Abstract: A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be used in combination with doped sidewall isolation regions. Both the trench and the sidewall isolation regions may be annular and enclose an isolated pocket of the substrate. The isolation structures are formed by modular implant and etch processes that do not include significant thermal processing or diffusion of dopants so that the resulting structures are compact and may be tightly packed in the surface of the substrate.

Abstract: A SEPIC converter with over-voltage protection includes a high-side inductor that connects a node Vw to a node Vx. The node Vx is connected, in turn to ground by a power MOSFET. The node Vx is also connected to a node Vy by a first capacitor. The node Vy is connected to ground by a low-side inductor. A rectifier diode further connects the node Vy and a node Vout and an output capacitor is connected between the node Vout and ground. A PWM control circuit is connected to drive the power MOSFET. An over-voltage protection MOSFET connects an input supply to the PWM control circuit and the node Vw. A comparator monitors the voltage of the input supply. If that voltage exceeds a predetermined value Vref the comparator output causes the over-voltage protection MOSFET to disconnect the node Vw and the PWM control circuit from the input supply.

Abstract: Devices, such as mobile devices, may be exposed to short circuit and output overload events. To protect against such events, mobile devices typically include current limit circuits. Some current limit circuits may involve user programmable function. User programmable function may need accurate current limit detectors. Various embodiments of the present invention include devices and methods for detecting one or more programmed current limits. Some embodiments allow for a user application to select among parallel or serial configurations of current detection circuitry. Each such configuration may include multiple resistive devices of different resistive values.

Abstract: A transistor is formed inside an isolation structure which includes a floor isolation region and a trench extending from the surface of the substrate to the floor isolation region. The trench may be filled with a dielectric material or may have a conductive material in a central portion with a dielectric layer lining the walls of the trench.

Abstract: A transistor is formed inside an isolation structure which includes a floor isolation region and a trench extending from the surface of the substrate to the floor isolation region. The trench may be filled with a dielectric material or may have a conductive material in a central portion with a dielectric layer lining the walls of the trench.

Abstract: An Electro-Static Discharge (ESD) protection device is formed in an isolated region of a semiconductor substrate. The ESD protection device may be in the form of a MOS or bipolar transistor or a diode. The isolation structure may include a deep implanted floor layer and one or more implanted wells that laterally surround the isolated region. The isolation structure and ESD protection devices are fabricated using a modular process that includes virtually no thermal processing. Since the ESD device is isolated, two or more ESD devices may be electrically “stacked” on one another such that the trigger voltages of the devices are added together to achieve a higher effective trigger voltage.

Abstract: Devices, such as mobile devices, may be exposed to short circuit and output overload events. To protect against such events, mobile devices typically include circuitry to limit currents so as not to exceed a pre-programmed current limit. Various embodiments of the present invention include devices and methods for detecting pre-programmed current limits and for limiting currents in response to such detection. In some embodiments, both the current limit detector and the current limit controller circuitry include scaled current switches. The scaling may be substantially similar between the programmed-current limit detector and the current limit controller circuitry.

Abstract: A stereo class-D audio system includes a first die including four monolithically integrated NMOS high-side devices and a second a second die including four monolithically integrated PMOS low-side devices. The audio system also includes a set of electrical contacts for connecting the high and low-side devices to components within the a stereo class-D audio system, the set of electrical contacts including at least one supply contact for connecting the drains of the high-side devices to a supply voltage (Vcc) and at least one ground contact for connecting the drains of the low-side devices to ground, the electrical contacts also including respective contacts for each source of the high and low-side devices allowing the source of each high-side device to be connected to the source of a respective low-side device to form two H-bridge circuits.

Abstract: An operational transconductance amplifier used in conjunction with a multiple chip voltage feedback technique allows multiple strings of LEDs and current sinks to be efficiently powered by a simple feedback oriented voltage regulator within an appliance. A connected series of differential amplifiers or multiplexors are used to monitor the voltages between the connected LEDs and the current sinks, in order to progressively determine the lowest voltage. The operational transconductance amplifier compares this voltage to a reference voltage and injects or removes current from the feedback node of a voltage regulator, thereby altering the voltage present at the feedback node. This causes the voltage regulator to adjust its output, ensuring that the current sinks of the LED strings have adequate voltage with which to function, even as the LEDs have different forward voltages and the strings are asynchronously enabled and disabled.

Abstract: To avoid shorts between adjacent die pads in mounting a multi-die semiconductor package to a printed circuit board (PCB), one of the die pads is embedded in the polymer capsule, while the other die pad is exposed at the bottom of the package to provide a thermal escape path to the PCB. This arrangement is particularly useful when one of the dice in a multi-die package generates more heat than another die in the package.

Abstract: Processes for forming isolation structures for semiconductor devices include forming a submerged floor isolation region and a filed trench which together enclose an isolated pocket of the substrate. One process aligns the trench to the floor isolation region. In another process a second, narrower trench is formed in the isolated pocket and filled with a dielectric material while the dielectric material is deposited so as to line the walls and floor of the first trench. The substrate does not contain an epitaxial layer, thereby overcoming the many problems associated with fabricating the same.

Abstract: Thermal transfer from a silicon-on-insulator (SOI) die is improved by mounting the die in a bump-on-leadframe manner in a semiconductor package, with solder or other metal bumps connecting the active layer of the SOI die to metal leads used to mount the package on a printed circuit board or other support structure.

Abstract: Mobile devices have limited power sources. In some cases, such as camera flash operations in cell phones or digital cameras, the power required to provide bright illumination is significant and exceeding the battery voltage level. In order to supply burst power or continuous high power to light sources, such as white LEDs (light emitting diodes), mobile devices typically employ charge storage functioning as energy reservoir that can supply the required power. One such charge storage is a supercapacitor that can supply the needed power repeatedly by discharging and recharging. Various embodiments of the present invention include devices and methods for providing the charge energy and controlling the charge and discharge operations.

Abstract: A reverse current comparator for use in switching regulators includes a differential stage configured to encode the difference in voltage between an N and a P input. The differential stage feeds one or more gain stages. At least one of the gain stages includes one or more hysteresis devices. When the voltage of the N input exceeds the voltage of the P input by a predetermined margin, the hysteresis device causes the regulator to enter a triggered state in which it outputs a non-zero output voltage. Subsequent changes to the N and P inputs do not change the regulator output until a RESET input is asserted and which point the regulator enters a reset state and is ready to be triggered.

Abstract: A method for controlling a step down regulator includes (a) generating a first feedback signal as a function of the voltage at the output node; (b) generating a second feedback signal as a function of the voltage at the input node; (c) maintaining the on-time of the low-side switch at a fixed duration; and (d) varying the on-time of the high-side switch to be proportional to the first feedback signal and inversely proportional to the second feedback signal so that the switching frequency of the high and low side switches is approximately constant.

Abstract: A SEPIC converter with over-voltage protection includes a high-side inductor that connects a node Vw to a node Vx. The node Vx is connected, in turn to ground by a power MOSFET. The node Vx is also connected to a node Vy by a first capacitor. The node Vy is connected to ground by a low-side inductor. A rectifier diode further connects the node Vy and a node Vout and an output capacitor is connected between the node Vout and ground. A PWM control circuit is connected to drive the power MOSFET. An over-voltage protection MOSFET connects an input supply to the PWM control circuit and the node Vw. A comparator monitors the voltage of the input supply. If that voltage exceeds a predetermined value Vref the comparator output causes the over-voltage protection MOSFET to disconnect the node Vw and the PWM control circuit from the input supply.

Abstract: An LED driver IC for driving external strings of LEDs comprises a prefix register and a data register connected in series with each other and with the prefix and data registers in other driver ICs. The prefix and data registers of the driver ICs are connected in a daisy chain arrangement with an interface IC. The interface IC loads data identifying a functional latch into the prefix register and data defining a functional condition into the data register of each driver IC. The data in the data register is then transferred to the functional latch to control the functional condition within the LED driver IC.

Abstract: A stereo class-D audio system includes a first die including four monolithically integrated NMOS high-side devices and a second a second die including four monolithically integrated PMOS low-side devices. The audio system also includes a set of electrical contacts for connecting the high and low-side devices to components within the a stereo class-D audio system, the set of electrical contacts including at least one supply contact for connecting the drains of the high-side devices to a supply voltage (Vcc) and at least one ground contact for connecting the drains of the low-side devices to ground, the electrical contacts also including respective contacts for each source of the high and low-side devices allowing the source of each high-side device to be connected to the source of a respective low-side device to form two H-bridge circuits.

Abstract: Thermal transfer from a silicon-on-insulator (SOI) die is improved by mounting the die in a bump-on-leadframe manner in a semiconductor package, with solder or other metal bumps connecting the active layer of the SOI die to metal leads used to mount the package on a printed circuit board or other support structure.

Abstract: In a bump-on-leadframe semiconductor package a metal bump formed on a integrated circuit die is used to facilitate the transfer of heat generated in a semiconductor substrate to a metal heat slug and then to an external mounting surface.