Abstract: A method for defect classification includes storing definitions of defect classes in terms of a classification rules in a multi-dimensional feature space. Inspection data associated with defects detected in one or more samples under inspection is received. A plurality of first classification results is generated by applying an automatic classifier to the inspection data based on the definitions, the plurality of first classification results comprising a class label and a corresponding confidence level for a defect. Upon determining that a confidence level for a defect is below a predetermined confidence threshold, a plurality of second classification results are generated by applying at least one inspection modality to the defect. A report is generated comprising a distribution of the defects among the defect classes by combining the plurality of first classification results and the plurality of second classification results.

Abstract: There is provided an inspection system for inspecting a specimen, an inspection unit capable to operate in conjunction with an inspection machine unit, a die layout clipping unit, methods of inspecting a specimen, and a method of providing a die layout clip. The method of inspecting a specimen comprises: obtaining location information indicative of coordinates of a potential defect of interest revealed in the specimen and of one or more inspected layers corresponding to the potential defect of interest; sending to a die layout clipping unit a first data indicative of the location information and dimensions of an inspection area containing the potential defect of interest; receiving a die layout clip generated in accordance with the first data; specifying at least one inspection algorithm of the inspection area using information comprised in the die layout clip; and enabling inspection of the inspection area using the specified inspection algorithm.

Abstract: Chamber elements defining an internal chamber to be utilized during a substrate related stage selected from the group consisting of substrate manufacturing stage and substrate inspection stage, the chamber elements comprising: a first element having a first surface; a second element having a second surface about the periphery of the internal chamber; a third element connected to the second element; and a clamping mechanism that is connected to the second and third elements and is arranged to press the second element towards the first element; wherein a first area of the first surface and a second area of the second surface come into proximity with each other at a first interface; wherein the first surface is positioned above the second surface; wherein a gas groove and a vacuum groove are formed in the second area; wherein the second element comprises a gas conduit that is arranged to provide gas to the gas groove and a vacuum conduit that is arranged to provide vacuum to the vacuum groove; wherein a provisio

Abstract: A system for zapping a wafer, the system includes a pulse generator; a sensor; a first conductive interface; a second conductive interface; a controller; wherein the pulse generator is configured to generate zapping pulses; wherein the first conductive interface is configured to provide the zapping pulses to a first location of a backside insulating layer of a wafer; wherein the sensor is configured to monitor a coupling between the first conductive interface and the second conductive interface to provide a monitoring result; wherein the monitoring occurs while the second conductive interface contacts a second location of the backside insulating layer; and wherein the controller is configured to control a generation of the zapping pulses in response to the monitoring result.

Abstract: A scanning system that includes an illumination module that is configured to scan, at a first direction, an elongated radiation spot over an object; and a collection module that is configured to (a) collect a collected radiation beam from the object, and (b) optically manipulate the collected radiation beam to provide a counter-scan beam is directed towards a set of detection units and has a focal point that is positioned at a same location regardless of the propagation of the elongated radiation spot along the first direction.

Abstract: According to an embodiment of the invention there may be provided a system for assigning lithographic mask inspection process parameters. The system may include a search module, a decision module and a memory module. The memory module may be configured to store an expected image expected to be formed on a photoresist during a lithographic process that involves illuminating the lithographic mask. The search module may be configured to search in the expected image for printable features. The decision module may be configured to assign a first lithographic mask inspection process parameter to lithographic mask areas related to printable features and assign a second lithographic mask inspection process parameter to at least some lithographic mask areas that are not associated with printable features. The second lithographic mask inspection process parameter may differ from the first lithographic mask inspection process parameter.

Abstract: A method for inspecting a specimen with an array of primary charged particle beamlets in a charged particle beam device having an optical axis. The method includes generating a primary charged particle beam; illuminating a multi-aperture lens plate with the primary charged particle beam to generate the array of primary charged particle beamlets; and correcting a field curvature of the charged particle beam device with a first and a second field curvature correction electrode. The method further includes applying a voltage to the first and to the second field curvature correction electrode. At least one of the field strength provided by the first and the second field curvature correction electrode varies in a plane perpendicular to the optical axis of the charged particle beam device. The method further includes focusing the primary charged particle beamlets on separate locations on the specimen with an objective lens.

Abstract: A method for determining overlay between layers of a multilayer structure may include obtaining a given image representing the multilayer structure, obtaining expected images for layers of the multilayer structure, providing a combined expected image of the multilayer structure as a combination of the expected images of said layers, performing registration of the given image against the combined expected image, and providing segmentation of the given image, thereby producing a segmented image, and maps of the layers of said multilayered structure. The method may further include determining overlay between any two selected layers of the multilayer structure by processing the maps of the two selected layers together with the expected images of said two selected layers.

Abstract: A high voltage inspection system that includes a vacuum chamber; electron optics that is configured to direct an electron beam towards an upper surface of a substrate; a substrate support module that comprises a chuck and a housing; wherein the chuck is configured to support a substrate; wherein the housing is configured to surround the substrate without masking the electron beam, when the substrate is positioned on the chuck during a first operational mode of the high voltage inspection system; and wherein the substrate, the chuck and the housing are configured to (a) receive a high voltage bias signal of a high voltage level that exceeds ten thousand volts, and (b) to maintain at substantially the high voltage level during the first operational mode of the high voltage inspection system.

Abstract: An inspection system that may include a processor and a memory module; wherein the memory module is configured to store a first image of an area of an object and a second image of the area of the object; wherein the processor is configured to generate a synthetic image of the area of the object, and to compare the synthetic image to the second image to provide defect detection results.

Abstract: A system, computer readable medium and a method for material analysis, the method may include (i) receiving or generating (a) an estimated composition of a microscopic element; wherein the estimated composition is responsive to an energy spectrum of, at least, the microscopic element; wherein the energy spectrum is obtained by an energy dispersive X-ray (EDX) detector; additional information related to, at least, the microscopic element, wherein the additional information is not obtained by the energy dispersive X-ray detector; and (ii) resolving an ambiguity in the estimated composition in response to the additional information, wherein the ambiguity occurs when the energy spectrum comprises a predefined energy peak that is attributed to a predefined material of ambiguous EDX composition determination.

Abstract: A computerized system that may include a recipe module and a yield diagnostics module. The yield diagnostics module may be configured to generate evaluation results that are indicative of an outcome of an evaluation process of at least one manufacturing stage of at least one electrical circuit. The evaluation results differ from end of line (EOL) results. The recipe module may be configured to receive EOL results relating to the at least one electrical circuit, to receive the evaluation results relating to the at least one electrical circuit; to correlate the evaluation results and the EOL results to provide correlation results; and respond to the correlation results. The responding to the correlation results may include determining whether to alter a recipe in response to the correlation results and altering the recipe if it is determined to alter the recipe.

Abstract: A method for scanning an object with a charged particle beam, the method may include repeating, for each pair of scan lines out of multiple pairs of scan lines, the stages of: (i) deflecting the charged particle beam along a first direction, thereby scanning the object along a first scan line of the pair of scan lines; (ii) collecting electrons emitted from the object during the scanning of the object along a majority of the first scan line; (iii) deflecting the charged particle beam along a second direction that is normal to the first direction; (iv) deflecting the charged particle beam along a third direction that is opposite to the first direction, thereby scanning the object along a second scan line of the pair of scan lines; (v) collecting electrons emitted from the object during the scanning of the object along a majority of the second scan line; and (vi) deflecting the charged particle beam along the second direction that is normal to the third direction.

Abstract: A device that may include a DC power supply coupled to a fixed current source; an APD; a DC voltage regulator that comprises a regulating transistor, arranged to maintain a regulated voltage at a fixed value over different APD currents; a temperature control module that is arranged to maintain a portion of the temperature control module at a fixed temperature; and compensation circuit that comprises a compensation component that is thermally coupled to the APD. A voltage drop over the compensation component is smaller than a voltage drop over the APD. A sum of (a) a current that pass through the APD and (b) a current that passes through the compensation component is fixed. The portion of the temperature control module is thermally coupled to the compensation component and to the APD.

Abstract: A method for evaluating a specimen, the method can include positioning an energy dispersive X-ray (EDX) detector at a first position; scanning a flat surface of the specimen by a charged particle beam that exits from a charged particle beam optics tip and propagates through an aperture of an EDX detector tip; detecting, by the EDX detector, x-ray photons emitted from the flat surface as a result of the scanning of the flat surface with the charged particle beam; after a completion of the scanning of the flat surface, positioning the EDX detector at a second position in which a distance between the EDX detector tip and a plane of the flat surface exceeds a distance between the plane of the flat surface and the charged particle beam optics tip; and wherein a projection of the EDX detector on the plane of the flat surface virtually falls on the flat surface when the EDX detector is positioned at the first position and when the EDX detector is positioned at the second position.

Abstract: A method for classification includes receiving an image of an area of a semiconductor wafer on which a pattern has been formed, the area containing an image location of interest, and receiving computer-aided design (CAD) data relating to the pattern comprising a CAD location of interest corresponding to the image location of interest. At least one value for one or more attributes of the image location of interest is computed based on a context of the CAD location of interest with respect to the CAD data.

Abstract: There are provided a method of inspecting the inspection area and an inspection system thereof. The inspection system comprises an inspection control unit operatively coupled to an inspection tool unit and to a recipe generating unit. The inspection control unit is configured to obtain the design data and the inspection recipe; to provide local segmentation of at least one inspection PoI comprised in an inspection image captured from the inspection area by the inspection tool unit, thereby obtaining inspection structural elements comprised in the at least one inspection PoI, the local segmentation is provided using segmentation configuration data specified in the inspection recipe; to identify one or more target structural elements and design structural elements corresponding thereto, identifying is provided using design association data specified in the inspection recipe; and to enable metrology measurements for the one or more target structural elements using the identified design structural elements.

Abstract: A detection module that includes a readout circuit and detector having a group of sensing elements. The group is configured to detect multiple beams. The multiple beams resulted from an illumination of a substrate, by an illumination module, by multiple electron beams. The readout circuit is configured to: (a) receive selection information for selecting multiple selected sub-groups of sensing elements; wherein the group of sensing elements comprises, in addition to the multiple selected sub-groups of sensing elements, a plurality of non-selected sensing elements; (b) ignore detection signals provided from the plurality of non-selected sensing elements, and (c) generate, for each selected sub-group of sensing elements, a sensing result to provide multiple sensing results that correspond to the multiple beams; and wherein the selected sub-groups of sensing elements are selected in response to at least one working condition of the illumination module.

Abstract: An inspection system that may include a first detection module, an illumination and collection module, and a processor. The illumination and collection module and the first detection module may be configured to execute one or more illumination and collection iterations. Each inspection iteration may include: illuminating with illuminating radiation multiple points of an object; (ii) directing first collected radiation from the multiple points of the object through one or more first exit pupil regions towards the first detection module; and (iii) generating first detection signals that may be indicative of the first collected radiation. The processor may be configured to process the first detection signals to provide a first mapping between (i) a characteristic of radiation at the first exit pupil, (ii) the multiple points of the object, and (iii) the multiple first exit pupil regions.

Abstract: A system for scanning a plurality of regions of interest of a substrate using one or more charged particle beams, the system comprises: an irradiation module having charged particle optics; a stage for introducing a relative movement between the substrate and the charged particle optics; an imaging module for collecting electrons emanating from the substrate in response to a scanning of the regions of interest by the one or more charged particle beams; and wherein the charged particle optics is arranged to perform countermovements of the charged particle beam during the scanning of the regions of interest thereby countering relative movements introduced between the substrate and the charged particle optics during the scanning of the regions of interest.