Abstract: One example provides a decentrally structured apparatus including sound transducers and operating according to wave field synthesis principles. The decentrally structured apparatus includes a plurality of assembly units, each including several sound transducers, wherein the decentrally structured apparatus is configured to use a model-based approach to carry out a synthesis of wave fronts within each assembly unit for sound transducers of the respective assembly unit using audio signals and associated data for their form, and to actuate the sound transducers of the respective assembly unit with actuation signals corresponding to the synthesis.

Abstract: The present application provides a self-healing material which comprises silica sol as self-healing agent encapsulated by a polymeric shell. The self-healing material may be further embedded in a concrete mixture to heal micro-cracks in concrete. A method for preparing the self-healing material is also provided.

Abstract: Disclosed herein are a high-temperature structure for measuring properties of a curved thermoelectric device, which is capable of precisely measuring the properties of a medium-temperature curved thermoelectric device that is applied to a tube-type waste heat source and is used in research, and a system and a method for measuring the properties using the same. The high-temperature structure may include a plurality of rod-shaped cartridge heaters, and a heating element having a surface that is a curved surface coming into contact with a lower end of the curved thermoelectric device, having a plurality of holes for accommodating the plurality of cartridge heaters, and directly heating the lower end of the curved thermoelectric device.

Abstract: Disclosed is a printed-circuit board (PCB) structure having an electromagnetic-tunnel-embedded architecture, the PCB structure including a PCB, and an EM-tunnel-embedded in the PCB, wherein the EM-tunnel includes a dielectric core and a metal clad which surrounds the dielectric core and has at least one port exposed to a surface of the PCB.

Abstract: A preparation method of a lithium nickel manganese oxide cathode material of a battery includes steps of providing a nickel compound, a manganese compound, a first quantity of lithium compound, a second quantity of lithium compound and a compound containing metallic ions, mixing the nickel compound, the first quantity of lithium compound, dispersant and deionized water to produce first product solution, adding the manganese compound into the first product solution and mixing to produce second product solution, performing a first grinding to produce first precursor solution, mixing the second quantity of lithium compound, the compound containing the metallic ions and the first precursor solution, then performing a second grinding to produce second precursor solution, and calcining the second precursor solution to produce the lithium nickel manganese oxide cathode material of the battery, the formula of which is written by Li1.0+xNi0.5Mn1.5MyO4. Therefore, the activation energy of reaction can be reduced.

Abstract: Described is a method and apparatus to accelerate rendering of 3D graphics images. When rendering, the transformation matrix (or equivalent) used for projecting primitives is modified so that a resulting image is smaller and/or warped compared to a regular unmodified rendering. The effect of such transformation is fewer pixels being rendered and thus a better performance. To compute the final image, the warped image is rectified by an inverse transformation. Depending on the warping transformation used, the resulting (rectified) image will be blurred in a controlled way, either simulating a directional motion blur, location-dependent sharpness/blurriness or other blurring effects. By intelligently selecting the warping transformation in correspondence with the rendered scene, overall performance is increased without losing the perceived fidelity of the final image.

Abstract: In one or more embodiments, a semiconductor package includes a redistribution layer, a conductive pad, a dielectric layer, a silicon layer, and a conductive contact. The redistribution layer includes a first surface and a second surface opposite to the first surface. The conductive pad is on the first surface of the redistribution layer. The dielectric layer is disposed on the first surface of the redistribution layer to cover a first portion of the conductive pad and to expose a second portion of the conductive pad. The silicon layer is disposed on the dielectric layer, the silicon layer having a recess to expose the second portion of the conductive pad. The conductive contact is disposed over the silicon layer and extends into the recess of the silicon layer.

Abstract: Methods are provided for creating objects in a way that permits an API client to explicitly participate in memory management for an object created using the API. Methods for managing data object memory include requesting memory requirements for an object using an API and expressly allocating a memory location for the object based on the memory requirements. Methods are also provided for cloning objects such that a state of the object remains unchanged from the original object to the cloned object or can be explicitly specified.

Abstract: A power distribution system including a high-voltage direct current unit (HVDCU) configured to receive an amount of high-frequency alternating current (AC) input power from a power source and convert the input power into DC power, a negative voltage distribution rail and a positive voltage distribution rail that are together configured to supply the high-voltage DC power to at least one control unit (CU) electrically disposed between the negative voltage distribution rail and the positive voltage distribution rail and the CU being configured to convert the DC power into output power compatible with at least one load and supply the output power to the loads associated with it.

Abstract: Microemitter arrays comprising a plurality of microemitters having current transfer features such as microtips or blades to form contactless current transfer structures, and homopolar machines comprising same, are described and claimed. The invention further defines homopolar motors or generators comprising electrical connections formed of electrodes that transfer current without mechanical contact. Micron-size electron field emitters offer contact-free current transfer with high longevity, high reliability and are insensitive to temperature and if needed ionizing radiation. The microemitters may comprise diamond material and may be placed in a vacuum or noble gas environment. The gap between microemitters and electrodes for efficient, reliable current transfer could be in the range of 0.5 to 2 mm. The current transfer can be accomplished without mechanical contact, enabling higher RPM motors than previously achievable with brush or liquid metal electrical connections.

Abstract: Provided is an electrode material for an energy storage device, which comprises a metal organic framework, wherein an element having an unshared electron pair is doped to the organic linker of the metal organic framework. The electrode material for an energy storage device comprises a metal organic framework in which an element having an unshared electron pair is doped to the organic linker. The non-shared electron pair of the element doped to the electrode material is bound to high-order polysulfide to prevent the polysulfide from being transferred to lithium metal, thereby providing a good effect upon cycle characteristics and thus improving the cycle characteristics of an energy storage device, such as a lithium-sulfur battery. As a result, the metal organic framework having nitrogen doped thereto improves the cycle characteristics of an energy storage device, such as a lithium-sulfur battery, as a cathode thereof.

Abstract: An ammonia precursor generating system includes: a storage compartment storing at least ammonia precursor granules; a tank storing an ammonia precursor solution; a dissolving compartment configured to store an ammonia precursor solution, and to dissolve ammonia precursor granules in the ammonia precursor solution; a transfer mechanism configured to transfer ammonia precursor granules from the storage compartment to the dissolving compartment; a fluid transfer device configured to transfer the ammonia precursor solution from the tank to the dissolving compartment.

Abstract: In a normal, non-loop mode a uOp buffer receives and stores for dispatch the uOps generated by a decode stage based on a received instruction sequence. In response to detecting a loop in the instruction sequence, the uOp buffer is placed into a loop mode whereby, after the uOps associated with the loop have been stored at the uOp buffer, storage of further uOps at the buffer is suspended. To execute the loop, the uOp buffer repeatedly dispatches the uOps associated with the loop's instructions until the end condition of the loop is met and the uOp buffer exits the loop mode.

Abstract: This disclosure describes systems, methods, and apparatus for pulsed RF power delivery to a plasma load for plasma processing of a substrate. In order to maximize power delivery, a calibration phase using a dummy substrate or no substrate in the chamber, is used to ascertain a preferred fixed initial RF frequency for each pulse. This fixed initial RF frequency is then used at the start of each pulse during a processing phase, where a real substrate is used and processed in the chamber.

Abstract: A semiconductor die includes a semiconductor body, an insulating layer, a conductive circuit layer and at least one conductive bump. The semiconductor body has a first surface, a second surface and a side surface extending between the first surface and the second surface. The insulating layer is disposed on the first surface and the side surface of the semiconductor body. The insulating layer includes a first insulating layer over the semiconductor body and a second insulating layer over the first insulating later. The insulating layer includes a step structure. The conductive circuit layer is electrically connected to the first surface of the semiconductor body, the conductive circuit layer includes at least one pad, and the conductive bump is electrically connected to the pad.

Abstract: Embodiments are described for methods and systems for mapping virtual memory pages to physical memory pages by analyzing a sequence of memory-bound accesses to the virtual memory pages, determining a degree of contiguity between the accessed virtual memory pages, and mapping sets of the accessed virtual memory pages to respective single physical memory pages. Embodiments are also described for a method for increasing locality of memory accesses to DRAM in virtual memory systems by analyzing a pattern of virtual memory accesses to identify contiguity of accessed virtual memory pages, predicting contiguity of the accessed virtual memory pages based on the pattern, and mapping the identified and predicted contiguous virtual memory pages to respective single physical memory pages.

Abstract: A microfluidic device having a substrate with an electrically conductive element made using a conductive ink layer underlying a hydrophobic layer.

Abstract: A semiconductor device includes a first die including a first pad and a first passivation layer, a second die including a second pad and a second passivation layer, and an encapsulant surrounding the first die and the second die. Surfaces of the first die are not coplanar with corresponding surfaces of the second die. A dielectric layer covers at least portions of the first passivation layer and the second passivation layer, and further covers the encapsulant between the first die and the second die. The encapsulant has a first surface. The dielectric layer has a second surface adjacent to the first passivation layer, the second passivation layer and the encapsulant, and further has a third surface opposite the second surface. The semiconductor device further includes a redistribution layer electrically connected to the first pad and the second pad and disposed above the third surface of the dielectric layer.

Abstract: A method and system is provided for allowing signals across electrical domains. The method includes applying a clock signal (of at least 1 GHz) to an electronic element in a location having first electrical properties. Data is output from the first electronic element; and received at a second electronic element located in a location having second electrical properties. The first and second electrical properties are different by either voltage and clock frequency.

Abstract: A high voltage, high current vacuum integrated circuit includes a common vacuum enclosure that includes at least two cold-cathode field emission electron tubes, and contains at least one internal vacuum pumping means, at least one exhaust tubulation, vacuum-sealed electrically-insulated feedthroughs, and internal electrical insulation. The cold-cathode field emission electron tubes are configured to operate at high voltage and high current and interconnected with each other to implement a circuit function.