Abstract: The present system comprises a radiation tolerant programmable logic device having logic modules and routing resources coupling together the logic modules. Configuration data lines providing configuration data control the programming of the logic modules and the routing resources. Error correction circuitry coupled to the configuration data lines analyzes and corrects any errors in the configuration data that may occur due to a single event upset (SEU).

Abstract: An ESD protection circuit is disclosed for an n-channel MOS transistor formed in an inner p-well of a triple-well process and connected to an I/O pad that may experience both positive and negative voltages according to the present invention. A first switch connects the p-well containing the n-channel MOS transistor to ground if the voltage at the I/O pad is positive and a second switch connects the p-well containing the n-channel MOS transistor to the I/O pad if the voltage at the I/O pad is negative. A third switch connects the gate of the n-channel MOS transistor to the p-well if it is turned off and a fourth switch connects the gate of the n-channel MOS transistor to Vcc if it is turned on.

Abstract: An integrated circuit system includes a first set of integrated circuit dice each member of the set having a different configuration of input/output circuits disposed thereon and a second set of integrated circuit dice each having different logical function circuits disposed thereon. Each member of the first and second sets of integrated circuit dice include an array of face-to-face bonding pads disposed thereon that mate with the array of face-to-face bonding pads of each member of the other set.

Abstract: A reprogrammable metal-to-metal antifuse is disposed between two metal interconnect layers in an integrated circuit. A lower barrier layer is formed from Ti. A lower adhesion-promoting layer is disposed over the lower Ti barrier layer. An antifuse material layer selected from a group comprising at least one of amorphous carbon and amorphous carbon doped with at least one of hydrogen and fluorine is disposed over the lower adhesion-promoting layer. An upper adhesion-promoting layer is disposed over the antifuse material layer. An upper Ti barrier layer is disposed over the upper adhesion-promoting layer.

Abstract: An integrated temperature-compensated RC oscillator circuit includes an inverter having an input and an output. An RC network is coupled between the inverter and a pair of comparators. A first comparator has an inverting input coupled to a first reference voltage, a non-inverting input coupled to the RC network, and an output. A second comparator has an inverting input coupled to the RC network, a non-inverting input coupled to a second reference voltage, and an output. A set-reset flip-flop has a set input coupled to the output of the first comparator, a reset input coupled to the output of the second comparator, and an output coupled to the input of the inverter. Differential amplifiers in the comparators each have a diode-connected p-channel MOS transistor controlling a mirrored p-channel MOS transistor whose channel width is less than that of the diode-connected p-channel current mirror transistor.

Abstract: A circuit for selectively interconnecting two nodes in an integrated circuit device includes a memory array having a plurality of wordlines and a plurality of bitlines. A refresh transistor has a source coupled to one of the plurality of bitlines, a control gate coupled to a dynamic random access memory wordline and a drain. A switching transistor has a gate coupled to the drain of the refresh transistor, a source coupled to a first one of the nodes and a drain coupled to a second one of the nodes. An address decoder for supplies periodic signals to the wordlines and the dynamic random access memory wordline.

Abstract: An SRAM bus architecture includes pass-through interconnect conductors. Each of the pass-through interconnect conductors is connected to routing channels of the general interconnect architecture of the FPGA through an element which includes a pass transistor connected in parallel with a tri-state buffer. The pass transistors and tri-state buffers are controlled by configuration SRAM bits. Some of the pass-through interconnect conductors are connected by programmable elements to the address, data and control signal lines of the SRAM blocks, while other pass through the SRAM blocks without being further connected to the SRAM bussing architecture.

Abstract: A non-volatile memory configuration scheme is disclosed for volatile-memory-based programmable circuits in a programmable integrated circuit that includes an FPGA fabric, a plurality of first configurable circuit elements external to the FPGA fabric, and a plurality of second configurable circuit elements external to the FPGA fabric. A plurality of distributed configuration non-volatile memory cells is disposed in the FPGA, each one of the distributed configuration non-volatile memory cells coupled to a different one of the plurality of first configurable circuit elements. A non-volatile memory array stores configuration information for the second configurable circuit elements. A plurality of register cells is disposed with the second configurable circuit elements and is coupleable to the non-volatile memory array, each one of the register cells coupled to a different one of the plurality of second configurable circuit elements.

Abstract: An integrated circuit includes a plurality of inputs, a plurality of output pads, a programmable logic block, an analog circuit block, an analog-to-digital converter programmably coupleable to individual analog circuits in the analog circuit block, and an interconnect architecture programmably coupling selected ones of the plurality of inputs, the plurality of outputs, the programmable logic block, the analog circuit block, and the analog-to-digital converter. At least one of the inputs may be programmably configured as one of a digital input programmably coupleable to elements in the programmable logic block or as an analog input to an analog circuit in the analog circuit block.

Abstract: An ESD protection circuit is disclosed for an n-channel MOS transistor formed in an inner p-well of a triple-well process and connected to an I/O pad that may experience both positive and negative voltages according to the present invention. A first switch connects the p-well containing the n-channel MOS transistor to ground if the voltage at the I/O pad is positive and a second switch connects the p-well containing the n-channel MOS transistor to the I/O pad if the voltage at the I/O pad is negative. A third switch connects the gate of the n-channel MOS transistor to the p-well if it is turned off and a fourth switch connects the gate of the n-channel MOS transistor to VCC if it is turned on.

Abstract: A programmable system-on-a-chip integrated circuit device includes a programmable logic block, at least one user non-volatile memory block, and temperature sensing and control analog and digital circuits on a single semiconductor integrated circuit chip or a flip chip, face-to-face, or other multiple die configuration. The programmable system-on-a-chip integrated circuit with temperature measuring and control circuitry performs temperature measurement and control functions and can be used to create an on-chip temperature log.

Abstract: First and second complimentary static random-access-memory cell bit lines are coupled to first and second bit nodes through first and second access transistors controlled by a word line. A first inverter has an input coupled to the first bit node and an output coupled to the second bit node. A second inverter has an input coupled to the second bit node and an output coupled to the first bit node through a first transistor switch. A transistor switch is coupled between the output of a non-volatile memory cell and the first bit node. A control circuit coupled to the gate of the transistor switch. Either the drive level of the non-volatile memory cell is selected to overpower the output of the second inverter or the second inverter is decoupled from the first bit node while the output of the non-volatile memory cell is coupled to the first bit node.

Abstract: The present system comprises a radiation tolerant programmable logic device having logic modules and routing resources coupling together the logic modules. Configuration data lines providing configuration data control the programming of the logic modules and the routing resources. Error correction circuitry coupled to the configuration data lines analyzes and corrects any errors in the configuration data that may occur due to a single event upset (SEU).

Abstract: An SRAM bus architecture includes pass-through interconnect conductors. Each of the pass-through interconnect conductors is connected to routing channels of the general interconnect architecture of the FPGA through an element which includes a pass transistor connected in parallel with a tri-state buffer. The pass transistors and tri-state buffers are controlled by configuration SRAM bits. Some of the pass-through interconnect conductors are connected by programmable elements to the address, data and control signal lines of the SRAM blocks, while other pass through the SRAM blocks with out being further connected to the SRAM bussing architecture.

Abstract: An FPGA architecture has top, middle and low levels. The top level is an array of B 16×16 tiles enclosed by I/O blocks. The routing resources in the middle level are expressway routing channels including interconnect conductors. At the lowest level, there are block connect routing channels, local mesh routing channels, and direct connect interconnect conductors to connect the logic elements to further routing resources. Each B1 block includes four clusters of devices. Each of the clusters includes first and second LUT3s, a LUT2, and a DFF. Each of the LUT3s have three inputs and one output. Each of the LUT2s have two inputs and one output. Each DFF has a data input and a data output. In each of the clusters the outputs of the LUT3s are multiplexed to the input of DFF, and symmetrized with the output of the DFF to form two outputs of each of the clusters.

Abstract: An integrated temperature-compensated RC oscillator circuit includes an inverter having an input and an output. An RC network is coupled between the inverter and a pair of comparators. A first comparator has an inverting input coupled to a first reference voltage, a non-inverting input coupled to the RC network, and an output. A second comparator has an inverting input coupled to the RC network, a non-inverting input coupled to a second reference voltage, and an output. A set-reset flip-flop has a set input coupled to the output of the first comparator, a reset input coupled to the output of the second comparator, and an output coupled to the input of the inverter. Differential amplifiers in the comparators each have a diode-connected p-channel MOS transistor controlling a mirrored p-channel MOS transistor whose channel width is less than that of the diode-connected p-channel current mirror transistor.

Abstract: A repeatable non-uniform segmented routing architecture in a field programmable gate array comprising: a repeatable block of routing tracks, the routing tracks grouped into sets of routing tracks, each set having a first routing track in a first track position, a second routing track in a last track position, a programmable element, and a direct address device for programming the programmable element; wherein at least one of the routing tracks is segmented into non-uniform lengths by the programmable element and the second routing track crosses-over to the first track position in a region adjacent to an edge of the repeatable block; and wherein a first plurality of the routing track sets proceed in a horizontal direction and a second plurality of the routing track sets proceed in a vertical direction.

Abstract: A routing architecture in a field programmable gate array (FPGA) having a plurality of logic clusters wherein each logic cluster has at least two sub-clusters. The logic clusters are arranged in rows and columns and each logic clusters has a plurality of receiver components, a plurality of transmitter components, at least one buffer module, at least one sequential logic component and at least one combinatorial logic component. A first-level routing architecture is programmably coupled to the logic clusters and a second-level routing architecture is programmably coupled to the logic clusters and to the first-level routing architecture through at least one of the transmitter components and at least one of the receiver components.

Abstract: An apparatus for interfacing a phase locked loop in a field programmable gate array. The apparatus comprising a phase locked loop cluster. The phase locked loop further comprising a plurality of RT modules, a plurality of RO modules, at least one TY module, a plurality of receiver modules and at least one buffer module. A phase locked loop selectively coupled to the RT modules, the RO modules, the TY modules, the receiver modules and at least one buffer module in the phase locked loop cluster.

Abstract: An apparatus includes an FPGA, which includes a first FPGA tile including a plurality of FGs, a first, second, and third set of routing conductors, and a plurality of IGs. The FGs are arranged in rows and columns with each FG being configured to receive tertiary and regular input signals, perform a logic operation, and generate regular output signals. The third set of routing conductors is coupled to the first set of output ports of the FGs and configured to receive signals, route signals within the FPGA tile, and provide input signals to the third set of input ports of the FGs. The IGs surround the FGs such that one IG is positioned at each end of each row and column. Each IG is coupled to the third set of routing conductors and configured to transfer signals from the third set of routing conductors to outside the first FPGA tile.