash memory cell. The segmented programming pulse includes programming segments, each successive programming segment including a programming potential higher than the programming potential used in a previous programming segment, each programming segment followed by a zero-potential compare segment. The output of the flash memory cell is compared with the input data during the compare segment after each programming segment. The segmented programming pulse is terminated if the output of the flash memory cell matches the input data. The programming potential in each programming segment is increased during the programming segment. The programming potential in successive segments is either is increased or stepped up to the final value of the previous programming segment.

Abstract: An integrated circuit system includes a first integrated circuit die and a family of second integrated circuit dice. The first integrated circuit die have input/output circuits disposed thereon and further have a first array of face-to-face bonding structures disposed on a first face thereof. Each member of the family of second integrated circuit dice have logical function circuits disposed thereon and further have a second array of face-to-face bonding structures disposed on a first face thereof. The second array of face-to-face bonding structures of each member of the family mates with a different portion of the first array of face-to-face bonding structures.

Abstract: A metal-to-metal antifuse having a lower metal electrode, a lower thin adhesion promoting layer disposed over the lower metal electrode, an amorphous carbon antifuse material layer disposed over the thin adhesion promoting layer, an upper thin adhesion promoting layer disposed over said antifuse material layer, and an upper metal electrode. The thin adhesion promoting layers are about 2 angstroms to 20 angstroms in thickness, and are from a material selected from the group comprising SixCy and SixNy. The ratio of x to y in SixCy is in a range of about 1+/?0.4, and the ratio of x to y in SixNy is in a range of about 0.75+/?0.225.

Abstract: An FPGA architecture has top, middle and low levels. The top level of the architecture is an array of the B16×16 tiles arranged in a rectangular array and enclosed by I/O blocks on the periphery. On each of the four sides of a B16×16 tile, and also associated with each of the I/O blocks is a freeway routing channel. A B16×16 tile in the middle level of hierarchy is a sixteen by sixteen array of B1 blocks. The routing resources in the middle level of hierarchy are expressway routing channels M1, M2, and M3 including groups of interconnect conductors. At the lowest level of the semi-hierarchical FPGA architecture, there are block connect (BC) routing channels, local mesh (LM) routing channels, and direct connect (DC) interconnect conductors. Each BC routing channel is coupled to an expressway tab to provide access for each B1 block to the expressway routing channels M1, M2, and M3, respectively.

Abstract: An integrated circuit device has a state-saving feature and includes a programmable logic block, I/O pads, a dedicated register, at least one volatile memory block, a non-volatile memory block, a condition-sensing circuit for detecting at least one condition, A control circuit such as a state machine controls the saving of states of various volatile memories and registers to the non-volatile memory and also controls the initialization of the volatile registers and memories using the saved state data.

Abstract: A flash memory array includes a reference bit line on which a reference current is imposed. During read operation, bit lines selected for reading are connected to current-to-voltage converters, each of which generates an output voltage based upon the input current flowing in the bit line. The output voltage of the current-to-voltage converter is compared to a reference voltage derived from the output of a reference current-to-voltage converter whose input is driven by a reference current on a reference bit line. Any cell that conducts more current than the reference current will be regarded as an erased cell. Conversely, any cell that conducts less current than the reference current will be regarded as a programmed cell.

Abstract: A two-transistor non-volatile memory cell is formed in a semiconductor body. A memory-transistor well is disposed within the semiconductor body. A switch-transistor well is disposed within the semiconductor body and is electrically isolated from the memory transistor well. A memory transistor including spaced-apart source and drain regions is formed within the memory-transistor well. A switch transistor including spaced-apart source and drain regions is formed within the switch-transistor well region. A floating gate is insulated from and self aligned with the source and drain regions of the memory transistor and switch transistor. A control gate is disposed above and aligned to the floating gate and with the source and drain regions of the memory transistor and the switch transistor.

Abstract: An apparatus includes an FPGA, which includes a first FPGA tile including a plurality of FGs, a first, second, and third set of routing conductors, and a plurality of IGs. The FGs are arranged in rows and columns with each FG being configured to receive tertiary and regular input signals, perform a logic operation, and generate regular output signals. The third set of routing conductors is coupled to the first set of output ports of the FGs and configured to receive signals, route signals within the FPGA tile, and provide input signals to the third set of input ports of the FGs. The IGs surround the FGs such that one IG is positioned at each end of each row and column. Each IG is coupled to the third set of routing conductors and configured to transfer signals from the third set of routing conductors to outside the first FPGA tile.

Abstract: A programmable system-on-a-chip integrated circuit device comprises a programmable logic block, a non-volatile memory block, an analog sub-system, an analog input/output circuit block, and a digital input/output circuit block. A programmable interconnect architecture includes programmable elements and interconnect conductors. Ones of the programmable elements are coupled to the programmable logic block, the non-volatile memory block, the analog sub-system, the analog input/output circuit block, the digital input/output circuit block, and to the interconnect conductors, such that inputs and outputs of the programmable logic block, the non-volatile memory block, the analog sub-system, the analog input/output circuit block, and the digital input/output circuit block can be programmably coupled to one another.

Abstract: An address transition detector circuit includes an input node, an output node, a bandgap reference node, and Pbias and Nbias nodes having voltages derived from the bandgap reference node. First through fifth cascaded inverters are each powered by a p-channel and n-channel MOS bias transistors having their gates coupled respectively to the Pbias node and the Nbias node. The input of the first inverter is coupled to the input node. First and second capacitors are coupled respectively to ground from the outputs of the first and fourth cascaded inverters. A NAND gate has a first input coupled to the input node, a second input coupled the output of the fifth cascaded inverter, and an output coupled to the output node.