Abstract: An optoelectronic circuit including a substrate and display pixels, each display pixel having a first light-emitting diode adapted to emit a first radiation and a second light-emitting diode adapted to emit a second radiation, the first light-emitting diode having a planar structure and resting on the substrate and the second light-emitting diode having a tridimensional structure and resting on the first light-emitting diode or crossing at least partially through the first light-emitting diode.

Abstract: A nucleation structure for the epitaxial growth of three-dimensional semiconductor elements, including a substrate including a monocrystalline material forming a growth surface, a plurality of intermediate portions made of an intermediate crystalline material epitaxied from the growth surface and defining an upper intermediate surface, and a plurality of nucleation portions, made of a material including a transition metal forming a nucleation crystalline material, each epitaxied from the upper intermediate surface, and defining a nucleation surface suitable for the epitaxial growth of a three-dimensional semiconductor element.

Abstract: The invention relates to a method for manufacturing an optoelectronic device (1), comprising the following steps: a) providing a growth substrate (10) made from a semiconductor material; b) forming a plurality of diodes (20) each comprising a lower face (20i); c) removing at least a portion (12; 13) of the substrate so as to free the lower face (20i); wherein: step a) involves producing a lower part and an upper part of the substrate, the upper part (12) having a uniform thickness (eref) and a level of doping less than that of the lower part; step c) involving removal of the lower part (11) by selective chemical etching with respect to the upper part (12).

Abstract: An optoelectronic device including comprising including including light-emitting components, each light-emitting component being adapted to emit a first radiation at a first wavelength, and photoluminescent blocks, each photoluminescent block facing at least one light-emitting component and comprising a single quantum well or multiple quantum wells, photoluminescent blocks being divided into first photoluminescent blocks adapted to convert by optical pumping the first radiation into a second radiation at a second wavelength, second photoluminescent blocks adapted to convert by optical pumping the first radiation into a third radiation at a third wavelength and third photoluminescent blocks adapted to convert by optical pumping the first radiation into a fourth radiation at a fourth wavelength.

Abstract: A method of manufacturing an optoelectronic device, comprising the successive steps of: a) providing a substrate at least partially made of a semiconductor material and having first and second opposite faces; b) forming light-emitting diodes on the substrate, each light-emitting diode comprising a semiconductor microwire or nanowire covered by a shell; c) forming an encapsulation layer surrounding the light-emitting diodes; d) forming conductive pads on the encapsulation layer, on the side of the encapsulation layer opposite to the substrate, in contact with the light-emitting diodes; and e) forming through openings in the substrate from the side of the second face, said openings being opposite at least part of the light-emitting diodes and delimiting walls in the substrate.

Abstract: An optoelectronic device including: a first circuit including a substrate having first and second opposite faces, the first circuit having display pixels, each display pixel having, on the side of the first face, a first light-emitting diode having a first active region adapted to emit a first radiation and, extending from the second face, a second light-emitting diode having a second active region adapted to emit a second radiation, the surface area, viewed from a direction orthogonal to the first face, of the first active region being at least twice as big as the surface area, viewed from the direction, of the second active region; and a second circuit bonded to the first circuit on the side of the first light-emitting diode and electrically linked to the first and second light-emitting diodes.

Abstract: An optoelectronic device, including: a support; at least one first electrically-conductive layer covering the support; display pixel circuits including first and second opposite surfaces bonded to the first electrically-conductive layer, each display pixel circuit including an electronic circuit including the first surface and a third surface opposite to the first surface, the first surface being bonded to the first electrically-conductive layer, and at least one optoelectronic circuit bonded to the third surface and including at least one light-emitting diode, at least one of the electrodes of the light-emitting diode being connected to the electronic circuit by the third surface; at least one second electrically-conductive layer covering the display pixel circuits and electrically coupled to the electronic circuits of the display pixel circuits on the side of the second surface.

Abstract: A method of controlling an optoelectronic device including display pixels arranged in rows and in columns. The optoelectronic device further includes first electrodes, each connected to the display pixels of at least one row, second electrodes, each connected to the display pixels of at least one column, and a circuit for controlling the first and second electrodes. The method includes, in a first phase, the activation of the display pixels connected to one of the first electrodes and to one of the second electrodes by the following steps, simultaneously carried out: taking one of the first electrodes to a first potential, the other first electrodes being maintained at a second potential smaller than the first potential; and taking one of the second electrodes to a third potential smaller than the second potential, the other second electrodes being maintained at a fourth potential greater than the third potential and smaller than the second potential.

Abstract: An optoelectronic device including first and second active regions suitable for emitting or detecting electromagnetic radiation and containing a first semiconductor material that predominantly contains a first compound selected from Compounds III-V, Compounds II-VI, and mixtures of same. The first active regions have a first polarity, and the second active regions have a second polarity different from the first polarity.

Abstract: The process for growing at least one semiconductor nanowire (3), said growth process comprising a step of forming, on a substrate (1), a nucleation layer (2) for the growth of the nanowire (3) and a step of growth of the nanowire (3). The step of formation of the nucleation layer (2) comprises the following steps: deposition onto the substrate (1) of a layer of a transition metal (4) chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; nitridation of at least a part (2) of the transition metal layer so as to form a transition metal nitride layer having a surface intended for growing the nanowire (3).

Abstract: A method for producing a photo-luminescent material, including the following steps: (1) producing, according to a sol-gel method, a sol and then a gel of first precursors of a first substance from the sol; (2) crushing the gel; (3) optionally, annealing the gel in order to form first particles of the first substance of which the average size is between 1 pm and 20 um; (4) producing a colloidal dispersion of second particles of a second substance, different from the first substance or identical to the first substance, of which the average size is between 5 nm and 400 nm; (5) mixing the colloidal dispersion with the sol in step (1) before forming the gel or with the first particles after step (3); and (6) annealing the mixture obtained in step (5), resulting in an increase in the compactness of the mixture, the average size of the second particles after annealing being between 100 nm and 900 nm.

Abstract: An optoelectronic device including: a support; blocks of a semiconductor material, resting on the support and each including a first surface on the side opposite to the support and lateral walls; a nucleation layer on each first surface; a first insulating layer covering each nucleation layer and including an opening exposing a portion of the nucleation layer; a semiconductor element resting on each first insulating layer and in contact with the nucleation layer covered with the first insulating layer in the opening; a shell covering each semiconductor element and including an active layer capable of emitting or absorbing an electromagnetic radiation; and a first conductive layer, reflecting the radiation, extending between the semiconductor elements and extending over at least a portion of the lateral walls of the blocks.

Abstract: An optoelectronic device, including: light-emitting sources, each light-emitting source being capable of emitting a first radiation at a first wavelength; photoluminescent blocks distributed into first photo-luminescent blocks capable of converting by optical pumping the first radiation into a second radiation at a second wavelength and second photoluminescent blocks capable of converting by optical pumping the first radiation into a third radiation at a third wavelength; and for each photoluminescent block, an optical coupler including a first photonic crystal at least partially surrounding the photoluminescent block and covering, with the photo-luminescent block, one of the light-emitting sources next to the photoluminescent block, the optical coupler being capable of modifying the propagation direction of rays of the first radiation emitted by the light-emitting source to redirect the rays towards the photoluminescent block.

Abstract: An optoelectronic device including a substrate with first and second opposite surfaces; and electrical insulation side elements extending from the first surface to the second surface and defining, within the substrate, first semi-conductive or conductive portions which are electrically insulated from each other. The optoelectronic device also includes, for each first portion a first conductive contact pad on the second surface in contact with the first portion and a set of light-emitting diodes resting on the first surface and electrically connected to the first portion. The optoelectronic device also includes a conductive, at least partially transparent electrode layer covering all the light-emitting diodes; an insulating, at least partially transparent encapsulation layer covering the electrode layer; and at least one second conductive contact pad electrically connected to the electrode layer.

Abstract: An optoelectronic device including three-dimensional semiconductor elements predominantly made of a first compound selected from among the group consisting of Compounds III-V, Compounds II-VI, and Compounds IV. Each semiconductor element defines, optionally with insulating portions partially covering said semiconductor element, at least one first surface including contiguous facets angled relative to each other. The optoelectronic device includes quantum dots at least some of the seams between the facets. The quantum dots are predominantly made of a mixture of the first compound and an additional element and are suitable for emitting or receiving a first electromagnetic radiation at a first wavelength.

Abstract: An electronic circuit including a semiconducting or conducting substrate having first and second opposite surfaces and at least first and second non-parallel electrically insulating trenches that extend from the first surface in the substrate, define at least one portion of the substrate and join at a junction, the portion of the substrate including a protrusion that extends to the junction.

Abstract: An optoelectronic device including a substrate with first and second opposite surfaces; and electrical insulation side elements extending from the first surface to the second surface and defining, within the substrate, first semi-conductive or conductive portions which are electrically insulated from each other. The optoelectronic device also includes, for each first portion a first conductive contact pad on the second surface in contact with the first portion and a set of light-emitting diodes resting on the first surface and electrically connected to the first portion. The optoelectronic device also includes a conductive, at least partially transparent electrode layer covering all the light-emitting diodes; an insulating, at least partially transparent encapsulation layer covering the electrode layer; and at least one second conductive contact pad electrically connected to the electrode layer.

Abstract: The invention relates to a method for manufacturing an optoelectronic device (50) including wire-like, conical, or frustoconical semiconductor elements (20) predominantly comprising a III-V compound. Each semiconductor element extends along an axis and includes a portion (54), the side surfaces (55) of which are covered with a shell (56) including at least one active region (31), wherein the portions are created by continuous growth in a reactor, and wherein the temperature in the reactor varies in an uninterrupted manner from a first temperature value that favors growth of first crystallographic planes perpendicular to said axis, to a second temperature value that is strictly lower than the first temperature value and favors growth of second crystallographic planes parallel to said axis.

Abstract: An optoelectronic device including first and second active regions suitable for emitting or detecting electromagnetic radiation and containing a first semiconductor material that predominantly contains a first compound selected from Compounds III-V, Compounds II-VI, and mixtures of same. The first active regions have a first polarity, and the second active regions have a second polarity different from the first polarity.

Abstract: An optoelectronic circuit including series-connected sets of light emitting diodes and a module for controlling said sets, the sets of light emitting diodes being arranged on a support and being distributed among a series of aligned basic circuits which are located on the support and each of which includes at least one light emitting diode from each set.