Abstract: A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of a nitrogen containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the nitrogen containing etching compound is an organofluorine compound containing at least one C?N or C?N functional group; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated nitrogen containing etching compound capable of etching the silicon-containing film from the substrate.

Abstract: Methods, burner, apparatuses, and systems are provided for controlling a velocity of a jet of gas exiting a burner when the gas is heated or not and at a corresponding second higher temperature or lower first temperature. Through the use of a temperature-sensitive magnetic valve, the flow of a gas can be redirected to maintain velocity of the gas as delivered to a combustion chamber based on the temperature of the gas. The temperature-sensitive magnetic valve can redirect flow of the gas based on the magnetic state of a ferromagnetic material. The state of the temperature-sensitive magnetic valve changes based on the temperature of the gas to maintain the velocity of the gas delivered through an outlet of the burner to the combustion chamber. Thus, heated gases and standard temperature gases can be delivered at approximately equal velocities thus maintaining flame size and shape.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1 ?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Abstract: A plurality of independently flow rate-controlled flows of fuel may be preheated at a heat exchanger (or both oxidant and fuel at separate heat exchangers) by heat exchange with a hot shell-side (heat transfer) fluid. The separate flows of hot fuel are directed to associated separate burners where they combust with flows of fuel to produce hot combustion gases. The hot combustion gases are used to preheat the hot shell-side fluid at a recuperator or regenerator.

Abstract: Methods, burner, apparatuses, and systems are provided for controlling a velocity of a jet of gas exiting a burner when the gas is heated or not and at a corresponding second higher temperature or lower first temperature. Through the use of a temperature-sensitive magnetic valve, the flow of a gas can be redirected to maintain velocity of the gas as delivered to a combustion chamber based on the temperature of the gas. The temperature-sensitive magnetic valve can redirect flow of the gas based on the magnetic state of a ferromagnetic material. The state of the temperature-sensitive magnetic valve changes based on the temperature of the gas to maintain the velocity of the gas delivered through an outlet of the burner to the combustion chamber. Thus, heated gases and standard temperature gases can be delivered at approximately equal velocities thus maintaining flame size and shape.

Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Abstract: Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The plasma etching compounds may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Abstract: Disclosed are sulfur containing organosilane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics. The disclosed precursors have the following formula: wherein L1 is a sulfur atom and L2 may be chosen from a sulfur atom, an oxygen atom, or a nitrogen atom; L1 and L2 are joined together via a carbon bridge having one to three carbon atoms; and L1, L2 and the carbon bridge form a monoanionic ligand bonded to silicon.

Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.

Abstract: Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.

Abstract: A burner has a fuel/oxidant nozzles and a pair of dynamical lances spaced on either side thereof that inject a jet of fuel and primary oxidant along a fuel injection axis, and jets of secondary oxidant, respectively. Jets of actuating fluid impinge against the jets of secondary oxidant to fluidically angle the jets of secondary oxidant away from the fuel injection axis. The action of the angling away together with staging of the oxidant between primary and secondary oxidant injections allows achievement of distributed combustion conditions.

Abstract: Embodiments of the invention provide a condition-based maintenance tool that may be used to monitor, configure, and in some cases correct, problems experienced by a compressor in a pipeline system. The condition-based maintenance tool may evaluate data retrieved from a compressor status database to identify overconsumption events. In response, the maintenance tool may generate maintenance alarms, initiate work orders, and/or provide recommendations for action to an operator.

Abstract: The present invention is a cryogenic subterranean fracturing fluid, comprising a liquefied industrial gas and a viscosity increasing additive. The liquefied industrial gas may be liquefied carbon dioxide, liquefied nitrogen, or a blend of the two. The liquefied industrial gas mixture should be substantially free of water. In this context, substantially free of water means less than 10% water by volume, or preferably less than 5% water by volume. In addition to the viscosity increasing additive, a proppant may be added to the fracturing fluid. In addition to the viscosity increasing additive and/or proppant additional additives may be added to the liquefied industrial gas as required.

Abstract: Disclosed are homoleptic diazabutadiene nickel precursors used for the vapor deposition of nickel-containing films. The precursors have the general formula Ni(R-DAD)2, wherein R-DAD stands for substituted 1,4-diazabuta-1,3-diene ligands. The sole presence of the Ni—N bonds was also considered to avoid too high intrusion of other elements, such as carbon, into the nickel-containing films. The flexibility of the Ni—N bond in terms of film deposition also allows using the molecules for nickel, nickel-nitride, nickel-carbonitride, nickel oxide or any other type of nickel-containing films. The nickel-containing film depositions can be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD or any other type of depositions methods.

Abstract: Disclosed are processes for the use of bis-ketoiminate copper precursors for the deposition of copper-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).

Abstract: Methods and compositions for depositing a metal containing thin film on a substrate comprises introducing a vapor phase metal-organic precursor into a reaction chamber containing one or more substrates. The precursor has at least one ?-diketiminato ligand, and has the general formula: M(R1C(NR4)CR2C(NR5)R3)2Ln wherein M is a metal selected from nickel, cobalt, ruthenium, iridium, palladium, platinum, silver and gold. Each of R1-5 is an organic ligand independently selected from H; and a C1-C4 linear or branched, alky group, alkylsilyl group, alkylamide group, alkoxide group, or alkylsilylamide group. Each L is independently selected from: a hydrocarbon; an oxygen-containing hydrocarbon; an amine; a polyamine; a bipyridine; an oxygen containing heterocycle; a nitrogen containing heterocycle; and combinations thereof; and n is an integer ranging from 0 to 4, inclusive. A metal containing film is deposited onto the substrate, while the substrate is maintained at a temperature between about 100° C.

Abstract: The invention may be broadly defined as the addition of Argon to FFPE procedures as an RNA stabilizing agent. Argon is an inert gas from the Noble gas group with low saturation concentrations in water. It is therefore highly surprising that Argon would have any effect on RNA stability in the presence of Formalin, or any other chemical. This property of Argon appears to be specific in that other inert gases fail to show any RNA stabilizing effect.

Abstract: Disclosed are hafnium-containing and zirconium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit hafnium, zirconium, hafnium oxide, and zirconium oxide containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.

Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.

Abstract: Si(OEt)2[CH2—Si(OEt)3]2 compounds are synthesized by reacting a Grignard reagent having the formula Si(OEt)3(CH2MgCl) with a quenching agent having the formula Si(OEt)2Cl2.