Abstract: Example embodiments relate to RF amplifier packages. One example RF amplifier package includes an input terminal, an output terminal, a substrate, a first DC blocking capacitor having a first terminal and a grounded second terminal, and a second conductor die mounted on the substrate. The semiconductor die includes a semiconductor substrate, an RE power field-effect transistor (FET) integrated on the semiconductor substrate, a gate bondbar, a first drain bondbar, a second drain bondbar, and a plurality of first bondwires connecting the second drain bondbar to the first terminal of the first DC blocking capacitor. The RF power FET includes a plurality of gate fingers that are electrically connected to the gate bondbar and that each extend from the gate bondbar towards the first drain bondbar and underneath the second drain bondbar, a first set of drain fingers, and a second set of drain fingers.

Abstract: Example embodiments relate to packaged electronic devices. One example packaged electronic device includes a substrate. The packaged electronic device also includes a plurality of leads fixated relative to the substrate in a spaced apart manner. Additionally, the packaged electronic device includes a solidified molding compound that is fixedly connected to the plurality of leads. The solidified molding includes an upper ring part that extends away from the leads in a direction away from the substrate. Further, the packaged electronic device includes an electronic component mounted on the substrate and electrically connected to the leads. In addition, the packaged electronic device includes a lid having a lid base and a lid rim that extends towards the upper ring part. The lid rim is connected to the upper ring part using an adhesive. Each of the lid rim and upper ring part include an inner portion and an outer portion.

Abstract: Example embodiments relate to an electronic package, to an electronic device comprising such a package, and to a lead frame for manufacturing the electronic package. Some examples may particularly relate to electronic packages in which radiofrequency (RF) circuitry is arranged. According to the example embodiments, a width of the clamping portion is substantially larger than the width of the lead end portion, the width of the clamping portion being chosen such that bending of the inner part and/or body part relative to the outer part during the application of the molding compound was substantially prevented thereby having avoided flash and/or bleed of molding compound onto the inner part.

Abstract: Example embodiments relate to power amplifiers with decreased RF return current losses. One embodiment includes a RF power amplifier package that includes a semiconductor die, an input lead, first bondwire connections, second bondwire connections, and a plurality of shields. The semiconductor die includes an RF power transistor that includes output bond pads, input bond pads, a plurality of input fingers, and a plurality of output fingers. Further, each shield of the plurality of shields is arranged in between a respective input finger of the plurality of input fingers and a respective output finger of the plurality of output fingers and extending along with said respective input finger and output finger. In addition, each shield of the plurality of shields is connected to a ground terminal of the RF power transistor. The input fingers, output fingers, and shields are formed using a metal layer stack of multiple metal layers.

Abstract: Example embodiments relate to wireless synchronization for multi-channel RE heating and drying devices. One embodiment includes a multi-channel RF device. The RE device includes a cavity. The RF device also includes a first channel configured to generate a first RF signal and to transmit the first RE signal into the cavity. In addition, the RE device includes a second channel spaced apart and electrically isolated from the first channel. The second channel is configured to wirelessly receive the first RE signal transmitted by the first channel. The second channel is also configured to extract a frequency of the first RE signal from the received first RE signal. In addition, the second channel is configured to generate, based on the extracted frequency, a second RE signal. Further, the second channel is configured to transmit the second RE signal into the cavity.

Abstract: The present disclosure relates to a molded radiofrequency, ‘RF’, power package. The present disclosure further relates to a method for manufacturing such package. According to example embodiments, weakening structures are provided in the leads to allow the leads to be bent without causing delamination in the body of solidified molding compound.

Abstract: Example embodiments relate to push-pull class E amplifiers. One example push-pull class E amplifier includes an input configured for receiving a signal to be amplified. The push-pull class E amplifier also includes an output configured for outputting the signal after amplification. Additionally, the push-pull class E amplifier includes a printed circuit board having a first dielectric layer and a second dielectric layer. Further, the push-pull class E amplifier includes a first amplifying unit and a second amplifying unit. Yet further, the push-pull class E amplifier includes a balun, a capacitive unit, a first line segment, a second line segment, a third line segment, and a fourth line segment. The first line segment and the second line segment are arranged on the first dielectric layer. A combined length of the third line segment and the fourth line segment corresponds to a quarter wavelength of an operational frequency of the amplifier.

Abstract: The present invention relates to a molded air-cavity package. In addition, the present invention is related to a device comprising the same. The present invention is particularly related to molded air-cavity packages for radio-frequency ‘RF’ applications including but not limited to RF power amplifiers. Instead of using hard-stop features that are arranged around the entire perimeter of the package in a continuous manner, the present invention proposes to use spaced apart pillars formed by first and second cover supporting elements. By using only a limited amount of pillars, e.g. three or four, the position of the cover relative to the body can be defined in a more predictable manner. This particularly holds if the pillars are arranged in the outer corners of the package.

Abstract: Example embodiments relate to amplifiers having improved stability.

Abstract: The present invention relates to an electrical component. The present invention further relates to an electrical device comprising such an electrical component and to a flat no-lead package. According to the invention, the flat no-lead package comprises a semiconductor die comprising electrical circuitry that has a plurality of terminals for inputting and outputting one or more signals, a thermal pad on which the semiconductor die is mounted, a plurality of leads arranged spaced apart from the thermal pad, and a plurality of further leads that are integrally connected to the thermal pad. One or more terminals among the plurality of terminals are each connected to a respective lead, and one or more terminals among the plurality of terminals are each connected to a respective further lead.

Abstract: The present invention relates to an amplifying device and to an amplifying system comprising the same. According to the present invention, an amplifier line-up is presented comprising four amplifying units which is operable in a Doherty mode and an outphasing mode. By integration of Chireix compensating elements in the matching networks used in the amplifying units a bandwidth improvement can be obtained.

Abstract: An example embodiment relates to a radiofrequency (RF) power amplifier pallet, and further relates to an electronic device that includes such a pallet. The RF power amplifier pallet may include a coupled line coupler that includes a first line segment and a second line segment that is electromagnetically coupled to the first line segment. A first end of the first line segment may be electrically connected to an output of an RF amplifying unit. The RF power amplifier pallet may further include a dielectric filled waveguide having an end section of the first dielectric substrate, an end section of the second dielectric substrate, and a plurality of metal wall segments covering the end sections of the first and second dielectric layers. The plurality of metal wall segments may be arranged spaced apart from the first line segment and electrically connected to a first end of the second line segment.

Abstract: At least one embodiment relates to a radio-frequency (RF) power amplifier system for amplifying a first RF signal. The RF power amplifier system includes a RF power amplifier being configured to amplify a second RF signal. The RF power amplifier system also includes a control loop for controlling a power level of the second RF signal. The control loop includes a RF output power determining unit for determining a power level of the amplified second RF signal. The control loop also includes a gain determining unit for determining an actual large signal gain based on the determined power level of the amplified second RF signal and a power level of the second RF signal. Further, the control loop includes an attenuator for attenuating the first RF signal and for providing the attenuated first RF signal to the RF power amplifier as the second RF signal.

Abstract: An impedance control unit is disclosed. Also disclosed are a balun unit, an electronic device, and a Doherty amplifier, each comprising the impedance control unit. The impedance control unit comprises a pair of re-entrant type coupled lines, and further comprises an electrical short between the intermediate plane and the ground plane arranged locally inside the pair of coupled lines.

Abstract: The present invention relates to an electrical component. The present invention further relates to an electrical device comprising such an electrical component and to a flat no-lead package. According to the invention, the flat no-lead package comprises a semiconductor die comprising electrical circuitry that has a plurality of terminals for inputting and outputting one or more signals, a thermal pad on which the semiconductor die is mounted, a plurality of leads arranged spaced apart from the thermal pad, and a plurality of further leads that are integrally connected to the thermal pad. One or more terminals among the plurality of terminals are each connected to a respective lead, and one or more terminals among the plurality of terminals are each connected to a respective further lead.

Abstract: The present invention relates to an amplifying device and to an amplifying system comprising the same. According to the present invention, an amplifier line-up is presented comprising four amplifying units which is operable in a Doherty mode and an outphasing mode. By integration of Chireix compensating elements in the matching networks used in the amplifying units a bandwidth improvement can be obtained.

Abstract: The present disclosure relates to a packaged radiofrequency (RF) power amplifier. The present disclosure further relates to a semiconductor die that is used in such a power amplifier and to an electronic device or system that comprises the semiconductor die and/or power amplifier. According to the disclosure, the semiconductor die comprises a second drain bond assembly arranged spaced apart from the first drain bond assembly and electrically connected thereto, wherein the second drain bond assembly is arranged closer to the input side of the semiconductor die than the first drain bond assembly. The RF power amplifier comprises a first plurality of bondwires which extend between the first drain bond assembly and the output lead, and a second plurality of bondwires which extend from the second drain bond assembly to a first terminal of a grounded capacitor.

Abstract: A packaged RF power amplifier comprises an output network coupled to the output of a RF power transistor, which output network comprises a plurality of first bondwires extending along a first direction between the output of transistor and an output lead of the package, a series connection of a second inductor and a first capacitor between the output of the RF power transistor and ground, and a series connection of a third inductor and a second capacitor connected in between ground and the junction between the second inductor and the first capacitor. The first and second capacitors are integrated on a single passive die and the third inductor comprises a first part and a second part connected in series, wherein the first part extends at least partially along the first direction, and wherein the second part extends at least partially in a direction opposite to the first direction.

Abstract: The present invention relates to a four-way Doherty amplifier. The invention further relates to a mobile telecommunications base station. The invention proposes a new Doherty combiner topology that allows peak efficiencies to be reached at deeper back-off levels than conventional Doherty combiners.

Abstract: An integrated circuit package is provided. The integrated circuit package comprises a first and second guard bond wire. The first guard bond wire has a first and second end coupled to ground. The second guard bond wire has a first and second end coupled to ground. The integrated circuit package further comprises a die. The die is mounted between the first and second guard bond wires such that the first and second guard bond wires distort a magnetic field between at least an input terminal and an output terminal of the die.