Abstract: The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, in the present invention, a liquid crystal display device has an electrode terminal of a TFT substrate, wherein the electrode is formed on an insulator and is comprised of a conductive layer mainly consisting of copper and an oxide covering an outer part, further the oxide is a layered structure of transparent electrodes, the layered portion having ohmic contact, and the oxide mainly consists of manganese oxide.

Abstract: The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, in the present invention, a liquid crystal display device has an electrode terminal of a TFT substrate, wherein the electrode is formed on an insulator and is comprised of a conductive layer mainly consisting of copper and an oxide covering an outer part, further the oxide is a layered structure of transparent electrodes, the layered portion having ohmic contact, and the oxide mainly consists of manganese oxide.

Abstract: An electrode for silicon carbide includes a silicide region which is provided in contact with a surface of a silicon carbide (SiC) layer and a carbide region which is provided on the silicide region. The silicide region contains a silicide of a first metal in more amount than a carbide of a second metal whose free energy of carbide formation is less than that of silicon (Si). The carbide region contains the carbide of the second metal in more amount than the silicide of the first metal.

Abstract: A liquid crystal display device including, a pair of substrates, a gate electrode of a thin film transistor (TFT) formed on one of the substrates, and a wiring layer connected to the gate electrode or an electrode of the thin film transistor, wherein at least a part of the gate electrode or a part the wiring layer is formed by a layer structured by a pure copper layer and a Cu—Mn alloy layer including Mn, wherein a concentration of Mn in the Cu—Mn alloy layer is more than 0.1 and not more than 20 atomic percentage within a solubility limit of Mn in the copper, and wherein a boundary surface between the Cu—Mn alloy layer and said one of the substrate includes an oxide layer having a Mn oxide layer.

Abstract: A contact plug structure formed on a contact hole of an insulating layer of a semiconductor device includes a metal silicide layer formed on a bottom part of the contact hole of the insulating layer, a manganese oxide layer formed on the metal silicide layer in the contact hole, and a buried copper formed on the manganese oxide layer which substantially fills the contact hole.

Abstract: A liquid crystal display device including, a pair of substrates, a gate electrode of a thin film transistor (TFT) formed on one of the substrates, and a wiring layer connected to the gate electrode or an electrode of the thin film transistor, wherein at least a part of the gate electrode or a part the wiring layer is formed by a layer structured by a pure copper layer and a Cu—Mn alloy layer including Mn, wherein a concentration of Mn in the Cu—Mn alloy layer is more than 0.1 and not more than 20 atomic percentage within a solubility limit of Mn in the copper, and wherein a boundary surface between the Cu—Mn alloy layer and said one of the substrate includes an oxide layer having a Mn oxide layer.

Abstract: A copper interconnection structure includes an insulating layer, an interconnection and a barrier layer. The insulating layer includes silicon (element symbol: Si), carbon (element symbol: C), hydrogen (element symbol: H) and oxygen (element symbol: O). The interconnection is located on the insulating layer, and the interconnection includes copper (element symbol: Cu). The barrier layer is located between the insulating layer and the interconnection. The barrier layer includes an additional element, carbon (element symbol: C) and hydrogen (element symbol: H). The barrier layer has atomic concentrations of carbon (element symbol: C) and hydrogen (element symbol: H) maximized in a region of a thickness of the barrier layer where the atomic concentration of the additional element is maximized.

Abstract: A method of forming an oxide film on a surface of a copper alloy, including the steps of providing a copper alloy including copper and an element selected from the group consisting of Mn, Zn, Ga, Li, Ge, Sr, Ag, Ba, Pr and Nd, and diffusing atoms of the element to a surface of the copper alloy so as to form an oxide film on the surface of the copper alloy, wherein a concentration of the element in the copper alloy is more than 0.1 and not more than 20 atomic percentage and within a solubility limit of the element in the copper.

Abstract: The present invention includes a liquid crystal display device with an oxide film having high adhesiveness to a semiconductor layer or a pixel electrode to thereby prevent oxidation of a wiring material or the like, and includes a source electrode and a drain electrode having high conductivity, and a manufacturing method therefor. In one embodiment of the present invention, a liquid crystal display device has a TFT electrode of a TFT substrate, wherein a source electrode or a drain electrode includes a layer of mainly copper and an oxide covering an outer part of the layer. Further, in the present invention, the semiconductor layer or the pixel electrode and said source electrode or the drain electrode are in ohmic contact in the TFT electrode.

Abstract: The present invention includes a liquid crystal display device with an oxide film having high adhesiveness to a semiconductor layer or a pixel electrode to thereby prevent oxidation of a wiring material or the like, and includes a source electrode and a drain electrode having high conductivity, and a manufacturing method therefor. In one embodiment of the present invention, a liquid crystal display device has a TFT electrode of a TFT substrate, wherein a source electrode or a drain electrode includes a layer of mainly copper and an oxide covering an outer part of the layer. Further, in the present invention, the semiconductor layer or the pixel electrode and said source electrode or the drain electrode are in ohmic contact in the TFT electrode.

Abstract: A copper interconnection structure includes an insulating layer, an interconnection and a barrier layer. The insulating layer includes silicon (element symbol: Si), carbon (element symbol: C), hydrogen (element symbol: H) and oxygen (element symbol: O). The interconnection is located on the insulating layer, and the interconnection includes copper (element symbol: Cu). The barrier layer is located between the insulating layer and the interconnection. The barrier layer includes an additional element, carbon (element symbol: C) and hydrogen (element symbol: H). The barrier layer has atomic concentrations of carbon (element symbol: C) and hydrogen (element symbol: H) maximized in a region of a thickness of the barrier layer where the atomic concentration of the additional element is maximized.

Abstract: A copper interconnection structure includes an insulating layer, an interconnection body including copper in an opening provided on the insulating layer and a barrier layer including a metal element and copper, formed between the insulating layer and the interconnection body. An atomic concentration of the metal element in the barrier layer is accumulated toward an outer surface of the barrier layer facing the insulating layer, and an atomic concentration of copper in the barrier layer is accumulated toward an inner surface of the barrier layer facing the interconnection body. The inner surface of the barrier layer comprises copper surface orientation of {111} and {200}, and an intensity of X-ray diffraction peak from the inner surface of the barrier layer is stronger for the {111} peak than for the {200} peak.

Abstract: A method for forming a copper interconnection structure includes the steps of forming an opening in an insulating layer, forming a copper alloy layer including a metal element on an inner surface of the opening, and conducting a heat treatment on the copper alloy layer so as to form a barrier layer. An enthalpy of oxide formation for the metal element is lower than the enthalpy of oxide formation for copper. The heat treatment is conducted at temperatures ranging from 327° C. to 427° C. and for a time period ranging from 1 minute to 80 minutes.

Abstract: A copper interconnection structure includes an insulating layer, an interconnection body including copper in an opening provided on the insulating layer, and a diffusion barrier layer formed between the insulating layer and the interconnection body. The diffusion barrier layer includes an oxide layer including manganese having a compositional ratio of oxygen to manganese (y/x) less than 2.

Abstract: A copper interconnection structure includes an insulating layer, an interconnection body including copper and a barrier layer surrounding the interconnection body. The barrier layer includes a first barrier layer formed between a first portion of the interconnection body and the insulating layer. The first portion of the interconnection body is part of the interconnection body that faces the insulating layer. The barrier layer also includes a second barrier layer formed on a second portion of the interconnection body. The second portion of the interconnection body is part of the interconnection body not facing the insulating layer. Each of the first and the second barrier layers is formed of an oxide layer including manganese, and each of the first and the second barrier layers has a position where the atomic concentration of manganese is maximized in their thickness direction of the first and the second barrier layers.

Abstract: In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.

Abstract: The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, in the present invention, a liquid crystal display device has an electrode terminal of a TFT substrate, wherein the electrode is formed on an insulator and is comprised of a conductive layer mainly consisting of copper and an oxide covering an outer part, further the oxide is a layered structure of transparent electrodes, the layered portion having ohmic contact, and the oxide mainly consists of manganese oxide.

Abstract: A method of forming an oxide film on a surface of a copper alloy, including the steps of providing a copper alloy including copper and an element selected from the group consisting of Mn, Zn, Ga, Li, Ge, Sr, Ag, Ba, Pr and Nd, and diffusing atoms of the element to a surface of the copper alloy so as to form an oxide film on the surface of the copper alloy, wherein a concentration of the element in the copper alloy is more than 0.1 and not more than 20 atomic percentage and within a solubility limit of the element in the copper.

Abstract: A liquid crystal display device including gate wiring or a gate electrode formed on a substrate on a TFT side of the TFT liquid crystal display device, wherein the wiring or the electrode has a structure of being held between two different insulation layers or insulators, and the structure is comprised of a first layer mainly consisting of copper and a second layer consisting of an oxide covering an outer circumferential part of the first layer, further, the second layer has compositional formula of CuxMnySizO (0<X<Y, 0<Z<Y).

Abstract: The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, in the present invention, a liquid crystal display device has an electrode terminal of a TFT substrate, wherein the electrode is formed on an insulator and is comprised of a conductive layer mainly consisting of copper and an oxide covering an outer part, further the oxide is a layered structure of transparent electrodes, the layered portion having ohmic contact, and the oxide mainly consists of manganese oxide.