Patents Assigned to AmberWave Systems
  • Methods of fabricating contact regions for FET incorporating SiGe
    Publication number: 20060189109
    Abstract: Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.
    Type: Application
    Filed: April 27, 2006
    Publication date: August 24, 2006
    Applicant: AmberWave Systems
    Inventor: Eugene Fitzgerald
  • Method of producing high quality relaxed silicon germanium layers
    Publication number: 20060174818
    Abstract: A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1-xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.
    Type: Application
    Filed: March 9, 2006
    Publication date: August 10, 2006
    Applicant: AmberWave Systems
    Inventors: Eugene Fitzgerald, Richard Westhoff, Matthew Currie, Christopher Vineis, Thomas Langdo