Abstract: Structured light projection system includes an array of light emitting devices, which is configured to emit a pattern of light. A projection lens is configured to receive and project the pattern of light from the array to a first optical element. The first optical element alters the pattern of light to generate a first emitted pattern of light that is irregular. The first emitted pattern of light is transmitted to a second optical element that is configured to receive the first pattern of light and reproduce the first emitted pattern along a second emitted pattern, which comprises multiple instances of the first emitted pattern arranged in a tiled pattern.

Abstract: An apparatus includes an optoelectronic component mounted to a PCB substrate. A transmissive adhesive is disposed directly on the optoelectronic component and is transmissive to light of a wavelength sensed by, or emitted by, the optoelectronic component. The apparatus includes an optical filter disposed directly on the transmissive adhesive. An epoxy laterally surrounds and is in contact with side surfaces of the transmissive adhesive and the optical filter. The epoxy is non-transmissive to light of a wavelength sensed by, or emitted by, the optoelectronic component. In some cases, the epoxy defines a recess directly over the optical filter to accommodate an optical component, such as an optical diffuser. Methods of fabricating the modules are disclosed as well.

Abstract: Testing apparatus operable to collect optical performance data of optoelectronic devices at different temperatures includes thermal-adjustment devices in thermal and mechanical contact with the optoelectronic devices via optoelectronic device stages. The thermal-adjustment devices can direct thermal energy to the optoelectronic devices under test without heating test targets in close proximity. Consequently, in some instances, spurious results can be avoided and rapid measurement of the optoelectronic devices different temperatures can be achieved.

Abstract: A method of forming a wafer stack includes providing a sub-stack comprising a first wafer and a second wafer. The sub-stack includes a first thermally-curable adhesive at an interface between the upper surface of the first wafer and the lower surface of the second wafer. A third wafer is placed on the upper surface of the second wafer. A second thermally-curable adhesive is present at an interface between the upper surface of the second wafer and the lower surface of the third wafer. Ultra-violet (UV) radiation is provided in a direction of the upper surface of the third wafer to cure a UV-curable adhesive in openings in the second wafer and in contact with portions of the third wafer so as to bond the third wafer to the sub-stack at discrete locations. Subsequently, the third wafer and the sub-stack are heated so to cure the first and second thermally-curable adhesives.

Abstract: The present disclosure describes intelligent illumination systems that use modulated light. For example, in one aspect, a method includes producing, by a light source, modulated illumination in a visible part of the spectrum, detecting three-dimensional image data based on at least a portion of the modulated light produced by the light source and reflected by a scene, and changing a characteristic of the modulated illumination based on the detected three-dimensional image data.

Abstract: The present disclosure describes image sensor modules that can include auto focus control. The modules also include features that can help reduce or eliminate tilt of the module's optical sub-assembly with respect to the plane of the image sensor. In some instances, the modules include features to facilitate highly precise positioning of the optical sub-assembly, and also can result in modules having a very small z height.

Abstract: The wafer-level manufacturing method makes possible to manufacture ultrathin optical devices such as opto-electronic modules. A clear encapsulation is applied to an initial wafer including active optical components and a wafer-size substrate. Thereon, a photostructurable spectral filter layer is produced which defines apertures. Then, trenches are produced which extend through the clear encapsulation and establish sidewalls of intermediate products. Then, an opaque encapsulation is applied to the intermediate products, thus filling the trenches and producing aperture stops. Cutting through the opaque encapsulation material present in the trenches, singulated optical modules are produced, wherein side walls of the intermediate products are covered by the opaque encapsulation material. The wafer-size substrate can be attached to a rigid carrier wafer during most process steps.

Abstract: Optical stack assemblies and fabrication techniques thereof. The optical stack assembly includes first and second sub-assemblies, each of which include a substrate and a sub-structure fixed to the respective substrate. Each sub-structures includes a respective first edge feature and a respective second edge feature that project away from the substrate of that sub-structure, each second edge feature being disposed laterally closer to an outer periphery of the respective sub-structure than the first edge feature of the same sub-structure. The first edge feature of the first sub-structure is in direct contact with the first edge feature of the second sub¬structure, while the second edge feature of the first sub-structure and the second edge feature of the second sub-structure are attached to one another by adhesive. At least one of the first or second sub-structures includes an optical element on a same side of the sub-structure as the first and second edge features of that sub-structure.

Abstract: An optoelectronic module includes first and second optical channels having respective active optoelectronic components. A transparent encapsulation is over the active optoelectronic components, and opaque encapsulation is on the transparent encapsulation. The opaque encapsulation has a first opening over a first active optoelectronic component and a second opening over a second optoelectronic component. The opaque encapsulation forms a ledge in an area of the second opening, and an optical assembly is disposed on the ledge within the second opening over the second optoelectronic component.

Abstract: A semiconductor device operable to demodulate incident modulated electromagnetic radiation, the semiconductor device comprising: a pinned photodiode structure including a substrate of a first type, an implant layer of a second type disposed within the substrate, first and second auxiliary implant layers of the second type disposed within the substrate and each disposed adjacent to the implant layer of the second type, an implant layer of the first type disposed within the implant layer of the second type and extending into the first and second auxiliary implant layers of the second type, an insulator disposed on a surface of the substrate, and a photo-detection region; first and second transfer gates disposed on a surface of the insulator, the transfer gates being operable to generate a field within the substrate; and first and second floating diffusion implant layers of the second type disposed within the substrate.

Abstract: Optoelectronic modules, such as proximity sensors, two-dimensional and three-dimensional cameras, structured- or encoded-light emitters, and projectors include optical assemblies and active optoelectronic components that are light sensitive or emit light. The optical assemblies are aligned to the active optoelectronic components via alignment spacers and adhesive. The alignment spacers include surfaces operable to limit the lateral migration of adhesive thereby preventing the contamination of the active optoelectronic components with adhesive. In some instances, small optoelectronic module footprints can be maintained without compromising the integrity of the adhesive.

Abstract: Pixel devices and arrays of pixel devices are operable to demodulate modulated light incident on a photo-detection region of the pixel devices. The pixel devices can include floating diffusion implant layers and transfer gates. The floating diffusion implant layers and transfer gates are disposed such that photo-generated charge carriers can be conducted to the floating diffusion implant layers over minimal charge-carrier transport paths.

Abstract: This disclosure describes optoelectronic modules with locking assemblies and methods for manufacturing the same. The locking assemblies, in some instances, can improve mounting steps during manufacturing and can increase the useful lifetime of the optoelectronic modules into which they are incorporated. The locking assemblies can include overmold protrusions, and optical element housing protrusions, as well as locking edges incorporated into overmold housing components.

Abstract: Image sensor modules include primary high-resolution imagers and secondary imagers. For example, an image sensor module may include a semiconductor chip including photosensitive regions defining, respectively, a primary camera and a secondary camera. The image sensor module may include an optical assembly that does not substantially obstruct the field-of-view of the secondary camera. Some modules include multiple secondary cameras that have a field-of-view at least as large as the field-of-view of the primary camera. Various features are described to facilitate acquisition of signals that can be used to calculate depth information.

Abstract: A distance acquisition method comprising: initializing an optical ranging system, the optical ranging system including a plurality of pixels operable to covert incident light to electrical charges; collecting electrical charges with the plurality of exposed pixels over an integration time, each pixel collecting electrical charges with an amplification and a sensitivity; correlating the electrical charges collected in each pixel to an exposure value for each pixel, the exposure value corresponding to being adequately exposed, over-exposed, or under-exposed; identifying each exposure value for each pixel as being either valid or invalid, wherein a valid exposure value corresponds to an adequately exposed pixel and an invalid exposure value corresponds to an over-exposed or under-exposed pixel; totalling the number of valid exposure value pixels; totalling the number invalid exposure value pixels; determining an exposure ratio, the ratio being the number of pixels with valid exposure values divided by the number

Abstract: An illumination module for generating a patterned illumination with minimal ambiguity includes an array of light sources having different respective near-field intensity profiles. The illumination module also includes an optical assembly. The optical assembly and the array of light sources can be operable to substantially replicate the different respective near-field intensity profiles of the light sources in the far-field thereby generating a patterned illumination. The patterned illumination can exhibit reduced ambiguity in some instances.

Abstract: This disclosure describes illumination assemblies operable to generate a patterned illumination that maintain high contrast over a wide temperature range. An implementation of the illumination assembly can include an array of monochromatic light sources positioned on an illumination plane, first and second optical elements, and an exit aperture. A chief ray of each light source within the array of monochromatic light sources can substantially converge at an exit aperture. In such implementations light generated by the array of monochromatic light sources can be used efficiently.

Abstract: This disclosure relates to illumination modules operable to increase the area over which an illumination source, such as a vertical-cavity surface-emitting laser or light-emitting diode, illuminates. Such illumination modules include a substrate having electrical contacts, an illumination source electrically connected to the substrate, a collimation assembly operable to collimate the light generated from the illumination source, a translation assembly operable to translate light over an area, and a mask assembly. In various implementations the illumination source may be rather small in area, thereby reducing the cost of the illumination module. Some implementations of the illumination module can be used for the acquisition of three-dimensional data in some cases, while in other cases some implementations of the illumination module can be used for other applications requiring projected light.

Abstract: An optoelectronic module includes a non-transitory computer-readable medium comprising machine-readable instructions stored thereon, that when executed on a processor, perform operations for calibrating the optoelectronic module and collecting distance data with the optoelectronic module. Methods for calibrating and collecting distance data include using an optoelectronic module with the non-transitory computer-readable medium that includes the aforementioned instructions. In some instances, a first target is highly reflective, and a second target is highly absorbing.

Abstract: Various optoelectronic modules are described and include one or more optoelectronic devices. Each optoelectronic module includes one or more optoelectronic devices. Sidewalls laterally surround each optoelectronic device and can be in direct contact with sides of the optoelectronic device or, in some cases, with an overmold surrounding the optoelectronic device. The sidewalls can be composed, for example, of a vacuum injected material that is non-transparent to light emitted by or detectable by the optoelectronic device. The module also includes a passive optical element. Depending on the implementation, the passive optical element can be on a cover for the module, directly on a top surface of the optoelectronic device, or on an overmold surrounding the optoelectronic device. Methods of fabricating such modules are described as well, and can facilitate manufacturing the modules using wafer-level processes.