Patents Assigned to American Air Liquide, Inc.
  • Publication number: 20190368728
    Abstract: A radiative recuperator preheats oxidant and/or fuel for combustion at one or more burners of a furnace. The recuperator includes a duct, at least portions of which comprise a material having a thermal conductivity of greater than 1 W/(m·K), preferably greater than 3 W/(m·K), that receives hot flue gas produced by the burner(s). The duct radiatively transfers heat to oxidant or fuel (for preheating) flowing through one or more metallic pipes disposed in between the duct and an insulating wall.
    Type: Application
    Filed: August 16, 2019
    Publication date: December 5, 2019
    Applicants: American Air Liquide, Inc., L'Air Liquide, Societe Anonyme pour l'Etude et l?Exploitation des Procedes Georges Claude
    Inventors: Taekyu KANG, James J.F. MCANDREW, Remi TSIAVA, Jiefu MA, Ryan ADELMAN, Henri CHEVREL
  • Patent number: 10465904
    Abstract: A radiative recuperator preheats oxidant and/or fuel for combustion at one or more burners of a furnace. The recuperator includes a duct, at least portions of which comprise a material having a thermal conductivity of greater than 1 W/(m·K), preferably greater than 3 W/(m·K), that receives hot flue gas produced by the burner(s). The duct radiatively transfers heat to oxidant or fuel (for preheating) flowing through one or more metallic pipes disposed in between the duct and an insulating wall.
    Type: Grant
    Filed: April 6, 2018
    Date of Patent: November 5, 2019
    Assignees: American Air Liquide, Inc., L'Air Liquide Societe Anonyme Pour L'Etude Et L'Exploitation Des Procedes Georges Claude
    Inventors: Taekyu Kang, James J. F. McAndrew, Remi Tsiava, Jiefu Ma, Ryan Adelman, Henri Chevrel
  • Patent number: 10410878
    Abstract: A method for using a hydrofluorocarbon etching compound selected from the group consisting of 2,2,2-Trifluoroethanamine (C2H4F3N), 1,1,2-Trifluoroethan-1-amine (Iso-C2H4F3N), 2,2,3,3,3-Pentafluoropropylamine (C3H4F5N), 1,1,1,3,3-Pentafluoro-2-Propanamine (Iso-C3H4F5N), 1,1,1,3,3-Pentafluoro-(2R)-2-Propanamine (Iso-2R—C3H4F5N) and 1,1,1,3,3-Pentafluoro-(2S)-2-Propanamine (Iso-2S—C3H4F5N), 1,1,1,3,3,3-Hexafluoroisopropylamine (C3H3F6N) and 1,1,2,3,3,3-Hexafluoro-1-Propanamine (Iso-C3H3F6N) to selectively plasma etching silicon containing films, such as a dielectric antireflective coat (DARC) layer (e.g., SiON), alternating SiO/SiN layers, alternating SiO/p-Si layers, versus a photoresist layer and/or a hard mask layer (e.g., amorphous carbon layer), wherein the photoresist layer is reinforced and SiO/SiN and/or SiO/p-Si are etched non-selectively.
    Type: Grant
    Filed: October 31, 2017
    Date of Patent: September 10, 2019
    Assignees: American Air Liquide, Inc., Air Liquide Electronics US. LP, L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Hui Sun, Fabrizio Marchegiani, James Royer, Nathan Stafford, Rahul Gupta
  • Patent number: 10381240
    Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: August 13, 2019
    Assignee: American Air Liquide, Inc.
    Inventors: Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford, Christian Dussarrat
  • Patent number: 10358355
    Abstract: A method for recovery of aluminum hydroxide Al(OH)3 from an aluminum enriched water/wastewater treatment sludge is disclosed. The method includes the steps of: adding a hydrated lime slurry to the aluminum enriched water/wastewater treatment sludge to form an alkaline sludge; adding sodium carbonate Na2CO3 to the alkaline sludge to form a Na2CO3 treated sludge; forming a first supernatant from the Na2CO3 treated sludge of step b) containing NaAl(OH)4; introducing CO2 to the first supernatant to form a precipitate of Al(OH)3 and a second supernatant containing NaHCO3; and recycling at least a portion of the NaHCO3 from the second supernatant back to the alkaline sludge of step a).
    Type: Grant
    Filed: December 14, 2017
    Date of Patent: July 23, 2019
    Assignee: American Air Liquide, Inc.
    Inventors: Rovshan Mahmudov, Sylvester Zuttah
  • Publication number: 20190177402
    Abstract: The invention relates to a method of increasing protein biomolecule production in which a) a cell that produces a heterologous protein biomolecule is cultured, and b) an Additive and/or a source of the Additive is added to the culture medium in an amount sufficient to (i) increase a total yield of the heterologous protein biomolecule secreted into the cell culture media and/or (ii) increase a specific cellular productivity of the heterologous protein biomolecule secreted into the cell culture media.
    Type: Application
    Filed: February 6, 2019
    Publication date: June 13, 2019
    Applicant: American Air Liquide Inc.
    Inventors: Jennifer LEONARDI, Flavio Schwarz, Barbara Chiang, Alice Tseng
  • Patent number: 10280217
    Abstract: The invention relates to a method of increasing protein biomolecule production in which a) a cell that produces a heterologous protein biomolecule is cultured, and b) an Additive and/or a source of the Additive is added to the culture medium in an amount sufficient to (i) increase a total yield of the heterologous protein biomolecule secreted into the cell culture media and/or (ii) increase a specific cellular productivity of the heterologous protein biomolecule secreted into the cell culture media.
    Type: Grant
    Filed: September 19, 2017
    Date of Patent: May 7, 2019
    Assignee: American Air Liquide, Inc.
    Inventors: Jennifer Leonardi, Flavio Schwarz, Barbara Chiang, Alice Tseng
  • Patent number: 10256109
    Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of a nitrogen containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the nitrogen containing etching compound is an organofluorine compound containing at least one C?N or C?N functional group; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated nitrogen containing etching compound capable of etching the silicon-containing film from the substrate.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: April 9, 2019
    Assignee: American Air Liquide, Inc.
    Inventors: Vijay Surla, Rahul Gupta, Venkateswara R. Pallem
  • Publication number: 20190085060
    Abstract: The invention relates to a method of increasing protein biomolecule production in which a) a cell that produces a heterologous protein biomolecule is cultured, and b) an Additive and/or a source of the Additive is added to the culture medium in an amount sufficient to (i) increase a total yield of the heterologous protein biomolecule secreted into the cell culture media and/or (ii) increase a specific cellular productivity of the heterologous protein biomolecule secreted into the cell culture media.
    Type: Application
    Filed: September 19, 2017
    Publication date: March 21, 2019
    Applicant: American Air Liquide Inc.
    Inventors: Jennifer LEONARDI, Flavio SCHWARZ, Barbara CHIANG, Alice TSENG
  • Patent number: 10222061
    Abstract: Methods, burner, apparatuses, and systems are provided for controlling a velocity of a jet of gas exiting a burner when the gas is heated or not and at a corresponding second higher temperature or lower first temperature. Through the use of a temperature-sensitive magnetic valve, the flow of a gas can be redirected to maintain velocity of the gas as delivered to a combustion chamber based on the temperature of the gas. The temperature-sensitive magnetic valve can redirect flow of the gas based on the magnetic state of a ferromagnetic material. The state of the temperature-sensitive magnetic valve changes based on the temperature of the gas to maintain the velocity of the gas delivered through an outlet of the burner to the combustion chamber. Thus, heated gases and standard temperature gases can be delivered at approximately equal velocities thus maintaining flame size and shape.
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: March 5, 2019
    Assignee: American Air Liquide, Inc.
    Inventors: Taekyu Kang, Robert Sokola, Vijaykant Sadasivuni, Hwanho Kim
  • Patent number: 10217681
    Abstract: Silicon nitride plasma etching processes are disclosed that minimize the SiN roughness layer on a substrate having a SiN layer thereon by simultaneously introducing an oxidizer at a predetermined flow rate and an etch gas into a plasma reaction chamber containing the substrate. The etch gas has the formula CxHyFz, wherein x is 2-5, z is 1 or 2, 2x+2=y+z, and a fluorine atom is located on a terminal carbon atom of the etch gas.
    Type: Grant
    Filed: April 23, 2015
    Date of Patent: February 26, 2019
    Assignee: American Air Liquide, Inc.
    Inventors: James Royer, Venkateswara R. Pallem, Rahul Gupta
  • Publication number: 20190003706
    Abstract: A radiative recuperator preheats oxidant and/or fuel for combustion at one or more burners of a furnace. The recuperator includes a duct, at least portions of which comprise a material having a thermal conductivity of greater than 1 W/(m·K), preferably greater than 3 W/(m·K), that receives hot flue gas produced by the burner(s). The duct radiatively transfers heat to oxidant or fuel (for preheating) flowing through one or more metallic pipes disposed in between the duct and an insulating wall.
    Type: Application
    Filed: April 6, 2018
    Publication date: January 3, 2019
    Applicants: American Air Liquide, Inc., L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
    Inventors: Taekyu KANG, James J.F. MCANDREW, Remi TSIAVA, Jiefu MA, Ryan ADELMAN, Henri CHEVREL
  • Patent number: 10115600
    Abstract: Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The plasma etching compounds may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.
    Type: Grant
    Filed: August 24, 2017
    Date of Patent: October 30, 2018
    Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.
    Inventors: Rahul Gupta, Venkateswara R. Pallem, Vijay Surla, Curtis Anderson, Nathan Stafford
  • Patent number: 10103031
    Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: October 16, 2018
    Assignees: L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Georges Claude, American Air Liquide, Inc., Air Liquide Electronics U.S. LP
    Inventors: Peng Shen, Christian Dussarrat, Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford
  • Patent number: 10053775
    Abstract: Methods of using Si-containing film forming compositions to deposit silicon-containing films using vapor deposition processes are disclosed. The disclosed Si-containing film forming composition comprises an amino(bromo)silane precursor having the formula: SiHxBry(NR1R2)4?x?y wherein x=0, 1 or 2; y=1, 2 or 3; x+y<4; each R1 and R2 is independently selected from C1-C6 alkyl, aryl, or hetero group; and R1 and R2 may be joined to form a cyclic nitrogen-containing heterocycle. The disclosed Si-containing film forming compositions include an amino(bromo)silane precursor selected from the group consisting of SiH2Br(NEt2), SiH2Br(N(iPr)2), SiH2Br(N(iBu)2) and SiBr(NMe2)3.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: August 21, 2018
    Assignees: L'Air Liquide, Societé Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.
    Inventors: Glenn Kuchenbeiser, Venkateswara R. Pallem, Nicolas Blasco, Jean-Marc Girard
  • Publication number: 20180215641
    Abstract: Disclosed are methods for operating a glass furnace, the method comprises the steps of feeding a non-pre-reformed hydrocarbon fuel gas stream to a pre-reformer forming a pre-reformed hydrocarbon fuel gas stream, feeding the pre-reformed hydrocarbon fuel gas stream to burners of the furnace, combusting oxidant and the pre-reformed hydrocarbon fuel gas with the burners to produce flue gas, heating air through heat exchange with the flue gas at a recuperator, and transferring heat from heated air to pre-reformer tubes of the pre-reformer. A glass furnace system is also disclosed.
    Type: Application
    Filed: January 27, 2017
    Publication date: August 2, 2018
    Applicant: American Air Liquide, Inc.
    Inventors: Taekyu KANG, Robert A. GAGLIANO, Pavol PRANDA, Ashkan IRANSHAHI
  • Patent number: 10006122
    Abstract: Disclosed are Si-containing film forming composition comprising organodisilane precursors. The organodisilane precursors have the formula (E-(CR)n-E)SiH2—SiHx(E-(CR)n-E)3-x, wherein x is 2 or 3; each n is independently 1 or 3; each (E-(CR)n-E) group is a monoanionic bidentate ligand bonding to the Si through each E; each E is independently chosen from NR, O or S; and each R is independently selected from the group consisting of H, a C1 to C6 alkyl group, and a C3-C20 aryl or heterocycle group. Also disclosed are methods of synthesizing the Si-containing film forming compositions and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: June 26, 2018
    Assignee: American Air Liquide, Inc.
    Inventors: Guillaume Husson, Glenn Kuchenbeiser, Venkateswara R. Pallem
  • Patent number: 9969756
    Abstract: Disclosed are Si-containing film forming compositions comprising carbosilane substituted amine precursors. The carbosilane substituted amine precursors have the formula (R1)aN(—SiHR2—CH2—SiH2R3)3?a, wherein a=0 or 1; R1 is H, a C1 to C6 alkyl group, or a halogen; R2 and R3 is each independently H; a halogen; an alkoxy group having the formula OR?, wherein R? is an alkyl group (C1 to C6); or an alkylamino group having the formula NR?2, wherein each R? is independently H, a C1-C6 alkyl group, a C1-C6 alkenyl group, or a C3-C10 aryl or heterocycle group. Also disclosed are methods of synthesizing the carbosilane substituted amine precursors and their use for deposition processes.
    Type: Grant
    Filed: September 23, 2015
    Date of Patent: May 15, 2018
    Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés George Claude, American Air Liquide, Inc.
    Inventors: Claudia Fafard, Venkateswara R. Pallem, Jean-Marc Girard
  • Patent number: 9938303
    Abstract: Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.
    Type: Grant
    Filed: July 19, 2013
    Date of Patent: April 10, 2018
    Assignee: American Air Liquide, Inc.
    Inventors: Christian Dussarrat, Glenn Kuchenbeiser, Venkateswara R. Pallem
  • Patent number: 9892932
    Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1 ?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.
    Type: Grant
    Filed: June 17, 2015
    Date of Patent: February 13, 2018
    Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc., Air Liquide Electronics U.S. LP
    Inventors: Peng Shen, Christian Dussarrat, Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford