Abstract: An optical element for introducing a predetermined phase delay into incident electromagnetic radiation. The optical element comprises a first layer and a second layer arranged in a propagation path of a portion of the electromagnetic radiation. The first layer comprises a transmission regions configured to introduce a first phase delay into the portion of electromagnetic radiation propagating therethrough. The second layer comprises a metasurface configured to introduce a second phase delay into the portion of electromagnetic radiation propagating therethrough. The metasurface comprises subwavelength sized structures.

Abstract: A method is proposed of producing a semiconductor body with a trench. The semiconductor body comprises a substrate. The method comprising the step of etching the trench into the substrate using an etching mask. An oxide layer is formed at least on a sidewall of the trench by oxidation of the substrate. A passivation layer is formed on the oxide layer and the bottom of the trench. The passivation layer is removed from the bottom of the trench. Finally, a metallization layer is deposited into the trench.

Abstract: An apparatus for sensing particulate matter in a fluid includes a fluid flow conduit fluidically connected to an interaction chamber; a light source positioned to illuminate the interaction chamber; and a light detector assembly positioned to receive light scattered by particulate matter present in the interaction chamber. The light detector assembly includes a light detector; and an optical element, the optical element configured to provide light to the light detector based on an incidence angle of the scattered light.

Abstract: In one embodiment a temperature sensor has a first sensing unit operable to provide a first pseudo-differential unipolar analog signal representing a first temperature value of a power unit, an interface circuit operable to provide a second pseudo-differential unipolar analog signal representing a second temperature value of a powered unit, a multiplexer circuit which is operable to provide a pseudo-differential unipolar multiplexed analog signal comprising the first analog signal or the second analog signal, and a first analog-to-digital converter, ADC, component operable to provide a first digital signal from the multiplexed analog signal, the first digital signal comprising a digital representation of the first analog signal or the second analog signal. Therein, the operation of the first ADC component is synchronized with a control signal designed for activating the power unit.

Abstract: A sensing system comprising a measurement sensor configured to detect electromagnetic radiation and a reference sensor configured to detect a source of measurement uncertainty. The sensing system further comprises a shield configured to reduce an interaction between the electromagnetic radiation and the reference sensor.

Abstract: A semiconductor device comprises a substrate body with a surface, a conductor comprising a conductor material covering at least part of the surface, and a dielectric that is arranged on a part of the surface that is not covered by the conductor. Therein, the conductor is in contact with the substrate body, the conductor and the dielectric form a layer, and a bonding surface of the layer has surface topographies of less than 10 nm, with the bonding surface facing away from the substrate body. Moreover, the semiconductor device is free of a diffusion barrier.

Abstract: Modulated light is generated using a light source of a sensor module. Using a photodetector of the sensor module, an intensity of modulated light reflected from an object towards the photo detector is measured over a period of time. An electronic control device bins the measured intensity of the reflected modulated light according to a plurality of temporal bins, determines a first temporal bin having the greatest intensity among the plurality of temporal bins, and estimates a distance between the sensor module and the object based on a first temporal bin, and one or more additional temporal bins of the plurality of temporal bins.

Abstract: An optical device includes an emitter operable to emit a first light wave. The optical device also includes a detector operable to detect a second light wave that is based on the first light wave. The second light wave is susceptible to being coupled with an undesired light wave that is based on the first light wave. The optical device further includes an interference filter disposed on the detector. The interference filter includes a first filter portion and a second filter portion having a first set of layers formed from a first material and a second set of layers formed from a second, different material. The interference filter is operable to attenuate undesired light waves in multiple distinct environments based on the first and second sets of layers in the second filter portion.

Abstract: A sensor device is provided and includes an array of photodetectors. A readout circuit is connected to the array of photodetectors and provides dedicated readout paths for each photodetector in the array, respectively. Further, the readout circuit includes at least one control terminal. An array of time-to-digital converters is electrically connected to converter output terminals of the readout circuit. Depending on a control signal to be applied at the at least one control terminal, the readout circuit is arranged to electrically connect through the readout paths of photodetectors of a first subarray (11) to the converter output terminals of the readout circuit, respectively, thereby rendering the photodetectors of the first subarray active and photodetectors of a second subarray inactive.

Abstract: A method for starting a system-on-a-chip, SoC, without read only memory, ROM, comprises the steps of receiving, by a processor comprised by the SoC, a reset signal, monitoring, by a monitoring component comprised by the SoC, a connection between the processor and at least a non-volatile memory, both comprised by the SoC, upon occurrence of a first read access of the processor to the non-volatile memory via the connection checking, by the monitoring component, whether a data value returned in response to the first read access via the connection conforms to a pre-set value, and if the returned data value differs from the pre-set value, stopping, by the monitoring component, operation of the processor.

Abstract: An optoelectronic device comprises a substrate with a photosensitive structure, a dielectric layer on a main surface of the substrate, the dielectric layer having a top surface facing away from the substrate. At least one wiring layer is arranged in the dielectric layer in places and at least one contact area is formed by a portion of the at least one wiring layer. An opening is formed at the top surface of the dielectric layer, the opening extending towards the contact area. An optical element is arranged on the top surface of the dielectric layer above the photosensitive structure and an optical filter is arranged on the top surface of the dielectric layer, the optical filter being electrically conductive, covering a portion of the optical element and being in electrical contact with the contact area. Furthermore, a method for producing an optoelectronic device is provided.

Abstract: An open through-substrate via, TSV, comprises an insulation layer disposed adjacent to at least a portion of side walls of a trench and to a surface of a substrate body. The TSV further comprises a metallization layer disposed adjacent to at least a portion of the insulation layer and to at least a portion of a bottom wall of said trench, a redistribution layer disposed adjacent to at least a portion of the metallization layer and a portion of the insulation layer disposed adjacent to the surface, and a capping layer disposed adjacent to at least a portion of the metallization layer and to at least a portion of the redistribution layer. The insulation layer and/or the capping layer comprise sublayers that are distinct from each other in terms of material properties. A first of the sublayers is disposed adjacent to at least a portion of the side walls and to at least a portion of the surface and a second of the sublayers is disposed adjacent to at least a portion of the surface.

Abstract: Forming a three-dimensional structure includes applying photoresist on a layer and using a photolithography system to expose the photoresist. The photolithography system includes a photomask having a pattern thereon, where the pattern provides varying pattern density across a surface of the photomask and has a pitch that is less than a resolution of the photolithography system. The method includes subsequently developing the photoresist such that photoresist remaining on the layer has a three-dimensional profile defined by the photomask. An isotropic etchant is used to etch the layer such that the three-dimensional profile of the photoresist is transferred to the layer.

Abstract: An apparatus for detecting objects comprises an optical interferometer that is configured to receive electromagnetic radiation from a light source, and emit electromagnetic radiation to a detector. The optical interferometer is coupled to an environment and further configured to respond to objects in the environment intruding into an interaction volume of the optical interferometer by varying an intensity of the electromagnetic radiation emitted to the detector based on a property of the objects in the interaction volume. A signal processor is configured to generate an output signal based on the intensity of the electromagnetic radiation emitted to the detector.

Abstract: A transconductor circuitry (10) with adaptive biasing comprises a first input terminal (E10a) to apply a first input signal (inp), and a second input terminal (E10b) to apply a second input signal (inn). A control circuit (200) is configured to control a first controllable current source (110) in a first current path (101) and a second controllable current source (120) in a second current path (102) in response to at least one of a first potential of a first node (N1) of the first current path (101) and a second potential of a second node (N2) of the second current path (102). The first node (N1) is located between a first transistor (150) and the first controllable current source (110), and the second node (N2) is located between a second transistor (160) and the second controllable current source (120).

Abstract: A method of manufacturing an optical sensor arrangement including the steps of providing a substrate having a surface and providing an integrated circuit comprising an optical detector arranged for detecting light of a desired wavelength range. The integrated circuit and a light emitter are mounted onto the surface, wherein the light emitter is arranged for emitting light in the desired wavelength range. The integrated circuit and the light emitter are electrically connected to each other and to the substrate. A light barrier is formed between the optical detector and the light emitter by dispensing a first optically opaque material along a profile of the integrated circuit. A mold layer is formed by at least partly encapsulating the substrate, the integrated circuit and the light emitter with an optically transparent material. A casing, made from a second optically opaque material, is mounted on the light barrier and thereby encloses a hollow space between the casing and the mold layer.

Abstract: We disclose herein a method of compressing data for data transfer within an electronic device. The method comprises: receiving, at a first processing member of the electronic device, a plurality of data samples produced by a member of the electronic device, wherein the data samples comprise numerical bits; restructuring, by the first processing member, the plurality of data samples into a plurality of data packets; labelling each data packet with a sample indicator bit to indicate a plurality of groups across the plurality of data packets; transferring a bit stream comprising at least some of the plurality of data packets across an interface of the electronic device to a receiving member of the electronic device; and decoding the bit stream, by a second processing member of the electronic device, to obtain at least some of the plurality of the data samples, the decoding being based at least in part on the sample indicator bits.

Abstract: A semiconductor body comprises a buried layer of a first type of conductivity, a first region of the first type of conductivity, a shallow region of a second type of conductivity at a first surface of the semiconductor body, a sinker of the first type of conductivity located at the first surface of the semiconductor body, and a separating region of the first type of conductivity encircling at least one of the sinker and the buried layer. The first region is between the buried layer and the shallow region.

Abstract: An intermetal dielectric and metal layers embedded in the intermetal dielectric are arranged on a substrate of semiconductor material. A via hole is formed in the substrate, and a metallization contacting a contact area of one of the metal layers is applied in the via hole. The metallization, the metal layer comprising the contact area and the intermetal dielectric are partially removed at the bottom of the via hole in order to form a hole penetrating the intermetal dielectric and extending the via hole. A continuous passivation is arranged on sidewalls within the via hole and the hole, and the metallization contacts the contact area around the hole. Thus the presence of a thin membrane of layers, which is usually formed at the bottom of a hollow through-substrate via, is avoided.

Abstract: A method of sensing a level of ambient light in an electronic device comprising sensing a combined light level of ambient light and light from the display, integrating this to determine an integrated light level, determining an integrated display light level, and compensating the integrated light level using the integrated display light level to determine the ambient light level. The device modulates the display between first and second brightness levels and determining the integrated display light level comprises sensing a combination of light from the display and ambient light when at each of the first and second brightness levels, determining a difference, and applying a calibration value to the difference to determine the integrated display light level.