Abstract: A fluid storage and dispensing system includes a storage and dispensing vessel containing a solid-phase physical sorbent material for holding a sorbable fluid, and a motive transport assembly associated with the storage and dispensing vessel. The storage and dispensing vessel is arranged for selectively flowing fluid into the vessel for storage, and out of the vessel for dispensing. The sorbable fluid physically adsorbed on the solid-phase physical sorbent medium may be selectively desorbed by pressure differential desorption and/or thermal desorption, to dispense gas when the vessel is in motive transport and/or when the vessel is at rest.

Abstract: A method of forming a carbide material on a substrate, comprising vaporizing a carbide source reagent to form a carbide source reagent vapor, and contacting the carbide source reagent vapor with the substrate to deposit the carbide material on the substrate, wherein the carbide source reagent comprises a compound of the formula: ##STR1## wherein: R.sub.1, R.sub.2, R.sub.3 and R.sub.4 may each vary independently of the others and are selected from the group consisting of hydrogen and C.sub.1 -C.sub.8 alkyl;M is selected from the group consisting of Si, Nb, Ge, Sn, Pb, V, W, Cr, Mo, Ta, Ti, Zr, Hf, Mn, Pt, Pd, Ir, Rh and Ru;A and B may vary independently of one another and are selected from the group consisting of C.sub.1 -C.sub.4 alkyl; andn is at least 2.The method of the invention may be used to form SiC or other carbide coatings on substrates to enhance tribological characteristics thereof, or to form thin film layers of SiC or other carbides for electronic device fabrication.

Abstract: An MOCVD precursor composition useful for MOCVD formation of a non-linear optically active metal borate thin film, comprising: (I) an organometallic source reagent for a metal reactively forming a non-linear optically active metal borate, and (II) an organoborate compound of the formula: B(OR).sub.3, wherein each R is independently selected from H, alkyl, aryl, alkaryl, arylalkyl, alkenyl, fluoroalkyl, fluoroaryl, fluoroaralkyl, fluoroalkaryl, trialkylsilyl, and C.sub.5 -C.sub.8 carbocylic groups, as the aforementioned borate source reagent. Such composition may be employed for forming a non-linear optically active metal borate thin film on a substrate, via depositing by CVD on said substrate a metal from the organometallic source reagent and a borate from the organoborate compound, to react the metal with the borate and yield the non-linear optically active metal borate on the substrate.

Abstract: An adsorption-desorption apparatus (102), and process for storage and dispensing of a gas, e.g., hydride and halide gases, and organometallic Group V compounds, which is selectively dispensed by pressure differential desorption of the sorbate gas from the sorbent material. The sorbent material is preferably a material which is devoid of concentration of trace components such as water, metals and oxidic transition metal species which would significantly decompose the sorbate gas in apparatus (102).

Abstract: Ba--Sr--Ti-oxide dielectric material, with at least 60 atomic percent of the total content of the oxide being Ti, can have relatively high dielectric constant K (>40 at 20.degree. C.) and relatively low second order voltage coefficient a.sub.2 of the dielectric constant (a.sub.2 <100 PPM V.sup.2 at 20.degree. C.). In preferred embodiments the dielectric material has nominal composition (BA.sub.x Sr.sub.y Ti.sub.1--x--y)-oxide, with 1--x--y in the range 0.65-0.90, with both x and y greater than or equal to 0.05. Ba, Sr and Ti together typically comprise at least 99 atomic percent of the total metal content of the dielectric material.

Abstract: A method of fabricating an integrated circuit capacitor in which a first conductive plate, a layer of ferroelectric material, and a second conductive plate are deposited and formed in sequence. Thereafter a diffusion barrier material and an insulative material are deposited either (1) as layers of the diffusion barrier material and the insulative material with tensile and compressive stresses in the respective layers offsetting one another, (2) as a layered dielectric stack with alternating layers of the diffusion barrier material and the insulative material, or (3) as a graded diffusion barrier material varying from a binary oxide of Ta, Nb, or Zr at the surface of the ferroelectric material to SiO.sub.2 at a distance above the surface of the ferroelectric material.

Abstract: A method of forming a thin film of BaSrTiO.sub.3 on a substrate in a chemical vapor deposition zone, with transport of a metal precursor composition for the metal-containing film to the chemical vapor deposition zone via a liquid delivery apparatus including a vaporizer. A liquid precursor material is supplied to the liquid delivery apparatus for vaporization thereof to yield the vapor-phase metal precursor composition. The vapor-phase metal precursor composition is flowed to the chemical vapor deposition zone for deposition of metal on the substrate to form the metal-containing film. The liquid precursor material includes a metalorganic polyamine complex, the use of which permits the achievement of sustained operation of the liquid delivery chemical vapor deposition process between maintenance events, due to the low decomposition levels achieved in the vaporization of the polyamine-complexed precursor.

Abstract: A system for the storage and on-demand dispensing of a fluid that is sorbable on a physical sorbent and that subsequent to sorption is desorbable from the sorbent by pressure-mediated desorption and/or thermally-mediated desorption. The system includes a storage and dispensing vessel containing the physical sorbent, and a desorbed gas retention structure, e.g., a storage vessel, or an extended length of gas flow conduit, for holding fluid that is desorbed from the physical sorbent and flowed to the retention structure for subsequent discharge. A pump is operatively coupled in gas flow communication with the storage and dispensing vessel, and selectively operable to effect desorption of fluid in the storage and dispensing vessel, and transfer of desorbed fluid to the retention structure for holding therein.

Abstract: A solvent composition useful for liquid delivery chemical vapor deposition of organometallic precursors such as .beta.-diketonate metal precursors. The solvent composition comprises a mixture of solvent species A, B and C in the proportion A:B:C wherein A is from about 3 to about 7 parts by volume, B is from about 2 to about 6 parts by volume, and C is from 0 to about 3 parts by volume, wherein A is a C.sub.6 -C.sub.8 alkane, B is a C.sub.8 -C.sub.12 alkane, and C is a glyme-based solvent (glyme, diglyme, tetraglyme, etc.) or a polyamine. The particular solvent composition including octane, decane and polyamine in an approximate 5:4:1 weight ratio is particularly usefully employed in the formation of SrBi.sub.2 Ta.sub.2 O.sub.9 films.

Abstract: An apparatus, for storage and dispensing of a sorbable fluid, including a storage and dispensing vessel containing a solid-phase physical sorbent medium for holding a sorbable fluid, with heat transfer means being associated with the vessel for thermally managing heat effects due to adsorption and desorption of the sorbable fluid.

Abstract: A method of forming a bismuth-containing material layer on a substrate, comprising bubbler delivery or liquid delivery vaporization of a bismuth amide source reagent to form a bismuth-containing source vapor, and deposition on the substrate of bismuth from the bismuth-containing source vapor, to form the bismuth-containing material layer on the substrate. The bismuth amide source reagent may include a bismuth amide compound of the formula BiL.sup.1.sub.x L.sup.2.sub.y (NR.sup.1 R.sub.2).sub.z wherein: z is an integer of from 1 to 3; x+y+z=3; each of L.sup.1 and L.sup.2 is independently selected from C.sub.1 -C.sub.4 alkyl, C.sub.1 14 C.sub.4 alkoxide, .beta.-diketonate, cyclic amido, cyclic tris-alkoxoamine, and C.sub.6 -C.sub.10 aryl; and each of R.sup.1 and R.sup.2 is independently selected from C.sub.1 -C.sub.8 alkyl, C.sub.1 -C.sub.8 alkoxy, C.sub.6 -C.sub.8 cycloalkyl, C.sub.6 -C.sub.10 aryl, C.sub.1 -C.sub.4 carboxyl, and --SiR.sup.3.sub.3 wherein each R.sup.3 is independently selected from H and C.sub.

Abstract: Fabrication of an electron-emitting device entails distributing electron-emissive carbon-containing particles (22) over a non-insulating region (12). The particles can be made electron emissive after the particle distributing step. Particle bonding material (24) is typically provided to bond the particles to the non-insulating region. The particle bonding material can include carbide formed by heating or/and can be created by modifying a layer (32) provided between the non-insulating region and the particles. In one embodiment, the particles emit electrons primarily from graphite or/and amorphous carbon regions. In another embodiment, the particles are made electron-emissive prior to the particle distributing step.

Abstract: A fluid storage and dispensing system including a fluid storage and dispensing vessel containing a physical adsorbent material having sorptive affinity for the fluid to be stored in the vessel and subsequently dispensed from the vessel through a valve head assembly. The character of the fluid stored in the vessel, such as its pressure and/or temperature, is non-invasively monitored during the storage (non-dispensing) mode of the system, by a sensing element in the valve head assembly operative coupled with an output device such as a visual output display or a set point-limited alarm.

Abstract: A liquid delivery system for delivery of an initially liquid reagent in vaporized form to a chemical vapor deposition reactor arranged in vapor-receiving relationship to the liquid delivery system.

Abstract: A system for the deposition of a multicomponent material layer on a substrate from respective liquid precursors for components of the multicomponent material layer, comprising: a vapor deposition zone; and multiple vaporizer units, each of which is joined (i) to at least one source of liquid precursor for supplying at least one liquid precursor thereto, and (ii) in vapor flow communication with the vapor deposition zone arranged to retain the substrate therein, for deposition on the substrate of vapor phase species from precursor vapor formed by vaporization of liquid precursors in the vaporizer units of the system.

Abstract: A green-blue to ultraviolet light emitting semiconductor laser having a top contact, a Bragg reflector, cladding layer, active layer, cladding layer, buffer, substrate, bottom contact and a passivation layer. The key aspect is a Ga*N material on a base structure comprising a SiC substrate selected from a group consisting of 2H-SiC, 4H-SiC and a-axis oriented 6H-SiC. Furthermore, the cladding layers have larger band gaps than the active layer and are complimentarily doped.

Abstract: Electron field emission devices (cold cathodes), vacuum microelectronic devices and field emission displays which incorporate cold cathodes and methods of making and using same. More specifically, cold cathode devices comprising electron emitting structures grown directly onto a substrate material. The invention also relates to patterned precursor substrates for use in fabricating field emission devices and methods of making same and also to catalytically growing other electronic structures, such as films, cones, cylinders, pyramids or the like, directly onto substrates.

Abstract: An apparatus for manufacturing a sorbent-containing fluid storage and dispensing vessel. A fluidizing vessel is arranged to hold a fluidized bed of solid-phase physical sorbent material, and sorbent material is fed to the fluidizing vessel. The sorbent material is fluidized with sorbable gas, to load the sorbent material with the gas and yield sorbate gas-loaded sorbent material. The sorbate gas-loaded sorbent material is transported from the fluidized bed into a storage and dispensing vessel, for subsequent use of the storage and dispensing vessel to selectively dispense the gas. Heat of adsorption effects are substantially eliminated in the fluidized bed, permitting the storage and dispensing vessel to be loaded at substantially ambient temperature.

Abstract: Anhydrous mononuclear tris(.beta.-diketonato)bismuth complexes, useful as precursors for chemical vapor deposition of bismuth, for producing Bi-containing films of significantly improved stoichiometry, morphology and functional character, as compared to films obtained from dinuclear tris(.beta.-diketonato)bismuth complexes of the prior art.

Abstract: A gas storage and dispensing system in which a gas is sorptively retained on a bed of physical adsorbent material in a containment vessel, and gas is desorbed for selective dispensing thereof from the vessel. The vessel is equipped for gas discharge, with a valve head, mass flow controller, regulator assembly, or the like. A gas-flow resistance-reducing structure such as a gas-permeable porous tube, inert packing, or dispersed inert material, is provided within the vessel, to reduce the resistance to flow of desorbed gas from the bed of adsorbent material during the dispensing operation.