Abstract: A method for local removal of semiconductor wires (SW) including the following steps: —Provide a stack of layers including at least a substrate, a nucleation layer, a growth masking layer, and a layer including SW being grown from the nucleation layer through the growth masking layer, —Encapsulate the SW with an encapsulation layer so as to form a composite layer including SW and encapsulating material, —Pattern a hard mask on the composite layer, so as to expose regions of the composite layer, —Perform anisotropic etching of the composite layer in the exposed regions, the anisotropic etching having a selectivity Ssemicon:Sencaps between semiconductor-based material and encapsulating material such as 0.9:1<Ssemicon:Sencaps<1.1:1.

Abstract: A method for manufacturing an optoelectronic device includes providing a support supporting a plurality of three-dimensional semiconductor structures, forming a sacrificial portion under a first set of 3D structures of the plurality of three-dimensional semiconductor structures, forming a barrier portion around the sacrificial portion, said barrier portion having a basal wall extending under the sacrificial portion, and a lateral wall extending at the edge of the sacrificial portion, forming an access trench up to the sacrificial portion, the access trench extending continuously along the lateral wall of the barrier portion, etching the sacrificial portion from the access trench, and removing the first set of 3D structures.

Abstract: A method for selectively filling, with a filling liquid, a first cavity from among a plurality of cavities, each cavity opening out at a front face of a substrate. The method includes a processing step for altering the surface energy of the first internal surface of the first cavity or the surface energy of the second internal surfaces of the other cavities, such that the first surface has a first surface energy and the second surfaces have a second surface energy, and a step including a sequence for spreading the filling liquid, the first energy and the second energy being adjusted such that the first and the second surfaces exert an attracting effect and a repelling effect, respectively, on the liquid.

Abstract: A pixel including: a light emitting element and a first transistor coupled in series between a reference node and a supply node; and a first circuit including a first terminal coupled to the control terminal of the first transistor, a second terminal coupled to the reference node, the first circuit being configured to generate a control voltage on the first terminal, the first circuit including a variable voltage divider configured to provide the control voltage on the first terminal; and a first switch coupled between the first terminal of the first circuit and a conductive terminal of the first transistor.

Abstract: A method for manufacturing an optoelectronic device including forming, by metal-organic chemical vapor deposition, MOCVD, wire-shaped, conical, or frustoconical semiconductor elements made of a III-V compound, doped or undoped, each semiconductor element extending along an axis and including a top, and forming by remote plasma chemical vapor deposition, RPCVD, or by molecular-beam epitaxy, MBE, or by hydride vapor phase epitaxy, HVPE, for each semiconductor element, an active area only on said top including at least a first semiconductor layer made of the III-V compound and a second semiconductor layer made of the III-V compound and an additional group-III element.

Abstract: A display pixel for a display screen including a light-emitting circuit including at least a first electroluminescent source, a controllable current source for driving the light-emitting circuit with current pulses and a driver circuit for controlling the current source, the driver circuit being configured to receive a digital signal and to control the current source for supplying the current pulses modulated by pulse-width modulation and modulated by pulse-amplitude modulation based on the bits of the digital signal.

Abstract: A pixel including: a light emitting element; a memory including at least one non-volatile memory cell; a first switch including a first output terminal coupled to the light emitting element, a second output terminal coupled to the non-volatile memory and an input terminal coupled to a supply node by a transistor; and a control circuit configured to generate a control voltage on a control terminal of the transistor, the control voltage being equal to: a first voltage during a step of resetting at least one cell of the memory; a second voltage during a step of setting at least one cell of the memory; a third voltage during a step of driving the element.

Abstract: An optoelectronic device including an optoelectronic circuit including light-emitting diodes, thin-film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes, and the transistors stack further including conductive elements, between and through the insulating layers, the conductive elements connecting at least some of the transistors to the light-emitting diodes The device further includes a support having a surface, the support being flexible and/or the surface being curved and non-planar, the optoelectronic circuit being connected to the surface on the side of the thin-film transistors.

Abstract: An optoelectronic device including a matrix of axial light-emitting diodes (LEDs). Each LED includes an active layer emitting electromagnetic radiation. The matrix forms a photonic crystal having at least first and second resonant peaks in a plane containing the active layers, each first and second peak amplifying the radiation intensity at a first and second wavelength respectively. Each light emitting diode includes an elongated semiconductor element, having a first portion of a first average diameter, a second portion extending the first portion and having a cross-sectional area decreasing away from the first portion, and the active layer extending the second portion and having a second average diameter strictly less than the first average diameter, the active layers being located at the first peak locations and absent at the secondary peak locations.

Abstract: One or more embodiments relate to a light-emitting diode and its manufacturing method. The diode includes at least one radial three-dimensional (3D) structure including a core having a first conductivity, and having a wire or pyramidal shape with edges substantially parallel or oblique to the direction z, an active region configured to emit light radiation, the active region including at least one radial part covering the edges of the core, a shell having a second conductivity, the light-emitting diode including a magnetic layer having a polarization along a main direction substantially parallel to the direction z, so as to increase a residence time at the active region of at least one among the first type and the second type of carriers.

Abstract: A method of manufacturing an optoelectronic device including the steps of manufacturing of the display pixel circuits, each comprising an emission surface, and on the surface, walls delimiting at least one cavity, of bonding of the display pixel circuits to a support, and of filling of the at least one cavity of each display pixel circuit with a first filling material to form a first color conversion module in the cavity.

Abstract: A chip including: four connection pads receiving respectively a supply voltage, a reference voltage, a first data signal, and a second data signal; at least two pixels; at least two drivers, each driver being configured to control one of the pixels, the drivers being coupled in a sequence; each driver including a first input and a first output, the first output of each driver being coupled to the first input of the following driver in the sequence, each driver being configured, in a programing step, to be programmed by storing digital data from the second data signal, and, in a display step, to drive one of the pixels from the stored digital data and from the first data signal.

Abstract: One or more embodiments relate to a light-emitting diode including at least one three-dimensional structure including: a first part having a first conductivity, a second part having a second conductivity, an active region configured to emit a light radiation, interposed between the first part and the second part, the diode also including: a first electrical contact configured to inject carriers into the first part, a second electrical contact configured to inject carriers into the second part. The diode includes a deceleration layer interposed between the first contact and the first part, configured to decelerate the carriers obtained from the first contact before being injected into the first part.

Abstract: One or more embodiments relate to a light-emitting diode and its manufacturing method. The diode includes at least one radial three-dimensional (3D) structure including a core having a first conductivity, and having a wire or pyramidal shape with edges substantially parallel or oblique to the direction z, an active region configured to emit light radiation, the active region including at least one radial part covering the edges of the core, a shell having a second conductivity, the light-emitting diode including a magnetic layer having a polarization along a main direction substantially parallel to the direction z, so as to increase a residence time at the active region of at least one among the first type and the second type of carriers.

Abstract: A method of forming a dielectric collar for semiconductor wires includes providing a layers stack and a semiconductor wires (SW) layer on top of the stack, forming a base layer at a lower part of the SW and a capping layer at an upper part of the SW, the base layer parallel to the basal plane and including a dielectric material surrounding the lower part of the SW, and the capping layer along a contour of the SW and including a dielectric material surrounding the upper part of the SW, the base and capping layers having thicknesses e1 and e2 with e1>2.e2, performing anisotropic etching along the direction normal to the basal plane to remove the dielectric material at a top part of the SW and leaving the dielectric material at least in the lower part of the SW.

Abstract: A display pixel including a first memory configured to store a digital color signal, a command circuit configured to perform write operations and read operations in the first memory, at least one light-emitting source, and a driver circuit configured to drive said light-emitting source based on the stored digital signal, wherein the command circuit is configured to operate as a finite-state machine to perform the write operations and the read operations.

Abstract: A method for protecting optoelectronic devices against electrostatic discharges. Each optoelectronic device includes an electronic circuit including at least one electronic component and one optoelectronic circuit bonded to the electronic circuit and including at last one optoelectronic component from among a light-emitting diode or a photodiode. The method includes forming of first and second wafers, one of the first or second wafer includes a plurality of copies of the electronic circuit and the other one of the first or second wafer including a plurality of copies of the optoelectronic circuit, the bonding of the first wafer to a support, the bonding of the second wafer to the first wafer, and the separation of the electronic devices from one another, wherein the first wafer and/or the second wafer comprises at least one system for protecting optoelectronic devices against electrostatic discharges.

Abstract: A display block including an optoelectronic circuit including-light-emitting diodes of at least two display pixels and having a first surface of emission of the light radiations of the light-emitting diodes; and diffusing structures covering the optoelectronic circuit, each diffusing structure being in contact with a portion of the first emission surface and having a second surface of emission of the light radiations of the light-emitting diodes of one of the display pixels, the ratio of the sum of the areas of the second emission surfaces to the area of the first emission surface being greater than 2.

Abstract: A display pixel including at least one light-emitting diode, and an electronic circuit including a storage circuit for storing at least one digital signal and a driver circuit configured to drive said light-emitting diode by pulse-width modulation, in a first operating mode, by switching on or off said light-emitting diode during first different durations according to the logical states of the bits of the digital signal or, in a second operating mode, by switching on or off said light-emitting diode during second different durations, at least partly different from the first durations, according to the logical states of the bits of the digital signal.

Abstract: A chip including: four connection pads receiving respectively a supply voltage, a reference voltage, a first data signal, and a second data signal; at least two pixels; at least two drivers, each driver being configured to control one of the pixels, the drivers being coupled in a sequence; each driver including a first input and a first output, the first output of each driver being coupled to the first input of the following driver in the sequence, each driver being configured, in a programing step, to be programmed by storing digital data from the second data signal, and, in a display step, to drive one of the pixels from the stored digital data and from the first data signal.