Abstract: The present disclosure relates to novel and advantageous disposable dispensers. The dispenser may include a dispense assembly comprising an outlet channel in fluid communication with a terminal apparatus, and a pressure source providing a limited supply of fluid or gas, and also includes a collapsible liner that contains a material to be dispensed, the liner detachably secured to the dispense assembly with the outlet channel in fluid communication with an interior of the liner, wherein the material in the liner is dispensed out the liner and through the outlet channel to the terminal apparatus.

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract: An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Abstract: A fluid delivery system adapted to isolate an ampoule and/or process line during purge, including an inlet control valve connecting a source of pressurized gas to a refillable ampoule, an outlet control valve connecting the refillable ampoule to a location of use, a process control valve connecting a process line to the refillable ampoule, a process isolation valve, and a purge supply valve, e.g., a three-way purge supply valve, arranged between the process isolation valve and the process control valve. A method of purging a fluid delivery system is also disclosed, including closing a process isolation valve, connecting a process line to a refillable ampoule, supplying a purge gas through a purge supply valve, e.g., a three-way purge supply valve, and cycling open and close at least once a process control valve coupled to the process line. A manifold for use in refilling an ampoule and purging a fluid supply system is also described.

Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.

Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

Abstract: A polyvinylidene fluoride (PVDF) pyrolyzate adsorbent is described, having utility for storing gases in an adsorbed state, and from which adsorbed gas may be desorbed to supply same for use. The PVDF pyrolyzate adsorbent can be of monolithic unitary form, or in a bead, powder, film, particulate or other finely divided form. The adsorbent is particularly suited for storage and supply of fluorine-containing gases, such as fluorine gas, nitrogen trifluoride, carbo-fluoride gases, and the like. The adsorbent may be utilized in a gas storage and dispensing system, in which the adsorbent is contained in a supply vessel, from which sorbate gas can be selectively dispensed.

Abstract: Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of A Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Abstract: Apparatus and method for generating ruthenium tetraoxide in situ for use in vapor deposition, e.g., atomic layer deposition (ALD), of ruthenium-containing films on microelectronic device substrates. The ruthenium tetraoxide can be generated on demand by reaction of ruthenium or ruthenium dioxide with an oxic gas such as oxygen or ozone. In one implementation, ruthenium tetraoxide thus generated is utilized with a strontium organometallic precursor for atomic layer deposition of strontium ruthenate films of extremely high smoothness and purity.

Abstract: A monitoring system for monitoring fluid in a fluid supply vessel during operation including dispensing of fluid from the fluid supply vessel. The monitoring system includes (i) one or more sensors for monitoring a characteristic of the fluid supply vessel or the fluid dispensed therefrom, (ii) a data acquisition module operatively coupled to the one or more sensors to receive monitoring data therefrom and responsively generate an output correlative to the characteristic monitored by the one or more sensors, and (iii) a processor and display operatively coupled with the data acquisition module and arranged to process the output from the data acquisition module and responsively output a graphical representation of fluid in the fluid supply vessel, billing documents, usage reports, and/or resupply requests.

Abstract: A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.

Abstract: A carbon adsorbent having the characteristics of: a nitrogen micropore volume at 77° K, measured as liquid capacity, that is greater than 0.30 mL/g; a neopentane capacity measured at 273° K and 1 bar, measured as liquid capacity, that is less than 7% of the nitrogen micropore volume, measured as liquid capacity; and an access pore size in a range of from 0.50 to 0.62 nm. Such adsorbent is usefully employed for contacting with hydrocarbon mixtures to adsorb low-octane, linear and mono- or di-substituted alkanes therefrom, and thereby increase octane rating, e.g., of an isomerization naphtha raffinate. Adsorption processes and apparatus are also described, in which the carbon adsorbent can be utilized for production of higher octane rating hydrocarbon mixtures.

Abstract: An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.

Abstract: An ion implantation method, in which a dopant source composition is ionized to form dopant ions, and the dopant ions are implanted in a substrate. The dopant source composition includes cluster phosphorus or cluster arsenic compounds, for achieving P- and/or As-doping, in the production of doped articles of manufacture, e.g., silicon wafers or precursor structures for manufacturing microelectronic devices.

Abstract: The present disclosure relates to novel and advantageous connector assemblies for use with a liner-based assembly. In one embodiment, a connector assembly for use with a liner-based assembly can include a pressure port, a dispense port, a headspace removal port, and a locking mechanism. The pressure port can be adapted for connection to a pressure source. The dispense port can be adapted for fluid communication with a source of material to be dispensed from the liner-based assembly. The headspace removal port may be configured for removing a gas from the liner-based assembly. The locking mechanism may be used for locking the connector to the liner-based assembly when contents therein are under pressure. In some embodiments, the dispense port and headspace removal port may be operably coupled providing a flow path for recirculation of the contents within a liner of the liner-based assembly.

Abstract: An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an aqueous solution of the cerium (IV) complex or salt. In another embodiment, the extended lifetime is achieved by providing an aqueous solution of a cerium (IV) complex or salt and a cerium (III) complex or salt. The cerium (III) complex or salt can be added or it can be generated in-situ by introducing a reducing agent into the aqueous solution of the cerium (IV) complex or salt. The aqueous solution can be used to remove a mask material, especially an ion implanted and patterned photoresist, from a surface of a semiconductor substrate.

Abstract: A deposition process to form a conformal phase change material film on the surface of a substrate to produce a memory device wafer comprises providing a substrate to a chamber of a deposition system; providing an activation region; introducing one or more precursors into the chamber upstream of the substrate; optionally introducing one or more co-reactants upstream of the substrate; activating the one or more precursors; heating the substrate; and depositing the phase change material film on the substrate from the one or more precursors by chemical vapor deposition. The deposited phase change material film comprises GexSbyTezAm in which A is a dopant selected from the group of N, C, In, Sn, and Se. In one implementation, the process is carried out to form GST films doped with carbon and nitrogen, to impart beneficial film growth and performance properties to the film.

Abstract: Processes for recycling electronic components removed from printed wire boards, whereby precious metals and base metals are extracted from the electronic components using environmentally friendly compositions. At least gold, silver and copper ions can be extracted from the electronic components and reduced to their respective metals using the processes and compositions described herein.

Abstract: A fluid storage and dispensing apparatus including a fluid storage and dispensing vessel having a rectangular parallelepiped shape, and an integrated gas cabinet assembly including such fluid storage and dispensing apparatus and/or a point-of-use ventilation gas scrubber in the vented gas cabinet. By the use of physical adsorbent and chemical sorbent media, the gas cabinet can be enhanced in safety of operation, e.g., where the process gas supplied from the gas cabinet is of a toxic or otherwise hazardous character.