Patents Assigned to Advanced Optoelectronic Technology, Inc.
  • Patent number: 10418512
    Abstract: A method for manufacturing light emitting diode crystal grains includes steps of providing a first substrate; forming a buffer layer on the first substrate; forming a UV blocking layer on buffer layer; and forming a plurality of light emitting diode crystal grains on the buffer layer. The emitting diode crystal grains together form a wafer. An auxiliary substrate is provided and coated with an adhesive layer. The auxiliary substrate is pressed to the wafer, the adhesive layer fills gaps between the light emitting diode crystal grains, and solidifies the adhesive layer. The second surface is irradiated and gasified. The first substrate is thus separated from the UV blocking layer and the adhesive layer is dissolved, thus achieving a plurality of light-emitting diode crystal grains.
    Type: Grant
    Filed: December 6, 2017
    Date of Patent: September 17, 2019
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY INC.
    Inventors: Po-Min Tu, Tzu-Chien Hung, Chia-Hui Shen, Chien-Shiang Huang, Chien-Chung Peng, Ya-Wen Lin, Ching-Hsueh Chiu
  • Patent number: 10416225
    Abstract: A detection method for an LED chip comprising the following steps: providing a container with a solvent therein, and putting the LED chips in the container to mix the LED chips with the solvent; providing a base with a circuit therein, the base forms a plurality of receiving holes, a bottom of each receiving holes have an N electrode and a P electrode coupled with the circuit; transferring the solvent and the LED chip mixed in the solvent on the base; detecting the LED chip received in the receiving holes; providing a carrier film and classifying the LED chips on the carrier film.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: September 17, 2019
    Assignee: ADVANCED OPTOELECTRONICS TECHNOLOGY INC.
    Inventors: Po-Min Tu, Tzu-Chien Hung, Chia-Hui Shen, Chien-Shiang Huang, Chien-Chung Peng, Ya-Wen Lin, Ching-Hsueh Chiu
  • Patent number: 10297638
    Abstract: The present invention relates to a flexible light source structure. The flexible light source structure includes a flexible insulating layer, a conductive trace layer formed on the flexible insulating layer, a plurality of light emitting diodes formed on the conductive trace layer and a packaging layer. The packaging layer covers the light emitting diodes and filling the gaps between the light emitting diodes.
    Type: Grant
    Filed: March 14, 2018
    Date of Patent: May 21, 2019
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC
    Inventors: Tzu-Chien Hung, Ya-Chi Lien
  • Patent number: 10263148
    Abstract: A light emitting diode structure includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is divided into a base area and a structural supporting area. The base area includes a bottom portion and a top portion. The bottom portion is wider than the top portion. The top portion protrudes from a surface of the bottom portion along a single direction. The structural supporting area protrudes from the surface of the bottom portion beside the top portion along the same single direction. A top of the structural supporting area is aligned with a top of the top portion. The first electrode is arranged on the top of the top portion. The second electrode is at least arranged on the top of the structural supporting area. The second electrode arranged on the structural supporting area is aligned with the first electrode.
    Type: Grant
    Filed: October 17, 2017
    Date of Patent: April 16, 2019
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC
    Inventors: Tzu-Chien Hung, Chien-Chung Peng, Chien-Shiang Huang, Chia-Hui Shen, Po-Min Tu
  • Patent number: 10222024
    Abstract: A light emitting device includes a light source and a lens. The lens includes a light emitting surface, a top surface, four edge surfaces, and a bottom surface. The light emitting surface includes a central recess and two convex regions connecting the central recess at opposite sides. The light emitting surface is symmetrical about the central recess. The lens further defines a receiving space in the bottom surface and four positioning pins on the bottom surface. The receiving space includes a light incident surface. The two convex regions of the light emitting surface and the light incident surface are non-spherical surfaces. A maximum distance, dn, between the light source and the light incident surface is larger than a maximum distance, Dm, between the light incident surface and the light emitting surface. The light emitting device provides a wide-angle light distribution.
    Type: Grant
    Filed: April 12, 2016
    Date of Patent: March 5, 2019
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: Hsin-Chiang Lin, Lung-Hsin Chen, Wen-Liang Tseng
  • Patent number: 10205048
    Abstract: A method for manufacturing a light emitting diode (LED) chip comprises steps of stacking together a first substrate, a buffer layer, an ultraviolet light (UV) shielding layer, and at least one LED chip in that sequence. An orthogonal projection of each LED chip on the UV shielding layer is located in the scope of the UV shielding layer, and a periphery of the UV shielding layer protrudes from a periphery of the orthogonal projection; mounting a side of each LED chip facing away from the first substrate on the second substrate with an adhesive layer; irradiating UV light from a side of the first substrate facing away from the LED chip, to separate the first substrate from the UV shielding layer; removing the UV light shielding layer, the second substrate, and the adhesive layer from each LED chip.
    Type: Grant
    Filed: November 27, 2017
    Date of Patent: February 12, 2019
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC
    Inventors: Po-Min Tu, Tzu-Chien Hung, Chia-Hui Shen, Chien-Shiang Huang, Chien-Chung Peng
  • Patent number: 10193041
    Abstract: A light emitting diode comprises a light emitting diode chip and a packaging layer. The light emitting diode chip comprises a N-semiconductor layer, a light active layer, and a P-semiconductor layer arranged from a bottom to a top in that sequence, a first electrode, and a second electrode. The first electrode is formed on the P-semiconductor layer. The second electrode is formed on the N-semiconductor layer. The packaging layer covers the light emitting diode chip, and exposes the N-semiconductor layer, the first electrode, and the second electrode. The packaging layer has a through hole separated from a periphery of the light emitting diode chip. A conductive substrate fills the through hole. A first conductive layer is electrically connected to the first electrode and the conductive substrate. The disclosure also provides a method for manufacturing a light emitting diode.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: January 29, 2019
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC
    Inventors: Shih-Chuan Lin, Tsung-Han Chiang, Chun-Yao Lin, Chao-Ming Huang, Hsiu-Ling Hung, Tzu-Chien Hung
  • Patent number: 10177280
    Abstract: A light emitting diode include a light emitting chip, a first reflecting layer surrounding the light emitting diode chip, a first encapsulation layer and a second encapsulation layer covering on the light emitting diode chip. The light emitting chip has a light exiting surface, a first electrode and a second electrode. the first electrode and the second electrode are located opposite to the light exiting surface. Further, a second reflecting layer surrounds the periphery of the light emitting chip and also locates between the first encapsulation layer and the second encapsulation layer. A reflectivity of the first reflecting layer is greater than a reflectivity of the first reflecting layer. A bottom surface of the first electrode and the second electrode are exposed from the first reflecting layer.
    Type: Grant
    Filed: April 20, 2017
    Date of Patent: January 8, 2019
    Assignee: ADVANCED OPTOELECTRONICS TECHNOLOGY, INC
    Inventors: Chien-Chung Peng, Chien-Shiang Huang, Chia-Hui Shen, Tzu-Chien Hung
  • Patent number: 10164142
    Abstract: A flip chip light emitting diode includes a semiconductor layer comprising an epitaxial layer an N-semiconductor layer, a light active layer and a P-semiconductor layer arranged from top to bottom in series. A first electrode mounted on the semiconductor layer. A second electrode mounted on the semiconductor layer. A insulating layer mounted on the semiconductor layer. The N-semiconductor layer protrudes away from the epitaxial layer to form a protruding portion. The light active layer and the P-semiconductor layer mounts on the protruding portion in series. The insulating layer mounts between the first electrode and the protruding portion, the light active layer, the P-semiconductor layer and the second electrode. The flip chip light emitting diode also comprises a supporting portion, the supporting portion is mounted on a top surface of the epitaxial layer by a connecting portion. The connecting portion has same or different materials with the supporting portion.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: December 25, 2018
    Assignees: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC., Innolux Corporation
    Inventors: Po-Min Tu, Chien-Shiang Huang, Chien-Chung Peng, Tzu-Chien Hung, Shih-Cheng Huang, Chang-Ho Chen, Tsau-Hua Hsieh, Jong-Jan Lee, Paul-John Schuele
  • Patent number: 10133133
    Abstract: A liquid crystal display base includes a liquid crystal module, both a power circuit and a integration circuit, a electric device mounted on the power circuit. The liquid crystal module includes a TFT array substrate and a color filter substrate mounted on the TFT array substrate. The power circuit board mounted on the TFT array substrate. The TFT array substrate has a first surface and a second surface opposite to the first surface, a plurality of through holes extend through the first surface and the second surface, each through hole has equal inner diameter from the first surface to the second surface. the TFT array substrate 11 is made of glass, sapphire, ceramic, a plurality of conductive layers are in the plurality of through holes, both the electric device, the integration circuit and the power circuit board are coupled with the liquid crystal module.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: November 20, 2018
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC
    Inventors: Hsin-Chiang Lin, Chien-Cheng Kuo, Pin-Chuan Chen, Lung-Hsin Chen, Wen-Liang Tseng
  • Patent number: 10109770
    Abstract: A light emitting diode includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure out from the top of the epitaxial structure. A method for manufacturing the light emitting diode is also presented. The light emitting diode and the method increase lighting efficiency of the light emitting diode.
    Type: Grant
    Filed: August 22, 2017
    Date of Patent: October 23, 2018
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC
    Inventors: Ching-Hsueh Chiu, Chia-Hung Huang, Ya-Wen Lin, Po-Min Tu, Shih-Cheng Huang
  • Patent number: 10050188
    Abstract: A light emitting diode chip comprises a light emitting diode chip core and a coating layer. The coating layer covers side surfaces of the light emitting diode chip core. And a display composed of the light emitting diode chips is also provided.
    Type: Grant
    Filed: April 10, 2017
    Date of Patent: August 14, 2018
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC
    Inventors: Chia-Hui Shen, Tzu-Chien Hung, Chien-Chung Peng, Chien-Shiang Huang, Shih-Cheng Huang, Chih-Jung Liu
  • Patent number: 10050176
    Abstract: An LED die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer and the light emitting structure are formed on the structure that order. The substrate includes a first electrode, a second electrode and an insulating part. The insulating part is formed between the first electrode and the second electrode. The LED die further includes a second insulating layer and a metal layer which are formed around the pre-growth layer. The present disclosure includes a method for manufacturing the LED die.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: August 14, 2018
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: Ching-Hsueh Chiu, Ya-Wen Lin, Po-Min Tu, Shih-Cheng Huang
  • Patent number: 10020426
    Abstract: A light emitting device includes a base and a light emitting diode chip, the light emitting diode chip is formed on a top surface of the base, an outline of a projection of the light emitting diode chip projected on the top surface of the base is positioned in the top surface of the base. The light emitting device further includes a light reflecting portion, the light reflecting portion is formed on the top surface of the base, the light reflecting portion is defined around the light emitting diode chip, a height of the light reflecting portion is less than a height of the light emitting diode chip.
    Type: Grant
    Filed: April 10, 2017
    Date of Patent: July 10, 2018
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC
    Inventors: Chia-Hui Shen, Tzu-Chien Hung, Chien-Chung Peng, Chien-Shiang Huang, Chih-Jung Liu
  • Patent number: 9982859
    Abstract: An LED light source includes a connecting body and a mounting base. The mounting base includes a mounting platform having a top surface, and an LED unit connected to the top surface, the top surface having good heat-dissipating properties. The LED unit includes LEDs, an LED driving device, and a circuit board. The circuit board includes a first portion for mounting the driving device and a second portion for mounting the LEDs. The first portion is connected to the top surface. The second portion is bent away from the first portion; the LEDs being mounted to outer surface of the integral second portion.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: May 29, 2018
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC
    Inventors: Shiue-Lung Chen, Shr-Min Lin, Yu-Wei Tsai, Chung-Min Chang
  • Patent number: 9978728
    Abstract: A display apparatus and a fabricating method thereof are provided. The display apparatus includes a substrate, a light emitting diode, a first bump, a first insulating layer and a second insulating layer. The light emitting diode has a first surface and a second surface opposite each other, wherein the first surface faces the substrate. The light emitting diode is bonded to the substrate through the first bump. The first insulating layer is disposed on a periphery of the first bump and the light emitting diode, and contacts the first bump and the first surface. The second insulating layer is disposed on the substrate and surrounds at least a portion of the first insulating layer.
    Type: Grant
    Filed: May 24, 2017
    Date of Patent: May 22, 2018
    Assignees: Innolux Corporation, Advanced Optoelectronics Technology Inc.
    Inventors: Chun-Hsien Lin, Tsau-Hua Hsieh, Po-Min Tu, Tzu-Chien Hung, Chien-Chung Peng, Shih-Cheng Huang
  • Patent number: 9897278
    Abstract: A reflector configured for reflecting light emitted from a light emitting diode (LED) toward a desired area is provided. The reflector defines a groove therein for accommodating the LED. Light emitted from the LED is reflected by an inner surface of the reflector toward a desired area located below the reflector, wherein the light reflected out of the reflector travels along a direction opposite to the main emitting direction of the LED. An LED illumination device incorporating the reflector is also provided.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: February 20, 2018
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: Hao-Xiang Lin, Chung-Min Chang
  • Patent number: 9899359
    Abstract: A vertically shallow LED package structure includes at least one LED chip, a package layer, and a first cover layer. Each LED chip includes a first bottom surface. The package layer covers and wraps around each LED chip, and can absorb light emitted by each LED chip and emit light with a different preset wavelength. The package layer includes a second bottom surface facing the first bottom surface, a first side surface perpendicular to the second bottom surface, and a convex surface interconnecting the second bottom surface and the first side surface. The convex surface protrudes away from the LED chip. The convex surface can reflect the light with the preset wavelength towards the first side surface. The first cover layer covers the package layer and exposes the first side surface.
    Type: Grant
    Filed: June 20, 2017
    Date of Patent: February 20, 2018
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: Chin-Fu Cheng, Chih-Hsun Ke
  • Patent number: 9899587
    Abstract: A lead frame for an LED package includes a substrate and a bonding electrode, a first connecting electrode, and a second connecting electrode embedded in the substrate. A top surface of the bonding electrode includes a first bonding surface and a second bonding surface spaced from the first bonding surface. A top surface of the first connecting electrode includes separated first and second connecting surfaces. Top surfaces of the bonding electrode, the first connecting electrode, and the second connecting electrode are exposed, and support and electrically connect with light emitting chips. LED packages can be mounted on the lead frame and electrically connect with each other. The conductive layout of the lead frame further permits installation of a zener diode which can be connected to the LED packages in series or in parallel.
    Type: Grant
    Filed: February 16, 2017
    Date of Patent: February 20, 2018
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: Yau-Tzu Jang, Yu-Liang Huang, Wen-Liang Tseng, Pin-Chuan Chen, Lung-Hsin Chen, Hsing-Fen Lo, Chao-Hsiung Chang, Che-Hsang Huang, Yu-Lun Hsieh
  • Patent number: 9842968
    Abstract: A method for manufacturing a light emitting diode (LED) die includes providing an LED die including a substrate, an N type semiconductor layer, an active layer, and a P type semiconductor layer grown on the substrate in sequence. The N type semiconductor layer, the active layer, and the P type semiconductor layer are etched to define a plurality of recesses and a groove. An insulating layer to cover side surfaces of the recesses and the P type semiconductor layer is formed and a portion of the insulating layer is etched to define an opening to expose a top portion of the P type semiconductor layer. A pair of electrodes is formed and the LED die is cut along the groove to obtain an individual LED die.
    Type: Grant
    Filed: April 10, 2017
    Date of Patent: December 12, 2017
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: Chao-Hsiung Chang, Hou-Te Lin, Pin-Chuan Chen, Lung-Hsin Chen, Wen-Liang Tseng