Abstract: A light-emitting diode manufacturing method including the forming of three-dimensional semiconductor elements, extending along parallel axes, made of a III-V compound, each having a lower portion and a flared upper portion inscribed within a frustum of half apical angle ?. The method further comprises, for each semiconductor element, the forming of an active area covering the top of the upper portion and the forming of at least one semiconductor layer of the III-V compound covering the active area by vapor deposition at a pressure lower than 10 mPa, by using a flux of the group-III element along a direction inclined by an angle ?III and a flux of the group-V element along a direction inclined by an angle ?V with respect to the vertical axis, angles ?III and ?V being smaller than angle ?.

Abstract: A display pixel including at least one light-emitting diode, a circuit for driving the light-emitting diode, and first, second, third, and fourth conductive pads. The driver circuit is powered with a first power supply voltage received between the first and second pads. The light-emitting diode is powered with a first binary signal, received between the third and second pads, and alternating between a second power supply voltage, greater than the first voltage, and a third voltage, smaller than the first voltage. The driver circuit is configured to determine a digital signal based on the values of a second binary signal on the fourth pad received during each of first pulses of the first binary signal at the third voltage and to control the light-emitting diode from the digital signal.

Abstract: A process for producing at least two adjacent regions, each comprising an array of light-emitting wires connected together in a given region by a transparent conductive layer, comprises: producing, on a substrate, a plurality of individual zones for growing wires extending over an area greater than the cumulative area of the two chips; growing wires in the individual growth zones; removing wires from at least one zone forming an initial free area to define the arrays of wires, the initial free area comprising individual growth zones level with the removed wires; and depositing a transparent conductive layer on each array of wires to electrically connect the wires of a given array of wires, each conductive layer being separated from the conductive layer of the neighbouring region by a free area. A device obtained using the process of the invention is also provided.

Abstract: An optoelectronic device including a support including a face; light-emitting diodes lying on the face and comprising including semiconductor elements in the form of wires, cones or truncated cones; for each light-emitting diode, an encapsulation block at least partially transparent to the radiation emitted by the light-emitting diodes and covering the light-emitting diode, the maximum thickness of the encapsulation block being comprised between 1 ?m and 30 ?m, interstices of air being present between the encapsulation blocks covering adjacent diodes; and an electrically conductive layer covering the encapsulation blocks, wherein the refractive index of the encapsulation block covering at least one of the light-emitting diodes is comprised between 1.3 and 1.6.

Abstract: An optoelectronic device includes a number of pixels, with each pixel including a lighting mechanism having at least one light-emitting diode capable of emitting an initial light beam, a light-conversion module having a plurality of conversion pads including at least one primary conversion pad and at least one secondary conversion pad. Each pixel includes a light-adjustment system configured to control at least one element chosen from a relative position between the lighting mechanism and the light-conversion module and the initial light beam. The action of the light-adjustment system is adapted so that the primary conversion pad and the secondary conversion pad emit a first light beam and a second light beam respectively, from the initial light beam, simultaneously or alternately in a predetermined sequence.

Abstract: An optoelectronic device includes first and second light-emitting diodes, each LED having: a first semiconductor portion, with a first type of doping, having a wire-like shape along an axis and having side surfaces parallel to this axis; an active portion arranged at least partially on a top end of the first portion; and a second semiconductor portion, with a second type of doping, arranged at least partially on all or part of the active portion. The optoelectronic device further includes an electrically resistive layer having an electrical resistance that is higher than that of the active portion, covering at least all or part of the side surfaces of the first portion and all or part of the surface of the top end of the first portion not covered by the active portion. The resistive layers of the first and second LEDs are separated from one another.

Abstract: An optoelectronic device including an integrated circuit including light-emitting diodes, thin film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes and the transistors, said stack further including conductive elements, between and through said insulating layers, said conductive elements connecting at least some of the transistors to the light-emitting diodes.

Abstract: A method for protecting optoelectronic devices against electrostatic discharges. Each optoelectronic device includes an electronic circuit including at least one electronic component and one optoelectronic circuit bonded to the electronic circuit and including at last one optoelectronic component from among a light-emitting diode or a photodiode. The method includes forming of first and second wafers, one of the first or second wafer includes a plurality of copies of the electronic circuit and the other one of the first or second wafer including a plurality of copies of the optoelectronic circuit, the bonding of the first wafer to a support, the bonding of the second wafer to the first wafer, and the separation of the electronic devices from one another, wherein the first wafer and/or the second wafer comprises at least one system for protecting optoelectronic devices against electrostatic discharges.

Abstract: An optoelectronic device including an array of axial light-emitting diodes. The light-emitting diodes each include an active area configured to emit an electromagnetic radiation having an emission spectrum including a maximum at a first wavelength. The array forms a photonic crystal configured to be able to form three resonance peaks amplifying the intensity of said electromagnetic radiation at at least second, third, and fourth wavelengths.

Abstract: A display pixel including at least one light-emitting diode, a circuit for driving the light-emitting diode, and first, second, third, and fourth conductive pads. The driver circuit is powered with a first power supply voltage received between the first and second pads. The light-emitting diode is powered with a first binary signal, received between the third and second pads, and alternating between a second power supply voltage, greater than the first voltage, and a third voltage, smaller than the first voltage. The driver circuit is configured to determine a digital signal based on the values of a second binary signal on the fourth pad received during each of first pulses of the first binary signal at the third voltage and to control the light-emitting diode from the digital signal.

Abstract: An optoelectronic device having a set of pixels wherein each pixel has a sub-pixel capable of emitting a primary light beam, a set of pixels each pixel being adjacent to a pixel wherein each secondary pixel has at least one secondary sub-pixel capable of emitting a secondary light beam, a set of optical systems arranged so as to be able to cover an entire pixel belonging to one of the sets and at least part of the sub-pixels of at least one of the adjacent pixels belonging to the other set, the number of pixels being greater than twice the number of optical systems. At least one movement mechanism applies a relative movement between the set and the sets according to a predetermined sequence.

Abstract: An optoelectronic device including an array of axial light-emitting diodes, the light-emitting diodes each including an active area configured to emit an electromagnetic radiation having an emission spectrum comprising a maximum at a first wavelength, the array forming a photonic crystal configured to form a resonance peak amplifying the intensity of said electromagnetic radiation at at least one second wavelength different from the first wavelength.

Abstract: The manufacture of an optoelectronic device includes the formation of light-emitting diodes where each one has a wire form, the formation of spacing walls made of a first dielectric material transparent to the light radiation originating from the diodes. The lateral sidewalls of each diode are surrounded by spacing walls. Light confinement walls are made of a second material adapted to block the light radiation originating from the diodes. The light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein. A thin layer of the second material is deposited so as to directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein and cover the upper border of the light-emitting diodes. The empty spaces delimited between the spacing walls at the level of the areas between the light-emitting diodes are also filled by the thin layer.

Abstract: An optoelectronic device including an array of axial light-emitting diodes (LED), each including an active area configured to emit electromagnetic radiation whose emission spectrum includes a maximum at a first wavelength. The device further includes a cladding for each LED, transparent to said radiation of a first material surrounding the sidewalls of the LED over at least a portion of the LED, each cladding having a thickness greater than 10 nm. The device further comprises layer, between the claddings, transparent to said radiation, made of a second material different from the first material, the second material being electrically insulating, the array forming a photonic crystal.

Abstract: An optoelectronic device including a matrix of axial light-emitting diodes (LEDs). Each LED includes an active layer emitting electromagnetic radiation. The matrix forms a photonic crystal having at least first and second resonant peaks in a plane containing the active layers, each first and second peak amplifying the radiation intensity at a first and second wavelength respectively. Each light emitting diode includes an elongated semiconductor element, having a first portion of a first average diameter, a second portion extending the first portion and having a cross-sectional area decreasing away from the first portion, and the active layer extending the second portion and having a second average diameter strictly less than the first average diameter, the active layers being located at the first peak locations and absent at the secondary peak locations.

Abstract: A method for manufacturing an optoelectronic device including the steps of forming a substrate having a support face; forming a first series of first areas adapted to the formation of all or part of light-emitting diodes, forming a second series of second areas on the support face, adapted to the formation of light confinement wall elements capable of forming a light confinement wall, the second areas defining therebetween sub-pixel areas; forming, from the first areas, light-emitting diodes; forming, by the same technique as in the previous step, from the second areas, light confinement wall elements, concomitantly with all or part of the light-emitting diodes which are formed in the previous step.

Abstract: An image display system includes at least one user parameter analyser configured to determine at least one parameter associated with a user, an image display screen having luminous pixels, at least one graphics processing unit configured to process at least one first main image that can be displayed on the image display screen and that is representative of a first zone of a main scene. The system further includes at least one image buffer device configured to store at least the first main image, and a graphics controller configured to control a display of at least one first secondary image on the image display screen, the first secondary image having a first portion of the first main image included in the first main image and positioned within the first main image as a function of a first user parameter.

Abstract: A device including a display screen including display pixels arranged in rows and in columns, including a first row and a first column. The device further includes a display screen control circuit configured to, in a first mode, start the display of a first image on the first row and on the first column and, in a second mode, start the display of a second image on one of the rows different from the first row and/or on one of the columns different from the first column.

Abstract: An optoelectronic device including a first circuit including at least one light-emitting diode emitting through a first surface of the first circuit and including first and second electrodes; a second circuit for controlling the light-emitting diode, positioned on a second surface of the first circuit opposite to the first surface, including first and second electrically-conductive pads; and an electrically-conductive layer located at the interface between the first and second circuits, the electrically-conductive layer being divided into first and second portions orthogonally to the stack of the first and second circuits, the first electrode being electrically coupled to the first conductive pad via the first portion of the conductive layer and the second electrode being electrically coupled to the second conductive pad via the second portion of the conductive layer.

Abstract: An optoelectronic device including first, second, and third three-dimensional light-emitting diodes having an axial configuration. Each light-emitting diode includes a semiconductor element and an active region resting on the semiconductor element. Each semiconductor element corresponds to a microwire, a nanowire, a nanometer- or micrometer-range conical or frustoconical element. The first, second, and third light-emitting diodes are configured to respectively emit first, second, and third radiations at first, second, and third wavelengths. The semiconductor elements of the first, second, and third light-emitting diodes respectively have first, second, and third diameters. The first diameter is smaller than the second diameter and the second diameter is smaller than the third diameter, the first wavelength being greater than the third wavelength and the second wavelength being greater than the first wavelength.