Abstract: A multistage pipelined algorithmic A/D converter digitally calibrated to avoid errors due to charge injection, offset and capacitor mismatch. To perform this calibration, measurements are made at the converter to determine the degree of capacitor mismatch for each stage to be calibrated. In the embodiment disclosed, only one stage is calibrated. The remaining stages of the converter are employed to develop the digital calibration data for the stage being measured. This calibration data is stored in a memory forming part of the converter. The stored data is thereafter used during each conversion to cancel the errors due to capacitor mismatch.

Abstract: An ESD protective clamp device comprised of a two-terminal diode formed in an isolated chip cell. The lower part of this chip cell region contains a buried layer of silicon with P-type dopant, and the upper part is an epitaxial layer also with P-type dopant. An annular (ring-shaped) anode plug segment is formed at the outer reaches of the epitaxial layer with P+ doping. At the interior central region is an N-type plug circular in horizontal cross-section and concentric with the annular plug. This central plug serves as the cathode. Electrical connections are made to anode and cathode to provide interconnection with an IC circuit with a MOM capacitor to be protected.

Abstract: A digital-to-analog converter including a plurality of binarily-weighted stages each incorporating a differential switch-pair circuit which includes two matched bipolar switch transistors the bases of which are driven by a corresponding pair of complementary signal sources. Two additional switches are included in this circuit, with each such switch being connected between a respective signal source and its corresponding transistor control electrode. These two switches are both opened before the clock-controlled activation of the complementary signal sources. A short time after such activation, sufficient to assure that the complementary signal voltages have stabilized at their new values, the two additional switches are reclosed simultaneously by a single control signal so as to effect synchronized switchover of the two switch transistors at that instant.

Abstract: An integrated-circuit (IC) chip formed with a fault-protected switch comprising three MOS transistors in series. An additional MOS transistor is formed adjacent the center one of the three transistors, and is arranged such that the gates of the two transistors are connected together, the source electrodes of the two transistors are connected together, the backgates form a common region, and the drain of the additional transistor is connected to those backgates.

Abstract: A diode-connected transistor device for IC protection against electrostatic discharge (ESD) that functions as a transistor in the active region during an ESD event. The device cell includes an annular collector at the outer reaches of the cell, a circular base diffusion concentric with the collector, and an annular emitter near the outer edge of the base. The base and emitter regions are connected together by metallization external to the transistor cell. With the base contact enclosed by the annular emitter, during an ESD spike the initial reverse bias current flow is from the collector, under the emitter diffusion and out of the base contact. Eventually, as the magnitude of the ESD spike increases, the reverse biased current becomes sufficient to locally forward bias the base-emitter junction changing the primary ESD current path from collector to base, to collector to emitter, thus lowering the ESD current density in the active base-collector junction.

Abstract: An MOS transistor wherein the channel between the source and drain is formed with two regions having different dopant concentrations. The region adjacent the source has a normal concentration, while that adjacent the drain has a reduced dopant concentration. This reduces the degrading effects of hot carrier injection, thereby extending the life of the transistor.

Abstract: A scrambler for use with thermometer-code digital signals and having a number of interconnected identical switching cells in the form of swapper cells with two inputs and two outputs. A control signal determines whether the inputs are connected directly or reversely to the outputs. The control signal is developed by logic circuitry which receives as inputs the two swapper cell input bits and a state bit representing the integrated difference of past swapper output signals.

Abstract: An integrated-circuit (IC) chip formed with a fault-protected switch comprising three MOS transistors in series. Each transistor is placed in a corresponding tub of the IC chip. Each of these tubs is electrically isolated from all other sections of the IC chip, so that the MOS transistors are isolated from one another and from the chip voltage supplies.

Abstract: An analog-to-digital converter (ADC) having three cascaded A/D stages of the "flash" type. In the first stage, the analog signal is compared with a set of threshold reference voltages so as to develop a set of most-significant bits and to produce two analog residue signals: (1) a normal residue corresponding to the difference between the analog input and the reference voltage next below the analog input, and (2) a second residue corresponding to the difference between the analog input and the reference voltage next above the analog signal level. These two residue signals are amplified and directed to the second A/D stage. The sum of the residue signals equals one LSB of the first A/D stage, so that the two residues supply to the second stage information about the quantization error of the previous stage as well as the quantization step size to be used to define full-scale at the second stage. The second A/D stage develops a set of less-significant bits and two more residue signals for the third A/D stage.

Abstract: Signal-sampling apparatus wherein information signals are directed to a register under the control of first clock pulses and are latched into the register under the control of second clock pulses. A calibrator monitors the timing of the first and second clock pulses to determine if they are so close together that data signals subsequently output from the register will be distorted so as to cause errors in downstream devices. If such condition is found, the calibrator inverts the phase of the second clock pulses to assure proper time spacing to avoid data corruption.

Abstract: A low-leakage-current JFET having electrically isolated top and bottom gates. The structure employs enclosed geometry wherein one source/drain region fully surrounds the other source/drain region. Connection to the top gate is made through a diffusion-barrier to prevent penetration of metallization into the top gate contact region. A non-penetrating contact layer is provided on the upper surface of the top gate so that the material of the contact layer does not enter the top gate region to any significant extent. Both the channel region and the shield layer are formed by ion-implantation.

Abstract: The process of making a registration mark on an integrated-circuit substrate wherein photoimaging first is used to define an optically-recognizable mark on a predetermined position of the substrate, and the substrate then is covered with silicon dioxide. Photoresist then is applied over the substrate and selectively removed except over the mark. Etchant then is applied to remove all silicon dioxide except over the photoresist-covered mark. An epitaxial layer thereafter is grown over the substrate. The silicon dioxide over the mark prevents epitaxial growth in that region, so that the mark remains clear and optically visible for the rest of the IC processing.

Abstract: A current-output CMOS DAC with a compensation circuit to increase output impedance. The circuit includes an auxiliary MOS current source matched to at least one of the DAC bit-current sources. A comparator compares the drain voltage of the main MOS current source (which is connected to an external reference current source I.sub.ref) with the drain voltage of the auxiliary current source. The output of the comparator controls the magnitude and sign of a correction current which is directed to the main current source transistor and thereby alters the bit-current output to reduce the ouput sensitivity to changed conditions.

Abstract: An auto-TC voltage reference wherein an operational amplifier receives at one input the voltage of a Zener diode and at its other input receives a compensation signal from a feedback circuit comprising a transistor and resistor network. When one of the resistors of the network is trimmed to give a nominal output voltage for the reference, the TC of the reference voltage will have been reduced to zero, or nearly so. The circuitry is capable of compensating Zener diodes of either positive or negative TC.

Abstract: An analog-to-digital converter (ADC) having two cascaded A/D stages of the parallel type wherein the analog signal is compared with a set of threshold reference voltages. The first stage develops a set of most-significant bits and produces two analog residue signals: a normal residue corresponding to the difference between the analog input and the threshold voltage below the analog input, and a second residue corresponding to the difference between the analog input and the threshold voltage above the analog signal level. These two residue signals are amplified and directed to the second A/D stage. The sum of the residue signals equals one LSB of the first A/D stage, so that the two residues supply to the second stage information about the quantization error of the previous stage as well as the quantization step size to be used to define full-scale at the second stage.

Abstract: An analog-to-digital converter (ADC) having two cascaded A/D stages of the parallel type wherein the analog signal is compared with a set of threshold reference voltages. The first stage develops a set of most-significant bits and produces two analog residue signals: a normal residue corresponding to the difference between the analog input and the threshold voltage below the analog input, and a second residue corresponding to the difference between the analog input and the threshold voltage above the analog signal level. These two residue signals are amplified and directed to the second A/D stage. The sum of the residue signals equals one LSB of the first A/D stage, so that the two residues supply to the second stage information about the quantization error of the previous stage as well as the quantization step size to be used to define full-scale at the second stage.

Abstract: An integrated-circuit (IC) chip having means to prevent or mitigate damage from electrostatic discharge (ESD) employing a thick dielectric coating of insulative oxide between the surface of the chip substrate and the metallization film used to make contact with regions of the substrate. At least a portion of this layer is formed at temperatures below 700.degree. C. The coating is sufficiently thick everywhere that its breakdown voltage is greater than the breakdown voltage of any junction in the substrate. This assures that the breakdown caused by ESD will always occur in the junction, which is self healing, rather than in the dielectric coating, where the damage could be permanent.

Abstract: A comparator for use in an A/D converter such as an algorithmic type. The circuit includes a push-pull inverter gain stage having two series-connected MOSFETs. The input of this inverter is driven by a signal from a preceding current-comparison stage where an input current is compared to a reference current to set the signal level on an input node of the inverter. The trigger point of the inverter is altered by an additional MOSFET, connected in parallel with one of the inverter MOSFETs, and having its gate controlled by the output of a bias voltage control circuit. This circuit includes a control inverter stage matched to the comparator inverter and driven by a control current-comparison circuit matched to the corresponding comparator current-comparison circuit.

Abstract: A band-gap voltage reference forming part of a CMOS IC chip. A .DELTA.V.sub.BE voltage is developed by stacked pairs of parasitic bipolar transistors, with the transistors of each pair operated at different current densities. MOS buffer transistors are connected at corresponding ends of the stacks where the .DELTA.V.sub.BE voltage is developed. The bipolar transistors are driven by MOS current sources.

Abstract: An integrated-circuit (IC) chip formed with a capacitor comprising a lower layer of polysilicon clad with a thin film of TiSi.sub.2 serving as the lower plate of the capacitor, a layer of dielectric, a thin film of titanium nitride (TiN) on the upper surface of the dielectric to serve as the upper plate of the capacitor, a second layer of polysilicon (doped with phosphorous) over the TiN film, and metallization to make contact with the top plate of the capacitor.