Patents Assigned to American Air Liquide, Inc.
  • Patent number: 10858271
    Abstract: Disclosed are methods for continuous production of ozone strong water, the methods comprising the steps of injecting an acidification agent into a pressurized feed water to maintain a pH value of the pressurized feed water below 7, diffusing a two-phase mixture of O2-O3 gas and recirculated water into a body of acidic pressurized water to dissolve ozone into the acidic pressurized water. The disclosed methods include simultaneously maintaining a start-up mode in an upper portion of the dissolution column that favors high efficiency of ozone mass transfer into the acidic pressurized water and a steady state mode in a lower portion of the dissolution column that favors a high concentration of dissolved ozone in the acidic pressurized water coexistent in the body of the acidic pressurized water, wherein an ozone concentration gradient is formed along a height of the body of the acidic pressurized water.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: December 8, 2020
    Assignees: L'Air Liquide, SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Claude, American Air Liquide, Inc.
    Inventors: Jan Mante, Vasuhi Rasanayagam, Midhun Joy, Rovshan Mahmudov, Siavash Isazadeh
  • Patent number: 10851000
    Abstract: Disclosed are systems for continuous production of ozone strong water, the systems comprising an injection device that injects an acidification agent into a pressurized feed liquid, a diffuser device that injects ozone into a body of the acidic pressurized feed water, and injection nozzles each controlled by a valve that adjust a flow rate of the ozone strong water discharged from a dissolution column to match a flow rate of the acidic pressurized feed water fed to the dissolution column, thereby maintaining a start-up mode in an upper portion of the dissolution column that favors a high efficiency of ozone mass transfer and a steady-state mode in a lower portion of the dissolution column that favors a high dissolved ozone concentration coexistent in the body of the acidic pressurized liquid, wherein a concentration gradient of dissolved ozone is formed along a height of the body of the acidic pressurized liquid.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: December 1, 2020
    Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.
    Inventors: Jan Mante, Vasuhi Rasanayagam, Midhun Joy, Rovshan Mahmudov, Siavash Isazadeh
  • Patent number: 10822673
    Abstract: Method for removing arsenic mineral from a lead concentrate by reverse flotation with an ozone pre-treatment. The method comprises the steps of: receiving a slurry of the lead concentrate that has previously undergone flotation processes, bubbling ozone into the slurry of the lead concentrate to remove reagents used in previous flotation processes, adding a sulfide salt to the slurry to depress lead mineral, adding an alkali to increase the pH of the slurry, adding a collector and then a frother to the slurry for a reverse flotation processing and floating the arsenic mineral out of the lead mineral to obtain a now-purified lead concentrate.
    Type: Grant
    Filed: December 17, 2019
    Date of Patent: November 3, 2020
    Assignee: American Air Liquide, Inc.
    Inventor: Sylvester Zuttah
  • Patent number: 10752507
    Abstract: Synthesis of silanes with more than three silicon atoms are disclosed (i.e., (SinH(2n+2) with n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), and mixtures thereof.
    Type: Grant
    Filed: October 11, 2018
    Date of Patent: August 25, 2020
    Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.
    Inventors: Grigory Nikiforov, Guillaume Husson, Gennadiy Itov, Yang Wang
  • Patent number: 10720335
    Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: July 21, 2020
    Assignees: American Air Liquide, Inc., L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, Air Liquide Electronics U.S. LP
    Inventors: Peng Shen, Christian Dussarrat, Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford
  • Patent number: 10683221
    Abstract: A device and method for injection of oxygen-rich gas into a body of liquid with oxygen recycling are disclosed. The device comprises a rotary hollow shaft vertically passing through a float partially immersed in the liquid, an impeller attached to the lower end of the rotary hollow shaft, a columnar structure, surrounding the rotary hollow shaft, mounted on the bottom side of the float and vertically extending into the liquid, a gas diffusion chamber formed by the columnar structure, the float and the liquid surface under the float, and a gas injection conduit passing through the float for delivering the oxygen gas into the gas diffusion chamber, wherein a vacuum is generated in the body of the liquid around the impeller when the impeller is driven to rotate, so that the oxygen-rich gas in the gas diffusion chamber is sucked into the body of the liquid and mixed therein.
    Type: Grant
    Filed: December 5, 2018
    Date of Patent: June 16, 2020
    Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.
    Inventors: Milson Carvalho, Maicon Neryz, Ivan Pajolli, Joerg Schwerdt, Vasuhi Rasanayagam, Chunqiong Shi
  • Patent number: 10669160
    Abstract: Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.
    Type: Grant
    Filed: April 30, 2018
    Date of Patent: June 2, 2020
    Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.
    Inventors: Yumin Liu, Feng Li, Zhiwen Wan, Claudia Fafard, Stefan Wiese, Guillaume Husson, Grigory Nikiforov, Bin Sui, Jean-Marc Girard
  • Patent number: 10647578
    Abstract: Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH3)x(SiH2—)y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: May 12, 2020
    Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.
    Inventors: Antonio Sanchez, Gennadiy Itov, Manish Khandelwal, Cole Ritter, Peng Zhang, Jean-Marc Girard, Zhiwen Wan, Glenn Kuchenbeiser, David Orban, Sean Kerrigan, Reno Pesaresi, Matthew Damien Stephens, Yang Wang, Guillaume Husson
  • Patent number: 10629451
    Abstract: Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.
    Type: Grant
    Filed: February 1, 2019
    Date of Patent: April 21, 2020
    Assignee: American Air Liquide, Inc.
    Inventors: Xiangyu Guo, James Royer, Venkateswara R. Pallem, Nathan Stafford
  • Patent number: 10607850
    Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.
    Type: Grant
    Filed: December 30, 2016
    Date of Patent: March 31, 2020
    Assignees: American Air Liquide, Inc., Air Liquide Electronics U.S. LP, L'Air Liquide, SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Vijay Surla, Rahul Gupta, Hui Sun, Venkateswara R. Pallem, Nathan Stafford, Fabrizio Marchegiani, Vincent M. Omarjee, James Royer
  • Patent number: 10584052
    Abstract: Disclosed are methods for operating a glass furnace, the method comprises the steps of feeding a non-pre-reformed hydrocarbon fuel gas stream to a pre-reformer forming a pre-reformed hydrocarbon fuel gas stream, feeding the pre-reformed hydrocarbon fuel gas stream to burners of the furnace, combusting oxidant and the pre-reformed hydrocarbon fuel gas with the burners to produce flue gas, heating air through heat exchange with the flue gas at a recuperator, and transferring heat from heated air to pre-reformer tubes of the pre-reformer. A glass furnace system is also disclosed.
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: March 10, 2020
    Assignee: American Air Liquide, Inc.
    Inventors: Taekyu Kang, Robert A. Gagliano, Pavol Pranda, Ashkan Iranshahi
  • Patent number: 10570513
    Abstract: Disclosed are organosilane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed organosilane precursors have the following formula: SiHx(RN—(CR)n—NR)y(NRR)z wherein R may each independently be H, a C1 to C6 alkyl group, or a C3-C20 aryl or heterocycle group, x+y+z=4 and n, x, y and z are integers, provided that x?3 when y=1. Preferably, n=1 to 3, x=0 to 2, y=1 to 2, and z=1 to 3.
    Type: Grant
    Filed: December 10, 2015
    Date of Patent: February 25, 2020
    Assignee: American Air Liquide, Inc.
    Inventors: Glenn Kuchenbeiser, Claudia Fafard
  • Publication number: 20190368728
    Abstract: A radiative recuperator preheats oxidant and/or fuel for combustion at one or more burners of a furnace. The recuperator includes a duct, at least portions of which comprise a material having a thermal conductivity of greater than 1 W/(m·K), preferably greater than 3 W/(m·K), that receives hot flue gas produced by the burner(s). The duct radiatively transfers heat to oxidant or fuel (for preheating) flowing through one or more metallic pipes disposed in between the duct and an insulating wall.
    Type: Application
    Filed: August 16, 2019
    Publication date: December 5, 2019
    Applicants: American Air Liquide, Inc., L'Air Liquide, Societe Anonyme pour l'Etude et l?Exploitation des Procedes Georges Claude
    Inventors: Taekyu KANG, James J.F. MCANDREW, Remi TSIAVA, Jiefu MA, Ryan ADELMAN, Henri CHEVREL
  • Patent number: 10465904
    Abstract: A radiative recuperator preheats oxidant and/or fuel for combustion at one or more burners of a furnace. The recuperator includes a duct, at least portions of which comprise a material having a thermal conductivity of greater than 1 W/(m·K), preferably greater than 3 W/(m·K), that receives hot flue gas produced by the burner(s). The duct radiatively transfers heat to oxidant or fuel (for preheating) flowing through one or more metallic pipes disposed in between the duct and an insulating wall.
    Type: Grant
    Filed: April 6, 2018
    Date of Patent: November 5, 2019
    Assignees: American Air Liquide, Inc., L'Air Liquide Societe Anonyme Pour L'Etude Et L'Exploitation Des Procedes Georges Claude
    Inventors: Taekyu Kang, James J. F. McAndrew, Remi Tsiava, Jiefu Ma, Ryan Adelman, Henri Chevrel
  • Patent number: 10410878
    Abstract: A method for using a hydrofluorocarbon etching compound selected from the group consisting of 2,2,2-Trifluoroethanamine (C2H4F3N), 1,1,2-Trifluoroethan-1-amine (Iso-C2H4F3N), 2,2,3,3,3-Pentafluoropropylamine (C3H4F5N), 1,1,1,3,3-Pentafluoro-2-Propanamine (Iso-C3H4F5N), 1,1,1,3,3-Pentafluoro-(2R)-2-Propanamine (Iso-2R—C3H4F5N) and 1,1,1,3,3-Pentafluoro-(2S)-2-Propanamine (Iso-2S—C3H4F5N), 1,1,1,3,3,3-Hexafluoroisopropylamine (C3H3F6N) and 1,1,2,3,3,3-Hexafluoro-1-Propanamine (Iso-C3H3F6N) to selectively plasma etching silicon containing films, such as a dielectric antireflective coat (DARC) layer (e.g., SiON), alternating SiO/SiN layers, alternating SiO/p-Si layers, versus a photoresist layer and/or a hard mask layer (e.g., amorphous carbon layer), wherein the photoresist layer is reinforced and SiO/SiN and/or SiO/p-Si are etched non-selectively.
    Type: Grant
    Filed: October 31, 2017
    Date of Patent: September 10, 2019
    Assignees: American Air Liquide, Inc., Air Liquide Electronics US. LP, L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Hui Sun, Fabrizio Marchegiani, James Royer, Nathan Stafford, Rahul Gupta
  • Patent number: 10381240
    Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: August 13, 2019
    Assignee: American Air Liquide, Inc.
    Inventors: Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford, Christian Dussarrat
  • Patent number: 10358355
    Abstract: A method for recovery of aluminum hydroxide Al(OH)3 from an aluminum enriched water/wastewater treatment sludge is disclosed. The method includes the steps of: adding a hydrated lime slurry to the aluminum enriched water/wastewater treatment sludge to form an alkaline sludge; adding sodium carbonate Na2CO3 to the alkaline sludge to form a Na2CO3 treated sludge; forming a first supernatant from the Na2CO3 treated sludge of step b) containing NaAl(OH)4; introducing CO2 to the first supernatant to form a precipitate of Al(OH)3 and a second supernatant containing NaHCO3; and recycling at least a portion of the NaHCO3 from the second supernatant back to the alkaline sludge of step a).
    Type: Grant
    Filed: December 14, 2017
    Date of Patent: July 23, 2019
    Assignee: American Air Liquide, Inc.
    Inventors: Rovshan Mahmudov, Sylvester Zuttah
  • Publication number: 20190177402
    Abstract: The invention relates to a method of increasing protein biomolecule production in which a) a cell that produces a heterologous protein biomolecule is cultured, and b) an Additive and/or a source of the Additive is added to the culture medium in an amount sufficient to (i) increase a total yield of the heterologous protein biomolecule secreted into the cell culture media and/or (ii) increase a specific cellular productivity of the heterologous protein biomolecule secreted into the cell culture media.
    Type: Application
    Filed: February 6, 2019
    Publication date: June 13, 2019
    Applicant: American Air Liquide Inc.
    Inventors: Jennifer LEONARDI, Flavio Schwarz, Barbara Chiang, Alice Tseng
  • Patent number: 10280217
    Abstract: The invention relates to a method of increasing protein biomolecule production in which a) a cell that produces a heterologous protein biomolecule is cultured, and b) an Additive and/or a source of the Additive is added to the culture medium in an amount sufficient to (i) increase a total yield of the heterologous protein biomolecule secreted into the cell culture media and/or (ii) increase a specific cellular productivity of the heterologous protein biomolecule secreted into the cell culture media.
    Type: Grant
    Filed: September 19, 2017
    Date of Patent: May 7, 2019
    Assignee: American Air Liquide, Inc.
    Inventors: Jennifer Leonardi, Flavio Schwarz, Barbara Chiang, Alice Tseng
  • Patent number: 10256109
    Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of a nitrogen containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the nitrogen containing etching compound is an organofluorine compound containing at least one C?N or C?N functional group; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated nitrogen containing etching compound capable of etching the silicon-containing film from the substrate.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: April 9, 2019
    Assignee: American Air Liquide, Inc.
    Inventors: Vijay Surla, Rahul Gupta, Venkateswara R. Pallem