Abstract: An air manager and/or chemical containment apparatus, for environmental control of fumes from wet bench units of semiconductor manufacturing facilities. The air manager system is suitable for installation in an open architecture wet bench or an enclosed mini-environment wet bench, and includes an air source and an air exhaust arranged for flowing air across an open chemical tank, to entrain fumes from chemical in the tank that otherwise may migrate from the immediate vicinity of the tank, and transport such fumes to the exhaust with the air flowed from the air source to the exhaust.

Abstract: A method of improving the physical and/or electrical and/or magnetic properties of a thin film material formed on a substrate, wherein the properties of the thin film material are stress-dependent, by selectively applying force to the substrate during the film formation and/or thereafter during the cooling of the film in the case of a film formed at elevated temperature, to impose through the substrate an applied force condition opposing or enhancing the retention of stress in the product film. The method of the invention has particular utility in the formation of ferroelectric thin films which are grown at temperature above the Curie temperature, and which may be placed in tension during the cooling of the film to provide ferroelectric domains with polarization in the plane of the film.

Abstract: An apparatus and method are provided for treating pollutants in a gaseous stream. The apparatus comprises tubular inlets for mixing a gas stream with other oxidative and inert gases for mixture within a reaction chamber. The reaction chamber is heated by heating elements and has orifices through which cool or heated air enters into the central reaction chamber. A process is also provided whereby additional gases are added to the gaseous stream preferably within the temperature range of 650 C-950 C which minimizes or alleviates the production of NOx.

Abstract: A ferroelectric capacitor device structure, including a ferroelectric stack capacitor comprising a ferroelectric material capacitor element on a substrate containing buried transistor circuitry beneath an insulator layer having a via therein containing a conductive plug to the transistor circuitry, wherein E-fields are structurally confined to the ferroelectric capacitor material element.

Abstract: A precursor composition useful for liquid delivery MOCVD, including SBT precursors dissolved in a solvent system containing tetrahydrofuran. The associated liquid delivery MOCVD process may be carried out with vaporization of the precursor composition on a porous vaporization element having an average pore diameter in the range of from about 50 to about 200 micrometers, with the resultant precursor vapor being admixed with a carrier gas to achieve high efficiency formation of SBT films.

Abstract: By reducing the size of the blocks or pages that are contained in a FLASH EEPROM array that must be erased in a write or erase operation, the size of register needed is reduced, making it easier for the processor to handle smaller blocks of information, reducing the size and complexity of the microprocessor, and increasing the endurance of the FLASH EEPROM allowing it to be used in place of the state of the art EEPROM. Replacing mask ROM by flash EEPROM allows full testing of the code storage area as well as allowing customers to use that space for testing in their manufacturing procedures. The code used for testing can then be cleared and reprogrammed with the final code storage before final shipment.

Abstract: A semiconductor substrate processing system, including a single wafer reactor and a multi-wafer holder positionable in the reactor. The system also optionally includes an automated substrate transport assembly including a multi-wand array for transporting a corresponding plurality of wafers into and out of the reactor, and a multi-wafer cassette for simultaneously supplying multiple wafers to the multi-wand array. The multi-wafer modifications permit ready upgradeability to an existing single wafer reactor and markedly enhance the throughput capacity of the reactor while retaining the film uniformity and deposition process control advantages of the single wafer reactor system.

Abstract: Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal &bgr;-diketonate adducts of the formula M(&bgr;-diketonate)2(L)4 wherein M is the Group II metal and L is tetrahydrofuran. Such source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II thin films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.

Abstract: Apparatus and method for abatement of effluent from multi-component metal oxides deposited by CVD processes using metal source reagent liquid solutions which comprise at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex and a suitable solvent medium for that metal coordination complex e.g., a metalorganic chemical vapor deposition (MOCVD) process for forming barium strontium titanate (BST) thin films on substrates. The effluent is sorptively treated to remove precursor species and MOCVD process by-products from the effluent. An endpoint detector such as a quartz microbalance detector may be employed to detect incipient breakthrough conditions in the sorptive treatment unit.

Abstract: Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one alkoxide group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.

Abstract: A system for storage and dispensing of a sorbate fluid, in which a sorbate fluid is sorptively retained on a sorbent medium and desorption of sorbate fluid from the sorbent medium is facilitated by inputting energy to the sorbent medium including one or more of the following energy input modes: (a) thermal energy input including inductive heating of the sorbent medium, resistive heating of the sorbent medium and/or chemical reaction heating of the sorbent medium; (b) photonic energy input to the sorbent medium; (c) particle bombardment of the sorbent medium; (d) mechanical energy input to the sorbent medium; and (e) application of a chemical potential differential to the sorbate fluid on the sorbent medium.

Abstract: An apparatus and method for the indirect determination of concentrations of additives in metal plating electrolyte solutions, particularly organic additives in Cu-metalization baths for semiconductor manufacturing. The apparatus features a reference electrode housed in an electrically isolated chamber and continuously immersed in the base metal plating solution (without the additive to be measured). An additive concentration determination method comprises electroplating a test electrode at a constant or known current in a mixing chamber wherein the base metal plating solution is mixed with small volumes of the sample and various calibration solutions containing the additive to be measured. Plating potentials between the electrodes are measured and plotted for each of the solution mixtures, and data are extrapolated to determine the concentration of the additive in the sample.

Abstract: A fluid containment system including a vessel for containing a fluid that is discharged from the vessel in use or operation of the system. A pressure monitoring assembly including a strain-responsive sensor is disposed on an exterior wall surface of the vessel, to sense dynamic strain on the wall surface of such vessel that is incident to discharge of fluid from the vessel, and to responsively output a pressure-indicative response. Such arrangement is particularly useful in application to fluid storage and dispensing vessels containing interiorly disposed pressure regulator assemblies and holding liquefied gases or compressed gases, e.g., for use in semiconductor manufacturing operations.

Abstract: A high quality wafer comprising AlxGayInzN, wherein 0<y≦1 and x+y+z=1, characterized by a root mean square surface roughness of less than 1 nm in a 10×10 &mgr;m2 area at its Ga-side. Such wafer is chemically mechanically polished (CMP) at its Ga-side, using a CMP slurry comprising abrasive particles, such as silica or alumina, and an acid or a base. The process of fabricating such high quality AlxGayInzN wafer may include steps of lapping, mechanical polishing, and reducing internal stress of said wafer by thermal annealing or chemical etching for further enhancement of its surface quality. The CMP process is usefully employed to highlight crystal defects on the Ga-side of the AlxGayInzN wafer.

Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): Boric Acid  2-17% Organic amine or mixture of amines 35-70% Water 20-45% Glycol solvent (optional)  0-5% Chelating agent (optional)  0-17% The preferred amines are: Monoethanolamine (MEA) Triethanolamine (TEA).

Abstract: An effluent abatement system for abating hydride species in a hydride-containing effluent, arranged for carrying out the steps of: (1) contacting the hydride-containing effluent with a dry scrubber material comprising a metal oxide that is reactive with the hydride species to remove the hydride species from the effluent, until the capacity of the dry scrubber material for hydride species is at least partially exhausted; and (2) contacting the at least partially exhausted capacity dry scrubber material with an oxidant to at least partially regain the capacity of the dry scrubber material for the hydride species. The system of the invention has particular utility in the treatment of effluent from III-V compound semiconductor manufacturing operations.

Abstract: A high quality wafer comprising AlxGayInzN, wherein 0<y≦1 and x+y+z=1, characterized by a root mean square surface roughness of less than 1 nm in a 10×10 &mgr;m2 area at its Ga-side. Such wafer is chemically mechanically polished (CMP) at its Ga-side, using a CMP slurry comprising abrasive particles, such as silica or alumina, and an acid or a base. The process of fabricating such high quality AlxGayInzN wafer may include steps of lapping, mechanical polishing, and reducing internal stress of said wafer by thermal annealing or chemical etching for further enhancement of its surface quality. The CMP process is usefully employed to highlight crystal defects on the Ga-side of the AlxGayInzN wafer.

Abstract: A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, C1-C8 perfluoroalkyl, alkylsilyl and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSi(NR1R2)4-x, wherein H is hydrogen; x is from 0 to 3; Si is silicon; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, and C1-C8 perfluoroalkyl. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.

Abstract: A method and system for retrofitting an integrated scrubber to provide maximum oxygen content in a controlled decomposition oxidation (CDO) abatement process comprising a thermal/wet integrated scrubber, and a compressed air supply for supplying air to an oxygen separation device that separates the air into a nitrogen-enriched component and an oxygen-enriched component. The oxygen separation device comprises a module, such as a vessel containing ceramic-materials arranged in an adsorbent bed or coated on a substrate. The present invention uses a ceramic oxide material through which only oxygen can diffuse. The composition of the ceramic oxide adsorbent material is such that a significant number of oxygen vacancies exist in the material. By placing either a voltage potential or a pressure gradient across the membrane, oxygen is selectively diffused in and through the oxide material to separate the air supply into an oxygen component for introduction into the integrated scrubber.

Abstract: A fluid storage and dispensing system including a fluid storage and dispensing vessel enclosing an interior volume for holding a fluid. The vessel includes a fluid discharge port for discharging fluid from the vessel. A pressure regulating element in the interior volume of the fluid storage and dispensing vessel is arranged to flow fluid therethrough to the fluid discharge port at a set pressure for dispensing thereof. A controller external of the fluid storage and dispensing vessel is arranged to transmit a control input into the vessel to cause the pressure regulating element to change the set pressure of the fluid flowed from the pressure regulating element to the fluid discharge port. By such arrangement, the respective storage and dispensing operations can have differing regulator set point pressures, as for example a subatmospheric pressure set point for storage and a superatmospheric pressure set point for dispensing.