Patents Assigned to Advanced Technology Materials
  • Patent number: 4983363
    Abstract: An apparatus for purifying a gaseous mixture comprising arsine, phosphine, ammonia, and/or inert gases, to remove Lewis acid and/or oxidant impurities therefrom, comprising a vessel containing a bed of a scavenger, the scavenger including a support having associated therewith an anion which is effective to remove such impurities, such anion being selected from one or more members of the group consisting of: (i) carbanions whose corresponding protonated compounds have a pK.sub.a value of from about 22 to about 36; and (ii) anions formed by reaction of such carbanions with the primary component of the mixture.
    Type: Grant
    Filed: March 3, 1988
    Date of Patent: January 8, 1991
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Glenn M. Tom, Duncan W. Brown
  • Patent number: 4950419
    Abstract: A scavenger for purifying inert gas mixtures to remove Lewis acid and oxidant impurities therefrom, comprising (i) an inert inorganic support, and (ii) an active scavenging species on the support, formed by deposition thereon of an organometallic precursor and pyrolysis thereof at a selected elevated temperature. The organometallic precursor is an alkyl metal compound comprising a metal of Group IA, IIA, and/or IIIA, wherein the pyrolysis temperature may range from about 150.degree. C. to about 250.degree. C., depending on the specific alkyl metal compound employed as the precursor. Also disclosed are: a corresponding method of making the scavenger; a process for purifying inert gases by contacting same with the scavenger; and a vessel containing a bed of the scavenger, useful as an apparatus for purifying inert gases.
    Type: Grant
    Filed: March 17, 1988
    Date of Patent: August 21, 1990
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Glenn M. Tom, Duncan W. Brown
  • Patent number: 4936877
    Abstract: A gas delivery system for supplying a vapor phase constituent at low concentration in a carrier gas, wherein the carrier gas is flowed through a contacting zone in which is disposed a permeable film through which the vapor phase constituent permeates into the contacing zone, to yield a product gas mixture comprising the vapor phase constituent and the carrier gas. In a particularly preferred embodiment, concentration of the vapor phase constituent in the product gas mixture is sensed, e.g., by a surface acoustical wave (SAW) concentration sensor device, and the concentration sensing is employed to controllably adjust the flow rate of the carrier gas flowed through the contacting zone, to maintain a selected delivery rate and concentration of the vapor phase constituent in the product gas mixture.
    Type: Grant
    Filed: July 18, 1989
    Date of Patent: June 26, 1990
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Steven J. Hultquist, Glenn M. Tom
  • Patent number: 4935296
    Abstract: A metal-coated substrate, e.g., of glass, ceramic, or a hydroxy-functionalized material, wherein the improvement comprises a polysilicate, titania, or alumina interlayer between the substrate and the metal coating. The interlayer may have a porous microstructure, e.g., a polysilicate interlayer with an average pore size on the order of 50-150 Angstroms.Such articles, e.g., in the form of metal-coated fibers, may suitably be employed as reinforcing media in material composites having utility in structural applications, such as EMI shielding elements.Also disclosed is a corresponding method for forming a metal coating on a substrate by the provision of an interlayer of the above type. The interlayer may suitably be formed by applying to the substrate a sol gel dispersion of the polysilicate, titania, or alumina material, followed by drying of the applied dispersion.
    Type: Grant
    Filed: October 31, 1988
    Date of Patent: June 19, 1990
    Assignee: Advanced Technology Materials, Inc.
    Inventor: Ward C. Stevens
  • Patent number: 4925646
    Abstract: A process for drying a gaseous hydrogen halide of the formula HX, wherein X is bromine, Chlorine, FLuorine, or iodine, to remove water impurity therefrom, in which a scavenger precursor composition is provided, including a support having associated therewith partially or fully alkylated metal alkyl compounds or pendant groups. The precursor composition is reacted with gaseous hydrogen halide to convert the metal alkyl compounds and/or pendant functional groups to the corresponding metal halide compounds and/or pendant functional groups, which in turn react with the water impurity to produce an essentially completely water-free (below 0.1 ppm) gaseous hydrogen halide effluent. The process of the invention has utility for producing high purity, anhydrous gaseous hydrogen halides for semiconductor manufacturing operations.
    Type: Grant
    Filed: May 25, 1989
    Date of Patent: May 15, 1990
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Glenn M. Tom, Duncan W. Brown
  • Patent number: 4865822
    Abstract: A scavenger, having utility for purifying a mixture comprising:(i) a primary component selected from one or more members of the group consisting of hydrogen selenide and hydrogen telluride, and(ii) impurities selected from one or more members of the group consisting of moisture and oxidants, comprising:(a) a support; and(b) associated with said support, one or more members of the group consisting of:(I) precusor compounds of the formula R.sub.3-x AlH.sub.x, wherein x is 0 or 1, and R is a hydrocarbon radical containing from 1 to 12 carbon atoms; and(II) aluminum chalconides of the formula Al.sub.2 M.sub.3, wherein M is selenium or tellurium.Illustrative supports useful in such scavenger include aluminosilicates, alumina, silica, carbon, and macroreticulate polymers. A process and apparatus are disclosed for purifying hyhrogen selenide and/or hydrogen telluride, to remove moisture and/or oxidant impurities therefrom, in which a bed of the scavenger is employed.
    Type: Grant
    Filed: October 11, 1988
    Date of Patent: September 12, 1989
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Glenn M. Tom, Duncan W. Brown
  • Patent number: 4853148
    Abstract: A process for drying a gaseous hydrogen halide of the formula HX, wherein X is selected from the group consisting of bromine, chlorine, fluorine, and iodine, to remove water impurity therefrom, comprising:contacting the water impurity-containing gaseous hydrogen halide with a scavenger including a support having associated therewith one or more members of the group consisting of:(a) an active scavenging moiety selected from one or more members of the group consisting of:(i) metal halide compounds dispersed in the support, of the formula MX.sub.y ; and(ii) metal halide pendant functional groups of the formula -MX.sub.
    Type: Grant
    Filed: March 24, 1987
    Date of Patent: August 1, 1989
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Glenn M. Tom, Duncan W. Brown
  • Patent number: 4839402
    Abstract: A metal-coated substrate, e.g., of glass, ceramic, or a hydroxy-functionalized material, wherein the improvement comprises a polysilicate, titania, or alumina interlayer between the substrate and the metal coating. The interlayer may have a porous microstructure, e.g., a polysilicate interlayer with an average pore size on the order of 50-150 Angstroms.Such articles, e.g., in the form of metal-coated fibers, may suitably be employed as reinforcing media in material composites having utility in structural applications, such as EMI shielding elements.Also disclosed is a corresponding method for forming a metal coating on a substrate by the provision of an interlayer of the above type. The interlayer may suitably be formed by applying to the substrate a sol gel dispersion of the polysilicate, titania, or alumina material, followed by drying of the applied dispersion.
    Type: Grant
    Filed: February 11, 1988
    Date of Patent: June 13, 1989
    Assignee: Advanced Technology Materials, Inc.
    Inventor: Ward C. Stevens
  • Patent number: 4797227
    Abstract: A scavenger, having utility for purifying a mixture comprising:(i) a primary component selected from one or more members of the group consisting of hydrogen selenide and hydrogen telluride, and(ii) impurities selected from one or more members of the group consisting of moisture and oxidants, comprising:(a) a support; and(b) associated with said support, one or more members of the group consisting of:(I) precursor compounds of the formula R.sub.3-x AlH.sub.x, wherein x is 0 or 1, and R is a hydrocarbon radical containing from 1 to 12 carbon atoms; and(II) aluminum chalconides of the formula Al.sub.2 M.sub.3, wherein M is selenium or tellurium.Illustrative supports useful in such scavenger include aluminosilicates, alumina, silica, carbon, and macroreticulate polymers. A process and apparatus are disclosed for purifying hydrogen selenide and/or hydrogen telluride, to remove moisture and/or oxidant impurities therefrom, in which a bed of the scavenger is employed.
    Type: Grant
    Filed: July 31, 1987
    Date of Patent: January 10, 1989
    Assignee: Advanced Technology Materials Inc.
    Inventors: Glenn M. Tom, Duncan W. Brown
  • Patent number: 4789563
    Abstract: A metal-coated substrate, e.g., of glass, ceramic, or a hydroxy-functionalized material, wherein the improvement comprises a polysilicate, titania, or alumina interlayer between the substrate and the metal coating. The interlayer may have a porous microstructure, e.g., a polysilicate interlayer with an average pore size on the order of 50-150 Angstroms.Such articles, e.g., in the form of metal-coated fibers, may suitably be employed as reinforcing media in material composites having utility in structural applications, such as EMI shielding elements.Also disclosed is a corresponding method for forming a metal coating on a substrate by the provision of an interlayer of the above type. The interlayer may suitably be formed by applying to the substrate a sol gel dispersion of the polysilicate, titania, or alumina material, followed by drying of the applied dispersion.
    Type: Grant
    Filed: February 11, 1988
    Date of Patent: December 6, 1988
    Assignee: Advanced Technology Materials, Inc.
    Inventor: Ward C. Stevens
  • Patent number: 4781900
    Abstract: A process for purifying a gaseous mixture comprising arsine, phosphine, ammonia, and/or inert gases, to remove Lewis acid and/or oxidant impurities therefrom, comprising contacting the mixture with a scavenger including a support having associated therewith an anion which is effective to remove such impurities, such anion being selected from one or more members of the group consisting of: (i) carbanions whose corresponding protonated compounds have a pK.sub.a value of from about 22 to about 36; and (ii) anions formed by reaction of such carbanions with the primary component of the mixture.
    Type: Grant
    Filed: February 11, 1988
    Date of Patent: November 1, 1988
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Glenn M. Tom, Duncan W. Brown
  • Patent number: 4761395
    Abstract: A process for purifying a gaseous mixture comprising arsine, phosphine, ammonia, and/or inert gases, to remove Lewis acid and/or oxidant impurities therefrom, comprising contacting the mixture with a scavenger including a support having associated therewith an anion which is effective to remove such impurities, such anion being selected from one or more members of the group consisting of: (i) carbanions whose corresponding protonated compounds have a pK.sub.a value of from about 22 to about 36; and (ii) anions formed by reaction of such carbanions with the primary component of the mixture.
    Type: Grant
    Filed: March 24, 1987
    Date of Patent: August 2, 1988
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Glenn M. Tom, Duncan W. Brown
  • Patent number: 4759950
    Abstract: A method for metallizing a filament, wherein the filament is initially coated with a sol gel dispersion of polysilicate, titania, or alumina, and after drying at elevated temperature to form a porous interlayer coating on the filament, a nickel coating is deposited thereon from gaseous nickel carbonyl in a metallizing zone. The gaseous nickel carbonyl is produced in a fluidized bed of particulate nickel through which carbon monoxide make-up and at least a portion of the effluent gases discharged from the metallizing zone are flowed. The resulting nickel coated filament may be cut into fibers for use as a reinforcement in composite materials such as those utilized in electromagnetic inteference (EMI) shielding applications.
    Type: Grant
    Filed: September 26, 1986
    Date of Patent: July 26, 1988
    Assignee: Advance Technology Materials, Inc.
    Inventor: Ward C. Stevens
  • Patent number: 4738896
    Abstract: A metal-coated substrate, e.g., of glass, ceramic, or a hydroxy-functionalized material, wherein the improvement comprises a polysilicate, titania, or alumina interlayer between the substrate and the metal coating. The interlayer may have a porous microstructure, e.g., a polysilicate interlayer with an average pore size on the order of 50-150 Angstroms.Such articles, e.g., in the form of metal-coated fibers, may suitably be employed as reinforcing media in material composites having utility in structural applications, such as EMI shielding elements.Also disclosed is a corresponding method for forming a metal coating on a substrate by the provision of an interlayer of the above type. The interlayer may suitably be formed by applying to the substrate a sol gel dispersion of the polysilicate, titania, or alumina material, followed by drying of the applied dispersion.
    Type: Grant
    Filed: September 26, 1986
    Date of Patent: April 19, 1988
    Assignee: Advanced Technology Materials, Inc.
    Inventor: Ward C. Stevens
  • Patent number: 4738693
    Abstract: A valve block leak-tightly joinable to a receptacle to form a container suitable for liquid storage/vapor dispensing, and gas purification applications. The valve block is provided with first and second valve ports with which valves may be employed to flow feed gas through the valve block and receptacle. To effect purging the valve block ports and gas flow passages, the valve block is provided with a purge valve port which may be opened while the first and second valve ports are closed, to remove dead space hold-up gas from the respective ports and flow passages of the block prior to initiation of vapor dispensing or gas purification operation. The disclosed container is particularly advantageous for dispensing or purifying source reagent compounds for elements of Group III and Group V, in semiconductor manufacturing applications.
    Type: Grant
    Filed: November 4, 1987
    Date of Patent: April 19, 1988
    Assignee: Advanced Technology Materials, Inc.
    Inventor: Glenn M. Tom
  • Patent number: 4723967
    Abstract: A valve block leak-tightly joinable to a receptacle to form a container suitable for liquid storage/vapor dispensing, and gas purification applications. The valve block is provided with first and second valve ports with which valves may be employed to flow feed gas through the valve block and receptacle. To effect purging the valve block ports and gas flow passages, the valve block is provided with a purge valve port wich may be opened while the first and second valve ports are closed, to remove dead space hold-up gas from the respective ports and flow passages of the block prior to initiation of vapor dispensing or gas purification operation.The disclosed container is particularly advantageous for dispensing or purifying source reagent compounds for elements of Group III and Group V, in semiconductor manufacturing applications.
    Type: Grant
    Filed: April 27, 1987
    Date of Patent: February 9, 1988
    Assignee: Advanced Technology Materials, Inc.
    Inventor: Glenn M. Tom