Abstract: The present invention relates to an effluent abatement/energy generation system, as well as a method, for abating a process effluent gas stream that contains one or more target compounds such as hydrogen gas, ammonia gas, isopropanol, and other volatile organic compounds that are readily oxidizable, and for concurrently generating energy using such process effluent gas stream. Such effluent abatement/energy generation system comprises a purification unit for removing components other than such target compounds from the process effluent gas stream, and an energy generation unit for generating thermal and/or electrical energy. Such energy generation unit may comprise a combustion assembly, such as a microturbine, for direct combustion or catalytic combustion of the target compounds to generate thermal and/or electrical energy. Such energy generation unit may also comprise a fuel cell for using the target compounds to generate electrical energy.

Abstract: The present invention relates to antioxidant analysis for solder plating solutions, by using a complexing solution comprising a molybdenum compound, such as MoO2Cl2, to form a highly colored antioxidant-molybdenum complex, which can be detected and analyzed by UV-Vis spectroscopic, as a basis for concentration determination for the antioxidant.

Abstract: An apparatus and method for abating toxic and/or hazardous gas species in a diluent gas stream line deriving from a by-pass line of a semiconductor process tool, comprising contacting the diluent gas stream with a dry resin sorbent material having an affinity for the toxic and/or hazardous gas species to effect the removal of at least a portion of the toxic and/or hazardous gas species by a chemisorbent or physisorbent reaction between the sorbent bed and the toxic gas component effectively reduces the concentration of the toxic gas component in the process diluent stream to below TLV.

Abstract: A system for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen compounds XFn (wherein X is Cl, Br, or I, and n is an odd integer). Such system comprises a fluorine source, a halogen source for supplying halogen species other than fluorine, a chamber for mixing fluorine with halogen species other than fluorine, and an energy source to supply energy to such chamber to facilitate reaction between fluorine and the halogen species other than fluorine. The chamber may be a semiconductor processing chamber, wherein the in situ generated fluorine radicals and/or fluorine-containing interhalogens are employed for cleaning the processing chamber.

Abstract: Copper precursors of the formula (I): wherein: Cu is Cu(I) or Cu(II); x is an integer having a value of from 0 to 4; each of R, R′ and R″ may be the same as or different from one another and each is independently selected from the group consisting of H, C1-C6 alky), C1-C6 perfluoroalkyl and C6-C10 aryl; when Cu is Cu(I), A is a Lewis base; when Cu is Cu(II), A is: wherein x, R, R′ and R″ are as specified above.

Abstract: A thermopile-based detector for monitoring and/or controlling semiconductor processes, and a method of monitoring and/or controlling semiconductor processes using thermopile-based sensing of conditions in and/or affecting such processes.

Abstract: An apparatus and process for abating at least one acid or hydride gas component or by-product thereof, from an effluent stream deriving from a semiconductor manufacturing process, comprising, a first sorbent bed material having a high capacity sorbent affinity for the acid or hydride gas component, a second and discreet sorbent bed material having a high capture rate sorbent affinity for the same gas component, and a flow path joining the process in gas flow communication with the sorbent bed materials such that effluent is flowed through the sorbent beds, to reduce the acid or hydride gas component. The first sorbent bed material preferably comprises basic copper carbonate and the second sorbent bed preferably comprises at least one of, CuO, AgO, CoO, Co3O4, ZnO, MnO2 and mixtures thereof.

Abstract: A method and system for separating impurities, such as large abrasive particles and foreign matter from an abrasive polishing slurry prior to a Chemical Mechanical Polishing (CMP) procedure performed on a surface of a semiconductor wafer. Impurities greater than about 25 microns are removed by an initial filtration process. The filtrate is then introduced to a solid bowl, sedimentation-type centrifuge to remove particles greater than 0.5 microns thereby providing a polishing slurry for final utilization in a CMP procedure that reduces damage to the surface of the polished semiconductor wafer.

Abstract: An abrasive free formulation for chemical mechanical polishing and method for using the formulation for polishing copper and related materials. The abrasive free formulation has a high removal rate on copper and a low removal rate on barrier material. The abrasive free formulation comprises at least an oxidizing agent and an activating agent.

Abstract: A method of forming a metal oxide ceramic layer is provided, in which a gaseous flow of a vaporized solution of a precursor organo metal compound in a volatile organic solvent, e.g., plus an oxidizing gas, in the presence of a protonating additive substance and/or activating agent in gaseous state, is conducted into contact with a surface of a substrate. The operation is effected under vacuum pressure at a thermal decomposition temperature for converting the precursor compound to its corresponding metal oxide, e.g., having the same oxidation state as in the precursor compound. The additive substance is present in an amount sufficient for facilitating thermal decomposition of the precursor compound and for controlling the in situ oxidation state of the deposited metal and the amount of oxygen in the formed layer, e.g., while suppressing formation of volatile intermediates and of vacancies in the formed layer.

Abstract: An apparatus for cleaning a reaction chamber which has a chamber, a blade apparatus and a reciprocable rotating unit. The chamber has a wall with an interior surface. The blade apparatus has at least one annular mounting member and at least three scraping blades attached peripherally about the annular mounting member and arranged in a parallel relationship to a longitudinal axis of the chamber. The reciprocable movement unit has a reciprocable member pivotally connected at a peripheral position to the blade apparatus. The reciprocable movement unit rotates the scraping blade(s) circumferentially back and forth along the interior surface of the chamber to scrape its interior surface.

Abstract: A semi-aqueous cleaning formulation useful for removing particles from semiconductor wafer substrates formed during a dry etching process for semiconductor devices, the cleaning formulation comprising a buffering system a polar organic solvent, and a fluoride source.

Abstract: Apparatus and method for utilizing recirculated exhaust gas in semiconductor manufacturing system, in a manner substantially reducing the effluent burden on the exhaust treatment system and infrastructure of the semiconductor process facility.

Abstract: A volatile solid-source novel antimony precursor, Br2SbCH3, that may be utilized in semiconductor processing chambers for depositing antimony on a substrate by deposition methods, e.g., chemical vapor deposition, ion implantation, molecular beam epitaxy, diffusion and rapid thermal processing. The novel antimony compound of the invention is synthesized by combining tribromide antimony with trimethylantimony under heating conditions that form a Br2SbCH3 crystalline product.

Abstract: A channelized sorbent material comprises porous sorbent particles characterized by an average pore diameter. Each sorbent particle has at least one interior channel of an average transverse dimension (i.e. transverse diameter) that is at least ten times larger than the average pore diameter of the porous sorbent particle. The interior channel may constitute a single cylindrical through-bore in the sorbent particle, or alternatively, an array of intersecting or non-intersecting channels. The porous sorbent particles preferably comprise bead activated carbon particles. Such channelized sorbent material is particular useful as sorbent media in an adsorption-desorption apparatus for storage and dispensing of a sorbable fluid.

Abstract: The present invention relates to PCGA analytical procedure, in which each PCGA plating/measuring cycle is performed with the stripping and cleaning of test electrode immediately conducted before the equilibrium step, so as to use the metal plate layer formed during a previous plating/measuring cycle as a protective layer for the test electrode. The present invention also relates to PCGA calibration measurement protocol, in which both the calibration measurements and the sample measurement are conducted after a background measurement step.

Abstract: The present invention relates to an electrode assembly that is capable of both solution measurement and in-line self-cleaning. Specifically, such electrode assembly comprises a central electrode and a measurement circuit for solution measurement, and an auxiliary electrode and an auxiliary current sourse for generating gas during intervals between solution measurement cycles, so as to remove any solid or liquid residues that may passivate the central electrode, thereby cleaning and rejuvenating the central electrode and preparing it for the next solution measurement cycle.

Abstract: A system for abating undesired component(s) from a gas stream containing same, such as halocompounds, acid gases, silanes, ammonia, etc., by scrubbing of the effluent gas stream with an aqueous scrubbing medium. Halocompounds, such as fluorine, fluorides, perfluorocarbons, and chlorofluorocarbons, may be scrubbed in the presence of a reducing agent, e.g., sodium thiosulfate, ammonium hydroxide, or potassium iodide. In one embodiment, the scrubbing system includes a first acid gas scrubbing unit operated in cocurrent gas/liquid flow, and a second “polishing” unit operated in countercurrent gas/liquid flow, to achieve high removal efficiency with low consumption of water. The scrubbing system may utilize removable insert beds of packing material, packaged in a foraminous containment structure. The abatement system of the invention has particular utility in the treatment of semiconductor manufacturing process effluents.

Abstract: A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Abstract: A sterilizable container (20) is described which includes a flexible bag (23), the flexible bag (23) having a hole in a flat portion thereof and a hollow connector port (22) fixed thereto, the connector port (22) including a collar portion (22A) and a flange portion (24) defining an internal bore (26) of the connector port (22), the inside surface of the flexible bag (23) being sealed to an outside surface of the flange portion (24) and the collar portion (22A) extending through the hole in the flexible bag (23). Also disclosed is an adapter (10) having an internal bore (12), the connector port (22) and the adapter (10) being sealably connectable by a clamping and sealing device (11, 13) so that the internal bores (12, 16) of the connector port (22) and the adapter (10) are in open communication. Preferably, the adapter (10) has a removable door (16) sealed to the end of the adapter (10) remote from the sealable connection to the connector port (22).