Abstract: Magnetoresistive element (20) for sensing an external magnetic field, comprising a tunnel barrier layer (22) sandwiched between a ferromagnetic reference layer (21) having a pinned reference magnetization (210), and a ferromagnetic sense layer (23) having a sense magnetization (230), wherein the reference, tunnel barrier, and sense layers (21, 22, 23) are stacked perpendicular to a layer plane (PL) thereof. The reference magnetization (210) is oriented substantially perpendicular to the layer plane (PL), and the sense magnetization (230) is oriented substantially parallel to the layer plane (PL). At least the sense layer (23) has an annular cross-section in the layer plane (PL), with an inner diameter (Dint) and an outer diameter (Dout). The sense magnetization (230) has a closed flux path configuration that is orientable either in the clockwise or counterclockwise direction.

Abstract: According to one aspect, a magnetic flux concentrator includes: a ferromagnetic material having a loop shape interrupted by an air gap region and forming a central opening, wherein the air gap region includes a first side having at least two protrusions and a second side having at least one protrusion interleaved with, and not in mechanical contact with, the protrusions of the first side. According to another aspect, a sensor utilizes such a magnetic flux concentrator to detect a difference in current between two conductors.

Abstract: A sensor, comprising: one or more magnetic field sensing elements that are configured to generate a sensing signal, the sensing signal being indicative of a strength of a magnetic field that is incident on the one or more magnetic field sensing elements; a processing circuitry that is configured to generate an output signal based on the sensing signal; and a first amplifier that is configured to drive a first coil based on the sensing signal, the first coil being coupled in a first negative feedback loop of the first amplifier, wherein the first negative feedback loop spans between a first input terminal of the first amplifier and a first output terminal of the first amplifier, and wherein the sensing signal is, at least in part, applied at the first input terminals of the first amplifier.

Abstract: A sensor, comprising: a first signal path including one or more first Hall elements that are configured to generate a first signal in response to an external magnetic field that is incident on the sensor and a reference magnetic field, the first signal path being configured to process the first signal to generate a first processed signal; a second signal path including one or more second Hall elements that are configured to generate a second signal in response to the external magnetic field and the reference magnetic field, the second signal path being configured to process the second signal to generate a second processed signal; a feedback coil that is configured to generate the reference magnetic field; and a feedback circuit that is configured to use the use the first processed signal to adjust respective biases of the first Hall elements and the second Hall elements.

Abstract: A sensor integrated circuit includes a sensing circuit configured to generate the sensor output signal and a fault circuit to detect a fault and generate a fault signal indicative of the fault. A combined signal indicative of the fault signal when a fault is detected and indicative of a reference voltage associated with the sensor IC at other times is provided at a shared connection of the sensor IC. Embodiments include a current sensor IC and fault detectors configured to detect one or more faults.

Abstract: An integrated circuit package having more than one semiconductor die includes a spark gap to provide a current path designed to protect the device. The spark gap can be provided between an exposed portion of a corner lead and an exposed portion of a tie bar and/or between exposed portions of adjacent leads. The spark gap distance is designed to achieve required ratings for a given application. Stacked and side-by-side die configurations are described.

Abstract: A drive circuit comprises a transformer, a primary side circuit communicating with a primary winding of the transformer, and a secondary side circuit communicating with a secondary winding of the transformer. The primary side circuit couples to a primary side supply voltage and to an input signal and couples a first signal to the primary winding. The secondary side circuit communicates with the semiconductor switch and provides, responsive to the first signal, a second signal to control the semiconductor switch, comprising at least one of a primary bias and a secondary bias. For a first gate charge level range, the secondary side circuit provides the primary bias. For a second gate charge level range greater than the first range, the secondary side circuit is controlled by a secondary bias circuit comprising a storage capacitor configured to accumulate voltage when the secondary side circuit is providing the primary bias.

Abstract: A system, comprising: a reference magnetic field source that is configured to generate a reference magnetic field; a plurality of magnetic field sensing elements arranged in a sensing bridge, the sensing bridge being configured to sense the reference magnetic field and an external magnetic field simultaneously, the sensing bridge being configured to output a first signal and a second signal; a first circuit that is configured to generate a common mode signal of the sensing bridge based on the first signal and the second signal; an adjustment circuit that is configured to adjust a sensitivity of the sensing bridge based, at least in part, on a common mode signal of the sensing bridge; and a processing circuitry that is configured to use a differential signal of the sensing bridge to generate an output signal, the differential signal being based on a strength of the external magnetic field.

Abstract: A speed sensor device includes sensing elements to sense an angle of a moving target and to generate sine and cosine signals in response thereto; a signal condition circuit to process the sine and cosine signals, the processed sine and cosine signals having a phase lag introduced by the signal condition circuit; and a phase lead filter to receive the processed sine and cosine signals and to reduce the phase lag in the processed sine and cosine signals.

Abstract: Magnetic sensing device integrated in a magnetic switch device that makes or breaks contact in the presence of an external magnetic field, comprising: a first transistor biased at a first terminal by a first bias voltage and a first magnetoresistive element having a first resistance variable with the external magnetic field. At a reference field strength, the first resistance has a first reference resistance value, and the first bias voltage is adjustable to control a first current at the second terminal of the first transistor at a first reference current value. When the external magnetic field is varied around the reference field strength, the first variable resistance varies around the first reference resistance value by a resistance delta, such that the first current modulates around the first reference current value by a current delta. A magnetic switch device comprising the magnetic sensing device is also disclosed.

Abstract: A magnetic field sensor includes magnetoresistance elements supported by a surface of the die defining a plane, and a concentrator layer over the surface of the die and having an aperture. A first magnetoresistance element is adjacent to a first edge of the aperture and has a first reference direction parallel to the surface of the die and substantially perpendicular to the first aperture edge and a second magnetoresistance element is adjacent to a second edge of the aperture and has the first reference direction. The concentrator layer redirects the applied magnetic field to present a differential field parallel to the plane of the die to the magnetoresistance elements in response to applied field perpendicular to the plane of the die and to present a reduced magnitude and common mode field to the magnetoresistance elements in response to the applied field parallel to the plane of the die.

Abstract: A sensor comprising: a sensing bridge including a first leg and a second leg, the first leg including a first magnetoresistance (MR) element that is coupled to a second MR element via a first transistor, the second leg including a third MR element that is coupled to a fourth MR element via a second transistor; a frontend circuit having a first input and a second input, the first input being coupled to the first leg, and the second input being coupled to the second leg; and a first resistive digital-to-analog converter (R-DAC) that is coupled to at least the first leg, the first R-DAC being arranged to receive a first trim code and modify a first resistance of the first leg based on the first trim code.

Abstract: A device includes a signal generator configured to generate signals to control first and second switches coupled in a first half-bridge DC-DC converter configuration, the first and second switches being configured in a buck mode of operation or in a boost mode of operation.

Abstract: Aspects of the present disclosure include systems, structures, integrated circuit (IC) packages or modules, circuits, and methods providing a transformer with first and second coils and a sense coil configured adjacent to and closely coupled with the second coil. The circuits, ICs and IC packages and modules may include various types of circuits. In some examples, IC packages or modules may include a galvanically-isolated gate driver or other high voltage circuit.

Abstract: A redundant inductive sensor system includes at least two interface circuits, each associated with a respective transmitting coil that is electromagnetically coupled to one or more receiving coils. The first interface circuit transmits during a first transmitting interval and the second interface circuit transmits during a second transmitting interval that does not overlap with the first transmitting interval. The first interface circuit receives the second signal during a first listening interval of the first interface circuit encompassing the second transmitting interval and the second interface circuit receives the first signal during a second listening interval of the second interface circuit encompassing the first transmitting interval. By listening to transmissions from transmitting coils other than an associated transmitting coil, interface circuits can detect errors in other interface circuits.

Abstract: A current sensor integrated circuit (IC) package includes an insulation structure disposed between a semiconductor die and a lead frame to control gap height and prevent the die from tilting and dropping the magnetic field coupling between the die the primary conductor. An insulation structure is disposed between the die and the lead frame such that the die remains level and magnetic coupling remains intact. An insulation structure may control the gap height between the lead frame and the die evenly during transfer molding, by supporting the die across its length and/or width. Epoxy dots are also or instead used to control the gap height and eliminate die tilt.

Abstract: Methods and apparatus for an MR device having a ferromagnetic material, a heavy metal layer configured to flow a charge current, and an insulating layer between the ferromagnetic material and the heavy metal layer. The insulating layer is configured to electrically insulate and to magnetically couple the heavy metal layer and the ferromagnetic layer for generating a field like (FL) field in the ferromagnetic material in response to the charge current. In some embodiments, the MR device comprises a TMR device having a free layer or a reference layer oriented by the charge current. In other embodiments, the MR device comprises a GMR device.

Abstract: A sensor, including: a gradiometer including a plurality of magnetoresistors, the gradiometer being configured to generate a sensing signal in response to a magnetic field that is at least in part produced as a result of an electrical current flowing through a conductor; and electronic circuitry configured to detect an electrical current consumption of the gradiometer, compare the electrical current consumption against at least one of a first threshold and a second threshold, and output an indication that the sensor is subject to tampering based on an outcome of the comparison.

Abstract: According to one aspect of the present disclosure, a semiconductor device includes a substrate having a first type dopant. In some embodiments, the semiconductor device also includes an epitaxial layer above the substrate, having a second type dopant and a top region. In some embodiments, the semiconductor device also includes a trench in the top region of the epitaxial layer; at least one doped ring implanted in the epitaxial layer below the trench; and a dielectric material filling within the trench. In some embodiments, there is a twelve-sided body tie in the epitaxial layer, wherein the sides of the twelve-sided body tie are not all equal to each other.

Abstract: A signal encoding and decoding protocol to transmit both clock information and a data payload in a single line is disclosed. Data may be encoded in a unipolar non-return-to-zero line in which an initial pulse width determines a clock frequency, followed by a series of pulses indicating the data payload. Each clock transition following an initial synchronization pulse indicates a data bit in which the value of the bit is determined in relation to the previous bit. Edge information may indicate a change in bit value from the previous bit. If the transmission signal remains at the same level for a subsequent clock period, the bit value remains the same.