Patents Assigned to Advanced Technology Materials
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Patent number: 5679815Abstract: Niobium and tantalum compounds suitable for use as chemical vapor deposition source reagents, and a process for depositing niobium- or tantalum-containing coatings using the compounds. The compounds have formulaM(OR.sup.1).sub.x (R.sup.2 --C(GH)--C--C(G)--R.sup.3).sub.ywherein M is tantalum or niobium; G is oxygen or sulfur; and R.sup.1, R.sup.2, and R.sup.3 are independently selected hydrocarbyl, fluoroalkyl or alkoxy groups.Type: GrantFiled: September 16, 1994Date of Patent: October 21, 1997Assignee: Advanced Technology Materials, Inc.Inventors: Peter S. Kirlin, Brian A. Vaartstra, Douglas Gordon, Timothy E. Glassman
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Patent number: 5680008Abstract: This invention relates to electron emitting semiconductor materials for use in dynodes, dynode devices incorporating such materials, and methods of making the dynode devices. In particular, the invention relates to emissive materials having an electron affinity that is negative and which have low resistivity. The invention also relates to electronic devices such as electron multipliers, ion detectors, and photomultiplier tubes incorporating the dynodes comprising the materials, and to methods for fabricating the electronic devices. The secondary electron emitters of the present invention comprise wide bandgap semiconductor films selected from diamond, AlN, BN, Ga.sub.1-y Al.sub.y N where 0.ltoreq.y.ltoreq.1 and (AlN).sub.x (SiC).sub.1-x where 0.2.ltoreq.x.ltoreq.1. The films are preferably single crystal or polycrystalline. The films may be continuous or patterned.Type: GrantFiled: April 5, 1995Date of Patent: October 21, 1997Assignee: Advanced Technology Materials, Inc.Inventors: George R. Brandes, John B. Miller
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Patent number: 5677002Abstract: Niobium and tantalum compounds suitable for use as chemical vapor deposition source reagents, and a process for depositing niobium- or tantalum-containing coatings using the compounds. The compounds have formulaM(OR.sup.1).sub.x (R.sup.2 --C(GH)--C--C(G)--R.sup.3).sub.ywherein M is tantalum or niobium; G is oxygen or sulfur; and R.sup.1, R.sup.2, and R.sup.Type: GrantFiled: May 30, 1995Date of Patent: October 14, 1997Assignee: Advanced Technology MaterialsInventors: Peter S. Kirlin, Brian A. Vaartstra, Douglas Gordon, Timothy E. Glassman
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Patent number: 5676735Abstract: A system for recovery of adsorbed gas remaining in a used storage and dispensing vessel containing sorbent material having residual sorbate gas thereon, when the vessel is taken out of service, in which the used storage and dispensing vessel is coupled in flow communication with at least one fresh storage and dispensing vessel containing sorbent material therein having sorptive capacity for the residual sorbate gas. The fresh vessel is maintained in a first zone and the used vessel is maintained in a second zone, at temperature and/or pressure conditions relative to one another that cause the residual sorbate gas to desorb from the sorbent material in the used storage and dispensing vessel and flow into the fresh storage and dispensing vessel for sorption of the residual sorbate gas on the sorbent material in the fresh storage and dispensing vessel.Type: GrantFiled: October 31, 1996Date of Patent: October 14, 1997Assignee: Advanced Technology Materials, Inc.Inventor: James V. McManus
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Patent number: 5663518Abstract: A method for the self-protection of an aircraft or the like against radar-guided missiles and a self-protection device for use in aircraft and the like against radar-guided missiles, which enables in-flight cutting and dispensing of chaff dipoles of a preselected length into the airstream along the flight path of the aircraft. The device comprises a housing enclosing a motor having a flywheel providing a motor inertia that enables the motor to maintain a substantially constant rotational speed when a load is applied, a magnetic clutch, gearing for rotating a platen roller and a cutter roller, as well as means for controlling the operation of the device, and an exit opening with a spoiler for dispensing the cut dipoles into the airstream.Type: GrantFiled: June 6, 1994Date of Patent: September 2, 1997Assignee: Advanced Technology Materials, Inc.Inventor: Marcel Widmer
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Patent number: 5661074Abstract: A green-blue to ultraviolet light-emitting optical device, e.g. a green-blue to ultraviolet emitting laser or a green-blue to ultraviolet emitting diode, comprising a green-blue to ultraviolet light emitting gallium nitride material on a base structure including a silicon carbide substrate, which preferably consists of 2H--SiC, 4H--SiC, or a-axis oriented 6H--SiC. The carrier mobility and the transparency of the silicon carbide substrate are optimized by the selection of orientation and polytype, thus enhancing device performance. The light-emitting diodes may incorporate a structural modification to increase the light output comprising a dielectric Bragg mirror beneath the LED structure, made of alternating layers of AlN, GaN, InN or their alloys. Methods for making such light-emitting diodes are provided, including a technique for defining individual devices by mesa etching which avoids possible damage to the active area during dicing.Type: GrantFiled: May 24, 1995Date of Patent: August 26, 1997Assignee: Advanced Technology Materials, Inc.Inventor: Michael A. Tischler
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Patent number: 5653806Abstract: An apparatus for dispersingly delivering a vapor-phase source reagent material containing a deposition species, to a substrate for deposition of such species thereon. The apparatus includes a disperser housing having a front wall with an array of discharge openings therein for discharging vapor-phase source reagent material from the housing interior volume onto a wafer or other substrate article mounted in vapor-receiving relationship to the disperser housing front wall. The front wall includes interior heat transfer passages arranged in a manifolded conformation for highly efficient temperature stabilization of the vapor discharged from the housing discharge openings, to produce highly uniform thickness deposited films on the substrate.Type: GrantFiled: March 10, 1995Date of Patent: August 5, 1997Assignee: Advanced Technology Materials, Inc.Inventor: Peter C. Van Buskirk
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Patent number: 5593783Abstract: Diamond and diamond-like materials having photochemically modified surfaces, and a process for photochemically modifying the surface of diamond and diamond-like materials. Preferably, the substrate to be modified is a single crystal, polycrystalline film or powder of diamond or any silicon carbide polytype. Photochemical modification of the surface enables the addition or exchange of specific surface functional groups. These surface modifiers change the chemical, adhesive and electronic properties of the diamond and diamond-like substrate materials. The modified subtrates are useful for producing semiconductor devices for use at high temperatures, high powers, and in otherwise harsh environments.Type: GrantFiled: June 17, 1994Date of Patent: January 14, 1997Assignee: Advanced Technology Materials, Inc.Inventor: John B. Miller
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Patent number: 5576928Abstract: A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g. palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive film can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material.Type: GrantFiled: June 7, 1995Date of Patent: November 19, 1996Assignees: Texas Instruments Incorporated, Advanced Technology Materials, Inc.Inventors: Scott R. Summerfelt, Howard R. Beratan, Peter S. Kirlin, Bruce E. Gnade
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Patent number: 5571621Abstract: An infrared radiation-interactive article comprising a supported or unsupported oxidizable metal film of an infrared radiation-interactive size and shape, with an oxidation-promoting salt in contact with the metal film, arranged so that in exposure to ambient moisture, the metal film is oxidizable to an infrared radiation non-interactive form. The article of the invention may be employed to carry out a method of generating a transient infrared radiation response, e.g., an infrared radiation reflectance signature, or infrared radiation absorption, at a selected locus receiving infrared radiation incident thereon, by disposing at the locus an infrared radiation interactively-effective amount of such infrared radiation-interactive article.Type: GrantFiled: June 7, 1995Date of Patent: November 5, 1996Assignee: Advanced Technology Materials, Inc.Inventors: Ward C. Stevens, Edward A. Sturm
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Patent number: 5566045Abstract: A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive film can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material.Type: GrantFiled: August 1, 1994Date of Patent: October 15, 1996Assignees: Texas Instruments, Inc., Advanced Technology Materials, Inc.Inventors: Scott R. Summerfelt, Howard R. Beratan, Peter S. Kirlin, Bruce E. Gnade
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Patent number: 5536323Abstract: A process and apparatus for delivering an involatile reagent in gaseous form, wherein an involatile reagent source liquid is flash vaporized on a vaporization matrix structure at elevated temperature. A carrier gas may be flowed past the flash vaporzation matrix structure to yield a carrier gas mixture containing the flash vaporized source reagent. The matrix structure preferably has a high surface-to-volume ratio, and may sutiably comprise a foraminous matrix element such as screen mesh onto which the reagent source liquid is distributed for flash vaporization. The invention is particularly useful for delivery of Group II reagents and compounds and complexes of early transition metals such as zirconium and hafnium, and may be usefully employed with Group II beta-diketonate source layers, e.g.Type: GrantFiled: July 25, 1994Date of Patent: July 16, 1996Assignee: Advanced Technology Materials, Inc.Inventors: Peter S. Kirlin, Robin L. Binder, Robin A. Gardiner, Peter V. Buskirk, Jiming Zhang, Gregory Stauf
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Patent number: 5518528Abstract: An adsorption-desorption apparatus, for storage and dispensing of a gas selected from the group consisting of hydride gases, halide gases, and organometallic Group V gaseous compounds, wherein the gas to be dispensed is adsorbed on a physical sorbent medium and selectively dispensed by pressure differential desorption of the sorbate gas from the sorbent material. The sorbent medium preferably is devoid of concentrations of water, metals, and oxidic transition metal species which decompose the sorbate gas in the storage and dispensing vessel, e.g., containing less than 500 parts-per-million by weight of water and oxidic transition metal species, based on the weight of the physical sorbent medium. A cryopumping gas storage and delivery system is also disclosed for neat, high pressure, high purity delivery of the dispensed product gas.Type: GrantFiled: October 13, 1994Date of Patent: May 21, 1996Assignee: Advanced Technology Materials, Inc.Inventors: Glenn M. Tom, James V. McManus
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Patent number: 5487356Abstract: A chemical vapor deposition method for forming films or coatings of metal oxide films showing a giant magnetoresistive effect, with the metal oxides having the formula La.sub.x A.sub.1-x MnO.sub.3 wherein A is selected from the group consisting of barium, calcium, manganese, and strontium, and x is a number in the range of from 0.2 to 0.4. The method uses a liquid source delivery CVD approach, wherein source reagent solution precursor is flash vaporized and is delivered to a CVD chamber, wherein it decomposes to deposit the multicomponent metal oxide films with well-controlled stoichiometry.Type: GrantFiled: November 28, 1994Date of Patent: January 30, 1996Assignee: Advanced Technology Materials, Inc.Inventors: Yi-Oun Li, Jiming Zhang
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Patent number: 5453494Abstract: Metal organic chemical vapor deposition (MOCVD) source reagents useful for formation of metal-containing films, such as thin film copper oxide high temperature superconductor (HTSC) materials. The source reagents have the formula MAyX wherein: M is a metal such as Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm Yb, Lu Bi, Tl, Y or Pb; A is a monodentate or multidentate organic ligand; y is 2 or 3; MAy is a stable sub-complex at STP conditions; and X is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O, and F. The ligand A may for example be selected from beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases.Type: GrantFiled: January 18, 1994Date of Patent: September 26, 1995Assignee: Advanced Technology Materials, Inc.Inventors: Peter S. Kirlin, Duncan W. Brown, Robin A. Gardiner
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Patent number: 5442200Abstract: Stable, high temperature electrical contacts to silicon carbide formed using a unique silicide formation process that employs a sacrificial silicon layer between the silicon carbide and the contacting metal, which forms a metal silicide interlayer providing the resulting contact with low specific contact resistance and high electrical and structural stability. The contact interface is formed by reaction below the semiconductor surface, and thus the in-situ silicide formation process is insensitive to surface impurities and oxides and permits the controlled formation of silicides without the formation of excess carbon and carbides at the contact interface. The silicon layer may optionally be doped in situ during growth or implanted with dopants after growth, to lower the contact resistance and enhance its operational stability.Type: GrantFiled: June 3, 1994Date of Patent: August 15, 1995Assignee: Advanced Technology Materials, Inc.Inventor: Michael A. Tischler
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Apparatus and method for protection of pumps used for delivery of air- or moisture-sensitive liquids
Patent number: 5431957Abstract: A means and method for protecting the moving parts of a pump that is used to pump air- or moisture-sensitive liquids, comprising blanketing the wetted parts of the pump with an inert medium and/or admixing the process liquid with a low vapor pressure liquid component effective for inhibiting corrosion or particulate formation. In another aspect, the invention relates to an apparatus for protecting the wetted, moving parts of pumps used to pump air- or moisture-sensitive liquids. The apparatus provides a mantle within which an inert medium is flowed around the moving, wetted pump parts to continually purge them of any air or moisture.Type: GrantFiled: August 15, 1994Date of Patent: July 11, 1995Assignee: Advanced Technology Materials, Inc.Inventors: Robin A. Gardiner, Peter S. Kirlin -
Patent number: 5362328Abstract: A means and method for protecting a source reagent vaporizer structure from the harmful effects of solid build-up occurring during its use in chemical vapor deposition (CVD). Vaporizer structures may be used to provide a means of transferring relatively involatile source reagents or reagent solutions into CVD reactors and often are high surface area, highly efficient heat transfer structures. When vaporizers are used in CVD, often some premature decomposition of the source reagent occurs on the vaporizer element as well as some oxidative decomposition to produce solid products which cause clogging and inefficient vaporization. The invention provides both apparatus and method to periodically flush clean such vaporizer elements to increase their consistency, reliability, and average time between servicings.Type: GrantFiled: January 7, 1994Date of Patent: November 8, 1994Assignee: Advanced Technology Materials, Inc.Inventors: Robin A. Gardiner, Peter Van Buskirk, Peter S. Kirlin
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Patent number: 5352519Abstract: An article comprising a non-conductive substrate having a sub-micron thickness of a sulfur-doped oxidizable metal coating thereon. Optionally, the sulfur-doped oxidizable metal-coated substrate may be further coated with (i) a promoter metal which is galvanically effective to promote the corrosion of the oxidizable metal, discontinuously coated on the oxidizable metal coating, and/or (ii) a salt, to accelerate the galvanic corrosion reaction by which the oxidizable metal coating is oxidized. When utilized in a form comprising fine diameter substrate elements such as glass or ceramic filaments, the resulting product may usefully be employed as an evanescent chaff. In the presence of atmospheric moisture, such evanescent chaff undergoes oxidation of the oxidizable metal coating so that the radar signature of the chaff transiently decays.Type: GrantFiled: November 27, 1992Date of Patent: October 4, 1994Assignee: Advanced Technology Materials, Inc.Inventors: Ward C. Stevens, Edward A. Sturm, Bruce C. Roman
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Apparatus and method for protection of pumps used for delivery of air- or moisture-sensitive liquids
Patent number: 5337651Abstract: A means and method for protecting the moving parts of a pump that is used to pump air- or moisture-sensitive liquids, comprising blanketing the wetted parts of the pump with an inert medium and/or admixing the process liquid with a low vapor pressure liquid component effective for inhibiting corrosion or particulate formation. In another aspect, the invention relates to an apparatus for protecting the wetted, moving parts of pumps used to pump air- or moisture-sensitive liquids. The apparatus provides a mantle within which an inert medium is flowed around the moving, wetted pump parts to continually purge them of any air or moisture.Type: GrantFiled: March 18, 1993Date of Patent: August 16, 1994Assignee: Advanced Technology Materials, Inc.Inventors: Robin A. Gardiner, Peter S. Kirlin