Patents Assigned to Anelva Corporation
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Publication number: 20230349846Abstract: An inspection apparatus for inspecting an inspection target surface arranged on an inspection plane, includes an X-ray generation tube having a target including an X-ray generation portion that generates X-rays by irradiation with an electron beam, and configured to emit X-rays to the inspection plane, and an X-ray detector configured to detect X-rays emitted from a foreign substance existing on the inspection target surface irradiated with the X-rays from the X-ray generation portion and totally reflected by the inspection target surface. The X-ray detector includes a long X-ray receiver.Type: ApplicationFiled: July 11, 2023Publication date: November 2, 2023Applicant: CANON ANELVA CORPORATIONInventor: Takeo TSUKAMOTO
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Patent number: 11784030Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.Type: GrantFiled: September 15, 2022Date of Patent: October 10, 2023Assignee: CANON ANELVA CORPORATIONInventors: Atsushi Takeda, Takayuki Moriwaki, Tadashi Inoue, Masaharu Tanabe, Kazunari Sekiya, Hiroshi Sasamoto, Tatsunori Sato, Nobuaki Tsuchiya
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Patent number: 11756773Abstract: A plasma processing apparatus includes a balun having a first input terminal, a second input terminal, a first output terminal, and a second output terminal, a vacuum container, a first electrode electrically connected to the first output terminal, a second electrode electrically connected to the second output terminal, and a connection unit configured to electrically connect the vacuum container and ground, the connection unit including an inductor.Type: GrantFiled: October 28, 2021Date of Patent: September 12, 2023Assignee: CANON ANELVA CORPORATIONInventors: Kazunari Sekiya, Masaharu Tanabe, Tadashi Inoue, Hiroshi Sasamoto, Tatsunori Sato, Nobuaki Tsuchiya
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Patent number: 11694882Abstract: A substrate processing apparatus that processes a substrate using particles, includes a conveyance mechanism configured to convey the substrate along a conveyance surface, a particle source configured to emit particles, a rotation mechanism configured to make the particle source pivot about a rotation axis, and a movement mechanism configured to move the particle source such that a distance between the particle source and the conveyance surface is changed.Type: GrantFiled: January 21, 2022Date of Patent: July 4, 2023Assignee: CANON ANELVA CORPORATIONInventors: Yuji Takanami, Kento Norota, Naoyuki Okamoto, Yasuo Kato, Yasushi Yasumatsu
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Patent number: 11626270Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, and a second electrode electrically connected to the second balanced terminal. When Rp represents a resistance component between the first balanced terminal and the second balanced terminal when viewing a side of the first electrode and the second electrode from a side of the first balanced terminal and the second balanced terminal, and X represents an inductance between the first unbalanced terminal and the first balanced terminal, 1.5?X/Rp?5000 is satisfied.Type: GrantFiled: December 19, 2019Date of Patent: April 11, 2023Assignee: CANON ANELVA CORPORATIONInventors: Tadashi Inoue, Masaharu Tanabe, Kazunari Sekiya, Hiroshi Sasamoto, Tatsunori Sato, Nobuaki Tsuchiya
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Publication number: 20230083722Abstract: Atomic diffusion bonding is carried out using a bonding film comprising a nitride formed at a bonding surface. Operating in a vacuum chamber, a bonding film comprising a nitride is formed on each of flat surfaces of two substrates that each have the flat surface, and, by overlapping the two substrates so the bonding films formed on the two substrates are in contact with each other, the two substrates are joined by the generation of atomic diffusion at a bonding interface between the bonding films.Type: ApplicationFiled: October 14, 2022Publication date: March 16, 2023Applicants: TOHOKU UNIVERSITY, Canon Anelva CorporationInventors: Takehito SHIMATSU, Miyuki UOMOTO, Kazuo MIYAMOTO, Yoshikazu MIYAMOTO, Nobuhiko KATOH, Takayuki MORIWAKI, Takayuki SAITOH
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Patent number: 11600466Abstract: A plasma processing apparatus includes an impedance matching circuit, a balun having a first unbalanced terminal connected to the impedance matching circuit, a grounded second unbalanced terminal, a first balanced terminal and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, an adjustment reactance configured to affect a relationship between a first voltage applied to the first electrode and a second voltage applied to the second electrode, a high-frequency power supply configured to supply a high frequency between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit, and a controller configured to control an impedance of the impedance matching circuit and a reactance of the adjustment reactance.Type: GrantFiled: September 17, 2020Date of Patent: March 7, 2023Assignee: CANON ANELVA CORPORATIONInventors: Masaharu Tanabe, Kazunari Sekiya, Tadashi Inoue, Hiroshi Sasamoto, Tatsunori Sato, Nobuaki Tsuchiya, Atsushi Takeda
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Patent number: 11600469Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.Type: GrantFiled: December 19, 2019Date of Patent: March 7, 2023Assignee: CANON ANELVA CORPORATIONInventors: Atsushi Takeda, Takayuki Moriwaki, Tadashi Inoue, Masaharu Tanabe, Kazunari Sekiya, Hiroshi Sasamoto, Tatsunori Sato, Nobuaki Tsuchiya
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Patent number: 11600295Abstract: A vacuum process method for a magnetic recording medium having a surface protective layer for protecting a magnetic recording layer formed on a substrate includes a ta-C film forming step of forming a ta-C film on the magnetic recording layer, a transportation step of transporting a substrate on which the ta-C film is formed, a radical generation step of generating radicals by exciting a process gas, and a radical process step of irradiating a surface of the ta-C film with the radicals.Type: GrantFiled: April 18, 2016Date of Patent: March 7, 2023Assignee: CANON ANELVA CORPORATIONInventors: Hiroshi Yakushiji, Masahiro Shibamoto
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Publication number: 20230051810Abstract: Substrates that are bonding targets are bonded in ambient atmosphere via bonding films, including oxides, formed on bonding faces of the substrates. The bonding films, which are metal or semiconductor thin films formed by vacuum film deposition and at least the surfaces of which are oxidized, are formed into the respective smooth faces of two substrates having the smooth faces that serve as the bonding faces. The bonding films are exposed to a space that contains moisture, and the two substrates are overlapped in the ambient atmosphere such that the surfaces of the bonding films are made to be hydrophilic and the surfaces of the bonding films contact one another. Through this, a chemical bond is generated at the bonded interface, and thereby the two substrates are bonded together in the ambient atmosphere. The bonding strength ? can be improved by heating the bonded substrates at a temperature.Type: ApplicationFiled: October 7, 2022Publication date: February 16, 2023Applicants: CANON ANELVA CORPORATION, TOHOKU UNIVERSITYInventors: Takayuki SAITOH, Takayuki MORIWAKI, Takehito SHIMATSU, Miyuki UOMOTO
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Patent number: 11569070Abstract: A plasma processing apparatus includes a balun having a first input terminal, a second input terminal, a first output terminal, and a second output terminal, a vacuum container, a first electrode electrically connected to the first output terminal, a second electrode electrically connected to the second output terminal, and a connection unit configured to electrically connect the vacuum container and ground, the connection unit including an inductor.Type: GrantFiled: December 19, 2019Date of Patent: January 31, 2023Assignee: CANON ANELVA CORPORATIONInventors: Kazunari Sekiya, Masaharu Tanabe, Tadashi Inoue, Hiroshi Sasamoto, Tatsunori Sato, Nobuaki Tsuchiya
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Publication number: 20230005721Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.Type: ApplicationFiled: September 15, 2022Publication date: January 5, 2023Applicant: Canon Anelva CorporationInventors: Atsushi TAKEDA, Takayuki MORIWAKI, Tadashi INOUE, Masaharu TANABE, Kazunari SEKIYA, Hiroshi SASAMOTO, Tatsunori SATO, Nobuaki TSUCHIYA
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Publication number: 20220415912Abstract: A stacked structure includes a ferroelectric layer, and a tunnel barrier layer joined to the ferroelectric layer. The main component of the ferroelectric layer is aluminum nitride, and the main component of the tunnel barrier layer is magnesium oxide.Type: ApplicationFiled: June 28, 2022Publication date: December 29, 2022Applicant: CANON ANELVA CORPORATIONInventor: Koji TSUNEKAWA
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Patent number: 11521822Abstract: An ion gun including an anode, a cathode opposed to the anode and having a first portion and a second portion, and a magnet configured to form a magnetic field space between the first portion and the second portion. An annular gap including a linear portion and a curved portion is provided between the first portion and the second portion of the cathode. The magnet is configured to form, between the first portion and the second portion of the curved portion, a magnetic field line having a bottom inside a cross-sectional centerline of the gap.Type: GrantFiled: May 31, 2022Date of Patent: December 6, 2022Assignee: CANON ANELVA CORPORATIONInventor: Tsutomu Hiroishi
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Patent number: 11508545Abstract: An object of the invention is to provide a grid assembly which is easy to assemble and is high in assembly reproducibility, and an ion beam etching apparatus including it. A grid assembly is constructed of three grids each in the shape of a circular plate, which are stacked one on top of another. The grid assembly includes three fixing holes for fixing the three grids, and three positioning holes for positioning the three grids. In assembly, the three grids are stacked one on top of another on a first ring so that positioning pins provided on the first ring are inserted into the positioning holes. Then, a second ring is stacked on top of the three grids, and bolts are inserted into the fixing holes. Thus, positioning is performed by using the fixed positioning pins and thereafter the fixing can be performed, which facilitates the assembly.Type: GrantFiled: June 17, 2015Date of Patent: November 22, 2022Assignee: CANON ANELVA CORPORATIONInventors: Masashi Tsujiyama, Yasushi Yasumatsu, Kaori Motochi
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Patent number: 11462391Abstract: A plasma processing apparatus includes an impedance matching circuit, a balun having a first unbalanced terminal connected to the impedance matching circuit, a grounded second unbalanced terminal, a first balanced terminal and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, an adjustment reactance configured to affect a relationship between a first voltage applied to the first electrode and a second voltage applied to the second electrode, a high-frequency power supply configured to supply a high frequency between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit, and a controller configured to control an impedance of the impedance matching circuit and a reactance of the adjustment reactance.Type: GrantFiled: September 17, 2020Date of Patent: October 4, 2022Assignee: CANON ANELVA CORPORATIONInventors: Masaharu Tanabe, Kazunari Sekiya, Tadashi Inoue, Hiroshi Sasamoto, Tatsunori Sato, Nobuaki Tsuchiya, Atsushi Takeda
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Patent number: 11462392Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, and a second electrode electrically connected to the second balanced terminal. When Rp represents a resistance component between the first balanced terminal and the second balanced terminal when viewing a side of the first electrode and the second electrode from a side of the first balanced terminal and the second balanced terminal, and X represents an inductance between the first unbalanced terminal and the first balanced terminal, 1.5?X/Rp?5000 is satisfied.Type: GrantFiled: December 19, 2019Date of Patent: October 4, 2022Assignee: CANON ANELVA CORPORATIONInventors: Tadashi Inoue, Masaharu Tanabe, Kazunari Sekiya, Hiroshi Sasamoto, Tatsunori Sato, Nobuaki Tsuchiya
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Patent number: 11450643Abstract: A bonded structure includes a first substrate; a second substrate placed opposite to the first substrate; an intermediate layer provided between the first substrate and the second substrate and including a first oxide thin film layered on the first substrate and a second oxide thin film layered on the second substrate; either or both of the first oxide thin film and the second oxide thin film of the intermediate layer being formed of oxide thin films having increased defects; and an interface between the first oxide thin film and the second oxide thin film=being bonded by chemical bonding, and the interface comprising a low-density portion whose density is lower than that of the two oxide thin films.Type: GrantFiled: February 14, 2022Date of Patent: September 20, 2022Assignees: TOHOKU UNIVERSITY, CANON ANELVA CORPORATIONInventors: Takehito Shimatsu, Miyuki Uomoto, Kazuo Miyamoto, Yoshikazu Miyamoto, Nobuhiko Katoh, Takayuki Moriwaki, Takayuki Saitoh
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Publication number: 20220199569Abstract: A bonded structure includes a first substrate; a second substrate placed opposite to the first substrate; an intermediate layer provided between the first substrate and the second substrate and including a first oxide thin film layered on the first substrate and a second oxide thin film layered on the second substrate; either or both of the first oxide thin film and the second oxide thin film of the intermediate layer being formed of oxide thin films having increased defects; and an interface between the first oxide thin film and the second oxide thin film=being bonded by chemical bonding, and the interface comprising a low-density portion whose density is lower than that of the two oxide thin films.Type: ApplicationFiled: February 14, 2022Publication date: June 23, 2022Applicants: TOHOKU UNIVERSITY, CANON ANELVA CORPORATIONInventors: Takehito SHIMATSU, Miyuki UOMOTO, Kazuo MIYAMOTO, Yoshikazu MIYAMOTO, Nobuhiko KATOH, Takayuki MORIWAKI, Takayuki SAITOH
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Patent number: 11355314Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.Type: GrantFiled: December 16, 2020Date of Patent: June 7, 2022Assignee: CANON ANELVA CORPORATIONInventors: Yasushi Yasumatsu, Naoyuki Okamoto, Masashi Tsujiyama, Fumihito Suzuki