Abstract: A transport module for loading and unloading a process module of a semiconductor production device includes a housing, which has a chamber that can be evacuated. The chamber has an opening that can be closed in a gas-tight manner by a closure device, which opens out into a first coupling duct associated with the transport module. The first coupling duct is connected with a flange plate using an elastic intermediate element, wherein the flange plate can be seated in a plane parallel, sealing manner on a flange plate of a second coupling duct associated with the process module. After opening the closure device, an evacuated loading and unloading duct to the process module is created. An inner and outer mounting section of the intermediate element is spaced apart from one another in the radial direction, with respect to the axis of the first coupling duct, by a deformation zone.

Abstract: A method is disclosed for forming multi-layered structures on polymeric or other materials that provide optical functions or protect underlying layers from exposure to oxygen and water vapor. Novel devices are also disclosed that may include both multi-layered protective structures and AMOLED display, OLED lighting or photovoltaic devices. The protective multi-layer structure itself may be made by depositing successively on a substrate at least three very thin layers of material with different density or composition. In some methods for deposition of such film, the layers are deposited by varying the energy of ion bombardment per unit thickness of the film. Any layer of the structure may include one or more of the materials: silicon nitride, silicon oxide, silicon oxynitride, or metallic nitride or oxide. Specific commercial applications that benefit from this include manufacturing of photovoltaic devices or organic light emitting diode devices (OLED) including lighting and displays.

Abstract: A device for manufacturing nanostructures consisting of carbon, such as monolayers, multilayer sheet structures, tubes, or fibers includes a gas inlet element having a housing cavity enclosed by housing walls, into which a gas feed line opens, through which a gaseous, in particular carbonaceous starting material can be fed into the housing cavity, having a plasma generator, which has components arranged at least partially in the housing cavity, which has at least one plasma electrode to which electrical voltage can be applied, to apply energy to the gaseous starting material by igniting a plasma and thus converting the gaseous starting material into a gaseous intermediate product, and having a gas outlet surface having a plurality of gas outlet openings, through which the gaseous intermediate product can exit out of the housing cavity. A gas heating unit is provided for assisting the conversion, which is arranged downstream of the components.

Abstract: A method is employed to separate a carbon structure, which is disposed on a seed structure, from the seed structure. In the method, a carbon structure is deposited on the seed structure in a process chamber of a CND reactor. The substrate comprising the seed structure (2) and the carbon structure (1) is heated to a process temperature. At least one etching gas is injected into the process chamber, the etching gas having the chemical formula AOmXn, AOmXnYp or AmXn, wherein A is selected from a group of elements that includes S, C and N, wherein O is oxygen, wherein X and Y are different halogens, and wherein m, n and p are natural numbers greater than zero. Through a chemical reaction with the etching gas, the seed structure is converted into a gaseous reaction product. A carrier gas flow is used to remove the gaseous reaction product from the process chamber.

Abstract: Provided is a method of epitaxial deposition, which involves dry-etching a semiconductor substrate with a fluorine containing species and exposing the dry-etched substrate to hydrogen atoms, prior to epitaxially depositing a semiconductor layer to the surface of the substrate.

Abstract: Described herein are techniques for supplying radio frequency (RF) power to a large area plasma source so as to produce a plasma that is substantially uniform in two spatial dimensions. The RF power may be supplied by a power supply system, which may comprise a RF source and a distribution network. The distribution network may comprise a matching network, and a branching circuit that divides the RF power into several branches. Each of the branches of the distribution network may include a phase shifter that shifts the RF signal (which carries the RF power) by an odd multiple of 90°, and a blocking filter which blocks any harmonics and other unwanted frequencies which are reflected from a plasma source. The output of the branches may be coupled to feed points that are spatially distributed over the one or more electrodes of the plasma source.

Abstract: In a method for depositing layers on one or more substrates arranged in a process chamber, at least one carbon-containing gaseous source material is used in at least one deposition step. During layer growth on the one or more substrates, parasitic coatings are also deposited on the wall surfaces of the process chamber. After removing the one or more substrates from the process chamber, a gas flow containing one or more cleaning gases is introduced into the process chamber and the process chamber is heated to a cleaning temperature. The parasitic coatings are transformed into volatile substances, which are removed from the process chamber with the gas flow. To remove a carbon-containing residue on the wall surfaces, an ammonia cleaning step is performed in which the carbon-containing residue reacts with ammonia to form a volatile compound which is removed from the process chamber with the gas flow.

Abstract: A CVD reactor includes a flat component with two broad sides extending parallel to each other and spaced apart from each other by a thickness. An outer edge of each broad side transitions without kinks into an edge of an outer peripheral side of the flat component. The thickness of the flat component is substantially less than a diameter of the flat component. The flat component includes a core body composed of graphite. The core body is coated with a SiC or TaC coating, which exhibits a compressive stress at room temperature. In order to reduce the stress between the coating and the core body, the rounding arc length of the outer edge is greater than 90° and the rounding radius of the outer edge is at most 1 mm and/or is greater than the coating thickness. Additionally, rounding segments of the peripheral side transition into each other without kinks.

Abstract: A transfer module for a multi-module apparatus may include a) a plurality of facets, wherein a facet of said plurality comprises a port configured to hold a module; and b) at least one robot arm configured to move an object to and from the module through said port via a combination of extension and rotational movements.

Abstract: A device is provided for depositing carbonaceous structures, for example layers in the form of nanotubes or graphene on a substrate, which is supported by a substrate support disposed in a process chamber housing. A process gas can be delivered onto the substrate through gas outlet openings of a gas inlet element disposed in the process chamber housing. The process chamber housing has two opposing walls which each have holding recesses. At least one plate-shaped component is disposed in the process chamber housing. The plate-shaped component has two edge portions directed away from one another that each are inserted respectively in the holding recess of one of the two opposing walls.

Abstract: A gas inlet member of a CVD reactor includes a gas inlet housing having a gas distribution volume supplied with a process gas by a feed line and a multiplicity of gas lines, each formed as a tube and engaging openings of a gas outlet plate arranged in front of an inlet housing wall, and through which the process gas enters a process chamber. A coolant chamber adjoins the gas inlet housing wall and a coolant cools the gas inlet housing wall and outlet ends of the gas lines that are in heat-conductive contact with the gas inlet housing wall. The gas outlet plate is thereby thermally decoupled from the gas inlet housing wall such that the gas outlet plate, which is acted on by radiation heat coming from the process chamber, heats up more intensely than the outlet ends which extend into the openings of the gas outlet plate.

Abstract: A composite dielectric structure having one or more Leakage Blocking Layers (LBL) interleaved with one or more Laminate Dielectric Layers (LDL), Alloy Dielectric Layers (ADL), or Co-deposit Dielectric Layers (CDL). Each LDL, ADL, and CDL includes dopants incorporated in a respective base dielectric layer (BDL); where LDLs are formed by incorporating a doping layer into a BDL using a laminate method, ADLs are formed by incorporating a dopant into a BDL using an alloying method; and CDLs are formed by pulsing a BDL base material and a dopant together using a co-deposit method.

Abstract: The invention relates to a CVD reactor having a process chamber (23) and a substrate holder support (1) arranged therein, said support comprising at least one bearing surface (4), wherein a plurality of gas inlet lines (7, 8) open out into the bearing surface (4?). The CVD reactor further has a substrate holder (2), the back side thereof facing the bearing surface (4?), wherein the gases fed through the gas inlet lines (7,8) into the space between the bearing surface (4?) and back side form a gas cushion (19) supporting the substrate holder (2). According to the invention, the gas cushion comprises a plurality of zones (A, C) that each can be fed through an associated gas inlet line (7, 8) and that are separated from each other by a means (15) preventing gas exchange between the zones (A, C). At least one inner zone (C) is associated with a gas discharge line (13, 14), via which the gas fed into the inner zone (C) by way of the inlet line (7, 8) can be discharged.

Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.

Abstract: The invention relates to a device and to a method for treating substrates, comprising a heating apparatus having a plurality of zone heating apparatuses and comprising a control apparatus, the reference variable of which is a susceptor temperature (TS) and the controlled variable of which is an actual temperature of the susceptor (7) measured by means of a temperature-measuring apparatus (10) and the manipulated variable of which is a value for the heating power (Ptot) fed into the heating apparatus. A heating power distributor (12) is provided, which receives the manipulated variable (Ptot) as an input variable and which provides a zone heating power (P1, P2, P3, P4, P5) for each of the zone heating apparatuses (1, 2, 3, 4, 5) as output variables, wherein the sum of the values of the zone heating powers (P1, P2, P3, P4, P5) corresponds to the manipulated variable (Ptot) and the values of the zone heating powers (P1, P2, P3, P4, P5) have a specified fixed ratio among each other.

Abstract: The invention concerns a transport module (2) for purposes of loading and unloading a process module (1) of a semiconductor production device, with a housing (3), which has a chamber (4) that can be evacuated, which has an opening (6) that can be closed in a gas-tight manner by a closure device (5), which opens out into a coupling duct (7) associated with the transport module (2), which coupling duct is connected with a flange plate (9) using an elastic intermediate element (8), wherein the flange plate (9) can be seated in a plane parallel, sealing manner on a flange plate (11) of a coupling duct (10) associated with the process module (1), such that after opening the closure device (5) an evacuated loading and unloading duct to the process module (1) is created, wherein a mounting section of the intermediate element (8) is connected with the wall (12, 12?) of the coupling duct (7).

Abstract: The invention relates to a device for coating substrates in a process chamber (8) of a reactor housing (1), having a gas inlet member (11) for introducing process gases into the process chamber (8), having a gas outlet member (10) for discharging an exhaust gas stream from the process chamber (8) into a particle filter (4), which is disposed in a particle separator housing (3) and has a porous filter medium (16) for out-filtering particles from the exhaust gas stream, which form during a reaction of the process gases.

Abstract: There is disclosed a method for forming a TiSiN thin film on a substrate according to ALD including a first process of preheating a substrate while supplying Ar or N2 containing inert gas to a chamber, after disposing a substrate in a chamber; a second process of forming a TiN film on the substrate by repeating at least one time a process of purging over-supplied Ti containing gas after supplying Ti containing gas and inert gas after that and a process of purging residual product after supplying N containing gas and inert gas after that; a third process of forming a SiN film by repeating at least one time a process of purging over-supplied Si containing gas after supplying Si containing gas on the TiN film and supplying inert gas after that and a process of purging residual product after supplying N containing gas and supplying inert gas after that; and a fourth process of forming a TiSiN film having a desired thickness by repeating the second and third processes at least one time, a partial pressure range of

Abstract: The invention relates to a device for depositing laterally structured layers on a substrate (2) situated on a substrate support (1), using a shadow mask (3) lying flat on the substrate surface (2?) to be coated, the substrate support (1) having first magnetic zones (4) for magnetically attracting second magnetic zones (5) of the shadow mask (3) that are associated with these first magnetic zones (4), wherein, before coating the substrate (2) and when the shadow mask (3) is lying on the substrate (2), the first magnetic zones (4) may be brought into an active position in which the second magnetic zones (5) are drawn toward the substrate surface (2?), and, for placement or removal of the shadow mask (3), the first magnetic zones may be brought into an inactive position in which the attractive force acting on the second magnetic zones (5) is reduced.

Abstract: The invention relates to a device and a method for depositing semiconductor layers, in particular made of a plurality of components on one or more substrates (21) contacting a susceptor (2), wherein process gases can be introduced into the process chamber (1) through flow channels (15, 16; 18) of a gas inlet organ (8), together with a carrier gas, said carrier gas permeating the process chamber (1) substantially parallel to the susceptor and exits through a gas outlet organ (7), wherein the products of decomposition build up the process gases as a coating at least in regions on the substrate surface and on the surface of the gas outlet organ (7) disposed downstream of the susceptor (2) at a distance (D) from the downstream edge (21) thereof.