Abstract: A III-V semiconductor layer is deposited using an apparatus comprising a process chamber, a susceptor for receiving one or more substrates to be coated, and a gas inlet element which comprises a plurality of process gas inlet zones. An etching gas inlet in the flow direction of the hydride and the MO compound opens into the process chamber downstream of the process gas inlet zones. A control device is adapted and the process gas inlet zones and the etching gas inlet are arranged such that the process gases cannot enter into the etching gas inlet during deposition of the semiconductor layer and the etching gas cannot enter into the process gas inlet zones during purification of the process chamber. The etching gas inlet is formed by an annular zone of the process chamber cover around the gas inlet element and by an annular fastening element for fastening a cover plate.

Abstract: A device for determining the partial pressure or the concentration of a steam in a volume, includes a sensor body that can be oscillated. The temperature of the sensor body can be controlled to a temperature below the condensation temperature of the steam, and the oscillation frequency of the sensor body is influenced by a mass accumulation of the condensed steam on a surface of the sensor body. Means are provided for generating a gas flow from the sensor surface in the direction of the volume through a steam transport channel that adjoins a window to the volume. In order to increase the maximum service life of the sensor body, the means for generating a gas flow has a slit nozzle designed as an annular channel.

Abstract: A device for determining the partial pressure or concentration of a vapor in a volume includes a sensor element that can be caused to oscillate and temperature-controlled to a temperature below the condensation temperature of the vapor. The sensor element has an oscillation frequency that is influenced by a mass accumulation formed by condensed vapor on the sensor surface thereof. The rear side of the sensor element pointing away from the sensor surface contacts a thermal transfer surface of a thermal transfer element. The thermal transfer element is formed from an electrically heatable heating element that is connected to a cooling element in a thermally conductive manner by a thermal dissipation surface, which is different from the thermal transfer surface. The thermal transfer surface extends substantially parallel to the thermal dissipation surface.

Abstract: A susceptor for a CVD-reactor includes insertion openings arranged in a bearing surface of the susceptor. An insertion section of a positioning element is inserted into one of the insertion openings. The insertion section forms positioning flanks with a section projecting from the insertion opening for fixing the position of a substrate. The insertion openings each have side walls and a base. The insertion section comprises bearing areas adjacent to the side walls of the insertion openings and a lower side of the positioning element facing the base of the insertion opening. The base of the insertion opening is separated from the lower side of the positioning element by a first distance. An edge protruding section of the positioning element is separated from a section of the bearing surface of the susceptor by a second distance.

Abstract: In a method for producing a structured seed layer for carbon nanotubes to be deposited thereon, energy is applied by means of a laser beam to a metal layer previously applied to a substrate such that the metal layer is broken up into individual islands. The laser beam is expanded into a beam having a linear cross-section, and a linear exposure zone of the metal layer is simultaneously exposed to the expanded beam. The exposure zone is moved across the metal layer in a direction transverse to the length of the exposure zone. An apparatus for carrying out the method comprises a device for transporting a substrate with a metal layer applied thereto, a laser to produce a laser beam, and a device for expanding the laser beam to produce a linear exposure zone that extends perpendicularly to the direction in which the substrate is transported.

Abstract: A CVD reactor includes a flat component with two broad sides extending parallel to each other and spaced apart from each other by a thickness. An outer edge of each broad side transitions without kinks into an edge of an outer peripheral side of the flat component. The thickness of the flat component is substantially less than a diameter of the flat component. The flat component includes a core body composed of graphite. The core body is coated with a SiC or TaC coating, which exhibits a compressive stress at room temperature. In order to reduce the stress between the coating and the core body, the rounding arc length of the outer edge is greater than 90° and the rounding radius of the outer edge is at most 1 mm and/or is greater than the coating thickness. Additionally, rounding segments of the peripheral side transition into each other without kinks.

Abstract: A CVD reactor includes a gas inlet element for introducing a process gas into a process chamber arranged between a process chamber cover and a susceptor. The gas inlet element contains at least one metal surface that comes into contact with the process gas. The metal surface has a passivation layer which prevents the metal surface from flaking due to exposure to one or more reactive gases. Cooling channels are arranged such that the passivation layer is maximally heated to 100° C. in a cleaning step in which chlorine is introduced into the process chamber and the susceptor is heated to at least 700° C. At the same time, the passivation layer is formed by chemically reacting a metal-organic compound with the metal atoms of the metal surface. The cleaning gas inlet openings are arranged such that the cleaning gas comes into contact with the metal surface that has the passivation layer.

Abstract: A CVD or PVD coating device comprises a housing and a gas inlet organ secured to the housing via a retaining device, the gas inlet organ having a gas outlet surface with gas outlet openings. The retaining device is only secured at its horizontal edge to the housing so as to stabilize the retaining device with respect to deformations and temperature. The gas inlet organ is secured, at a plurality of suspension points, to the retaining device by means of a plurality of hanging elements distributed over the entire horizontal surface of the retaining device. The retaining device has mechanical stabilization elements formed by a retaining frame having vertical walls that are interconnected at vertical connection lines. An actively cooled heat shield is situated between the retaining device and the gas inlet organ.

Abstract: A device for depositing a layer onto one or more substrates includes a process chamber; a gas inlet element, which can be temperature-controlled, for delivering a process gas into the process chamber in a flow direction towards the substrates; a shielding element, arranged directly after the gas inlet element in the flow direction and which, when in a shielding position, thermally insulates the gas inlet element and the substrates from each other; mask holders arranged after the shielding element in the flow direction, each for holding a mask; and substrate holders for holding at least one of the substrates, each substrate holder corresponding to one of the plurality of mask holders. For each of the substrate holders, a displacement element is provided for displacing the substrate holder from a position distant from the mask holder to a position adjacent to the mask holder.

Abstract: A method is employed to separate a carbon structure, which is disposed on a seed structure, from the seed structure. In the method, a carbon structure is deposited on the seed structure in a process chamber of a CVD reactor. The substrate comprising the seed structure (2) and the carbon structure (1) is heated to a process temperature. At least one etching gas is injected into the process chamber, the etching gas having the chemical formula AOmXn, AOmXnYp or AmXn, wherein A is selected from a group of elements that includes S, C and N, wherein O is oxygen, wherein X and Y are different halogens, and wherein m, n and p are natural numbers greater than zero. Through a chemical reaction with the etching gas, the seed structure is converted into a gaseous reaction product. A carrier gas flow is used to remove the gaseous reaction product from the process chamber.

Abstract: During a pre-treat process, hydrogen plasma is used to remove contaminants (e.g., oxygen, carbon) from a surface of a wafer. The hydrogen plasma may be injected into the plasma chamber via an elongated injector nozzle. Using such elongated injector nozzle, a flow of hydrogen plasma with a significant radial velocity flows over the wafer surface, and transports volatile compounds and other contaminant away from the wafer surface to an exhaust manifold. A protective liner made from crystalline silicon or polysilicon may be disposed on an inner surface of the plasma chamber to prevent contaminants from being released from the surface of the plasma chamber. To further decrease the sources of contaminants, an exhaust restrictor made from silicon may be employed to prevent hydrogen plasma from flowing into the exhaust manifold and prevent volatile compounds and other contaminants from flowing from the exhaust manifold back into the plasma chamber.

Abstract: A method and apparatus are provided for plasma-based processing of a substrate based on a plasma source having a first, second and third electrodes disposed above a pedestal. The second electrode is disposed between the first and third electrodes. A first gap is formed between the first electrode and the pedestal and between the third electrode and the pedestal. A second gap is formed between the first and second electrodes, and a third gap is formed between the second and third electrodes. A first radio frequency (RF) power supply is connected to the first and third electrodes and is configured to predominantly deliver power to plasmas located in the first gap. A second RF power supply is connected to the second electrode and is configured to predominantly deliver power to plasmas located in the second and third gaps.

Abstract: In a CVD reactor, flushing gases of different heat conductivities are used to flush a gap between a substrate holder and a heating system. The lower side of the substrate holder is configured differently in a central region with respect to the heat transmission from the heating system to the substrate holder, than in a circumferential region that surrounds the central region. The gap has such a gap height that, upon a change of a first flushing gas with a first heat conductivity to a second flushing gas with a second heat conductivity, the heat supplied from the heating system to the substrate holder changes differently in the circumferential region than in the central region.

Abstract: In a device and a method for generating vapor in a CVD or PVD device, particles are vaporized by bringing the particles into contact with a first heat transfer surface of a vaporization device. The vapor generated by vaporizing the particles is transported by a carrier gas out of the vaporization device and into a single or multistage modulation device. In a vapor transfer phase, second heat transfer surfaces of the modulation device are adjusted to a first modulation temperature, at which the vapor passes through the modulation device without condensing on the second heat transfer surfaces. At an intermission phase, the second heat transfer surfaces are adjusted to a second modulation temperature, at which at least some of the vapor condenses on the second heat transfer surfaces.

Abstract: A device and a method for depositing organic layers onto a substrate includes a process gas source with a temperature-controlled evaporator, and a carrier gas supply line which opens into the evaporator in order to supply a carrier gas flow into a temperature-controlled first transport line. A first dilution gas supply line, which opens into the first transport line, supplies a dilution gas flow into the first transport line. The device also comprises a temperature-controlled gas inlet element fluidly connected to the first transport line. A gaseous starting material can be supplied into a processing chamber via the gas inlet element. A substrate is disposed on a temperature-controlled susceptor located in the processing chamber, and a layer is grown on the substrate using the gaseous starting material.

Abstract: A heating apparatus includes a plurality of zone heating apparatuses and a control apparatus. The reference variable of the control apparatus is a susceptor temperature. The controlled variable of the control apparatus is an actual temperature of the susceptor measured by a temperature sensor and the manipulated variable of the control apparatus is the total heating power fed into the heating apparatus. A heating power distributor receives the total heating power as an input variable and provides a zone heating power for each of the zone heating apparatuses as output variables. The sum of the zone heating powers corresponds to the total heating power and the zone heating powers have a specified ratio with respect to each other. In order to specify a robust control loop, the specified ratios are defined by distribution parameters, wherein at least one distribution parameter is a quotient of two zone heating powers.

Abstract: A first and second process gas is fed into a device during a first and second process step, respectively. The device has an exhaust gas line through which a first and second exhaust gas is conveyed out of the device in the first and second process step, respectively. A first and second exhaust gas device is connected by means of a valve arrangement optionally to the exhaust gas line in a fluidly communicable and separable manner, with a first and second treatment member for treating an exhaust gas produced in the first and second process step, respectively. A gas feed device is arranged between the valve arrangement and the respective treatment members. A control device is provided whose control variable is the pressure difference between the total pressure in the respective exhaust gas devices and is configured to minimize the pressure difference during switching of the valve arrangement.

Abstract: A device for carrying out a CVD process comprises a gas inlet element, which is arranged in a reactor housing and has a gas outlet plate, which faces a process chamber, comprises a porous material and has a multiplicity of gas outlet openings, which are fed with process gases from a gas distributing volume arranged in the gas inlet element. In order to improve production aspects of a gas inlet element, in particular for a CVD reactor with a large coating area, it is proposed that the porous material forms the core of the gas outlet plate, the surface segments of which that come into contact with the process gas are sealed.

Abstract: A delivery device, manufacturing system, and process of manufacturing are disclosed. The delivery device includes a feed tube and a chemical vapor deposition coating applied over an inner surface of the feed tube, the chemical vapor deposition coating being formed from decomposition of dimethylsilane. The manufacturing system includes the delivery device and a chamber in selective fluid communication with the delivery device. The process of manufacturing uses the manufacturing system to produce an article.

Abstract: Described herein is an exhaust manifold (1) comprising suction opening (2), a gas extraction chamber (3), an intermediate space (9), a gas collection chamber (5) and a suction line (4). A flow-impeding structure may be present within the intermediate space (9). The flow impeding structure may exert a flow resistance on the gas flow which is greater in a central zone (Z) than in edge zones (R) of the intermediate space (9), causing gas to flow into the suction opening (2) at a substantially uniform gas flow speed across the cross section of the suction opening (2).