Abstract: A system for the treatment of a region of an object adjacent to a substrate. The system includes a source of an incident laser beam delivering a focused laser beam. The wavelength of the incident laser beam is greater than the sum of 500 nm and of the wavelength associated with the bandgap of the material forming the substrate and smaller than the sum of 2,500 nm and of this wavelength. The system includes an optical device associating a digital aperture greater than 0.3 and means for correcting the spherical aberrations appearing during the crossing of the substrate for a given thickness of the substrate and a given distance between the substrate and the optical device. The processing being performed on the region through the substrate, and including the physical, chemical, or physico-chemical modification or the ablation of said region.

Abstract: An optoelectronic device includes, in a stack, an emitting layer having optically active structures, configured to emit or receive radiation, a sensitive layer having at least one structure having a temperature resistance below a temperature Tmax below 200° C., a bond layer, and a transparent support layer. The bond layer is based on an inorganic low temperature bonding material. The bond layer also has cavities directly in line with the optically active structures, between the transparent support layer and the sensitive layer.

Abstract: A method of manufacturing an optoelectronic device including assemblies of light-emitting diodes (LED) having first and second assemblies and first blocks made of a first photoluminescent material, each covering one of the first assemblies. The method includes the forming of a layer covering the first and second assemblies, the delimiting of first openings in the layer to expose the first assemblies, the filling of the first openings with the first material, and the performing of a chemical-mechanical polishing to delimit the first blocks.

Abstract: A display pixel including a light-emitting diode, a circuit for driving the light-emitting diode, and first, second, third, and fourth conductive pads. The light-emitting diode is powered with a first voltage received between the first and second pads. The driver circuit controls the light-emitting diode based on first and second binary signals. The first signal is received between the third and second pads and alternates between a second voltage lower than the first voltage, and a third voltage, lower than the second voltage. The second signal is received between the fourth and second pads and alternates between the second voltage and the third voltage. The display pixel comprises a circuit for delivering a power supply voltage of the driver circuit, based on the first and second signals.

Abstract: A display pixel comprising at least one light-emitting diode, an electronic circuit for driving the light-emitting diode, and first and second conductive pads, the first pad being coupled to the light-emitting diode, the driving circuit being configured in normal operation to drive the light-emitting diode on the basis of first signals received on the second pad, the driving circuit comprising first and second modules, the first module being coupled to the first and second pads, and being configured to activate or deactivate the second module on the basis of the supply voltage received on the first pad and first signals received on the second pad, the second module being configured, when activated, to deliver second signals for driving the light-emitting diode for a test operation.

Abstract: A display screen including a support including first and second opposite surfaces and holes on the first surface; photoluminescent blocks in at least part of the holes; a glue layer covering the first surface; display sub-pixels bonded to the support by the glue layer, each display sub-pixel including third and fourth opposite surfaces, the third surface being on the side of the support, and electrically-conductive pads exposed on the fourth surface; a filling layer covering the first surface between the display sub-pixels; and electrically-conductive tracks extending on the filling layer and on the fourth surfaces of the display sub-pixels in electrical and mechanical contact with the electrically-conductive pads.

Abstract: An optoelectronic device includes pixels that each have at least one primary sub-pixel having a primary light-emitting diode formed on a support face a substrate provided with a first primary semiconductive portion that has an overall elongated wire-like shape having a top end, a primary lattice parameter accommodation layer arranged on the top end of the first primary semiconductive portion, a second primary active semiconductive portion arranged at least on the primary lattice parameter accommodation layer, and a third primary semiconductive portion arranged on the second primary active semiconductive portion. The primary lattice parameter accommodation layer has, with the second primary active semiconductive portion, a first difference in primary lattice parameters between 2.12% and 0.93% relative to the second primary active semiconductive portion.

Abstract: A method of manufacturing an optoelectronic device including-light-emitting diodes comprising the forming of three-dimensional semiconductor elements made of a III-V compound, each comprising a lower portion and an upper portion and, for each semiconductor element, the forming of an active area covering the top of the upper portion and the forming of at least one semiconductor area of the III-V compound covering the active area. The upper portions are formed by vapor deposition at a pressure lower than 1.33 mPa.

Abstract: A light-emitting diode manufacturing method including the forming of three-dimensional semiconductor elements, extending along parallel axes, made of a III-V compound, each having a lower portion and a flared upper portion inscribed within a frustum of half apical angle ?. The method further comprises, for each semiconductor element, the forming of an active area covering the top of the upper portion and the forming of at least one semiconductor layer of the III-V compound covering the active area by vapor deposition at a pressure lower than 10 mPa, by using a flux of the group-III element along a direction inclined by an angle ?III and a flux of the group-V element along a direction inclined by an angle ?V with respect to the vertical axis, angles ?III and ?V being smaller than angle ?.

Abstract: A display pixel including a light-emitting diode, a circuit for driving the light-emitting diode, and first, second, third, and fourth conductive pads. The light-emitting diode is powered with a first voltage received between the first and second pads. The driver circuit controls the light-emitting diode based on first and second binary signals. The first signal is received between the third and second pads and alternates between a second voltage lower than the first voltage, and a third voltage, lower than the second voltage. The second signal is received between the fourth and second pads and alternates between the second voltage and the third voltage. The display pixel comprises a circuit for delivering a power supply voltage of the driver circuit, based on the first and second signals.

Abstract: An optoelectronic device includes at least one primary sub-pixel having at least one first primary stack with at least two first main layers of indium nitride and gallium nitride, the layers separated in pairs at least by a first intermediate layer of gallium nitride. The device includes a first primary active layer with at least one first quantum well, and a second primary stack having at least two second main layers of indium nitride and gallium nitride the layers separated in pairs by a second intermediate layer of gallium nitride; at least one second primary active layer with one second quantum well; and a first primary junction layer formed on and in contact with the second primary active layer, the first primary junction layer doped according to a second type of doping chosen from an N-type and a P-type dopings, the second type of doping different from the first type.

Abstract: A display block including an optoelectronic circuit including-light-emitting diodes of at least two display pixels and having a first surface of emission of the light radiations of the light-emitting diodes; and diffusing structures covering the optoelectronic circuit, each diffusing structure being in contact with a portion of the first emission surface and having a second surface of emission of the light radiations of the light-emitting diodes of one of the display pixels, the ratio of the sum of the areas of the second emission surfaces to the area of the first emission surface being greater than 2.

Abstract: A light-emitting diode 100 includes a first region 1, for example of the P type, formed in a first layer 10 and forming, in a direction normal to a basal plane, a stack with a second region 2 having at least one quantum well formed in a second layer 20, and including a third region 3, for example of the N type, extending in the direction normal to the plane, bordering and in contact with the first and second regions 1, 2, through the first and second layers 10, 20. A process for producing a light-emitting diode 100 in which the third region 3 is formed by implantation into and through the first and second layers 10, 20.

Abstract: A light emitting diode (LED) having an active region and a three-dimensional (3D) structure. The 3D LED includes a first GaN-based layer having a first content of Aluminium and a first content of Indium, and a second GaN-based layer interposed between and in contact with the first layer and the active region, having a second content of Aluminium and a second content of Indium, the second content of indium being strictly higher than the first content of indium so as to promote the formation of misfit dislocations at an interface between the first and second layers. Advantageously, the active region and the first and second layers extend along semi-polar crystallographic planes. Also described is a method for manufacturing such a 3D LED.

Abstract: A stack of antenna-effect materials that includes a superposition of rare-earth layers on chromophores layers. Also, an optoelectronic device the sub-pixels of which may include: a light-conversion module including a conversion pad and/or a filter. the conversion pad and/or the filter including the stack of antenna-effect materials.

Abstract: A manipulation system intended to manipulate micrometric devices, the manipulation system including a main body internally delimiting a suction chamber, suction nozzles including a suction channel emerging on the one hand towards the suction chamber, and on the other hand at a gripping end intended to be brought into contact with a micrometric device; shutter elements, configured to shut off a suction nozzle so as to prevent the gripping of a micrometric device or to allow a fluid communication between a gripping opening of the gripping end and the suction chamber, so as to allow the gripping of a micrometric device in contact with said gripping end. A manipulation method for manipulating micrometric devices by such a manipulation system.

Abstract: An optoelectronic device including a support including a face; light-emitting diodes lying on the face and including semiconductor elements in the form of wires, cones or truncated cones; for each light-emitting diode, an encapsulation block at least partially transparent to the radiation emitted by the light-emitting diodes and covering the light-emitting diode, the maximum thickness of the encapsulation block being comprised between 1 ?m and 30 ?m, interstices of air being present between the encapsulation blocks covering adjacent diodes; and an electrically conductive layer covering the encapsulation blocks, wherein the refractive index of the encapsulation block covering at least one of the light-emitting diodes is comprised between 1.3 and 1.6.

Abstract: A display screen intended to display a multiple-resolution image and including a plurality of pixels distributed on a support, the screen including a first zone of a face of the support having a first density of pixels, enabling to display a first part of the image at a first resolution, and a second zone of the face of the support having a second density of pixels, strictly greater than said first density, enabling to display a second part of the image at a second resolution. The disclosure also relates to a display system including such a screen and a method for producing the screen.

Abstract: An optoelectronic device includes a substrate and wire-shaped light-emitting diodes the wire shape of which is elongate along a longitudinal axis. Each light-emitting diode has a doped first region including, over all or some of its height measured along the longitudinal axis, of a central first segment that is substantially elongate along the longitudinal axis, this segment being based on gallium nitride, and of an external second segment, this segment being based on aluminium and gallium nitride. The second segment includes an external first portion arranged laterally around the first segment (121), all or some of the first portion having a first average atomic concentration of aluminium, and of a lower second portion arranged at least between the first portion of the second segment and the substrate, the second portion having a second average atomic concentration of aluminium being electrically insulating.

Abstract: A method for manufacturing an electronic device including the following steps: a) forming a wafer of electronic chips; b) fixing the wafer of electronic chips to a first support made of a stretchable material; c) removing and/or etching the wafer; and d) stretching the first support so as to move the chips away from one another.